JP6460582B2 - Amoledバックパネルの製造方法 - Google Patents
Amoledバックパネルの製造方法 Download PDFInfo
- Publication number
- JP6460582B2 JP6460582B2 JP2017522825A JP2017522825A JP6460582B2 JP 6460582 B2 JP6460582 B2 JP 6460582B2 JP 2017522825 A JP2017522825 A JP 2017522825A JP 2017522825 A JP2017522825 A JP 2017522825A JP 6460582 B2 JP6460582 B2 JP 6460582B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- polysilicon
- gate electrode
- back panel
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 35
- 229920001621 AMOLED Polymers 0.000 title claims 8
- 239000010410 layer Substances 0.000 claims description 155
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 120
- 229920005591 polysilicon Polymers 0.000 claims description 119
- 238000000034 method Methods 0.000 claims description 41
- 125000006850 spacer group Chemical group 0.000 claims description 27
- 229920002120 photoresistant polymer Polymers 0.000 claims description 26
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- 238000000206 photolithography Methods 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 9
- 239000011229 interlayer Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 6
- 239000003990 capacitor Substances 0.000 claims description 5
- 238000003860 storage Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 3
- 238000005224 laser annealing Methods 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 150000004767 nitrides Chemical class 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 239000010936 titanium Substances 0.000 description 6
- 229910004205 SiNX Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical group [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000036632 reaction speed Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910001923 silver oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Geometry (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Recrystallisation Techniques (AREA)
- Electrodes Of Semiconductors (AREA)
Description
そのうち、OLEDは、自発光、駆動電圧が低い、発光効率が高い、反応速度が速い、解像度とコントラストが高い、180度に近い視角、使用温度の範囲が広い、フレキシブルディスプレイと大面積全色表示を実現できる等の多くの長所があり、業界において最も発展の可能性がある表示装置であるとみなされている。
基板を提供し、前記基板にバッファ層を堆積する手順1と、
バッファ層にアモルファスシリコン層を堆積するとともに、アモルファスシリコン層にエキシマレーザーアニール処理を施し、アモルファスシリコンを結晶化し、ポリシリコン層に変え、ポリシリコン層にパターン化処理を施し、互いに間隔のあいた第1ポリシリコン部と、第2ポリシリコン部と、第3ポリシリコン部と、を形成する手順2と、
前記バッファ層、前記第1ポリシリコン部、前記第2ポリシリコン部および前記第3ポリシリコン部の上にゲート電極絶縁層を堆積する手順3と、
フォトリソグラフィープロセスによって、前記ゲート電極絶縁層上にフォトレジストパターンを形成し、
前記フォトレジストパターンは、完全に前記第1ポリシリコン部をカバーし、前記第2ポリシリコン部の中部をカバーし、前記第3ポリシリコン部は全くカバーしない手順4と、
前記フォトレジストパターンをカバー層とし、パターン化された前記ポリシリコン層にP型重ドープし、前記第2ポリシリコン部の両側と前記第3ポリシリコン部の全体において、P型重ドープ領域を形成する手順5と、
前記フォトレジストパターンを削除し、前記ゲート電極絶縁層上に第1金属層を堆積するとともにパターン化し、前記第1ポリシリコン部に対向する第1ゲート電極と、前記第2ポリシリコン部に対向する第2ゲート電極と、前記第3ポリシリコン部に対向する電極板と、を形成し、平面視したときに前記電極板は前記第3ポリシリコン部の全体を覆うように形成する手順6と、
