JP6656836B2 - 実装構造体及びその製造方法 - Google Patents

実装構造体及びその製造方法 Download PDF

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JP6656836B2
JP6656836B2 JP2015146892A JP2015146892A JP6656836B2 JP 6656836 B2 JP6656836 B2 JP 6656836B2 JP 2015146892 A JP2015146892 A JP 2015146892A JP 2015146892 A JP2015146892 A JP 2015146892A JP 6656836 B2 JP6656836 B2 JP 6656836B2
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metal terminal
substrate
metal
joint
face
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JP2015146892A
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JP2017028156A (ja
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純廣 市川
純廣 市川
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Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
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Priority to JP2015146892A priority Critical patent/JP6656836B2/ja
Priority to US15/196,170 priority patent/US9922960B2/en
Publication of JP2017028156A publication Critical patent/JP2017028156A/ja
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    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
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Description

本発明は、実装構造体及びその製造方法に関する。
銅端子を有する第１の基板と、銅端子を有する第２の基板とを積層し、銅端子同士を直接接合（所謂Ｃｕ−Ｃｕ接合）した実装構造体が知られている。
Ｃｕ−Ｃｕ接合を行う場合には、接合される銅端子の表面を活性化し減圧下で接合する方法（常温接合、SAB：Surface Activated Bonding）、バイト研削等で銅端子の表面を削り減圧下の還元雰囲気中で接合する方法、金属塩生成結合法等が用いられる。
ところで、Ｃｕ−Ｃｕ接合を行う前には、接合される銅端子のアライメントが必要となる。接合前に銅端子同士をアライメントする方法としては、例えば、真空チャンバ内に配置されたアライメント機構を有する装置を用いる方法が知られている。
特開２０１５−００８２２８号公報
しかしながら、上記のアライメント方法では、アライメント機構を有するために装置が高価となることに加え、アライメント機構の腐食が懸念される。
本発明は、上記に鑑みてなされたもので、アライメント機構を有する装置を用いることなく金属端子同士を直接接合することが可能な実装構造体を提供することを課題とする。
