JP6763175B2 - 誘電体磁器組成物および積層セラミックコンデンサ - Google Patents
誘電体磁器組成物および積層セラミックコンデンサ Download PDFInfo
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- JP6763175B2 JP6763175B2 JP2016068757A JP2016068757A JP6763175B2 JP 6763175 B2 JP6763175 B2 JP 6763175B2 JP 2016068757 A JP2016068757 A JP 2016068757A JP 2016068757 A JP2016068757 A JP 2016068757A JP 6763175 B2 JP6763175 B2 JP 6763175B2
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Description
組成式(Ba1−x−ySrxCay)m(Ti1−ZZrZ)O3で表されるペロブスカイト型化合物(ただし、前記m、x、y、zは全てモル比を示し、0.94≦m≦1.1、0≦x≦1.0、0≦y≦1.0、0≦(x+y)≦1.0、0.1≦z≦0.3をそれぞれ満たす)からなる主成分と、
希土類元素Rの酸化物(ただし、Rは、Sc、Y、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、YbおよびLuから選択される少なくとも1種)からなる第1副成分と、
焼結助剤としての第2副成分とを含み、
前記誘電体磁器組成物は複数の誘電体粒子を含み、前記誘電体粒子は、前記主成分からなる主成分相と、第1副成分が主成分中に拡散した拡散相とを有し、断面における前記主成分相と前記拡散相を合計した面積に対して、拡散相が占める面積の割合が平均で95%以上であり、
前記拡散相におけるTi原子の濃度を100原子%とした場合に、拡散相における希土類元素Rの平均濃度が5原子%以上であり、かつ、拡散相におけるZrの平均濃度が10原子%以上であることを特徴としている。
図1に示すように、セラミック電子部品の非制限的一例としての積層セラミックコンデンサ1は、誘電体層2と、内部電極層3と、が交互に積層された構成のコンデンサ素子本体10を有する。内部電極層3は、各端面がコンデンサ素子本体10の対向する2端部の表面に交互に露出するように積層してある。一対の外部電極4は、コンデンサ素子本体10の両端部に形成され、交互に配置された内部電極層3の露出端面に接続されて、コンデンサ回路を構成する。
誘電体層2は、本実施形態に係る誘電体磁器組成物から構成されている。誘電体磁器組成物は、主成分として、ペロブスカイト型(ABO3型)のチタン酸バリウム系複合酸化物と、後記第1副成分および第2副成分とを含み、必要に応じ他の副成分を含む。
本実施形態では、上記の誘電体層2を構成する誘電体磁器組成物は、複数の誘電体粒子を含む。誘電体粒子の粒子形状、粒径は特に限定はされない。誘電体粒子は、前記主成分からなる相を主成分相とし、第1副成分が主成分中に拡散した相を拡散相とすると、誘電体粒子の断面において、前記主成分相と前記拡散相を合計した面積に対して、拡散相が占める面積の割合が平均で95%以上であり、好ましくは97%以上であり、さらに好ましくは98%以上であり、特に好ましくは99%以上であり、最も好ましくは100%である。したがって、誘電体粒子は、すべてが拡散相で構成された、いわゆる全固溶粒子であることが特に好ましい。
シェル率(%)=100×(1−(L2 2/L1 2))
そして、シェル率(拡散相の面積割合)が95%以上である誘電体粒子を、高固溶型粒子22とし、シェル率が95%未満である誘電体粒子を、コアシェル構造粒子21とする。本実施形態では、誘電体層2は、シェル率が95%以上の高固溶型の誘電体粒子を含む。
