JP6892065B2 - 表示パネル - Google Patents
表示パネル Download PDFInfo
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- JP6892065B2 JP6892065B2 JP2016001458A JP2016001458A JP6892065B2 JP 6892065 B2 JP6892065 B2 JP 6892065B2 JP 2016001458 A JP2016001458 A JP 2016001458A JP 2016001458 A JP2016001458 A JP 2016001458A JP 6892065 B2 JP6892065 B2 JP 6892065B2
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- 239000000758 substrate Substances 0.000 claims description 33
- 230000008859 change Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
- Geometry (AREA)
- Thin Film Transistor (AREA)
Description
101 第1の基板
102 第2の基板
1301 第1の接触領域
1302 第2の接触領域
1303 中間領域
1303−L1 中間領域の第1側
1303−L2 中間領域の第2側
1304 第1の非チャネル領域
1305 第2の非チャネル領域
1306 第3の非チャネル領域
1307 突出部
1308 第1のチャネル領域
1309 第2のチャネル領域
1311 第1の領域
1312 第2の領域
110 第1の透明導電層
113 第1の透明導電層のスリット
115、117、119 ビアホール
117−1、119−1 底部エッジ
117−2、119−2 上部エッジ
120 第2の透明導電層
122 第2の透明導電層のスリット
125 第2の透明導電層の開口
126 第1の絶縁層
128 第2の絶縁層
130 活性層
132 第3の絶縁層
134 第4の絶縁層
136 表示媒体層
140 走査線
150 データ線
152 ドレイン電極
W1 第1のチャネル領域の幅
W2 第2のチャネル領域の幅
W3 第3の非チャネル領域の幅
W4 第1の領域の幅
W5 第2の領域の幅
W6 第1の非チャネル領域の幅
W7 第2の非チャネル領域の幅
W8 第1の接触領域の幅
W9 第2の接触領域の幅
Claims (11)
- 第1の基板と、
互いに交差して交差領域を形成し、前記第1の基板の上に配置された走査線およびデータ線であって、前記走査線は第1の方向に沿って延伸する、
前記走査線および前記データ線と、
前記第1の基板上、且つ前記データ線と前記第1の基板との間に配置された活性層と、
を含み、
前記活性層は、
第1のビアホールを介して前記データ線と電気的に接続された第1の接触領域と、
前記走査線の一部と重なっている第1のチャネル領域と、
前記走査線の、前記一部とは別の部分と重なっている第2のチャネル領域と、
前記走査線と重なっておらず、且つ前記第1のチャネル領域と前記第2のチャネル領域との間を接続する非チャネル領域と、
を含み、
前記非チャネル領域の輪郭の少なくとも一部が円弧形状を有し、
第2のビアホールを介して前記活性層に電気的に接続されたドレイン電極であって、前記ドレイン電極と前記活性層とが異なる層である前記ドレイン電極と、
第3のビアホールを介して前記ドレイン電極に電気的に接続された第1の導電層と、
を備え、
前記第1の基板上の前記第2のビアホールの投影が、前記第1の基板上の前記第3のビアホールの投影と、少なくとも部分的に重なっており、
前記非チャネル領域が、前記走査線に平行な方向で、前記第1のチャネル領域または前記第2のチャネル領域から外向きに突出する少なくとも1つの突出部を有する、
表示パネル。 - 前記第1のビアホールの前記第1の方向に沿った幅は、前記交差領域における前記データ線の前記第1の方向に沿った幅より大きい、請求項1に記載の表示パネル。
- 前記データ線の輪郭の少なくとも一部が円弧形状を有する、請求項1に記載の表示パネル。
- 前記第1のビアホールに対応している前記データ線の輪郭が円弧形状を有する、請求項1に記載の表示パネル。
- 前記活性層は、前記第1の導電層と電気的に接続された第2の接触領域を更に含む、請求項1に記載の表示パネル。
- 前記第1の導電層が電極である、請求項5に記載の表示パネル。
- 前記第1の導電層がパターン化された電極である、請求項5に記載の表示パネル。
- 前記第1の基板上の前記第2のビアホールの投影の一部と、前記第1の基板上の前記第3のビアホールの投影の一部とが重なっていない、請求項5に記載の表示パネル。
- 前記第1の基板の上に配置された第2の導電層を更に含む、請求項5に記載の表示パネル。
- 前記第1の導電層は、前記第2の導電層から絶縁される、請求項9に記載の表示パネル。
- 前記第1の基板に対向して配置された第2の基板と、
前記第1の基板と前記第2の基板との間に配置された表示媒体と、を更に含む、請求項1に記載の表示パネル。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW104100493A TWI567950B (zh) | 2015-01-08 | 2015-01-08 | 顯示面板 |
TW104100493 | 2015-01-08 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2016126353A JP2016126353A (ja) | 2016-07-11 |
JP2016126353A5 JP2016126353A5 (ja) | 2019-02-14 |
JP6892065B2 true JP6892065B2 (ja) | 2021-06-18 |
Family
ID=56359512
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016001458A Active JP6892065B2 (ja) | 2015-01-08 | 2016-01-07 | 表示パネル |
Country Status (4)
Country | Link |
---|---|
US (6) | US9897879B2 (ja) |
JP (1) | JP6892065B2 (ja) |