パターン化された前記第1金属層をカバー層とし、パターン化されたポリシリコン部にN型軽ドープすることによって、前記第1ゲート電極にカバーされていない前記第1ポリシリコン部の両側にN型軽ドープ領域を形成する手順7と、
前記ゲート電極絶縁層、前記第1ゲート電極、前記第2ゲート電極および前記電極板上に絶縁層を堆積し、さらに前記絶縁層に異方性エッチングを行い、前記第1ゲート電極、前記第2ゲート電極および前記電極板の両サイドにスペーサを形成する手順8と、
パターン化された前記第1金属層および前記スペーサをカバー層とし、パターン化された前記ポリシリコン部にN型重ドープすることによって、前記第1ゲート電極の両側にある前記スペーサの下には対称の前記N型軽ドープドレイン電極領域を形成するとともに、前記N型軽ドープドレイン電極領域の外側にN型重ドープ領域を形成する手順9と、
堆積とフォトリソグラフィープロセスによって、前記ゲート電極絶縁層上に順番に、層間絶縁層と、第1のソース/ドレイン電極と、第2のソース/ドレイン電極と、平坦層と、陽極と、画素定義層と、フォトレジストギャップと、を形成する手順10と、からなり、
前記第3ポリシリコン部は、前記第1ポリシリコン部と前記第2ポリシリコン部の間に位置し、
前記第1ゲート電極は、前記第1ポリシリコン部の中部の上方に位置し、
前記第1ゲート電極両側に位置する前記スペーサは対称であり、
前記第1のソース/ドレイン電極は、前記第1ポリシリコン部の前記N型重ドープ領域に電気接続され、前記第2のソース/ドレイン電極は、前記第2ポリシリコン部の前記P型重ドープ領域に電気接続され、前記陽極は、前記第2のソース/ドレイン電極に電気接続され、
前記第1ポリシリコン部、前記第1ゲート電極、前記第1のソース/ドレイン電極は、スイッチTFTを構成し、
前記第2ポリシリコン部、前記第2ゲート電極、前記第2のソース/ドレイン電極は、駆動TFTを構成し、
前記第3ポリシリコン部と前記電極板は、保存コンデンサを構成し、
前記手順5のP型重ドープの濃度は前記手順9のN型重ドープの濃度よりも高い
ことを特徴とする。
前記絶縁層は、酸化シリコン層または窒化シリコン層である
ことが好ましい。
前記絶縁層の厚さは、0.2〜0.5umである
ことが好ましい。
前記バッファ層は、酸化シリコン層、窒化シリコン層、または2つの組み合わせである
ことが好ましい。
前記層間絶縁層は、酸化シリコン層、窒化シリコン層、または2つの組み合わせである
ことが好ましい。
前記第1ゲート電極、前記第2ゲート電極および前記電極板の材料は、Moである
ことが好ましい。
前記第1のソース/ドレイン電極と前記第2のソース/ドレイン電極の材料は、Ti/Al/Tiである
ことが好ましい。
前記陽極の材料は、ITO/Ag/ITOである
ことが好ましい。
200 2 バッファ層
301 31 第1ポリシリコン部
303 33 第2ポリシリコン部
305 35 第3ポリシリコン部
400 4 ゲート電極絶縁層
5 フォトレジストパターン
601 61 第1ゲート電極
605 63 第2ゲート電極
603 65 電極板
700 7 層間絶縁層
71 スペーサ
8 層間絶縁層
810 91 第1のソース/ドレイン電極
830 93 第2のソース/ドレイン電極
900 10 平坦層
1000 11 陽極
1100 12 画素定義層
1200 13 フォトレジストギャップ
P+ P型重ドープ領域
N− N型軽ドープ領域
N+ N型重ドープ領域
Claims (8)
- 基板を提供し、前記基板にバッファ層を堆積する手順1と、
バッファ層にアモルファスシリコン層を堆積するとともに、アモルファスシリコン層にエキシマレーザーアニール処理を施し、アモルファスシリコンを結晶化し、ポリシリコン層に変え、ポリシリコン層にパターン化処理を施し、互いに間隔のあいた第1ポリシリコン部と、第2ポリシリコン部と、第3ポリシリコン部と、を形成する手順2と、
前記バッファ層、前記第1ポリシリコン部、前記第2ポリシリコン部および前記第3ポリシリコン部の上にゲート電極絶縁層を堆積する手順3と、
フォトリソグラフィープロセスによって、前記ゲート電極絶縁層上にフォトレジストパターンを形成し、前記フォトレジストパターンは、完全に前記第1ポリシリコン部をカバーし、前記第2ポリシリコン部の中部をカバーし、前記第3ポリシリコン部は全くカバーしない手順4と、
前記フォトレジストパターンをカバー層とし、パターン化された前記ポリシリコン層にP型重ドープし、前記第2ポリシリコン部の両側と前記第3ポリシリコン部の全体において、P型重ドープ領域を形成する手順5と、
前記フォトレジストパターンを削除し、前記ゲート電極絶縁層上に第1金属層を堆積するとともにパターン化し、前記第1ポリシリコン部に対向する第1ゲート電極と、前記第2ポリシリコン部に対向する第2ゲート電極と、前記第3ポリシリコン部に対向する電極板と、を形成し、平面視したときに前記電極板は前記第3ポリシリコン部の全体を覆うように形成する手順6と、
パターン化された前記第1金属層をカバー層とし、パターン化されたポリシリコン部にN型軽ドープすることによって、前記第1ゲート電極にカバーされていない前記第1ポリシリコン部の両側にN型軽ドープ領域を形成する手順7と、
前記ゲート電極絶縁層、前記第1ゲート電極、前記第2ゲート電極および前記電極板上に絶縁層を堆積し、さらに前記絶縁層に異方性エッチングを行い、前記第1ゲート電極、前記第2ゲート電極および前記電極板の両サイドにスペーサを形成する手順8と、
パターン化された前記第1金属層および前記スペーサをカバー層とし、パターン化された前記ポリシリコン部にN型重ドープすることによって、前記第1ゲート電極の両側にある前記スペーサの下には対称の前記N型軽ドープドレイン電極領域を形成するとともに、前記N型軽ドープドレイン電極領域の外側にN型重ドープ領域を形成する手順9と、
堆積とフォトリソグラフィープロセスによって、前記ゲート電極絶縁層上に順番に、層間絶縁層と、第1のソース/ドレイン電極と、第2のソース/ドレイン電極と、平坦層と、陽極と、画素定義層と、フォトレジストギャップと、を形成する手順10と、からなり、
