JP6796681B2 - 半導体記憶装置 - Google Patents
半導体記憶装置 Download PDFInfo
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- JP6796681B2 JP6796681B2 JP2019090622A JP2019090622A JP6796681B2 JP 6796681 B2 JP6796681 B2 JP 6796681B2 JP 2019090622 A JP2019090622 A JP 2019090622A JP 2019090622 A JP2019090622 A JP 2019090622A JP 6796681 B2 JP6796681 B2 JP 6796681B2
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- circuit
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- semiconductor device
- supply voltage
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- 239000004065 semiconductor Substances 0.000 title claims description 22
- 230000015654 memory Effects 0.000 claims description 22
- 230000004044 response Effects 0.000 claims description 14
- 238000001514 detection method Methods 0.000 claims description 4
- 230000007704 transition Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
- G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
- G11C14/0063—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is an EEPROM element, e.g. a floating gate or MNOS transistor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/26—Power supply means, e.g. regulation thereof
- G06F1/32—Means for saving power
- G06F1/3203—Power management, i.e. event-based initiation of a power-saving mode
- G06F1/3234—Power saving characterised by the action undertaken
- G06F1/3296—Power saving characterised by the action undertaken by lowering the supply or operating voltage
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/148—Details of power up or power down circuits, standby circuits or recovery circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C2029/5004—Voltage
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C2029/5006—Current
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
12:ANDゲート
14:複数のレジスタ
16:判定回路
30:書込み回路
40:制御回路
50:半導体装置
100:フラッシュメモリ
Claims (10)
- 供給電圧と、
データを保持可能な第1の回路とチェック用データを保持可能な第2の回路とを含む揮発性回路と、
前記供給電圧と前記揮発性回路との間に接続され、前記供給電圧からの電圧の供給を制御する電圧供給制御回路と、
前記電圧供給制御回路により電圧の供給が遮断された場合に、前記第2の回路に保持されたチェック用データの正誤を判定する判定回路とを有し、
前記電圧供給制御回路は、前記判定回路の判定結果に応答して前記供給電圧の供給を制御し、
前記第2の回路の動作電圧に関するマージンは、第1の回路よりも悪い、半導体装置。 - 前記供給電圧からの電圧の供給が遮断されたとき、第2の回路は、第1の回路よりも先にデータが破壊される、請求項1に記載の半導体装置。
- 前記供給電圧からの電圧が供給されるノードは、前記供給電圧からの電圧の供給が遮断されたときにフローティングになり、当該ノードの電位が徐々に降下し、第2の回路で保持されたデータが第1の回路よりも先に破壊される、請求項1または2に記載の半導体装置。
- 前記電圧供給制御回路は、パワーダウンモードを表す信号に応答して前記供給電圧からの電圧の供給を遮断し、前記判定回路によりチェック用データの誤りが検出されたことに応答して前記供給電圧からの電圧の供給を再開する、請求項1に記載の半導体装置。
- 半導体装置はさらに、チェック用データの誤りが検出されたとき、前記第2の回路に正しいチェック用データを書込むための書込み回路を含む、請求項1ないし4いずれか1つに記載の半導体装置。
- 前記判定回路は、チェック用データの誤りが検出されたことに応答して一定のパルス幅を有するパルス信号を生成する回路を含み、
前記一定のパルス幅で定めされた期間中、前記電圧供給制御回路は、前記揮発性回路を充電し、かつ前記書込み回路は、正しいチェック用データを第2の回路に書込む、請求項5に記載の半導体装置。 - 前記判定回路は、第2の回路から出力されるチェック用データと期待値とを比較することによりチェック用データの有無を判定する、請求項1に記載の半導体装置。
- 前記書込み回路は、前記期待値を前記判定回路に書込む、請求項7に記載の半導体装置。
- 第1の回路および第2の回路は、複数のレジスタを含み、第1の回路は、パワーアップ動作時に不揮発性メモリからロードされた動作情報を保持する、請求項1に記載の半導体装置。
- 前記電圧供給制御回路は、前記供給電圧と前記揮発性回路との間に接続されたカットオフ用トランジスタと、パワーダウンモードを表す信号および前記判定回路の判定結果を表す信号に基づき前記カットオフ用トランジスタを制御する制御ゲートとを含む、請求項1に記載の半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019090622A JP6796681B2 (ja) | 2019-05-13 | 2019-05-13 | 半導体記憶装置 |
TW108142113A TWI704562B (zh) | 2019-05-13 | 2019-11-20 | 半導體裝置 |
KR1020200054461A KR102345226B1 (ko) | 2019-05-13 | 2020-05-07 | 반도체 장치 |
CN202010384617.3A CN111933209B (zh) | 2019-05-13 | 2020-05-08 | 半导体装置 |
US15/930,046 US10957390B2 (en) | 2019-05-13 | 2020-05-12 | Semiconductor device |
Applications Claiming Priority (1)
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JP2019090622A JP6796681B2 (ja) | 2019-05-13 | 2019-05-13 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
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JP2020187809A JP2020187809A (ja) | 2020-11-19 |
JP6796681B2 true JP6796681B2 (ja) | 2020-12-09 |
Family
