JP5187341B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP5187341B2 JP5187341B2 JP2010093034A JP2010093034A JP5187341B2 JP 5187341 B2 JP5187341 B2 JP 5187341B2 JP 2010093034 A JP2010093034 A JP 2010093034A JP 2010093034 A JP2010093034 A JP 2010093034A JP 5187341 B2 JP5187341 B2 JP 5187341B2
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Description
図1は、本発明の実施の形態1に係る半導体装置の製造方法を示すフローチャートである。このフローチャート及び図2〜4を参照しながら、実施の形態1に係る半導体装置の製造方法について説明する。
実施の形態2に係る半導体装置の製造方法は、マザーチップ10の回路面に半田ペーストを堆積する工程が実施の形態1の図2(e)とは異なる。その他の工程は、実施の形態1と同様である。
実施の形態3に係る半導体装置の製造方法は、マザーチップ10の回路面にドータチップ20をフリップチップ接続する工程が実施の形態1の図4(a)とは異なる。その他の工程は、実施の形態1と同様である。
図7は、本発明の実施の形態4に係る半導体装置を示す断面図である。この半導体装置は、回路基板33の上面に、ドータチップ20に対応する領域に凹部39を設けたものである。その他の構成は実施の形態1と同様である。これにより、ドータチップ20が厚い場合でも、マザーチップ10と回路基板33を良好にフリップチップ接続することができる。
図8は、本発明の実施の形態5に係る半導体装置を示す断面図である。この半導体装置は、本発明をマザーチップ10の回路面に再配線層40を形成し、その上を表面保護膜41で覆っている。ただし、ドータチップ20を接続する領域には再配線層40及び表面保護膜41は形成しないようにする。これにより、メタルポスト16,26の高さを確保することができるため、アンダーフィルの際にチップ間に樹脂34を注入しやすくなる。
図9は、本発明の実施の形態6に係る半導体装置を示す断面図である。この半導体装置は、マザーチップ10の回路面に、ドータチップ20の他に、チップコンデンサ42が搭載されている。その他の構成は実施の形態1と同様である。
17 レジスト
16,26 メタルポスト
18 半田ペースト
19 半田ボール
20 ドータチップ
27 接合部材
31 ステージ
32 ハンドル部
33 回路基板
39 凹部
36 メタルマスク
40 再配線層
41 表面保護膜
42 チップコンデンサ
Claims (3)
- 複数のマザーチップを有するウェハを準備する工程と、
前記ウェハの状態で、前記複数のマザーチップの各々の回路面に、外部接続端子として用いられる複数の半田ボールを形成する第1工程と、
前記第1工程の後に、前記ウェハの状態で、前記複数のマザーチップの各々の回路面にドータチップをフリップチップ接続する第2工程と、
前記第2工程の後に、前記ウェハをダイシングにより個々に分離して、前記ドータチップ及び前記複数の半田ボールが接続された複数のマザーチップを形成する第3工程とを備え、
前記複数の半田ボールを形成する工程は、
前記マザーチップの回路面に、前記複数の半田ボールを形成する領域に対応する位置に開口を有するレジストを形成する工程と、
前記レジストの開口に半田ペーストを充填する工程と、
前記レジストを除去した後、前記マザーチップを加熱して前記半田を溶融して前記複数の半田ボールを形成する工程とを有し、
前記複数のマザーチップの各々の回路面にドータチップをフリップチップ接続する工程は、前記複数の半田ボールの融点より低い第1温度で、ステージ上に前記マザーチップを設置した状態で、かつ、前記ドータチップを前記第1温度より高い第2温度にした状態で行なわれることを特徴とする半導体装置の製造方法。 - 前記第1温度は、100℃〜150℃であることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記複数のマザーチップの各々の回路面にドータチップをフリップチップ接続する工程は、前記ドータチップに超音波振動を与える工程を含むことを特徴とする請求項2に記載の半導体装置の製造方法。
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WO2014168175A1 (ja) * | 2013-04-09 | 2014-10-16 | 昭和電工株式会社 | はんだ回路基板の製造方法、はんだ回路基板及び電子部品の実装方法 |
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JP3423930B2 (ja) * | 1999-12-27 | 2003-07-07 | 富士通株式会社 | バンプ形成方法、電子部品、および半田ペースト |
JP2001308258A (ja) * | 2000-04-26 | 2001-11-02 | Sony Corp | 半導体パッケージ及びその製造方法 |
JP3850352B2 (ja) * | 2002-08-01 | 2006-11-29 | ローム株式会社 | 半導体装置の製造方法 |
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