JP6613806B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6613806B2 JP6613806B2 JP2015209389A JP2015209389A JP6613806B2 JP 6613806 B2 JP6613806 B2 JP 6613806B2 JP 2015209389 A JP2015209389 A JP 2015209389A JP 2015209389 A JP2015209389 A JP 2015209389A JP 6613806 B2 JP6613806 B2 JP 6613806B2
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- 239000004065 semiconductor Substances 0.000 title claims description 182
- 229920005989 resin Polymers 0.000 claims description 231
- 239000011347 resin Substances 0.000 claims description 231
- 238000007789 sealing Methods 0.000 claims description 194
- 239000000758 substrate Substances 0.000 claims description 36
- 229910000679 solder Inorganic materials 0.000 claims description 29
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- 229910020935 Sn-Sb Inorganic materials 0.000 claims description 5
- 229910008757 Sn—Sb Inorganic materials 0.000 claims description 5
- 229910020888 Sn-Cu Inorganic materials 0.000 claims description 3
- 229910019204 Sn—Cu Inorganic materials 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- 230000000630 rising effect Effects 0.000 claims description 2
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- 230000035882 stress Effects 0.000 description 11
- 230000007423 decrease Effects 0.000 description 5
- 230000003247 decreasing effect Effects 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 5
- 238000004088 simulation Methods 0.000 description 5
- 239000003507 refrigerant Substances 0.000 description 4
- 230000008646 thermal stress Effects 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 238000013213 extrapolation Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 description 1
- 229910020932 Sn-Sb-Ag Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Description
[第1の実施の形態]
第1の実施の形態の半導体装置について、図1を用いて説明する。
なお、図1(A)は、半導体装置10の上面図を、図1(B)は、図1(A)における一点鎖線X−Xにおける断面図をそれぞれ表している。また、図1(A)では、封止樹脂18の図示は省略している。
図2は、第1の実施の形態における半導体装置に含まれる半導体素子の主電極を示す図である。
半導体素子14の表面電極20は、電極23a,23bと、電極23a,23bの表面に設けられ、パッド電極24と電気的に接続されるゲートランナー22a,22bと、これらの周囲を取り囲むように設けられたガードリング21と、を含む。
