JP5486781B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP5486781B2 JP5486781B2 JP2008181282A JP2008181282A JP5486781B2 JP 5486781 B2 JP5486781 B2 JP 5486781B2 JP 2008181282 A JP2008181282 A JP 2008181282A JP 2008181282 A JP2008181282 A JP 2008181282A JP 5486781 B2 JP5486781 B2 JP 5486781B2
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- semiconductor film
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- 239000004065 semiconductor Substances 0.000 title claims description 218
- 238000000034 method Methods 0.000 title claims description 37
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000012535 impurity Substances 0.000 claims description 85
- 239000000758 substrate Substances 0.000 claims description 85
- 238000010438 heat treatment Methods 0.000 claims description 11
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 238000003776 cleavage reaction Methods 0.000 claims description 3
- -1 hydrogen ions Chemical class 0.000 claims description 3
- 230000007017 scission Effects 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims 2
- 239000010408 film Substances 0.000 description 165
- 239000010410 layer Substances 0.000 description 41
- 230000015572 biosynthetic process Effects 0.000 description 35
- 239000013078 crystal Substances 0.000 description 26
- 229910052710 silicon Inorganic materials 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 239000011229 interlayer Substances 0.000 description 15
- 239000004973 liquid crystal related substance Substances 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 125000004429 atom Chemical group 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- 230000006870 function Effects 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 239000011521 glass Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 238000000926 separation method Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- 125000006850 spacer group Chemical group 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 239000002585 base Substances 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 102100040844 Dual specificity protein kinase CLK2 Human genes 0.000 description 2
- 101000749291 Homo sapiens Dual specificity protein kinase CLK2 Proteins 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 102100040862 Dual specificity protein kinase CLK1 Human genes 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 101000749294 Homo sapiens Dual specificity protein kinase CLK1 Proteins 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- MXSJNBRAMXILSE-UHFFFAOYSA-N [Si].[P].[B] Chemical compound [Si].[P].[B] MXSJNBRAMXILSE-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
Description
本実施の形態1では、本発明に係る半導体装置の作製方法を図1および図2を用いて説明する。
本実施の形態2では、実施の形態1で示したような本発明を用いて形成される半導体装置の一例として、マイクロプロセッサについて図6を用いて説明する。
本実施の形態3では、実施の形態1で示したような本発明を用いて形成される半導体装置の一例として、非接触でデータの送受信を行うことのできる演算機能を備えた半導体装置について説明する。
