JP6683619B2 - 半導体装置および製造方法、並びに、電子機器 - Google Patents
半導体装置および製造方法、並びに、電子機器 Download PDFInfo
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- JP6683619B2 JP6683619B2 JP2016553045A JP2016553045A JP6683619B2 JP 6683619 B2 JP6683619 B2 JP 6683619B2 JP 2016553045 A JP2016553045 A JP 2016553045A JP 2016553045 A JP2016553045 A JP 2016553045A JP 6683619 B2 JP6683619 B2 JP 6683619B2
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- 239000004065 semiconductor Substances 0.000 title claims description 57
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 239000000758 substrate Substances 0.000 claims description 178
- 230000002411 adverse Effects 0.000 claims description 24
- 239000010410 layer Substances 0.000 description 102
- 239000002184 metal Substances 0.000 description 73
- 229910052751 metal Inorganic materials 0.000 description 73
- 238000000034 method Methods 0.000 description 24
- 239000010949 copper Substances 0.000 description 15
- 238000005304 joining Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 230000000903 blocking effect Effects 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000003384 imaging method Methods 0.000 description 7
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- 238000005516 engineering process Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 230000007257 malfunction Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- QGOSZQZQVQAYFS-UHFFFAOYSA-N krypton difluoride Chemical compound F[Kr]F QGOSZQZQVQAYFS-UHFFFAOYSA-N 0.000 description 1
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
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Description
(1)
少なくとも2層以上で積層される複数の基板のうちの一方の基板に形成される第1の金属層と、
前記一方の基板に対して積層される他方の基板に形成される第2の金属層と
を備え、
前記第1の金属層と前記第2の金属層とを接合して電位固定することによって、前記一方の基板と前記他方の基板との間で電磁波を遮断する電磁波シールド構造を構成する
積層型デバイス。
(2)
前記第1の金属層は、前記一方の基板を前記他方の基板に接合する接合面に露出するように形成され、
前記第2の金属層は、前記他方の基板を前記一方の基板に接合する接合面に露出するように形成される
上記(1)に記載の積層型デバイス。
(3)
前記第1の金属層および前記第2の金属層は、所定間隔で独立して配置された複数のパッドにより、それぞれ構成される
上記(1)または(2)に記載の積層型デバイス。
(4)
前記第1の金属層および前記第2の金属層それぞれを構成する複数の前記パッドの少なくとも一部は、前記第1の金属層および前記第2の金属層それぞれと同一層に形成される連結配線によって電気的に接続される
上記(3)に記載の積層型デバイス。
(5)
前記第1の金属層を構成する複数の前記パッドと、前記第2の金属層を構成する複数の前記パッドとは、互いに全面または一部で接合される
上記(3)または(4)のいずれかに記載の積層型デバイス。
(6)
前記第1の金属層および前記第2の金属層それぞれを構成する複数の前記パッドの少なくとも一部は、前記第1の金属層および前記第2の金属層とは異なる別層の配線を介して電気的に接続される
上記(3)に記載の積層型デバイス。
(7)
前記第1の金属層および前記第2の金属層は、前記一方の基板と前記他方の基板との間で電気的な接続を行う接合部以外の全面に形成され、
前記第1の金属層と前記接合部との間、および、前記第2の金属層と前記接合部との間にスリットが形成される
上記(1)または(2)に記載の積層型デバイス。
(8)