平均シェル率(%)=100×(1−(L2ave 2/L1ave 2))
内部電極層3に含有される導電材は特に限定されないが、誘電体層2を構成する材料が耐還元性を有するため、比較的安価な卑金属を用いることができる。導電材として用いる卑金属としては、NiまたはNi合金が好ましい。Ni合金としては、Mn,Cr,CoおよびAlから選択される1種以上の元素とNiとの合金が好ましく、合金中のNi含有量は95質量%以上であることが好ましい。なお、NiまたはNi合金中には、P等の各種微量成分が0.1質量%程度以下含まれていてもよい。内部電極層3の厚さは用途等に応じて適宜決定すればよいが、通常、0.1〜3μm程度であることが好ましい。
外部電極4に含有される導電材は特に限定されないが、本発明では安価なNi,Cuや、これらの合金を用いることができる。外部電極4の厚さは用途等に応じて適宜決定すればよいが、通常、10〜50μm程度であることが好ましい。
本実施形態の積層セラミックコンデンサ1は、従来の積層セラミックコンデンサと同様に、ペーストを用いた通常の印刷法やシート法によりグリーンチップを作製し、これを焼成した後、外部電極を印刷または転写して焼成することにより製造される。以下、製造方法について非制限的具体例を説明する。
誘電体原料として、主成分の原料と、各副成分の原料とを準備する。これらの原料としては、上記した成分の酸化物やその混合物、複合酸化物を用いることができる。また、焼成により上記した酸化物や複合酸化物となる各種化合物、たとえば、炭酸塩、シュウ酸塩、硝酸塩、水酸化物、有機金属化合物等から適宜選択し、混合して用いることもできる。
誘電体原料を調製するために、各成分原料を十分に混合し、混合粉末を得て、これを熱処理(仮焼き)して、仮焼原料を得る。原料の混合は特に限定はされないが、湿式法により20時間程度十分に混合し、その後乾燥する。
次に、誘電体原料を塗料化して、誘電体層用ペーストを調製する。誘電体層用ペーストは、誘電体原料と有機ビヒクルとを混練した有機系の塗料であってもよく、水系の塗料であってもよい。
焼成前に、グリーンチップに脱バインダ処理を施す。脱バインダ条件としては、昇温速度を好ましくは5〜300℃/時間、保持温度を好ましくは180〜900℃、温度保持時間を好ましくは0.5〜24時間とする。また、脱バインダ雰囲気は、空気もしくは還元性雰囲気とする。
このようにして製造された本実施形態の積層セラミックコンデンサは、ハンダ付等によりプリント基板上などに実装され、各種電子機器等に使用される。
主成分原料として、炭酸バリウム(BaCO3)、炭酸カルシウム(CaCO3)、炭酸ストロンチウム(SrCO3)、酸化チタン(TiO2)および酸化ジルコニウム(ZrO2)を、それぞれ準備した。さらに、第1副成分原料として希土類酸化物を、第2副成分の原料としてSiおよびAlの酸化物を、第3副成分原料として酸化マグネシウム(MgO)を、第4副成分の原料としてMnおよびCrの酸化物をそれぞれ準備した。
主成分原料として、炭酸バリウム(BaCO3)、炭酸カルシウム(CaCO3)、炭酸ストロンチウム(SrCO3)、酸化チタン(TiO2)および酸化ジルコニウム(ZrO2)を、それぞれ準備した。焼成後の主成分組成が表1に示す組成となるように、前記主成分を秤量した。秤量後に各原料を混合した。混合は、ボールミルで湿式混合撹拌を20時間行うことで実施した。湿式混合撹拌後の配合物を脱水乾燥した。脱水乾燥後に1000℃で1時間仮焼成し、必要に応じ粉砕し、主成分の仮焼粉末を得た。
仮焼時に、1000℃から1100℃までの昇温速度を、2℃/時間(試料31)、5℃/時間(試料32)、50℃/時間(試料33)、200℃/時間(試料34)とした以外は、試料15と同様にして、仮焼原料(誘電体原料)の粉末を得た。