KR (1) | KR102502309B1 (ja) |
TW (1) | TWI567950B (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102326555B1 (ko) * | 2015-04-29 | 2021-11-17 | 삼성디스플레이 주식회사 | 표시장치 |
CN105487316A (zh) * | 2016-01-19 | 2016-04-13 | 深圳市华星光电技术有限公司 | 液晶显示面板及液晶显示装置 |
CN105487735A (zh) * | 2016-01-19 | 2016-04-13 | 深圳市华星光电技术有限公司 | 触摸面板以及其制造方法 |
CN105629545A (zh) * | 2016-01-19 | 2016-06-01 | 深圳市华星光电技术有限公司 | 触摸面板以及其制造方法 |
CN106373966B (zh) * | 2016-09-27 | 2020-03-13 | 上海中航光电子有限公司 | 阵列基板、显示面板及显示装置 |
CN111128080B (zh) * | 2020-03-30 | 2020-08-04 | 京东方科技集团股份有限公司 | 显示基板及显示装置 |
CN116665540B (zh) * | 2023-05-08 | 2024-02-09 | 东莞市伟创动力科技有限公司 | 用于柔性屏伸展收缩的精密配合装置及精密度控制方法 |
Family Cites Families (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5756935A (en) * | 1980-09-22 | 1982-04-05 | Nec Corp | Semiconductor device |
CN100477247C (zh) * | 1994-06-02 | 2009-04-08 | 株式会社半导体能源研究所 | 有源矩阵显示器和电光元件 |
JPH10228035A (ja) * | 1996-12-10 | 1998-08-25 | Fujitsu Ltd | 液晶表示装置及びその製造方法 |
JPH11330481A (ja) * | 1998-05-19 | 1999-11-30 | Sanyo Electric Co Ltd | 薄膜トランジスタ及び液晶表示装置 |
TW460731B (en) * | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
US6888586B2 (en) * | 2001-06-05 | 2005-05-03 | Lg. Philips Lcd Co., Ltd. | Array substrate for liquid crystal display and method for fabricating the same |
KR100442489B1 (ko) * | 2001-06-11 | 2004-07-30 | 엘지.필립스 엘시디 주식회사 | 액정표시소자 |
TW594653B (en) * | 2003-06-02 | 2004-06-21 | Toppoly Optoelectronics Corp | Low leakage thin film transistor circuit |
EP1505666B1 (en) * | 2003-08-05 | 2018-04-04 | LG Display Co., Ltd. | Top-emission active matrix organic electroluminescent display device and method for fabricating the same |
JP4593094B2 (ja) * | 2003-08-21 | 2010-12-08 | 日本電気株式会社 | 液晶表示装置及びその製造方法 |
JP2005084416A (ja) * | 2003-09-09 | 2005-03-31 | Sharp Corp | アクティブマトリクス基板およびそれを用いた表示装置 |
KR100557235B1 (ko) * | 2003-12-30 | 2006-03-07 | 엘지.필립스 엘시디 주식회사 | 유기전계 발광소자와 그 제조방법 |
JP5147196B2 (ja) * | 2005-06-01 | 2013-02-20 | 株式会社半導体エネルギー研究所 | 素子基板 |
TWI603307B (zh) * | 2006-04-05 | 2017-10-21 | 半導體能源研究所股份有限公司 | 半導體裝置,顯示裝置,和電子裝置 |
WO2008010333A1 (fr) * | 2006-07-21 | 2008-01-24 | Sharp Kabushiki Kaisha | Dispositif d'affichage |
JP4449953B2 (ja) * | 2006-07-27 | 2010-04-14 | エプソンイメージングデバイス株式会社 | 液晶表示装置 |
JP4952166B2 (ja) * | 2006-09-22 | 2012-06-13 | ソニー株式会社 | 液晶装置 |
JP2009036947A (ja) * | 2007-08-01 | 2009-02-19 | Seiko Epson Corp | 液晶装置の製造方法、および液晶装置 |
JP2009122250A (ja) * | 2007-11-13 | 2009-06-04 | Seiko Epson Corp | 電気光学装置及び電子機器 |
TWI396911B (zh) * | 2008-01-08 | 2013-05-21 | Au Optronics Corp | 畫素結構 |
JP5258345B2 (ja) * | 2008-03-27 | 2013-08-07 | 株式会社ジャパンディスプレイウェスト | 液晶表示装置 |
KR101479995B1 (ko) * | 2008-04-16 | 2015-01-08 | 삼성디스플레이 주식회사 | 표시 장치 |
US8144295B2 (en) * | 2008-11-18 | 2012-03-27 | Apple Inc. | Common bus design for a TFT-LCD display |
WO2011013523A1 (en) * | 2009-07-31 | 2011-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP5006378B2 (ja) * | 2009-08-11 | 2012-08-22 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置及びその製造方法 |