本実施の形態4では、実施の形態1で示したような本発明を用いた半導体装置が形成される基板として、表示パネルを製造するマザーガラスと呼ばれる大型のガラス基板を用いる場合について説明する。
(実施の形態5)
本実施の形態では、本発明を用いて構成される様々な電子機器について、図11を用いて説明する。電子機器としては、テレビジョン装置(単にテレビ、又はテレビジョン受信機ともよぶ)、ビデオカメラ、デジタルカメラ、ゴーグル型ディスプレイ(ヘッドマウントディスプレイ)、ナビゲーションシステム、音響再生装置(カーオーディオ、オーディオコンポ等)、ノート型パーソナルコンピュータ、ゲーム機器、携帯情報端末(モバイルコンピュータ、携帯電話、携帯型ゲーム機または電子書籍等)、記録媒体を備えた画像再生装置(具体的にはデジタルビデオディスク(DVD)等の記録媒体を再生し、その画像を表示しうる表示装置を備えた装置)などが挙げられる。その好ましい形態について、図11を参照して説明する。
102 絶縁膜
103 半導体膜
104 レジスト
105 p型不純物
106 半導体膜
107 レジスト
108 n型不純物
109 半導体膜
201 半導体基板
202 イオン
203 剥離層
204 半導体膜
205 積層半導体膜
207 ゲート絶縁膜
208 ゲート電極
210 レジスト
211 n型不純物
212 不純物領域
213 レジスト
214 p型不純物
215 不純物領域
216 サイドウオール絶縁層
217 レジスト
218 n型不純物
219 不純物領域
220 レジスト
221 p型不純物
222 不純物領域
223 保護膜
224 層間絶縁膜
225 コンタクトホール
226 コンタクトプラグ
227 配線
228 層間絶縁膜
229 パッシベーション膜
230 パッシベーション膜
231 配線間絶縁膜
232 バリアメタル
233 銅配線
234 パッシベーション膜
600 マイクロプロセッサ
601 演算回路
602 演算回路制御部
603 命令解析部
604 制御部
605 タイミング制御部
606 レジスタ
607 レジスタ制御部
608 バスインターフェース
609 専用メモリ
610 メモリインターフェース
711 RFCPU
712 アナログ回路部
713 デジタル回路部
714 共振回路
715 整流回路
716 定電圧回路
717 リセット回路
718 発振回路
719 復調回路
720 変調回路
721 RFインターフェース
722 制御レジスタ
723 クロックコントローラ
724 CPUインターフェース
725 中央処理ユニット
726 ランダムアクセスメモリ
727 専用メモリ
728 アンテナ
729 容量部
730 電源管理回路
801 基板
802 表示パネル
803 半導体膜
804 半導体膜
805 走査線駆動回路領域
806 信号線駆動回路領域
807 画素形成領域
808 絶縁膜
809 半導体膜
810 走査線
812 信号線
813 画素電極
814 ゲート絶縁膜
815 ゲート電極
816 画素トランジスタ
817 層間絶縁膜
818 電極
819 柱状スペーサ
820 配向膜
821 対向基板
822 対向電極
823 配向膜
824 液晶層
1001 選択用トランジスタ
1002 電流供給線
1003 表示制御用トランジスタ
1004 隔壁層
1005 EL層
1006 対向電極
1007 封止樹脂
1008 対向基板
1009 電極
1010 電極
109a 半導体膜
109b 半導体膜
8001 筐体
8002 支持台
8003 表示部
8004 スピーカー部
8005 ビデオ入力端子
8101 本体
8102 筐体
8103 表示部
8104 キーボード
8105 外部接続ポート
8106 マウス
8201 本体
8202 表示部
8203 筐体
8204 外部接続ポート
8205 リモコン受信部
8206 受像部
8207 バッテリー
8208 音声入力部
8209 操作キー
8210 接眼部
8301 本体
8302 表示部
8303 筐体
8304 操作スイッチ
8401 本体
8402 筐体
8403 表示部
8404 音声入力部
8405 音声出力部
8406 操作キー
8407 外部接続ポート
8408 アンテナ
8501 本体
8502 表示部
8503 筐体
8504 操作スイッチ
8505 イヤホン
Claims (4)
- 基板上方に、絶縁膜を形成する工程と、
前記絶縁膜上方に、第1の半導体膜を形成する工程と、
前記第1の半導体膜の第1の領域に、一導電型を付与する第1の不純物を注入する工程と、
前記第1の半導体膜の第2の領域に、前記第1の不純物とは逆の導電型を付与する第2の不純物を注入する工程と、
前記第1の半導体膜と、剥離層を有する半導体基板と、を接合させる工程と、
前記剥離層を劈開面として前記半導体基板を剥離し、前記第1の半導体膜上方に第2の半導体膜を形成する工程と、
前記第1の半導体膜及び前記第2の半導体膜をエッチングして、前記第1の領域を有する前記第1の半導体膜と、前記第2の半導体膜と、を有する第1の積層半導体膜と、前記第2の領域を有する前記第1の半導体膜と、前記第2の半導体膜と、を有する第2の積層半導体膜と、を形成する工程と、
前記第1の積層半導体膜及び前記第2の積層半導体膜上方に、ゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜上方に、前記第1の積層半導体膜と重なる領域を有する第1のゲート電極と、前記第2の積層半導体層と重なる領域を有する第2のゲート電極と、を形成する工程と、
前記第1のゲート電極をマスクとして、前記第1の積層半導体膜に、前記第1の不純物とは逆の導電型を付与する第3の不純物を注入する工程と、
前記第2のゲート電極をマスクとして、前記第2の積層半導体膜に、前記第2の不純物とは逆の導電型を付与する第4の不純物を注入する工程と、を有し、
前記第1の領域における前記第1の不純物の濃度は、5×10 15 atoms/cm 3 以上5×10 17 atoms/cm 3 以下であり、
前記第2の領域における前記第2の不純物の濃度は、5×10 15 atoms/cm 3 以上5×10 16 atoms/cm 3 以下であることを特徴とする半導体装置の作製方法。 - 基板上方に、第1の半導体膜を形成する工程と、
前記第1の半導体膜の第1の領域に、一導電型を付与する第1の不純物を注入する工程と、
前記第1の半導体膜の第2の領域に、前記第1の不純物とは逆の導電型を付与する第2の不純物を注入する工程と、
