JP6507433B2 - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
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- JP6507433B2 JP6507433B2 JP2015123893A JP2015123893A JP6507433B2 JP 6507433 B2 JP6507433 B2 JP 6507433B2 JP 2015123893 A JP2015123893 A JP 2015123893A JP 2015123893 A JP2015123893 A JP 2015123893A JP 6507433 B2 JP6507433 B2 JP 6507433B2
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- discharge
- processing
- substrate
- substrates
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- 239000000758 substrate Substances 0.000 title claims description 93
- 239000007788 liquid Substances 0.000 claims description 80
- 238000005192 partition Methods 0.000 description 13
- 239000000243 solution Substances 0.000 description 8
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000007599 discharging Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
Description
図1に示す基板処理装置10は、処理槽本体12aと、この外側に一体に設けられた外槽12bとから構成される処理槽12を備える。処理槽本体12aは、底面と、底面に一体に形成された側面とを有する箱状であり、矩形の上部開口を有している。処理槽本体12aにおいては、紙面に直交する方向に延びている一対の面を、特に側面12a1とする。図1には、保持具22に収納された複数枚の基板24が、処理槽本体12a内の図示しない処理液中に浸漬されている状態を示している。ここでの複数枚の基板24は、半導体基板である。
本実施形態の基板処理装置10においては、給液口20から給液された処理液の一部は、矢印A1,A2,A3で表されるように供給路18内を流れて、第1の吐出部14b1の第1の基端14bsから第1の吐出部14b1に流入する。給液口20から給液された処理液の残部は、矢印B1,B2,B3で表されるように供給路18内を流れて、第2の吐出部14b2の第2の基端14beから第2の吐出部14b2に流入する。第1の吐出部14b1と第2の吐出部14b2とは隔壁16によって隔てられているので、基板処理装置10においては、給液口20から給液された処理液は、隔壁16に向かって供給路18内を2方向に流れることになる。
本発明は上記実施形態に限定されるものではなく、本発明の趣旨の範囲内で適宜変更することができる。
12 処理槽
12a 処理槽本体
12b 外槽
14,26,28 直管
14b,34b 吐出部
14b1 第1の吐出部
14b2 第2の吐出部
14bs 第1の基端
14be 第2の基端
15,35 開口
16 隔壁
161,162 先端面
18 供給路
20 給液口
22 保持具
24 複数枚の基板
27,29 L字状の連結管
31 T字状の連結管
Claims (4)
- 処理液を貯留し、所定の間隔で配置された複数枚の基板を処理する処理槽と、
前記複数枚の基板の厚さ方向に前記処理液が流通する流路と、前記流路に沿って形成された複数の開口と、前記流路の先端を閉じる先端面とを有し、前記処理槽内に設けられた、第1および第2の吐出部と、
前記第1の吐出部および前記第2の吐出部の基端へ前記処理液を供給し、給液口を有する供給路と
を備え、
前記給液口から前記第2の吐出部の前記先端面までの長さは、前記給液口から前記第1の吐出部の前記先端面までの長さと実質的に等しいことを特徴とする基板処理装置。 - 前記第2の吐出部は、前記第1の吐出部と同軸上に設けられていることを特徴とする請求項1記載の基板処理装置。
- 前記第2の吐出部の前記先端面は、前記第1の吐出部の前記先端面と一体に設けられていることを特徴とする請求項2記載の基板処理装置。
- 前記吐出部における前記複数の開口の総面積は、前記2つの流路における前記吐出部の断面積の20%から28%の範囲であることを特徴とする請求項1〜3のいずれか1項記載の基板処理装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015123893A JP6507433B2 (ja) | 2015-06-19 | 2015-06-19 | 基板処理装置 |
SG11201710229SA SG11201710229SA (en) | 2015-06-19 | 2016-06-14 | Substrate processing device |
PCT/JP2016/067669 WO2016204145A1 (ja) | 2015-06-19 | 2016-06-14 | 基板処理装置 |
US15/737,678 US20180174856A1 (en) | 2015-06-19 | 2016-06-14 | Substrate processing device |
CN201680029809.4A CN107735852B (zh) | 2015-06-19 | 2016-06-14 | 基板处理装置 |
KR1020187001433A KR102464722B1 (ko) | 2015-06-19 | 2016-06-14 | 기판 처리 장치 |
TW105118890A TWI692805B (zh) | 2015-06-19 | 2016-06-16 | 基板處理裝置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015123893A JP6507433B2 (ja) | 2015-06-19 | 2015-06-19 | 基板処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017011063A JP2017011063A (ja) | 2017-01-12 |
JP6507433B2 true JP6507433B2 (ja) | 2019-05-08 |
Family
ID=57546536