本実装構造体は、第１の金属端子、及び前記第１の金属端子よりも高さが低い第２の金属端子、が第１面に形成された第１の基板と、第３の金属端子、及び前記第３の金属端子よりも高さが低い第４の金属端子、が第２面に形成された第２の基板と、を有し、前記第２の基板の前記第２面と前記第１の基板の前記第１面とが対向するように、前記第１の基板上に前記第２の基板を備え、前記第１の金属端子、前記第２の金属端子、前記第３の金属端子、及び前記第４の金属端子は、何れも銅からなり、前記第１の金属端子と前記第３の金属端子とは直接接合されており、前記第２の金属端子と前記第４の金属端子とは、接合部を介して接合されていることを要件とする。
開示の技術によれば、アライメント機構を有する装置を用いることなく金属端子同士を直接接合することが可能な実装構造体を提供できる。
本実施の形態に係る実装構造体を例示する図である。 本実施の形態に係る実装構造体の製造工程を例示する図（その１）である。 本実施の形態に係る実装構造体の製造工程を例示する図（その２）である。
以下、図面を参照して発明を実施するための形態について説明する。なお、各図面において、同一構成部分には同一符号を付し、重複した説明を省略する場合がある。
［本実施の形態に係る実装構造体の構造］
まず、本実施の形態に係る実装構造体の構造について説明する。図１は、本実施の形態に係る実装構造体を例示する図であり、図１（ｂ）は平面図、図１（ａ）は図１（ｂ）のＡ−Ａ線に沿う断面図である。
図１を参照するに、実装構造体１は、第１の基板１０と、第２の基板２０と、接合部３０と、封止部４０とを有する。実装構造体１において、第２の基板２０の他方の面２０ｂ（第２面）が第１の基板１０の一方の面１０ａ（第１面）と対向するように、第２の基板２０が第１の基板１０上に積層されている。
なお、本実施の形態では、便宜上、実装構造体１の第２の基板２０側を上側又は一方の側、第１の基板１０側を下側又は他方の側とする。又、各部位の第２の基板２０側の面を一方の面又は上面、第１の基板１０側の面を他方の面又は下面とする。但し、実装構造体１は天地逆の状態で用いることができ、又は任意の角度で配置することができる。又、平面視とは対象物を第１の基板１０の一方の面１０ａの法線方向から視ることを指し、平面形状とは対象物を第１の基板１０の一方の面１０ａの法線方向から視た形状を指すものとする。
第１の基板１０は、例えば、ガラスクロスにエポキシ系樹脂等の絶縁性樹脂を含浸させた所謂ガラスエポキシ基板等である。第１の基板１０として、ガラス繊維、炭素繊維、アラミド繊維等の織布や不織布にエポキシ系樹脂等の絶縁性樹脂を含浸させた樹脂基板を用いてもよい。又、第１の基板１０として、シリコン基板を用いてもよいし、セラミック基板を用いてもよい。又、第１の基板１０がシリコン基板である場合に、内部に半導体集積回路が形成されていてもよい。第１の基板１０の厚さは、例えば、数１０μｍ〜数ｍｍ程度とすることができる。
第２の基板２０の材料や厚さは、例えば、第１の基板１０と同様とすることができる。但し、第１の基板１０と第２の基板２０とは同種であってもよいし、異種であってもよい。例えば、第１の基板１０及び第２の基板２０が共に樹脂基板であってもよいし、第１の基板１０が樹脂基板であって第２の基板２０がシリコン基板であってもよい。
つまり、実装構造体１は、第１の基板１０及び第２の基板２０の何れもが半導体集積回路を有しない配線基板同士の積層体であってもよい。又、第１の基板１０及び第２の基板２０の一方が半導体集積回路を有する半導体チップ又は半導体ウェハ、他方が半導体集積回路を有しない配線基板との積層体であってもよい。又、第１の基板１０及び第２の基板２０の何れもが半導体集積回路を有する半導体チップと半導体チップ、半導体チップと半導体ウェハ、又は半導体ウェハと半導体ウェハとの積層体であってもよい。又、第１の基板１０及び第２の基板２０の何れか一方が単数で、他方が複数であってもよい。
第１の基板１０の一方の面１０ａには、第１の金属端子１１と、第１の金属端子１１よりも高さが低い第２の金属端子１２とが形成されている。又、第２の基板２０の他方の面２０ｂには、第３の金属端子２１と、第３の金属端子２１よりも高さが低い第４の金属端子２２とが形成されている。