前記第1の半導体膜と、剥離層を有する半導体基板と、を接合させる工程と、
前記剥離層を劈開面として前記半導体基板を剥離し、前記第1の半導体膜上方に第2の半導体膜を形成する工程と、
前記第1の半導体膜及び前記第2の半導体膜をエッチングして、前記第1の領域を有する前記第1の半導体膜と、前記第2の半導体膜と、を有する第1の積層半導体膜と、前記第2の領域を有する前記第1の半導体膜と、前記第2の半導体膜と、を有する第2の積層半導体膜と、を形成する工程と、
前記第1の積層半導体膜及び前記第2の積層半導体膜上方に、ゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜上方に、前記第1の積層半導体膜と重なる領域を有する第1のゲート電極と、前記第2の積層半導体層と重なる領域を有する第2のゲート電極と、を形成する工程と、
前記第1のゲート電極をマスクとして、前記第1の積層半導体膜に、前記第1の不純物とは逆の導電型を付与する第3の不純物を注入する工程と、
前記第2のゲート電極をマスクとして、前記第2の積層半導体膜に、前記第2の不純物とは逆の導電型を付与する第4の不純物を注入する工程と、を有することを特徴とする半導体装置の作製方法。 - 請求項1又は2において、
前記剥離層は、前記半導体基板に水素イオンを注入することにより形成することを特徴とする半導体装置の作製方法。 - 請求項1乃至3のいずれか一項において、
前記接合の後、加熱処理又は加圧処理を行うことを特徴とする半導体装置の作製方法。
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US7772054B2 (en) * | 2007-06-15 | 2010-08-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JP5459900B2 (ja) * | 2007-12-25 | 2014-04-02 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP5503895B2 (ja) * | 2008-04-25 | 2014-05-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
WO2017069923A1 (en) * | 2015-10-23 | 2017-04-27 | Applied Materials, Inc. | Gapfill film modification for advanced cmp and recess flow |
FR3045934B1 (fr) * | 2015-12-22 | 2018-02-16 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de fabrication d’un empilement de dispositifs electroniques |
CN106783624A (zh) * | 2016-12-31 | 2017-05-31 | 杭州潮盛科技有限公司 | 晶体管阈值电压调节方法及反相器制备方法 |
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FR2681472B1 (fr) * | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
TW222345B (en) * | 1992-02-25 | 1994-04-11 | Semicondustor Energy Res Co Ltd | Semiconductor and its manufacturing method |
JP3200961B2 (ja) | 1992-05-15 | 2001-08-20 | ソニー株式会社 | 半導体装置の製造方法 |
JPH0750417A (ja) * | 1993-08-06 | 1995-02-21 | Canon Inc | 半導体装置 |
JPH07142738A (ja) | 1993-11-19 | 1995-06-02 | Fujitsu Ltd | 半導体装置の製造方法 |
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US6251754B1 (en) * | 1997-05-09 | 2001-06-26 | Denso Corporation | Semiconductor substrate manufacturing method |
US6388652B1 (en) * | 1997-08-20 | 2002-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Electrooptical device |
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JPH11163347A (ja) * | 1997-12-02 | 1999-06-18 | Seiko Epson Corp | 半導体装置とその製造方法 |
JP2000012864A (ja) * | 1998-06-22 | 2000-01-14 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
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JP4476390B2 (ja) * | 1998-09-04 | 2010-06-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2002198529A (ja) * | 2000-10-18 | 2002-07-12 | Hitachi Ltd | 半導体装置およびその製造方法 |
US6908797B2 (en) * | 2002-07-09 | 2005-06-21 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
JP2006324485A (ja) * | 2005-05-19 | 2006-11-30 | Renesas Technology Corp | 半導体集積回路並びにその設計方法および製造方法 |
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