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015123893A Active JP6507433B2 (ja) | 2015-06-19 | 2015-06-19 | 基板処理装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20180174856A1 (ja) |
JP (1) | JP6507433B2 (ja) |
KR (1) | KR102464722B1 (ja) |
CN (1) | CN107735852B (ja) |
SG (1) | SG11201710229SA (ja) |
TW (1) | TWI692805B (ja) |
WO (1) | WO2016204145A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7178261B2 (ja) * | 2018-12-27 | 2022-11-25 | 東京エレクトロン株式会社 | 基板液処理装置 |
JP7508339B2 (ja) | 2020-10-30 | 2024-07-01 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5000795A (en) * | 1989-06-16 | 1991-03-19 | At&T Bell Laboratories | Semiconductor wafer cleaning method and apparatus |
US5030362A (en) * | 1989-08-21 | 1991-07-09 | Exxon Chemical Patents Inc. | Process for stripping liquid systems and sparger system useful therefor |
JP3214503B2 (ja) | 1990-11-28 | 2001-10-02 | 東京エレクトロン株式会社 | 洗浄装置 |
JPH10335284A (ja) * | 1997-05-29 | 1998-12-18 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
US6199568B1 (en) * | 1997-10-20 | 2001-03-13 | Dainippon Screen Mfg. Co., Ltd. | Treating tank, and substrate treating apparatus having the treating tank |
JP2000251724A (ja) * | 1999-02-26 | 2000-09-14 | Canon Inc | 電子装置用基板の洗浄方法 |
JP3550507B2 (ja) * | 1999-03-25 | 2004-08-04 | Necエレクトロニクス株式会社 | 被洗浄体のすすぎ方法およびその装置 |
JP2001077083A (ja) * | 1999-09-08 | 2001-03-23 | Sanken Electric Co Ltd | 半導体ウエハのエッチング法及び装置 |
JP3960774B2 (ja) * | 2001-11-07 | 2007-08-15 | 株式会社荏原製作所 | 無電解めっき装置及び方法 |
JP4035035B2 (ja) * | 2002-12-03 | 2008-01-16 | 大日本スクリーン製造株式会社 | 基板への処理液供給用ノズルおよび基板処理装置 |
US20040140365A1 (en) * | 2002-12-26 | 2004-07-22 | Dainippon Screen Mfg. Co., Ltd. | Substrate treating apparatus |
WO2009047970A1 (ja) * | 2007-10-10 | 2009-04-16 | Toray Industries, Inc. | 微細気泡散気管、微細気泡散気装置、および、浸漬型膜分離装置 |
JP5829446B2 (ja) * | 2011-07-13 | 2015-12-09 | 株式会社Screenホールディングス | 基板処理装置及びその液交換方法 |
JP5865085B2 (ja) * | 2012-01-18 | 2016-02-17 | グンゼ株式会社 | 創洗浄評価装置、及び創洗浄評価方法 |
JP5752210B2 (ja) * | 2013-11-01 | 2015-07-22 | 株式会社Screenホールディングス | 基板処理装置 |
-
2015
- 2015-06-19 JP JP2015123893A patent/JP6507433B2/ja active Active
-
2016
- 2016-06-14 US US15/737,678 patent/US20180174856A1/en not_active Abandoned
- 2016-06-14 KR KR1020187001433A patent/KR102464722B1/ko active IP Right Grant
- 2016-06-14 WO PCT/JP2016/067669 patent/WO2016204145A1/ja active Application Filing
- 2016-06-14 CN CN201680029809.4A patent/CN107735852B/zh active Active
- 2016-06-14 SG SG11201710229SA patent/SG11201710229SA/en unknown
- 2016-06-16 TW TW105118890A patent/TWI692805B/zh active
Also Published As
Publication number | Publication date |
---|---|
WO2016204145A1 (ja) | 2016-12-22 |
TW201724230A (zh) | 2017-07-01 |
TWI692805B (zh) | 2020-05-01 |
US20180174856A1 (en) | 2018-06-21 |
CN107735852B (zh) | 2021-09-10 |
KR102464722B1 (ko) | 2022-11-09 |
JP2017011063A (ja) | 2017-01-12 |
KR20180018775A (ko) | 2018-02-21 |
CN107735852A (zh) | 2018-02-23 |
SG11201710229SA (en) | 2018-01-30 |
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