次いで、得られた誘電体原料:100質量部と、ポリビニルブチラール樹脂:10質量部と、可塑剤としてのジオクチルフタレート(DOP):5質量部と、溶媒としてのアルコール:100質量部とをボールミルで混合してペースト化し、誘電体層用ペーストを得た。
また、上記とは別に、Ni粒子:44.6質量部と、テルピネオール:52質量部と、エチルセルロース:3質量部と、ベンゾトリアゾール:0.4質量部とを、3本ロールにより混練し、ペースト化して内部電極層用ペーストを作製した。
そして、上記にて作製した誘電体層用ペーストを用いて、PETフィルム上に、乾燥後の厚みが15μmとなるようにグリーンシートを形成した。次いで、この上に内部電極層用ペーストを用いて、電極層を所定パターンで印刷した後、PETフィルムからシートを剥離し、電極層を有するグリーンシートを作製した。次いで、電極層を有するグリーンシートを複数枚積層し、加圧接着することによりグリーン積層体とし、このグリーン積層体を所定サイズに切断することにより、グリーンチップを得た。
次いで、得られたグリーンチップについて、脱バインダ処理、焼成およびアニールを下記条件にて行って、素子本体となる焼結体を得た。
誘電体粒子における拡散相の面積割合は、誘電体層断面の顕微鏡写真を画像処理ソフト等により処理して算出する。まず、コンデンサ試料を積層方向 に垂直な面で切断し、その切断面にケミカルエッチングを行う。断面を倍率20000倍で観察し、任意に選択した200個以上の誘電体粒子において、誘電体粒子の面積を算出する。この面積から粒子の円相当径を算出し、平均誘電体粒子径L1aveを求める。また、イオンミリングを行い、電子顕微鏡の反射電子像から、希土類元素Rが存在していない領域(コア)も同様にして平均コア粒子径L2aveを求める。なお、コア部が観察されない場合、コア粒子径はゼロ(0)とする。さらに得られた平均誘電体粒子径L1aveと、平均コア粒子径L2aveとから、誘電体層の面積に占める拡散相(シェル)の面積割合(平均シェル率)を、下記の式により算出する。
平均シェル率(%)=100×(1−(L2ave 2/L1ave 2))
透過型電子顕微鏡(TEM)に付属のエネルギー分散型X線分光装置(EDS)を用いて、拡散相におけるTi、希土類元素RおよびZrについて面分析を行う。この面分析は、150個以上の誘電体粒子について行う。誘電体粒子が30個程度存在する領域(視野)を、5視野以上測定する。そして、分析により得られた特性X線を解析して、Ti、希土類元素RおよびZrの分布を示すマッピング画像を得る。各分析点において、Ti原子の濃度を100原子%とした場合の希土類元素RおよびZrの濃度を算出し、希土類元素Rの平均濃度Ra、およびZrの平均濃度Zaを求め、濃度比Ra/Zaを算出する。
コンデンサ試料に対し、絶縁抵抗計(アドバンテスト社製R8340A)を用いて、20℃において500Vの直流電圧を、コンデンサ試料に10秒間印加し、印加後50秒放置した後の絶縁抵抗IRを測定した。本実施例では、1.0×1012Ω以上を良好(A)とし、2.0×1012Ω以上を優良(S)とし、1.0×1012Ω未満を不良(F)とした。
コンデンサ試料に対し、200℃にて60V/μmの電界下で直流電圧の印加状態を保持し、コンデンサ試料の絶縁劣化時間を測定することにより、高温負荷寿命を評価した。本実施例においては、電圧印加開始から絶縁抵抗が1桁落ちるまでの時間を寿命とし定義した。また、本実施例では、上記の評価を10個のコンデンサ試料について行い、これをワイブル解析することにより算出した平均故障時間(Mean Time To Failure)をその試料の高温負荷寿命と定義した。本実施例では20時間以上を良好(A)とし、40時間以上を優良(S)とし、20時間未満を不良(F)とした。
