JP6817072B2 - 光電子デバイス - Google Patents
光電子デバイス Download PDFInfo
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- JP6817072B2 JP6817072B2 JP2016568438A JP2016568438A JP6817072B2 JP 6817072 B2 JP6817072 B2 JP 6817072B2 JP 2016568438 A JP2016568438 A JP 2016568438A JP 2016568438 A JP2016568438 A JP 2016568438A JP 6817072 B2 JP6817072 B2 JP 6817072B2
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- 230000005693 optoelectronics Effects 0.000 title claims description 152
- 239000010410 layer Substances 0.000 claims description 379
- 239000013078 crystal Substances 0.000 claims description 138
- 229910002601 GaN Inorganic materials 0.000 claims description 135
- 239000004065 semiconductor Substances 0.000 claims description 115
- 229910052751 metal Inorganic materials 0.000 claims description 101
- 239000002184 metal Substances 0.000 claims description 101
- 239000000463 material Substances 0.000 claims description 97
- 239000000758 substrate Substances 0.000 claims description 51
- 239000000203 mixture Substances 0.000 claims description 48
- 230000003287 optical effect Effects 0.000 claims description 39
- 150000004767 nitrides Chemical class 0.000 claims description 36
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 34
- 229910045601 alloy Inorganic materials 0.000 claims description 32
- 239000000956 alloy Substances 0.000 claims description 32
- 239000012535 impurity Substances 0.000 claims description 27
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 25
- 241000894007 species Species 0.000 claims description 20
- 229910052757 nitrogen Inorganic materials 0.000 claims description 19
- 230000006798 recombination Effects 0.000 claims description 19
- 238000005215 recombination Methods 0.000 claims description 19
- 239000011777 magnesium Substances 0.000 claims description 17
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- 239000002356 single layer Substances 0.000 claims description 14
- 230000010287 polarization Effects 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 230000004913 activation Effects 0.000 claims description 8
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 7
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 7
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 6
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 6
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 6
- 229910052731 fluorine Inorganic materials 0.000 claims description 6
- 239000011737 fluorine Substances 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 230000009977 dual effect Effects 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 3
- PGTXKIZLOWULDJ-UHFFFAOYSA-N [Mg].[Zn] Chemical compound [Mg].[Zn] PGTXKIZLOWULDJ-UHFFFAOYSA-N 0.000 claims description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 150000001768 cations Chemical class 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- BIXHRBFZLLFBFL-UHFFFAOYSA-N germanium nitride Chemical compound N#[Ge]N([Ge]#N)[Ge]#N BIXHRBFZLLFBFL-UHFFFAOYSA-N 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 230000007246 mechanism Effects 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 claims description 2
