JP6504755B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 39
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 238000005530 etching Methods 0.000 claims description 67
- 238000000034 method Methods 0.000 claims description 57
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 24
- 239000000460 chlorine Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 19
- 125000001309 chloro group Chemical group Cl* 0.000 claims description 18
- 125000001153 fluoro group Chemical group F* 0.000 claims description 16
- 229910052801 chlorine Inorganic materials 0.000 claims description 9
- 238000005468 ion implantation Methods 0.000 claims description 9
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 8
- 125000001246 bromo group Chemical group Br* 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 239000011368 organic material Substances 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 116
- 239000010410 layer Substances 0.000 description 12
- 229910052731 fluorine Inorganic materials 0.000 description 8
- 238000003860 storage Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 230000003667 anti-reflective effect Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000003384 imaging method Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000004299 exfoliation Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Drying Of Semiconductors (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
Claims (13)
- 半導体装置の製造方法において、
半導体基板の上に、絶縁膜である第1膜と、多結晶シリコン膜である第2膜と、有機材料からなる第3膜と、をこの順序で形成する成膜工程と、
前記第3膜の上に第1のマスクパターンを形成する工程と、
前記第1のマスクパターンを用いて前記第2膜からゲート電極を形成するゲート電極の形成工程と、
前記第1のマスクパターンの一部と、前記ゲート電極に隣接する領域と、の上に開口を有する第2のマスクパターンを形成する工程と、
前記第1のマスクパターンと、前記第2のマスクパターンと、をマスクとして、前記半導体基板に対してイオン注入を行う注入工程と、を有し、
前記ゲート電極の形成工程は、前記第3膜のうちの前記第1のマスクパターンと前記第2膜との間に位置する第1部分を残しつつ第1の処理ガスを用いて前記第3膜をエッチングする第1のエッチング工程と、前記第2膜のうちの前記第1部分と前記第1膜との間に位置する第2部分を残しつつ第2の処理ガスを用いて前記第2膜をエッチングする第2のエッチング工程と、第3の処理ガスを用いて前記第2膜をオーバーエッチングする第3のエッチング工程とを含み、
前記第1のエッチング工程において前記半導体基板の上に形成される第1の堆積物と、前記第2のエッチング工程において前記半導体基板の上に形成される第2の堆積物と、前記第3のエッチング工程において前記半導体基板の上に形成される第3の堆積物と、が塩素原子を含みフッ素原子を含まず、
前記第2の堆積物と、前記第3の堆積物と、が臭素原子を更に含み、
前記イオン注入は、前記第1のマスクパターンの側壁、前記第1部分の側壁および前記第2部分の側壁が、前記第1の堆積物と前記第2の堆積物と前記第3の堆積物とを含む堆積物で覆われた状態で行われることを特徴とする製造方法。 - 前記第3のエッチング工程において前記第1膜の一部がエッチングされることを特徴とする請求項1に記載の製造方法。
- 前記第1の処理ガスが、塩素原子を含むガスを含み、かつ、フッ素原子を含むガスを含まず、
前記第2の処理ガスと前記第3の処理ガスとが、塩素原子を含むガスおよび臭素原子を含むガスを含み、かつ、フッ素原子を含むガスを含まないことを特徴とする請求項1又は2に記載の製造方法。 - 前記第1の処理ガスが臭素原子を含むガスを含まないことを特徴とする請求項3に記載の製造方法。
- 前記第1の処理ガス、前記第2の処理ガスおよび前記第3の処理ガスにおける前記塩素原子を含むガスがCl2ガスであることを特徴とする請求項3又は4に記載の製造方法。
- 前記第2の処理ガスおよび前記第3の処理ガスにおける前記臭素原子を含むガスがHBrガスであることを特徴とする請求項3乃至5のいずれか1項に記載の製造方法。
- 前記第1の処理ガスと、前記第2の処理ガスと、前記第3の処理ガスとが、O2ガスを含むことを特徴とする請求項1乃至6のいずれか1項に記載の製造方法。
- 前記第1のエッチング工程において、1.33Pa以下の圧力でエッチングが行われることを特徴とする請求項1乃至7のいずれか1項に記載の製造方法。
- 前記第2のエッチング工程において、前記第2の処理ガスが、エッチングの開始時でCl2ガスのみを含み、その後、Cl2ガスと、Cl2ガス以外のガスと、を含むことを特徴とする請求項1乃至8のいずれか1項に記載の製造方法。