第２の金属端子及び第４の金属端子が第１の金属端子１１及び第３の金属端子２１よりも高さが高い場合、第１の金属端子１１と第３の金属端子の直接接合ができなくなる。一方で、第２の金属端子及び第４の金属端子と第１の金属端子１１及び第３の金属端子２１の高さが同じ場合、金属端子（Ｃｕ）とはんだの界面に形成される合金層により、高さが生じ、第１の金属端子１１と第３の金属端子の直接接合ができなくなる。そのため、合金層により高さが生じても第１の金属端子１１と第３の金属端子の直接接合ができる許容範囲にするために第２の金属端子及び第４の金属端子の高さを低くしておくことが好ましい。
第１の金属端子１１及び第３の金属端子２１は、例えば、第１の基板１０及び第２の基板２０にエリアアレイ状（格子状）に配置され、各第１の金属端子１１と各第３の金属端子２１とは互いに対向している。互いに対向している第１の金属端子１１と第３の金属端子２１とは同種の金属からなり、直接接合されている。第１の金属端子１１と第３の金属端子２１の材料としては、例えば、銅（Ｃｕ）を用いることができる。この場合、第１の金属端子１１と第３の金属端子２１との接合は、所謂Ｃｕ−Ｃｕ接合となる。但し、第１の金属端子１１と第３の金属端子２１の材料は、直接接合が可能な同種の金属であれば、銅（Ｃｕ）以外であってもよい。銅（Ｃｕ）以外の材料としては、例えば、ニッケル（Ｎｉ）、銀（Ａｇ）、インジウム（Ｉｎ）、錫（Ｓｎ）等を挙げることができる。
第２の金属端子１２及び第４の金属端子２２は、例えば、第１の金属端子１１及び第３の金属端子２１が配置される領域よりも外周側の領域に夫々複数個配置され、各第２の金属端子１２と各第４の金属端子２２とは互いに対向している。図１では、第１の基板１０及び第２の基板２０が夫々矩形であり、第１の基板１０及び第２の基板２０の四隅に第２の金属端子１２及び第４の金属端子２２が配置されている。但し、第２の金属端子１２及び第４の金属端子２２は、最低２つずつあればよく、３つや５つ以上あってもよい。
なお、第１の基板１０及び第２の基板２０が矩形である場合、第２の金属端子１２及び第４の金属端子２２の全部又は一部は、矩形の対角線上に配置されていることが好ましい。後述のように、第２の金属端子１２及び第４の金属端子２２はセルフアライメントに用いる端子であり、精度のよいセルフアライメントを実現することができる。
第２の金属端子１２と第４の金属端子２２とは、接合部３０を介して接合されている。接合部３０としては、例えば、低温はんだを用いることができる。なお、本願において、低温はんだとは、融点が２００℃以下のはんだを指すものとする。低温はんだの例としては、ＳｎＢｉ、ＳｎＺｎ、Ｉｎ等を挙げることができる。
第２の金属端子１２及び第４の金属端子２２の材料としては、低温はんだで接合可能な任意の金属を用いることができる。但し、第２の金属端子１２及び第４の金属端子２２を、第１の金属端子１１及び第３の金属端子２１と同種の金属（例えば、Ｃｕ）とすることにより、金属端子の製造工程が簡略化できる点で好適である。
又、第２の金属端子１２及び第４の金属端子２２を第１の金属端子１１及び第３の金属端子２１と異なる金属とした場合、第１の金属端子１１と第３の金属端子２１との接合条件に対して、第２の金属端子１２及び第４の金属端子２２が影響を受けてアライメント精度が低下するおそれがある。しかし、第２の金属端子１２及び第４の金属端子２２を第１の金属端子１１及び第３の金属端子２１と同種の金属とすることにより、第１の金属端子１１と第３の金属端子２１との接合条件に対して、第２の金属端子１２及び第４の金属端子２２も耐えることができるため、アライメント精度の低下を防止することができる。
第１の金属端子１１及び第３の金属端子２１は、例えば円柱状であり、高さは例えば５μｍ〜５００μｍ程度とすることができる。第２の金属端子１２及び第４の金属端子２２は、例えば円柱状であり、高さは例えば第１の金属端子１１及び第３の金属端子２１よりも１μｍ〜１００μｍ程度低くすることができる。
第１の金属端子１１及び第３の金属端子２１が円柱状である場合、円柱の端面の直径は例えば５μｍ〜数１０μｍ程度とすることができる。第２の金属端子１２及び第４の金属端子２２が円柱状である場合、円柱の端面の直径は例えば第１の金属端子１１及び第３の金属端子２１の円柱の端面の直径と同程度か、或いはそれよりも大きくすることができる。第１の金属端子１１及び第３の金属端子２１のピッチは、例えば、２０μｍ〜数１００μｍ程度とすることができる。