- 241000854350 Enicospilus group Species 0.000 claims 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 118
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 115
- 230000005428 wave function Effects 0.000 description 83
- 230000007704 transition Effects 0.000 description 43
- 230000005684 electric field Effects 0.000 description 36
- 238000000295 emission spectrum Methods 0.000 description 21
- 238000000034 method Methods 0.000 description 15
- 230000005855 radiation Effects 0.000 description 14
- 239000002019 doping agent Substances 0.000 description 13
- 230000005641 tunneling Effects 0.000 description 13
- 125000004429 atom Chemical group 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 11
- 238000001228 spectrum Methods 0.000 description 11
- 239000010408 film Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000002161 passivation Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 238000005090 crystal field Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 6
- 230000000737 periodic effect Effects 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 239000005445 natural material Substances 0.000 description 3
- 239000006225 natural substrate Substances 0.000 description 3
- 229910052762 osmium Inorganic materials 0.000 description 3
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 3
- 238000013139 quantization Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 230000002269 spontaneous effect Effects 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000005381 potential energy Methods 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 241000255969 Pieris brassicae Species 0.000 description 1
- 230000005699 Stark effect Effects 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- -1 aluminum (Al) Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 238000000975 co-precipitation Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 239000004047 hole gas Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000005610 quantum mechanics Effects 0.000 description 1
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0045—Devices characterised by their operation the devices being superluminescent diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
- H01L33/105—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
本願は、その全体が参照により本明細書中に組み入れられる、2014年5月27日に出願され、「An Optoelectronic Device」と題された豪州仮特許出願第2014902007号の優先権を主張する。
p型活性領域と、
n型活性領域と、を含み、
半導体構造は、専ら一つ以上の超格子からなり、
各超格子は、複数個の単位格子からなり、かつ
各単位格子は、少なくとも二つの異なる実質的な単結晶層を備える。
適切には、半導体構造は、n型活性領域とp型活性領域との間にi型活性領域を含む。
好ましくは、i型活性領域は、1nm〜約10μmの範囲から選択された横方向幅を有する。
適切には、光電子デバイスによって放射される光は、150nm〜280nmの波長範囲の紫外線光である。
適切には、キャビティは、デバイスによって放射された光の波長以下である、反射体間の光路長によって画定される。