KR20110037220A (ko) * | 2009-10-06 | 2011-04-13 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를 구비하는 유기전계발광 표시 장치 |
KR101082174B1 (ko) * | 2009-11-27 | 2011-11-09 | 삼성모바일디스플레이주식회사 | 유기전계발광 표시 장치 및 그의 제조 방법 |
JP5600255B2 (ja) * | 2010-01-12 | 2014-10-01 | 株式会社ジャパンディスプレイ | 表示装置、スイッチング回路および電界効果トランジスタ |
US8704230B2 (en) * | 2010-08-26 | 2014-04-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
TWI487120B (zh) * | 2011-08-16 | 2015-06-01 | 群創光電股份有限公司 | 薄膜電晶體基板與其所組成之顯示裝置 |
JP5855888B2 (ja) | 2011-09-30 | 2016-02-09 | 株式会社ジャパンディスプレイ | 液晶表示装置 |
TW201320325A (zh) * | 2011-11-09 | 2013-05-16 | Chimei Innolux Corp | 顯示裝置及其製造方法 |
US8987047B2 (en) * | 2012-04-02 | 2015-03-24 | Samsung Display Co., Ltd. | Thin film transistor, thin film transistor array panel including the same, and method of manufacturing the same |
JP5867924B2 (ja) * | 2012-06-18 | 2016-02-24 | 国立大学法人広島大学 | 蛍光体およびその製造方法 |
US9726954B2 (en) * | 2012-06-25 | 2017-08-08 | Sharp Kabushiki Kaisha | Active matrix substrate with thin film transistor and aperture portions, liquid crystal display device, and method for manufacturing active matrix substrate |
TWI611566B (zh) * | 2013-02-25 | 2018-01-11 | 半導體能源研究所股份有限公司 | 顯示裝置和電子裝置 |
JP6028642B2 (ja) * | 2013-03-22 | 2016-11-16 | 凸版印刷株式会社 | 薄膜トランジスタアレイ |
KR102090578B1 (ko) * | 2013-05-06 | 2020-03-19 | 삼성디스플레이 주식회사 | 전자 장치의 기판, 이를 포함하는 전자 장치 및 접속부의 저항 측정 방법 |
KR102084615B1 (ko) * | 2013-06-14 | 2020-03-05 | 삼성디스플레이 주식회사 | 표시 패널 및 이의 제조 방법 |
KR102091664B1 (ko) * | 2013-09-27 | 2020-03-23 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 제조방법 |
KR20150043073A (ko) * | 2013-10-14 | 2015-04-22 | 삼성디스플레이 주식회사 | 표시 기판 및 표시 기판의 제조 방법 |
KR102092844B1 (ko) * | 2013-10-25 | 2020-04-14 | 엘지디스플레이 주식회사 | 액정 디스플레이 장치와 이의 제조 방법 |
CN204029809U (zh) * | 2014-08-22 | 2014-12-17 | 群创光电股份有限公司 | 显示面板的阵列基板 |
KR101679252B1 (ko) * | 2014-09-30 | 2016-12-07 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판과 그 제조방법 및 그를 이용한 디스플레이 장치 |
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- 2015-08-19 US US14/830,036 patent/US9897879B2/en active Active
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- 2016-01-07 JP JP2016001458A patent/JP6892065B2/ja active Active
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US20200241374A1 (en) | 2020-07-30 |
KR20160085705A (ko) | 2016-07-18 |
US20230324753A1 (en) | 2023-10-12 |
US20210278737A1 (en) | 2021-09-09 |
KR102502309B1 (ko) | 2023-02-21 |
US11372299B2 (en) | 2022-06-28 |
JP2016126353A (ja) | 2016-07-11 |
TWI567950B (zh) | 2017-01-21 |
US9897879B2 (en) | 2018-02-20 |
US20160202584A1 (en) | 2016-07-14 |
US20220291561A1 (en) | 2022-09-15 |
TW201626552A (zh) | 2016-07-16 |
US20180136529A1 (en) | 2018-05-17 |
US11714324B2 (en) | 2023-08-01 |
US11048131B2 (en) | 2021-06-29 |
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