ΔεP×Nf b=C ・・・・・・(1)
但し、ΔεP:塑性ひずみ振幅、Nf:疲労寿命、b,C:材料による定数
式(1)によれば、疲労寿命を延ばすためには、塑性ひずみ振幅を小さくすることが必要となることが分かる。
なお、熱応力シミュレーションでは、半導体素子14の表面電極は、Al−Si(シリコン)材料により構成され、その厚さは5μmの場合が適用されている。さらに、このような表面電極上には、4.5μmの厚さのニッケルメッキが施されている。
リード端子16は、その厚さは0.5mmであって、銅(具体的には、C1020−1/2H:線膨張係数は16.7×10-6/℃)により構成されている。
なお、図3の横軸は、封止樹脂18の線膨張係数(×10 −6 /℃)を、図3の縦軸は、半導体素子14の表面電極の塑性ひずみ振幅(%)をそれぞれ表している。
図3のグラフによれば、ヤング率が5.1×109Paの場合(丸印)には、封止樹脂18の線膨張係数が7.5×10 −6 /℃、13.4×10 −6 /℃、17.6×10 −6 /℃と増加するに連れて、塑性ひずみ振幅は、1.2%、0.97%、0.76%と減少している。
(封止樹脂18のヤング率)×{(リード端子16の線膨張係数)−(封止樹脂18の線膨張係数)} ・・・・・・指標(A)
そこで、半導体素子14の表面電極の塑性ひずみ振幅が、上記の指標(A)に応じて変化する場合について、図4を用いて説明する。
なお、図4の横軸は、「封止樹脂18のヤング率×{リード端子16の線膨張係数(16.7×10-6)−封止樹脂18の線膨張係数}×(103Pa/℃)」を表し、図4の縦軸は、半導体素子14の表面電極の塑性ひずみ振幅(%)を表している。
この図4のグラフによれば、「封止樹脂18のヤング率×{(16.7×10-6)−封止樹脂18の線膨張係数}」が略0から増加するに連れて、塑性ひずみ振幅も増加していることが分かる。一方、「封止樹脂18のヤング率×{(16.7×10-6)−封止樹脂18の線膨張係数}」が略0から減少するに連れて、塑性ひずみ振幅は増加していることが分かる。
第2の実施の形態では、第1の実施の形態の図4のグラフの結果に対して、封止樹脂18の樹脂厚Dを考慮した場合について説明する。
図5は、第2の実施の形態における封止樹脂の樹脂厚に対する塑性ひずみ振幅を示すグラフである。
また、図5では、「封止樹脂18のヤング率×{(16.7×10-6)−封止樹脂18の線膨張係数}」が31.9×103(Pa/℃)の場合であって、リード端子16の高さHが、3.4mmの場合である。
(封止樹脂18のヤング率)×{(リード端子16の線膨張係数)−(封止樹脂18の線膨張係数)}×(封止樹脂18の樹脂厚D) ・・・・・・指標(B)
次いで、半導体素子14の表面電極の塑性ひずみ振幅が、上記の指標(B)に応じて変化する場合について、図6を用いて説明する。
なお、図6の横軸は、「封止樹脂18のヤング率×{リード端子16の線膨張係数(16.7×10-6)−封止樹脂18の線膨張係数}×(封止樹脂18の樹脂厚)×(103Pa・mm/℃)」を表し、図6の縦軸は、半導体素子14の表面電極の塑性ひずみ振幅(%)を表している。
この図6のグラフによれば、「封止樹脂18のヤング率×{(16.7×10-6)−封止樹脂18の線膨張係数}×(封止樹脂18の樹脂厚)」が略0から増加するに連れて、塑性ひずみ振幅も増加していることが分かる。一方、「封止樹脂18のヤング率×{(16.7×10-6)−封止樹脂18の線膨張係数}×(封止樹脂18の樹脂厚)」が略0から減少するに連れて、塑性ひずみ振幅は増加していることが分かる。
第3の実施の形態では、第1の実施の形態の図4のグラフの結果に対して、リード端子16の高さHを考慮した場合について説明する。
図7は、第3の実施の形態におけるリード端子の高さに対する塑性ひずみ振幅を示すグラフである。
また、図7では、「封止樹脂18のヤング率×{(16.7×10-6)−封止樹脂18の線膨張係数}」が31.9×103(Pa/℃)の場合であって、封止樹脂18の樹脂厚Dが10.9mmの場合である。
(封止樹脂18のヤング率)×{(リード端子16の線膨張係数)−(封止樹脂18の線膨張係数)}×(リード端子16の高さH) ・・・・・・指標(C)
次いで、半導体素子14の表面電極の塑性ひずみ振幅が、上記の指標(C)に応じて変化する場合について、図8を用いて説明する。
なお、図8の横軸は、「封止樹脂18のヤング率×{リード端子16の線膨張係数(16.7×10-6)−封止樹脂18の線膨張係数}×(リード端子16の高さ)×(103Pa・mm/℃)」を表し、図8の縦軸は、半導体素子14の表面電極の塑性ひずみ振幅(%)を表している。