適切には、半導体構造の少なくとも一つの領域は、光エネルギーに対して実質的に透過である。
適切には、半導体構造によって生成された光エネルギーは、基板を通り抜けて光電子デバイスから外へ導かれる。
適切には、透過領域が、緩衝層及び基板に隣接して提供され、緩衝層は、デバイスから放射された光エネルギーを透過させる。
適切には、各超格子における各単位格子の少なくとも二つの異なる実質的な単結晶層の各々は、以下の組成の少なくとも一つを備える。
三元組成物単結晶半導体材料(AuB1−uNy)、ここでは、0≦u≦1及び0<y≦1、
四元組成物単結晶半導体材料(ApBqC1−p−qNy)、ここでは、0≦p≦1、0≦q≦1及び0<y≦1、
ここでは、A、B及びCは、II族及び/またはIII族元素から選択された異なる金属原子であり、Nは、窒素、酸素、ヒ素、リン、アンチモン及びフッ素の少なくとも一つから選択された陽イオンである。
III族金属ヒ化物材料(MxAsy)、
III族金属リン化物材料(MxPy)、
III族金属アンチモン化物材料(MxSby)、
II族金属酸化物材料(MxOy)、
II族金属フッ化物材料(MxFy)、
ここでは、0<x≦3及び0<y≦4であり、Mは、金属である。
窒化アルミニウムガリウム(AlxGa1−xN)、ここでは、0≦x<1、
窒化アルミニウムインジウム(AlxIn1−xN)、ここでは、0≦x<1、
窒化アルミニウムガリウムインジウム(AlxGayIn1−x−yN)、ここでは、0≦x<1、0≦y≦1及び0<(x+y)<1。
シリコン(Si)、
ゲルマニウム(Ge)、
シリコン−ゲルマニウム(SixGe1−x)、ここでは、0<x<1、
結晶性シリコン−窒化物(SixNy)、ここでは、0<x<3及び0<y<4、
結晶性ゲルマニウム−窒化物(GexNy)、ここでは、0<x<3及び0<y<4、
結晶性シリコン−アルミニウム−ガリウム−窒化物(Siu[AlxGa1−y]zNv)、
ここでは、u>0、x>0、0<y<1、z>0及びv>0、または
結晶性ゲルマニウム−アルミニウム−ガリウム−窒化物(Geu[AlxGa1−y]zNv)、ここでは、u>0、x>0、0<y<1、z>0及びv>0。
マグネシウム(Mg)、
亜鉛(Zn)、
マグネシウム−亜鉛(MgxZn1−x)、ここでは、0≦x≦1、
結晶性マグネシウム−窒化物(MgxNy)、ここでは、0<x≦3及び0<y≦2、または
マグネシウム−アルミニウム−ガリウム−窒化物(Mgu[AlxGa1−y]zNv)、ここでは、u>0、x>0、0<y<1、z>0及びv>0。
酸素(O)、
炭素(C)、または
フッ素(F)。
適切には、一つ以上の超格子の少なくとも一つの少なくとも一部分は、意図的にドープした領域の活性化エネルギーを強めて電子または正孔キャリア濃度を改善するための一軸性歪みまたは二軸性歪みを含む。
本発明のさらなる特徴及び利点は、以下の詳細な説明から明らかとなる。
本発明は、好ましくは、結晶、より好ましくは、単結晶原子構造として形成された半導体構造を利用する。好ましい実施形態において、紫外線及び深紫外線光の放射のために、半導体構造は、イオン結合から構成されたウルツ鉱結晶構造を有し、III族金属窒化物(III−N)半導体またはII族金属酸化物(II−VI)半導体などの一つ以上の半導体から形成される。
Claims (30)
- 半導体構造を備えた光電子デバイスであって、
p型超格子を含むp型活性領域と、
n型超格子を含むn型活性領域と、
前記n型活性領域と前記p型活性領域との間にi型超格子を含むi型活性領域とを含み、
前記半導体構造が、専ら一つ以上の超格子からなり、
前記p型超格子が、複数個のp型単位格子からなり、
前記n型超格子が、複数個のn型単位格子からなり、
前記i型超格子が、複数個のi型単位格子からなり、
前記複数個のp型単位格子、n型単位格子およびi型単位格子の平均合金含有量が、成長方向に沿って一定であり、
前記p型単位格子は、少なくとも二つの異なる実質的な単結晶層の第1の組を含み、
前記n型単位格子は、少なくとも二つの異なる実質的な単結晶層の第2の組を含み、
前記i型単位格子は、少なくとも二つの異なる実質的な単結晶層の第3の組を含み、
前記少なくとも二つの異なる実質的な単結晶層の第3の組の周期は、前記少なくとも二つの異なる実質的な単結晶層の第1の組の周期より厚く、
前記少なくとも二つの異なる実質的な単結晶層の第3の組の周期は、前記少なくとも二つの異なる実質的な単結晶層の第2の組の周期より厚く、かつ
前記少なくとも二つの異なる実質的な単結晶層の第1、第2および第3の組に含まれるすべての異なる実質的な単結晶層は、弾性歪みを維持するのに必要な臨界層厚さ以下である厚さを有する、前記光電子デバイス。 - 前記i型活性領域が、1nm以上かつ100nm以下の厚さを有する、請求項1に記載の光電子デバイス。
- 前記半導体構造が、成長方向に沿うエピタキシャル層成長によって構成された、請求項1に記載の光電子デバイス。
- 前記少なくとも二つの層の前記第1、第2および第3の組の各々が、それぞれの前記層が前記成長方向に沿って構成された、材料の6個の単分子層以下の厚さを有する、請求項3に記載の光電子デバイス。
- 前記少なくとも二つの異なる実質的な単結晶層の第1、第2および第3の組の各々の前記異なる実質的な単結晶層のうちの一つ以上が、前記成長方向に沿って原子の1〜10個の単分子層を備えた、請求項3に記載の光電子デバイス。
- 前記少なくとも二つの異なる実質的な単結晶層の第1、第2および第3の組の各々の前記少なくとも二つの異なる実質的な単結晶層が、ウルツ鉱結晶対称性と、金属極性または窒素極性のいずれかである前記成長方向における結晶極性と、を有する、請求項3に記載の光電子デバイス。
- 前記結晶極性が、前記成長方向に沿って空間的に変化し、前記結晶極性が、前記窒素極性と前記金属極性との間で交互に反転される、請求項6に記載の光電子デバイス。
- 当該光電子デバイスが、光放射デバイスとして構成され、光が、前記p型活性領域及び前記n型活性領域によって供給された電気的に活性な正孔と電子との再結合によって生成され、前記再結合は、前記i型活性領域において起こる、請求項3に記載の光電子デバイス。
- 当該光電子デバイスによって放射される光が、150nm〜280nmの波長範囲の紫外線光である、請求項8に記載の光電子デバイス。
- 前記光電子デバイスが、前記成長方向に対して実質的に横断する電気光学偏光を有する光を放射し、
