JP6661575B2 - 半導体装置およびその製造方法 - Google Patents
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Description
本発明の前提となる技術である前提技術について説明する。
<構成>
図1は、本発明の実施の形態1による半導体装置の構成の一例を示す断面図である。図1に示す半導体装置は、IGBTである。本実施の形態1による半導体装置は、第1n型バッファ層8の構造に特徴を有している。その他の構成は、図21に示す前提技術による半導体装置と同様であるため、ここでは詳細な説明を省略する。
図4〜11は、本実施の形態1による半導体装置であるIGBTの製造工程の一例を示す図である。
図13は、本発明の実施の形態2による半導体装置の構成の一例を示す断面図である。図13に示す半導体装置は、IGBTである。本実施の形態2による半導体装置は、第1n型バッファ層17の構造に特徴を有している。その他の構成および製造方法は、実施の形態1と同様であるため、ここでは詳細な説明を省略する。
図17は、本発明の実施の形態3による半導体装置の構成の一例を示す断面図である。図17に示す半導体装置は、IGBTである。本実施の形態3による半導体装置は、第1n型バッファ層18の構造に特徴を有している。その他の構成および製造方法は、実施の形態1または実施の形態2と同様であるため、ここでは詳細な説明を省略する。
Claims (15)
- 半導体基板と、
前記半導体基板の一方主面内に形成され、前記一方主面からの深さが異なる複数のプロトンの濃度のピークを有する第1バッファ層と、
を備え、
前記第1バッファ層は、前記一方主面から近い方の位置に存在する前記ピークから前記半導体基板の他方主面に向かう前記プロトンの濃度の勾配が、前記一方主面から遠い方の位置に存在する前記ピークから前記他方主面に向かう前記プロトンの濃度の勾配よりも小さく、
前記一方主面は、当該一方主面に対向する前記他方主面よりも前記第1バッファ層の近くに位置し、
前記第1バッファ層は、最も前記一方主面側の領域の前記プロトンの濃度が、前記半導体基板の不純物濃度以下であることを特徴とする、半導体装置。 - 半導体基板と、
前記半導体基板の一方主面内に形成され、前記一方主面からの深さが異なる複数のプロトンの濃度のピークを有する第1バッファ層と、
を備え、
前記第1バッファ層は、前記一方主面から近い方の位置に存在する前記ピークから前記半導体基板の他方主面に向かう前記プロトンの濃度の勾配が、前記一方主面から遠い方の位置に存在する前記ピークから前記他方主面に向かう前記プロトンの濃度の勾配よりも小さく、
前記一方主面は、当該一方主面に対向する前記他方主面よりも前記第1バッファ層の近くに位置し、
前記第1バッファ層の前記一方主面側に形成された第2バッファ層をさらに備え、
前記第2バッファ層の不純物は、リンまたはヒ素であることを特徴とする、半導体装置。 - 半導体基板と、
前記半導体基板の一方主面内に形成され、前記一方主面からの深さが異なる複数のプロトンの濃度のピークを有する第1バッファ層と、
を備え、
前記第1バッファ層は、前記一方主面から近い方の位置に存在する前記ピークの半値幅が、前記一方主面から遠い方の位置に存在する前記ピークの半値幅よりも大きく、
前記一方主面は、当該一方主面に対向する他方主面よりも前記第1バッファ層の近くに位置することを特徴とする、半導体装置。 - 各前記ピークから前記他方主面に向かう前記プロトンの濃度の勾配は、2.0E14cm−3/μm以下であることを特徴とする、請求項1または2に記載の半導体装置。
- 各前記ピークの半値幅は、1.0μm以上であることを特徴とする、請求項3に記載の半導体装置。
- 前記第1バッファ層は、最も前記一方主面側の領域の前記プロトンの濃度が、前記半導体基板の不純物濃度以下であることを特徴とする、請求項2、3、または5のいずれか1項に記載の半導体装置。
- 前記第1バッファ層は、各前記プロトンの濃度のピークが、前記一方主面から前記半導体基板の他方主面に向かって小さくなることを特徴とする、請求項1から6のいずれか1項に記載の半導体装置。
- 前記第1バッファ層は、各前記プロトンの濃度のピークを3つ以上有することを特徴とする、請求項1から7のいずれか1項に記載の半導体装置。
- 前記第1バッファ層は、前記一方主面からの深さが20μm以上であることを特徴とする、請求項1から8のいずれか1項に記載の半導体装置。
- 前記第1バッファ層の前記一方主面側に形成された第2バッファ層をさらに備えることを特徴とする、請求項1、3、または5のいずれか1項に記載の半導体装置。
- 前記第2バッファ層の不純物は、リンまたはヒ素であることを特徴とする、請求項10に記載の半導体装置。
- 前記半導体装置は、絶縁ゲート型バイポーラトランジスタまたはダイオードであることを特徴とする、請求項1から11のいずれか1項に記載の半導体装置。
- 請求項1から12のいずれか1項に記載の半導体装置の製造方法であって、
前記第1バッファ層は、イオン注入機を用いて、1.5MeV以下の異なる加速電圧かつ異なる注入角度で複数回のイオン注入を行うことによって形成されることを特徴とする、半導体装置の製造方法。 - 請求項1から12のいずれか1項に記載の半導体装置の製造方法であって、
前記第1バッファ層は、前記半導体基板の前記一方主面内における前記第1バッファ層を形成すべき領域を遮蔽した遮蔽物を介して、イオン注入機を用いて1.5MeV以下の異なる加速電圧で複数回のイオン注入を行うことによって形成されることを特徴とする、半導体装置の製造方法。 - 請求項2または11に記載の半導体装置の製造方法であって、
前記第1バッファ層は、ファーネスアニールで前記プロトンを活性化させることによって形成され、
前記第2バッファ層は、レーザーアニールで前記リンまたは前記ヒ素を活性化させることによって形成されることを特徴とする、半導体装置の製造方法。
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