図8のグラフによれば、「封止樹脂18のヤング率×{(16.7×10-6)−封止樹脂18の線膨張係数}×(封止樹脂18の樹脂厚)×(リード端子16の高さH)」が略0から増加するに連れて、塑性ひずみ振幅も増加していることが分かる。一方、「封止樹脂18のヤング率×{(16.7×10-6)−封止樹脂18の線膨張係数}×(リード端子16の高さH)」が略0から減少するに連れて、塑性ひずみ振幅は増加していることが分かる。
第4の実施の形態では、半導体素子の表面電極上のリード端子(第4の実施の形態ではジャンパー端子)を、第1〜第3の実施の形態で説明したように選択された封止樹脂で封止する具体例について説明する。
図9は、第4の実施の形態における半導体装置を示す図である。
半導体装置100は、ケース110と、ケース110の収納部112a,112b,112cにそれぞれ収納された積層基板140とを含む。
さらに、積層基板140について、図10を用いて説明する。
図10は、第4の実施の形態における半導体装置の積層基板を示す斜視図である。
さらに、図9の半導体装置100に対する一点鎖線X−Xにおける断面図について、図11及び図12を用いて説明する。
図12は、第4の実施の形態における半導体装置の要部拡大図である。
すなわち、半導体装置100では、電気的に接続した側面部117b及び平板部145baと、電気的に接続した側面部116b及び平板部145aaとが、樹脂プレート147を挟んで平行に配置されている。また、半導体装置100では、側面部116cと、側面部117cとが平行に配置されている。また、半導体装置100では、側面部117bと、側面部118bとが平行に配置されている。
11,13a,13b,15 はんだ
12 積層基板
12a 絶縁板
12b,12c 回路板
12d 金属板
14 半導体素子
16 リード端子
16a,16e 接合部
16b,16d 段差部
16c 配線部
17 ケース
18 封止樹脂
19 冷却器
Claims (10)
- 半導体素子と、
絶縁板と、前記絶縁板のおもて面に配置され、前記半導体素子が配置される回路板とを有する積層基板と、
前記半導体素子のおもて面の主電極に、Sn−Cu系またはSn−Sb系のはんだを介して設けられたリード端子と、
前記半導体素子と前記積層基板と前記リード端子とを封止する封止樹脂と、
を有し、
前記封止樹脂のヤング率×(前記リード端子の線膨張係数−前記封止樹脂の線膨張係数)の値が−26×103(Pa/℃)以上、かつ、50×103(Pa/℃)以下である、
半導体装置。 - 前記封止樹脂は、少なくとも、前記積層基板の前記半導体素子が配置されているおもて面の反対側の裏面から前記半導体素子及び前記リード端子が配置されている側に、前記積層基板と前記半導体素子と前記リード端子とを封止し、
前記封止樹脂のヤング率×(前記リード端子の線膨張係数−前記封止樹脂の線膨張係数)×前記封止樹脂の高さの値が−255×103(Pa・mm/℃)以上、かつ、515×103(Pa・mm/℃)以下である、
請求項1記載の半導体装置。 - 前記封止樹脂の高さは、6mm以上、かつ、11mm以下である、
請求項2記載の半導体装置。 - 前記封止樹脂のヤング率×(前記リード端子の線膨張係数−前記封止樹脂の線膨張係数)×前記リード端子の高さの値が−93×103(Pa・mm/℃)以上、かつ、159.5×103(Pa・mm/℃)以下である、
請求項1記載の半導体装置。 - 前記リード端子の前記半導体素子からの高さは、2mm以上、かつ、5mm以下である、
請求項4記載の半導体装置。 - 前記封止樹脂のヤング率は、5.1×109Pa以上、かつ、19.6×109Pa以下であり、
前記封止樹脂の線膨張係数は、7.5×10−6/℃以上、かつ、17.6×10−6/℃以下である、
請求項1乃至5のいずれかに記載の半導体装置。 - 前記リード端子は、銅により構成されている、
請求項1乃至6のいずれかに記載の半導体装置。 - 前記リード端子は、前記半導体素子の前記主電極に前記主電極に平行に設けられる平板状の接合部と、前記接合部の端部から、垂直に立ち上がっている段差部と、
を有する請求項1乃至7のいずれかに記載の半導体装置。 - 前記リード端子の前記接合部の前記段差部下側の角部は曲率が設けられている、
請求項8記載の半導体装置。 - 前記はんだがSn−Sb系である場合、添加量が0%より多く、3%以下のアンチモンが添加されている、
請求項1記載の半導体装置。
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