- 前記第2の処理ガスと、前記第3の処理ガスと、が同一の処理ガスであることを特徴とする請求項1乃至8のいずれか1項に記載の製造方法。
- 前記第3膜は前記第2膜の上面に接触するように形成されることを特徴とする請求項1乃至10のいずれか1項に記載の製造方法。
- 前記半導体装置は、光電変換素子と、前記光電変換素子に蓄積された電荷を転送するための転送トランジスタとを備え、
前記ゲート電極は前記転送トランジスタのゲート電極であり、
前記注入工程により、前記光電変換素子の一部を構成する半導体領域が形成されることを特徴とする請求項1乃至11のいずれか1項に記載の製造方法。 - 前記注入工程の後に、前記第1のマスクパターン、前記第2のマスクパターンおよび前記第3膜を剥離する工程を含む、
ことを特徴とする請求項1乃至12のいずれか1項に記載の製造方法。
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JP2014130686A JP6504755B2 (ja) | 2014-06-25 | 2014-06-25 | 半導体装置の製造方法 |
US14/742,952 US9306109B2 (en) | 2014-06-25 | 2015-06-18 | Semiconductor device manufacturing method |
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JP2014130686A JP6504755B2 (ja) | 2014-06-25 | 2014-06-25 | 半導体装置の製造方法 |
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JP2016009805A JP2016009805A (ja) | 2016-01-18 |
JP2016009805A5 JP2016009805A5 (ja) | 2017-06-29 |
JP6504755B2 true JP6504755B2 (ja) | 2019-04-24 |
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JP2017143175A (ja) | 2016-02-10 | 2017-08-17 | 株式会社東芝 | 磁気記憶装置 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPH01154561A (ja) * | 1987-12-11 | 1989-06-16 | Hitachi Ltd | 半導体装置およびその製造方法 |
JP3263852B2 (ja) * | 1991-11-15 | 2002-03-11 | ソニー株式会社 | プラズマ装置およびこれを用いたドライエッチング方法 |
JP3319003B2 (ja) | 1993-03-18 | 2002-08-26 | ソニー株式会社 | ゲート絶縁膜上のゲート電極材料のドライエッチング方法 |
JP3326644B2 (ja) * | 1993-11-16 | 2002-09-24 | ソニー株式会社 | シリコン系材料層の加工方法 |
JP3403850B2 (ja) | 1995-04-03 | 2003-05-06 | 富士通株式会社 | 半導体装置の製造方法 |
JPH0982687A (ja) * | 1995-09-19 | 1997-03-28 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
TW339462B (en) | 1996-04-26 | 1998-09-01 | Texas Instruments Inc | Vertical sidewall nitride etch process |
US6309979B1 (en) * | 1996-12-18 | 2001-10-30 | Lam Research Corporation | Methods for reducing plasma-induced charging damage |
JPH10312991A (ja) * | 1997-05-12 | 1998-11-24 | Sony Corp | 有機系反射防止膜のプラズマエッチング方法 |
JP4232222B2 (ja) * | 1998-07-13 | 2009-03-04 | ソニー株式会社 | 半導体装置の製造方法 |
JP2000277494A (ja) * | 1999-03-26 | 2000-10-06 | Sony Corp | 有機系反射防止膜のエッチング方法および半導体装置の製造方法 |
JP2001196355A (ja) * | 2000-01-12 | 2001-07-19 | Kawasaki Steel Corp | 半導体装置の製造方法 |
KR100426486B1 (ko) * | 2001-12-22 | 2004-04-14 | 주식회사 하이닉스반도체 | 플래시 메모리 셀의 제조 방법 |
JP2006066536A (ja) * | 2004-08-25 | 2006-03-09 | Hitachi High-Technologies Corp | プラズマ処理装置及び処理方法 |
JP4750391B2 (ja) * | 2004-08-31 | 2011-08-17 | キヤノン株式会社 | 固体撮像装置の製造方法 |
JP2009060026A (ja) | 2007-09-03 | 2009-03-19 | Fujifilm Corp | 固体撮像素子の製造方法 |
JP5538922B2 (ja) * | 2009-02-06 | 2014-07-02 | キヤノン株式会社 | 固体撮像装置の製造方法 |
JP2011192664A (ja) * | 2010-03-11 | 2011-09-29 | Tokyo Electron Ltd | プラズマエッチング方法及びプラズマエッチング装置 |
JP5661524B2 (ja) * | 2011-03-22 | 2015-01-28 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
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JP2016009805A (ja) | 2016-01-18 |
US20150380595A1 (en) | 2015-12-31 |
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