前記光電子デバイスが、前記半導体構造の前記成長方向に実質的に平行な方向に沿って光を空間的に生成し、閉じ込める、垂直に発光するキャビティデバイスとして動作する、請求項8に記載の光電子デバイス。 - 前記垂直に発光するキャビティデバイスが、実質的に前記成長方向に沿って配置され、前記半導体構造の一つ以上の部分に沿って空間的に配置された金属反射体を使用して形成された垂直キャビティを有し、
前記反射体が、高光反射率金属から作られ、
前記垂直キャビティが、前記デバイスによって放射された前記光の波長以下である、前記反射体間の光路長によって画定され、かつ
前記波長が、前記半導体構造を備えた前記一つ以上の超格子の光放射エネルギー、及び前記垂直キャビティによって決定される光学キャビティモードによって決定される、請求項10に記載の光電子デバイス。 - 前記高光反射率金属が、アルミニウム(Al)である、請求項11に記載の光電子デバイス。
- 反射層が、前記半導体構造内で生成された前記光の外部での連結を改善するために提供され、かつ
前記反射層が、前記デバイスの内部からの放射された光を実質的に逆反射するように、前記光電子デバイスの上に位置付けられた、請求項8に記載の光電子デバイス。 - 前記半導体構造がそこで成長する結晶基板をさらに備えており、緩衝層が前記基板上で最初に成長し、その後、前記緩衝層をもつ前記半導体構造が、面内格子定数を提供する歪み制御機構として作用する、請求項1に記載の光電子デバイス。
- 前記緩衝層が、一つ以上の緩衝層超格子を含む、請求項14に記載の光電子デバイス。
- 透過領域が、前記緩衝層及び前記基板に隣接して提供され、前記緩衝層が、前記デバイスから放射された光を透過させ、かつ
前記光が、前記透過領域、前記緩衝層及び前記基板を通って外部において連結される、請求項15に記載の光電子デバイス。 - 前記少なくとも二つの異なる実質的な単結晶層の前記第1、第2および第3の組の各々が、以下の組成の少なくとも一つを備える、すなわち、
二元組成物単結晶半導体材料(AxNy)、ここでは、0<x≦1及び0<y≦1、
三元組成物単結晶半導体材料(AuB1−uNy)、ここでは、0≦u≦1及び0<y≦1、
四元組成物単結晶半導体材料(ApBqC1−p−qNy)、ここでは、0≦p≦1、0≦q≦1及び0<y≦1、
ここで、A、B及びCが、II族及び/またはIII族元素から選択された異なる金属原子であり、Nが、窒素、酸素、ヒ素、リン、アンチモン及びフッ素の少なくとも一つから選択された陽イオンである、請求項1に記載の光電子デバイス。 - 前記少なくとも二つの異なる実質的な単結晶層の前記第1、第2および第3の組の各々が、以下の組成の少なくとも一つを備える、すなわち、
III族金属窒化物材料(MxNy)、
III族金属ヒ化物材料(MxAsy)、
III族金属リン化物材料(MxPy)、
III族金属アンチモン化物材料(MxSby)、
II族金属酸化物材料(MxOy)、
II族金属フッ化物材料(MxFy)、
ここで、0<x≦3及び0<y≦4であり、Mが、金属である、請求項1に記載の光電子デバイス。 - 前記少なくとも二つの異なる実質的な単結晶層の前記第1、第2および第3の組の各々が、以下の組成の少なくとも一つを備える、すなわち、
窒化アルミニウム(AlN)、
窒化アルミニウムガリウム(AlxGa1−xN)、ここでは、0≦x<1、
窒化アルミニウムインジウム(AlxIn1−xN)、ここでは、0≦x<1、
窒化アルミニウムガリウムインジウム(AlxGayIn1−x−yN)、ここでは、0≦x<1、0≦y≦1及び0<(x+y)<1、請求項1に記載の光電子デバイス。 - 前記少なくとも二つの異なる実質的な単結晶層の第1、第2および第3の組の一つ以上の組の一つ以上の層を、意図的に不純物種をドープしない、請求項1に記載の光電子デバイス。
- 前記少なくとも二つの異なる実質的な単結晶層の第1、第2および第3の組の一つ以上の組の一つ以上の層を、意図的に、一つ以上の不純物種でドープするまたは一つ以上の不純物種で形成する、請求項1に記載の光電子デバイス。
- 前記n型活性領域における前記一つ以上の不純物種が、
シリコン(Si)、
ゲルマニウム(Ge)、
シリコン−ゲルマニウム(SixGe1−x)、ここでは、0<x<1、
結晶性シリコン−窒化物(SixNy)、ここでは、0<x<3及び0<y<4、
結晶性ゲルマニウム−窒化物(GexNy)、ここでは、0<x<3及び0<y<4、
結晶性シリコン−アルミニウム−ガリウム−窒化物(Siu[AlxGa1−y]zNv)、ここでは、u>0、x>0、0<y<1、z>0及びv>0、または
結晶性ゲルマニウム−アルミニウム−ガリウム−窒化物(Geu[AlxGa1−y]zNv)、ここでは、u>0、x>0、0<y<1、z>0及びv>0、
から選択される、請求項21に記載の光電子デバイス。 - 前記p型活性領域における前記一つ以上の不純物種が、
マグネシウム(Mg)、
亜鉛(Zn)、
マグネシウム−亜鉛(MgxZn1−x)、ここでは、0≦x≦1、
結晶性マグネシウム−窒化物(MgxNy)、ここでは、0<x≦3及び0<y≦2、または
マグネシウム−アルミニウム−ガリウム−窒化物(Mgu[AlxGa1−y]zNv)、ここでは、u>0、x>0、0<y<1、z>0及びv>0、
から選択される、請求項21に記載の光電子デバイス。 - 前記n型活性領域または前記p型活性領域における前記一つ以上の不純物種が、
水素(H)、
酸素(O)、
炭素(C)、または
フッ素(F)、
から選択される、請求項21に記載の光電子デバイス。 - 前記一つ以上の前記p型超格子、前記n型超格子および前記i型超格子の前記少なくとも一つの少なくとも一部分が、意図的にドープした領域の活性化エネルギーを強めて電子または正孔キャリア濃度を改善するための一軸性歪みまたは二軸性歪みを含む、請求項21に記載の光電子デバイス。
- 第一の側部コンタクトが、前記n型活性領域の表面上に形成された第一のコンタクト層から前記n型活性領域内に部分的に延在する、請求項1に記載の光電子デバイス。
- 第二の側部コンタクトが、前記p型活性領域の表面上に形成された第二のコンタクト層から前記p型活性領域内に部分的に延在する、請求項26に記載の光電子デバイス。
- 前記第二の側部コンタクトが、前記第二の側部コンタクトと前記p型活性領域との間のp型GaNの層に囲まれた、請求項27に記載の光電子デバイス。
- 前記第二のコンタクト層が、金属コンタクト層であり、p型コンタクト層が、前記p型活性領域と前記金属コンタクト層との間に形成された、請求項27に記載の光電子デバイス。
- 前記少なくとも二つの異なる実質的な単結晶層の第1、第2および第3の組の各々は、二つの異なる実質的な単結晶層からなる、請求項1に記載の光電子デバイス。
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