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JP2019090622A Active JP6796681B2 (ja) | 2019-05-13 | 2019-05-13 | 半導体記憶装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10957390B2 (ja) |
JP (1) | JP6796681B2 (ja) |
KR (1) | KR102345226B1 (ja) |
CN (1) | CN111933209B (ja) |
TW (1) | TWI704562B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6796681B2 (ja) * | 2019-05-13 | 2020-12-09 | ウィンボンド エレクトロニクス コーポレーション | 半導体記憶装置 |
Family Cites Families (26)
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US6246626B1 (en) * | 2000-07-28 | 2001-06-12 | Micron Technology, Inc. | Protection after brown out in a synchronous memory |
JP4167458B2 (ja) | 2002-07-24 | 2008-10-15 | 松下電器産業株式会社 | 半導体メモリ装置及び半導体集積回路 |
AU2003241803A1 (en) * | 2003-05-27 | 2005-01-21 | Fujitsu Limited | Ferroelectric memory |
JP4237109B2 (ja) * | 2004-06-18 | 2009-03-11 | エルピーダメモリ株式会社 | 半導体記憶装置及びリフレッシュ周期制御方法 |
JP4178248B2 (ja) * | 2004-10-28 | 2008-11-12 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置 |
US7602222B2 (en) * | 2005-09-30 | 2009-10-13 | Mosaid Technologies Incorporated | Power up circuit with low power sleep mode operation |
JP4929668B2 (ja) * | 2005-10-12 | 2012-05-09 | 富士通セミコンダクター株式会社 | 半導体メモリ |
US7382676B2 (en) * | 2006-06-26 | 2008-06-03 | Semiconductor Components Industries, Llc | Method of forming a programmable voltage regulator and structure therefor |
US7342844B2 (en) * | 2006-08-03 | 2008-03-11 | Macronix International Co., Ltd. | Power on sequence for a flash memory device |
KR20100130398A (ko) * | 2009-06-03 | 2010-12-13 | 삼성전자주식회사 | 멀티 포트 메모리에서의 딥 파워 다운 모드 제어 방법 |
JP5514574B2 (ja) * | 2010-02-15 | 2014-06-04 | ローム株式会社 | データ保持装置 |
JP5060574B2 (ja) * | 2010-03-16 | 2012-10-31 | 株式会社東芝 | メモリシステム |
JP5691243B2 (ja) * | 2010-05-25 | 2015-04-01 | 凸版印刷株式会社 | プロセス評価用半導体集積回路 |
JP5581960B2 (ja) * | 2010-10-14 | 2014-09-03 | 凸版印刷株式会社 | 半導体装置 |
CN103000221B (zh) * | 2011-09-09 | 2016-01-20 | 华邦电子股份有限公司 | 半导体装置 |
WO2013095404A1 (en) * | 2011-12-20 | 2013-06-27 | Intel Corporation | Dynamic partial power down of memory-side cache in a 2-level memory hierarchy |
US8995218B2 (en) * | 2012-03-07 | 2015-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9153304B2 (en) | 2012-06-28 | 2015-10-06 | Jaydeep P. Kulkarni | Apparatus for reducing write minimum supply voltage for memory |
KR20140083103A (ko) * | 2012-12-24 | 2014-07-04 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 반도체 메모리 장치의 전압 공급방법 |
US9281022B2 (en) | 2013-07-10 | 2016-03-08 | Zeno Semiconductor, Inc. | Systems and methods for reducing standby power in floating body memory devices |
CN103811073B (zh) * | 2014-02-28 | 2016-06-08 | 北京航空航天大学 | 一种非挥发存储器的高可靠性读取电路 |
JP6181218B2 (ja) * | 2016-02-09 | 2017-08-16 | ウィンボンド エレクトロニクス コーポレーション | 半導体記憶装置 |
JP6829831B2 (ja) * | 2016-12-02 | 2021-02-17 | 国立研究開発法人産業技術総合研究所 | 抵抗変化型メモリ |
JP6494139B1 (ja) | 2018-01-11 | 2019-04-03 | ウィンボンド エレクトロニクス コーポレーション | 半導体記憶装置 |
US10629288B2 (en) * | 2018-06-25 | 2020-04-21 | Micron Technology, Inc. | Adjustable voltage drop detection threshold in a memory device |
JP6796681B2 (ja) * | 2019-05-13 | 2020-12-09 | ウィンボンド エレクトロニクス コーポレーション | 半導体記憶装置 |
-
2019
- 2019-05-13 JP JP2019090622A patent/JP6796681B2/ja active Active
- 2019-11-20 TW TW108142113A patent/TWI704562B/zh active
-
2020
- 2020-05-07 KR KR1020200054461A patent/KR102345226B1/ko active IP Right Grant
- 2020-05-08 CN CN202010384617.3A patent/CN111933209B/zh active Active
- 2020-05-12 US US15/930,046 patent/US10957390B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN111933209B (zh) | 2022-06-03 |
TWI704562B (zh) | 2020-09-11 |
KR102345226B1 (ko) | 2021-12-29 |
US10957390B2 (en) | 2021-03-23 |
CN111933209A (zh) | 2020-11-13 |
TW202042240A (zh) | 2020-11-16 |
US20200365206A1 (en) | 2020-11-19 |
KR20200131749A (ko) | 2020-11-24 |
JP2020187809A (ja) | 2020-11-19 |
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