JP6955489B2 - 先進cmp及び凹部流れのための間隙充填膜の修正 - Google Patents
先進cmp及び凹部流れのための間隙充填膜の修正 Download PDFInfo
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- 230000004048 modification Effects 0.000 title 1
- 238000012986 modification Methods 0.000 title 1
- 239000000463 material Substances 0.000 claims description 126
- 238000000034 method Methods 0.000 claims description 77
- 229910052734 helium Inorganic materials 0.000 claims description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 24
- 239000001307 helium Substances 0.000 claims description 23
- 239000010703 silicon Substances 0.000 claims description 23
- 238000000137 annealing Methods 0.000 claims description 15
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 description 38
- -1 helium ion Chemical class 0.000 description 28
- 238000005468 ion implantation Methods 0.000 description 27
- 230000000694 effects Effects 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 238000000926 separation method Methods 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
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- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
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- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
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Description
Claims (13)
- 間隙充填材料を処理するための方法であって、
第1のイオンエネルギーを使用して前記間隙充填材料内に、ヘリウムを含む第1のイオン種を注入すること、
前記間隙充填材料内に前記第1のイオン種を注入した後に、第2のイオンエネルギーを使用して前記間隙充填材料内に、シリコンを含む第2のイオン種を注入することであって、前記第1のイオンエネルギーが前記第2のイオンエネルギーよりも大きい、注入すること、
前記第2のイオン種に晒された後で前記間隙充填材料をアニーリングすること、及び
前記間隙充填材料に化学機械研磨プロセスを実行することであって、前記間隙充填材料のディッシングが8nm未満である、実行することを含む、方法。 - 前記第1のイオン種と前記第2のイオン種が、同じイオン種を含む、請求項1に記載の方法。
- 前記第1のイオン種が、第1の深さで前記間隙充填材料内に注入される、請求項1に記載の方法。
- 前記第2のイオン種が、第2の深さで前記間隙充填材料内に注入され、前記第2の深さが前記第1の深さよりも浅い、請求項3に記載の方法。
- 間隙充填材料を処理するための方法であって、
第1のイオンエネルギーを使用して前記間隙充填材料内にヘリウムイオン種を注入すること、
第2のイオンエネルギーを使用して前記間隙充填材料内にシリコンイオン種を注入することであって、前記第1のイオンエネルギーが前記第2のイオンエネルギーよりも大きい、注入すること、
前記シリコンイオン種に晒された後で前記間隙充填材料をアニーリングすること、及び
アニーリングされた前記間隙充填材料に化学機械研磨プロセスを実行することを含む、方法。 - 前記間隙充填材料をアニーリングすることが、蒸気アニーリングを含む、請求項5に記載の方法。
- 前記ヘリウムイオン種が、摂氏450度よりも高い温度で注入される、請求項5に記載の方法。
- 前記ヘリウムイオン種の注入が、平方センチメートル当たり1×1015から約5×1017原子の用量を有する、請求項5に記載の方法。
- 前記シリコンイオン種の注入が、平方センチメートル当たり1×1015から約5×1017原子の用量を有する、請求項5に記載の方法。
- 間隙充填材料を生成するための方法であって、
基板上に間隙充填材料を堆積させること、
前記間隙充填材料を処理することであって、
第1のイオンエネルギーを使用して前記間隙充填材料内にヘリウムイオン種を注入することと、
第2のイオンエネルギーを使用して前記間隙充填材料内にシリコンイオン種を注入することであって、前記第1のイオンエネルギーが前記第2のイオンエネルギーよりも大きい、注入することとを含む、処理すること、
前記シリコンイオン種に晒された後で前記間隙充填材料をアニーリングして、アニーリングされた間隙充填材料を生成すること、及び
前記アニーリングされた間隙充填材料に化学機械研磨プロセスを実行することを含む、方法。 - 前記ヘリウムイオン種が、第1の深さで前記間隙充填材料内に注入される、請求項10に記載の方法。
- 前記シリコンイオン種が、第2の深さで前記間隙充填材料内に注入され、前記第2の深さが前記第1の深さよりも浅い、請求項11に記載の方法。
- 前記ヘリウムイオン種が、摂氏450度よりも高い温度で注入される、請求項10に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562245577P | 2015-10-23 | 2015-10-23 | |
US62/245,577 | 2015-10-23 | ||
PCT/US2016/054453 WO2017069923A1 (en) | 2015-10-23 | 2016-09-29 | Gapfill film modification for advanced cmp and recess flow |
Publications (3)
Publication Number | Publication Date |
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JP2018531518A JP2018531518A (ja) | 2018-10-25 |
JP2018531518A6 JP2018531518A6 (ja) | 2018-12-13 |
JP6955489B2 true JP6955489B2 (ja) | 2021-10-27 |
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JP2018520451A Active JP6955489B2 (ja) | 2015-10-23 | 2016-09-29 | 先進cmp及び凹部流れのための間隙充填膜の修正 |
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US (1) | US10096512B2 (ja) |
JP (1) | JP6955489B2 (ja) |
KR (1) | KR20180061389A (ja) |
CN (1) | CN108352357B (ja) |
TW (1) | TWI706463B (ja) |
WO (1) | WO2017069923A1 (ja) |
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US10366900B2 (en) * | 2016-03-25 | 2019-07-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
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CN105870019A (zh) * | 2015-01-22 | 2016-08-17 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法和电子装置 |
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CN108352357B (zh) | 2023-02-17 |
US10096512B2 (en) | 2018-10-09 |
WO2017069923A1 (en) | 2017-04-27 |
TW201727742A (zh) | 2017-08-01 |
KR20180061389A (ko) | 2018-06-07 |
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CN108352357A (zh) | 2018-07-31 |
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