試料5〜8からは、TiサイトをZrで置換することにより(BaTiO3→BaTi1−ZZrZO3)、バンドギャップが高くなり、抵抗を高くすることができることが分かる。一方、Zrが過剰であると、希土類元素の主成分への固溶を妨げるため高温負荷寿命が低くなる。
試料9〜26および図3〜図6より、拡散相における希土類元素濃度を高くすることで高温負荷寿命が向上し、Zr濃度を高くすることでIR特性が向上する傾向にあることが分かる。希土類元素濃度とIR特性との関係、およびZr濃度と高温負荷寿命との関係では、弱い相関関係は認められるが、希土類元素濃度が高くてもZr濃度が低い場合にはIR特性が不十分になり、Zr濃度が高くても希土類元素濃度が低い場合には高温負荷寿命が不十分になることが分かる。この結果から、希土類元素濃度、Zr濃度をともに高くすることで、高いIR特性と優れた高温負荷寿命とを両立ができることが分かる。
さらに、試料22〜25より、希土類元素濃度RaとZr濃度Zaとの比Ra/Zaを特定範囲とすることで、さらに高いIR特性とさらに優れた高温負荷寿命とを両立ができることが分かる。
試料27〜30から、拡散相の面積割合が小さいと、高温負荷寿命が低くなり、希土類元素の拡散相への固溶率が高い誘電体粒子、好ましくは全固溶粒子を用いることで良好な結果が得られることが分かる。
試料15、31〜34から、仮焼時の保持温度の直前において昇温速度を遅くすることで、拡散相における希土類元素濃度、Zr濃度が高くなり、IR特性、高温負荷寿命がさらに向上することが分かる。
2… 誘電体層
21… コアシェル構造粒子
22… 全固溶粒子
3… 内部電極層
4… 外部電極
10… コンデンサ素子本体
Claims (6)
- 組成式(Ba1−x−ySrxCay)m(Ti1−ZZrZ)O3で表されるペロブスカイト型化合物(ただし、前記m、x、y、zは全てモル比を示し、0.94≦m≦1.1、0≦x≦1.0、0≦y≦1.0、0≦(x+y)≦1.0、0.14≦z≦0.3をそれぞれ満たす)からなる主成分と、
希土類元素Rの酸化物(ただし、Rは、Sc、Y、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、YbおよびLuから選択される少なくとも1種)からなる第1副成分と、
焼結助剤としての第2副成分とを含む誘電体磁器組成物であって、
第1副成分は、RO 3/2 換算で、前記主成分100モルに対し8〜14モル含まれ、
前記誘電体磁器組成物は複数の誘電体粒子を含み、前記誘電体粒子は、前記主成分からなる主成分相と、第1副成分が主成分中に拡散した拡散相とを有し、断面における前記主成分相と前記拡散相を合計した面積に対して、拡散相が占める面積の割合が平均で95.0%以上であり、
前記拡散相におけるTi原子の濃度を100原子%とした場合に、拡散相における希土類元素Rの平均濃度が5原子%以上であり、かつ、拡散相におけるZrの平均濃度が10原子%以上である誘電体磁器組成物。 - 前記拡散相におけるTi原子の濃度を100原子%とした場合に、拡散相における希土類元素Rの平均濃度が8原子%以上である請求項1に記載の誘電体磁器組成物。
- 前記拡散相におけるTi原子の濃度を100原子%とした場合に、拡散相におけるZrの平均濃度が20原子%以上である請求項1または2に記載の誘電体磁器組成物。
- 前記拡散相における希土類元素Rの平均濃度をRaとし、拡散相におけるZrの平均濃度をZaとした場合に、Ra/Zaが、0.2<(Ra/Za)<0.45である請求項1〜3の何れかに記載の誘電体磁器組成物。
- 請求項1〜4の何れかに記載の誘電体磁器組成物を含む電子部品。
- 請求項1〜4の何れかに記載の誘電体磁器組成物を含む誘電体層と、内部電極層とを有する積層セラミックコンデンサ。
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