封止部４０は、第１の基板１０の一方の面１０ａと第２の基板２０の他方の面２０ｂとの間に、第１の金属端子１１、第２の金属端子１２、第３の金属端子２１、第４の金属端子２２、及び接合部３０を被覆するように形成されている。封止部４０は所謂アンダーフィル樹脂であり、例えば、熱硬化性のエポキシ系樹脂等の絶縁性樹脂から構成することができる。封止部４０は、シリカ（ＳｉＯ２）等のフィラーを含有しても構わない。
［本実施の形態に係る実装構造体の製造方法］
次に、本実施の形態に係る実装構造体の製造方法について説明する。図２及び図３は、本実施の形態に係る実装構造体の製造工程を例示する図である。なお、図２及び図３は、図１（ａ）に対応する断面を示している。
まず、図２（ａ）に示す工程では、樹脂基板やシリコン基板等の第１の基板１０を準備し、第１の基板１０の一方の面１０ａに第１の金属端子１１を形成する。第１の金属端子１１の材料としては、例えば、銅（Ｃｕ）を用いることができる。第１の金属端子１１は、例えば、セミアディティブ法により形成することができる。なお、この工程では、第１の金属端子１１の高さがばらついている場合がある。
次に、図２（ｂ）に示す工程では、研磨又は研削により第１の金属端子１１の先端側を削って高さを揃えると共に、第１の金属端子１１の上端面を平坦化及び活性化する。研磨又は研削としては、例えば、ＣＭＰ（Chemical Mechanical Polishing：化学機械研磨）やバイト研削等を挙げることができる。
次に、図２（ｃ）に示す工程では、第１の基板１０の一方の面１０ａの第１の金属端子１１が配置された領域よりも外周側の領域に、複数個の第２の金属端子１２を形成する。第２の金属端子１２は、例えば、第１の基板１０の一方の面１０ａの四隅や対角線上等に配置することができる。第２の金属端子１２の材料としては、低温はんだで接合可能な任意の金属を用いることができるが、第１の金属端子１１と同種の金属（例えば、Ｃｕ）を用いることが金属端子の製造工程を簡略化できる点で好適である。第２の金属端子１２は、例えば、セミアディティブ法により形成することができる。なお、第２の金属端子１２は、第１の金属端子１１よりも高さが低くなるように形成する。
次に、図２（ｄ）に示す工程では、第２の金属端子１２の上端面に、第１の接合部３０Ａを形成する。第１の接合部３０Ａの材料としては、例えば、ＳｎＢｉ、ＳｎＺｎ、Ｉｎ等の低温はんだを用いることができる。第１の接合部３０Ａは、例えば、セミアディティブ法により形成することができる。ここで、第２の金属端子１２と第１の接合部３０Ａとを合わせた高さが、第１の金属端子１１よりも高くなるように第１の接合部３０Ａを形成することが好ましい。
なお、図２（ｃ）と図２（ｄ）とは連続的な工程とすることができる。すなわち、セミアディティブ法により第２の金属端子１２を形成する際には、第１の基板１０の一方の面１０ａ上に形成したシード層上に、第２の金属端子１２を形成する部分が開口したレジストを設ける。この際、第２の金属端子１２を形成後もレジストを除去することなく、開口内の第２の金属端子１２の上端面に電解めっき法により第１の接合部３０Ａを形成する。その後、レジスト及びシード層の不要部分を除去する。
但し、第１の接合部３０Ａは印刷法により形成してもよいし、はんだボールを搭載することで形成してもよい。この場合には、図２（ｃ）と図２（ｄ）とは別工程となる。
次に、図３（ａ）に示す工程では、図２（ａ）〜図２（ｃ）と同様の工程により、他方の面２０ｂに、第３の金属端子２１、及び第３の金属端子２１よりも高さが低い第４の金属端子２２が形成された第２の基板２０を作製する。そして、図２（ｄ）と同様の工程により、第４の金属端子２２の下端面に第２の接合部３０Ｂを形成する。なお、第３の金属端子２１の材料としては、第１の金属端子１１と同種の金属を用いる。例えば、第１の金属端子１１が銅（Ｃｕ）であれば、第３の金属端子２１も銅（Ｃｕ）で形成する。又、第４の金属端子２２の材料としては、低温はんだで接合可能な任意の金属を用いることができるが、第３の金属端子２１と同種の金属（例えば、Ｃｕ）を用いることが金属端子の製造工程を簡略化できる点で好適である。又、第２の接合部３０Ｂの材料としては、例えば、ＳｎＢｉ、ＳｎＺｎ、Ｉｎ等の低温はんだを用いることができる。