前記電磁波シールド構造は、前記一方の基板および前記他方の基板の接合面の全面に配置される
上記(1)から(7)までのいずれかに記載の積層型デバイス。
(9)
前記電磁波シールド構造は、前記一方の基板および前記他方の基板の接合面における、前記一方の基板から前記他方の基板の動作に悪影響を与える電磁波を発生する領域、または、前記他方の基板において発生する電磁波により前記一方の基板において悪影響を受ける領域のうち、少なくともいずれか一方の領域に配置される
上記(1)から(7)までのいずれかに記載の積層型デバイス。
(10)
少なくとも2層以上で積層される複数の基板のうちの一方の基板に第1の金属層を形成し、
前記一方の基板に対して積層される他方の基板に第2の金属層を形成し、
前記第1の金属層と前記第2の金属層とを接合して電位固定することによって、前記一方の基板と前記他方の基板との間で電磁波を遮断する電磁波シールド構造を構成する
ステップを含む積層型デバイスの製造方法。
(11)
少なくとも2層以上で積層される複数の基板のうちの一方の基板に形成される第1の金属層と、
前記一方の基板に対して積層される他方の基板に形成される第2の金属層と
を有し、
前記第1の金属層と前記第2の金属層とを接合して電位固定することによって、前記一方の基板と前記他方の基板との間で電磁波を遮断する電磁波シールド構造を構成する
積層型デバイスを備える電子機器。
Claims (8)
- 少なくとも第1の電極と第2の電極と第3の電極とが形成される第1の半導体基板と、
少なくとも第4の電極と第5の電極とが形成される第2の半導体基板と
を備え、
前記第1の電極と前記第2の電極との間隔を塞ぐ位置に前記第4の電極が配置され、
前記第2の電極と前記第3の電極との間隔を塞ぐ位置に前記第5の電極が配置され、
前記第4の電極は前記第1の電極の一部および前記第2の電極の一部それぞれと互いに重なる部分に接合され、
前記第5の電極は前記第2の電極の一部および前記第3の電極の一部それぞれと互いに重なる部分に接合され、
前記第1の電極と前記第2の電極と前記第3の電極と前記第4の電極と前記第5の電極とのうち少なくとも1つを電位固定することによって、前記第1の半導体基板と前記第2の半導体基板との間で電磁波を遮断する電磁波シールド構造を構成する
半導体装置。 - 前記第1の電極と前記第2の電極と前記第3の電極とは、前記第1の半導体基板を前記第2の半導体基板に接合する接合面に露出するように形成され、
前記第4の電極と前記第5の電極とは、前記第2の半導体基板を前記第1の半導体基板に接合する接合面に露出するように形成される
請求項1に記載の半導体装置。 - 前記第1の電極と前記第2の電極と前記第3の電極および前記第4の電極と前記第5の電極の少なくとも一部は、前記第1の電極と前記第2の電極と前記第3の電極および前記第4の電極と前記第5の電極と同一層に形成される連結配線によって電気的に接続される
請求項1に記載の半導体装置。 - 前記第1の電極と前記第2の電極と前記第3の電極および前記第4の電極と前記第5の電極の少なくとも一部は、前記第1の電極と前記第2の電極と前記第3の電極および前記第4の電極と前記第5の電極とは異なる別層の配線を介して電気的に接続される
請求項1に記載の半導体装置。 - 前記電磁波シールド構造は、前記第1の半導体基板および前記第2の半導体基板の接合面の全面に配置される
請求項1に記載の半導体装置。 - 前記電磁波シールド構造は、前記第1の半導体基板および前記第2の半導体基板の接合面における、前記第1の半導体基板から前記第2の半導体基板の動作に悪影響を与える電磁波を発生する領域、または、前記第2の半導体基板において発生する電磁波により前記第1の半導体基板において悪影響を受ける領域のうち、少なくともいずれか一方の領域に配置される
請求項1に記載の半導体装置。 - 少なくとも第1の電極と第2の電極と第3の電極を第1の半導体基板に形成し、
少なくとも第4の電極と第5の電極を第2の半導体基板を形成し、
前記第1の電極と前記第2の電極との間隔を塞ぐ位置に前記第4の電極が配置され、
前記第2の電極と前記第3の電極との間隔を塞ぐ位置に前記第5の電極が配置され、
前記第4の電極は前記第1の電極の一部および前記第2の電極の一部それぞれと互いに重なる部分に接合され、
前記第5の電極は前記第2の電極の一部および前記第3の電極の一部それぞれと互いに重なる部分に接合され、
前記第1の電極と前記第2の電極と前記第3の電極と前記第4の電極と前記第5の電極とのうち少なくとも1つを電位固定することによって、前記第1の半導体基板と前記第2の半導体基板との間で電磁波を遮断する電磁波シールド構造を構成する
ステップを含む半導体装置の製造方法。 - 少なくとも第1の電極と第2の電極と第3の電極とが形成される第1の半導体基板と、
少なくとも第4の電極と第5の電極とが形成される第2の半導体基板と
を有し、
前記第1の電極と前記第2の電極との間隔を塞ぐ位置に前記第4の電極が配置され、
前記第2の電極と前記第3の電極との間隔を塞ぐ位置に前記第5の電極が配置され、
前記第4の電極は前記第1の電極の一部および前記第2の電極の一部それぞれと互いに重なる部分に接合され、
前記第5の電極は前記第2の電極の一部および前記第3の電極の一部それぞれと互いに重なる部分に接合され、
前記第1の電極と前記第2の電極と前記第3の電極と前記第4の電極と前記第5の電極とのうち少なくとも1つを電位固定することによって、前記第1の半導体基板と前記第2の半導体基板との間で電磁波を遮断する電磁波シールド構造を構成する
半導体装置を備える電子機器。
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