そして、第１の金属端子１１の上端面と第３の金属端子２１の下端面とが対向し、第１の接合部３０Ａの上端面と第２の接合部３０Ｂの下端面とが対向するように、第１の基板１０上に第２の基板２０を積層する。その後、第１の接合部３０Ａの上端面と第２の接合部３０Ｂの下端面とをスクラブ（擦動・摺動）や超音波により仮固定する。この時点では、第１の金属端子１１の上端面と第３の金属端子２１の下端面との間には、僅かな隙間が形成されている場合がある。又、第１の金属端子１１の上端面と第３の金属端子２１の下端面には、酸化膜が形成されている場合がある。
次に、図３（ｂ）に示す工程では、蟻酸雰囲気や水素ラジカル雰囲気等の還元雰囲気中で、第１の接合部３０Ａ及び第２の接合部３０Ｂを、夫々を構成する低温はんだの融点以上に加熱する。これにより、第１の接合部３０Ａ及び第２の接合部３０Ｂが溶融して一体化し接合部３０となり、溶融した接合部３０の表面張力により第１の金属端子１１と第３の金属端子２１とがセルフアライメントされる。又、蟻酸等の還元物質により、第１の金属端子１１の上端面及び第３の金属端子２１の下端面に形成された酸化膜が除去される。なお、蟻酸等の還元物質は、第１の金属端子１１の上端面と第３の金属端子２１の下端面との間に少しでも隙間があれば、そこから浸み込んで酸化膜を除去する。
隙間がないと第１の金属端子１１の上端面及び第３の金属端子２１の下端面の酸化膜が完全に除去されず、図３（ｃ）に示す工程において第１の金属端子１１の上端面及び第３の金属端子２１の下端面を接合することが困難となる。又、配線の微細化に伴い、酸化膜による電気抵抗の問題がある。そのため、接合部３０を介在させることで少しでも隙間を設け、酸化膜を除去し、接続信頼性を向上させる。
なお、仮に、第１の接合部３０Ａ及び第２の接合部３０Ｂが低温はんだでない（融点が２００℃よりも高い）とすると、この工程において、２００℃よりも高い温度に加熱する必要が生じる。酸化膜の他に、２００℃よりも高い温度環境では、第１の金属端子１１及び第３の金属端子２１を構成する銅の結晶化が進み、銅同士の直接接合に必要な活性状態（微細結晶）が維持できなくなる新たな問題が生じる。
そこで、本実施の形態では、第１の接合部３０Ａ及び第２の接合部３０Ｂを低温はんだとし、加熱温度を２００℃以下に抑え、銅同士の直接接合に必要な活性状態（微細結晶）を維持するために低い温度環境で行う。これらにより、図３（ｃ）に示す工程において第１の金属端子１１の上端面及び第３の金属端子２１の下端面を信頼性の高い状態で接合することが可能となる。
次に、図３（ｃ）に示す工程では、図３（ｂ）に示す工程と同様の還元雰囲気中で第２の基板２０を第１の基板１０側に押圧し、第１の金属端子１１の上端面と第３の金属端子２１の下端面とを熱圧着により直接接合する。第１の金属端子１１及び第３の金属端子２１の材料が銅（Ｃｕ）であれば、両者は所謂Ｃｕ−Ｃｕ接合される。その後、常温に戻すことにより接合部３０が凝固し、第２の金属端子１２と第４の金属端子２２とは、接合部３０を介して接合される。
図３（ｃ）に示す工程の後、第１の基板１０の一方の面１０ａと第２の基板２０の他方の面２０ｂとの間に、熱硬化性のエポキシ系樹脂等の絶縁性樹脂を充填して硬化させ封止部４０を形成することにより、図１に示す実装構造体１が完成する。
このように、本実施の形態では、金属端子同士を直接接合する際のアライメント方法として、低温はんだを用いたセルフアライメントの方法を採用している。これにより、アライメント機構を有する高価な装置を用いることなく、金属端子同士を精度よく位置合わせできる。なお、蟻酸雰囲気や水素ラジカル雰囲気等の還元雰囲気中で低温はんだの加熱等を行う装置は、アライメント機構を有するものではないため、安価である。
又、本実施の形態では、金属端子同士を直接接合する工程の前に、接合部同士を仮固定する工程を有している。これにより、例えば、半導体ウェハ上に個片化された多数の半導体チップを接合する場合等でも、半導体ウェハと個片化された各半導体チップとを適切な位置で仮固定することで、両者が位置ずれすることなく接合工程に移行することが可能となる。又、実装した際の対向した端子同士の位置ずれを小さくすることで、接合面積を多く確保し、応力によるクラックや電気抵抗等を減少させることができる。
以上、好ましい実施の形態等について詳説したが、上述した実施の形態等に制限されることはなく、特許請求の範囲に記載された範囲を逸脱することなく、上述した実施の形態等に種々の変形及び置換を加えることができる。
１０ 第１の基板
１０ａ 第１の基板の一方の面
１１ 第１の金属端子
１２ 第２の金属端子
２０ 第２の基板
２０ｂ 第２の基板の他方の面
２１ 第３の金属端子
２２ 第４の金属端子
３０ 接合部
３０Ａ 第１の接合部
３０Ｂ 第２の接合部
４０ 封止部

Claims (7)

  1. 第１の金属端子、及び前記第１の金属端子よりも高さが低い第２の金属端子、が第１面に形成された第１の基板と、
    第３の金属端子、及び前記第３の金属端子よりも高さが低い第４の金属端子、が第２面に形成された第２の基板と、を有し、
    前記第２の基板の前記第２面と前記第１の基板の前記第１面とが対向するように、前記第１の基板上に前記第２の基板を備え、
    前記第１の金属端子、前記第２の金属端子、前記第３の金属端子、及び前記第４の金属端子は、何れも銅からなり、
    前記第１の金属端子と前記第３の金属端子とは直接接合されており、
    前記第２の金属端子と前記第４の金属端子とは、接合部を介して接合されている実装構造体。
  2. 前記第２の金属端子及び前記第４の金属端子は、前記第１の金属端子及び前記第３の金属端子が配置される領域よりも外周側の領域に夫々複数個配置されている請求項１に記載の実装構造体。
  3. 前記第１の基板及び前記第２の基板は、夫々矩形であり、
    前記第２の金属端子及び前記第４の金属端子の全部又は一部は、前記矩形の対角線上に配置されている請求項２に記載の実装構造体。
  4. 前記接合部は、融点が２００℃以下のはんだである請求項１乃至３の何れか一項に記載の実装構造体。
  5. 第１の金属端子、及び前記第１の金属端子よりも高さが低い第２の金属端子、が第１面に形成された第１の基板を作製する工程と、
    前記第１の金属端子と同種の金属からなる第３の金属端子、及び前記第３の金属端子よりも高さが低い第４の金属端子、が第２面に形成された第２の基板を作製する工程と、
    前記第２の金属端子上に第１の接合部を形成し、第４の金属端子上に第２の接合部を形成する工程と、
    前記第１の金属端子の端面と前記第３の金属端子の端面とが対向し、前記第１の接合部の端面と前記第２の接合部の端面とが対向するように、前記第１の基板上に前記第２の基板を積層する工程と、
    前記第１の接合部の端面と前記第２の接合部の端面とを仮固定する工程と、
    前記第１の接合部及び前記第２の接合部を溶融させ、前記第１の金属端子と前記第３の金属端子とをセルフアライメントすると共に、前記第１の金属端子の端面と前記第３の金属端子の端面の酸化膜を除去する工程と、
    前記第１の接合部及び前記第２の接合部が溶融した状態で、前記第２の基板を前記第１の基板側に押圧し、前記第１の金属端子の端面と前記第３の金属端子の端面とを直接接合する工程と、
    前記第１の接合部及び前記第２の接合部を凝固し、前記第２の金属端子と前記第４の金属端子とを、凝固した接合部を介して接合する工程と、を有し、
    前記第２の金属端子及び前記第４の金属端子は、前記第１の金属端子と前記第３の金属端子と同種の金属からなり、
    前記セルフアライメントすると共に酸化膜を除去する工程、前記直接接合する工程、及び前記凝固した接合部を介して接合する工程は、還元雰囲気中で行われる実装構造体の製造方法。
  6. 前記積層する工程よりも前に、前記第１の金属端子の端面及び前記第３の金属端子の端面を研磨又は研削して活性化する工程を有する請求項５に記載の実装構造体の製造方法。
  7. 前記第１の接合部及び前記第２の接合部は、融点が２００℃以下のはんだである請求項５又は６に記載の実装構造体の製造方法。
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