前記第3ポリシリコン部は、前記第1ポリシリコン部と前記第2ポリシリコン部の間に位置し、
前記第1ゲート電極は、前記第1ポリシリコン部の中部の上方に位置し、
前記第1ゲート電極両側に位置する前記スペーサは対称であり、
前記第1のソース/ドレイン電極は、前記第1ポリシリコン部の前記N型重ドープ領域に電気接続され、前記第2のソース/ドレイン電極は、前記第2ポリシリコン部の前記P型重ドープ領域に電気接続され、前記陽極は、前記第2のソース/ドレイン電極に電気接続され、
前記第1ポリシリコン部、前記第1ゲート電極、前記第1のソース/ドレイン電極は、スイッチTFTを構成し、
前記第2ポリシリコン部、前記第2ゲート電極、前記第2のソース/ドレイン電極は、駆動TFTを構成し、
前記第3ポリシリコン部と前記電極板は、保存コンデンサを構成し、
前記手順5のP型重ドープの濃度は前記手順9のN型重ドープの濃度よりも高い
ことを特徴とするAMOLEDバックパネルの製造方法。 - 請求項1に記載のAMOLEDバックパネルの製造方法において、
前記絶縁層は、酸化シリコン層または窒化シリコン層である
ことを特徴とするAMOLEDバックパネルの製造方法。 - 請求項1に記載のAMOLEDバックパネルの製造方法において、
前記絶縁層の厚さは、0.2〜0.5umである
ことを特徴とするAMOLEDバックパネルの製造方法。 - 請求項1に記載のAMOLEDバックパネルの製造方法において、
前記バッファ層は、酸化シリコン層、窒化シリコン層、または2つの組み合わせである
ことを特徴とするAMOLEDバックパネルの製造方法。 - 請求項1に記載のAMOLEDバックパネルの製造方法において、
前記層間絶縁層は、酸化シリコン層、窒化シリコン層、または2つの組み合わせである
ことを特徴とするAMOLEDバックパネルの製造方法。 - 請求項1に記載のAMOLEDバックパネルの製造方法において、
前記第1ゲート電極、前記第2ゲート電極および前記電極板の材料は、Moである
ことを特徴とするAMOLEDバックパネルの製造方法。 - 請求項1に記載のAMOLEDバックパネルの製造方法において、
前記第1のソース/ドレイン電極と前記第2のソース/ドレイン電極の材料は、Ti/Al/Tiである
ことを特徴とするAMOLEDバックパネルの製造方法。 - 請求項1に記載のAMOLEDバックパネルの製造方法において、
前記陽極の材料は、ITO/Ag/ITOである
ことを特徴とするAMOLEDバックパネルの製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410614402.0A CN104465702B (zh) | 2014-11-03 | 2014-11-03 | Amoled背板的制作方法 |
CN201410614402.0 | 2014-11-03 | ||
PCT/CN2015/072350 WO2016070505A1 (zh) | 2014-11-03 | 2015-02-06 | Amoled背板的制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018502442A JP2018502442A (ja) | 2018-01-25 |
JP6460582B2 true JP6460582B2 (ja) | 2019-01-30 |
Family
ID=52911478
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017522825A Active JP6460582B2 (ja) | 2014-11-03 | 2015-02-06 | Amoledバックパネルの製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9553169B2 (ja) |
JP (1) | JP6460582B2 (ja) |
KR (1) | KR101944644B1 (ja) |
CN (1) | CN104465702B (ja) |
GB (1) | GB2545360B (ja) |
WO (1) | WO2016070505A1 (ja) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104966718B (zh) * | 2015-05-04 | 2017-12-29 | 深圳市华星光电技术有限公司 | Amoled背板的制作方法及其结构 |
CN104952884B (zh) * | 2015-05-13 | 2019-11-26 | 深圳市华星光电技术有限公司 | Amoled背板结构及其制作方法 |
CN105097841B (zh) * | 2015-08-04 | 2018-11-23 | 深圳市华星光电技术有限公司 | Tft基板的制作方法及tft基板 |
CN105355588B (zh) | 2015-09-30 | 2018-06-12 | 深圳市华星光电技术有限公司 | Tft阵列基板的制备方法、tft阵列基板及显示装置 |
CN105575974B (zh) * | 2015-12-14 | 2018-08-14 | 深圳市华星光电技术有限公司 | 低温多晶硅tft背板的制作方法 |
KR20170143082A (ko) * | 2016-06-17 | 2017-12-29 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법 |
CN107968124A (zh) * | 2016-10-18 | 2018-04-27 | 上海和辉光电有限公司 | 一种半导体器件结构及其制备方法 |
CN106601778B (zh) * | 2016-12-29 | 2019-12-24 | 深圳市华星光电技术有限公司 | Oled背板及其制作方法 |
WO2019009872A1 (en) * | 2017-07-01 | 2019-01-10 | Intel Corporation | SELF-ALIGNED THIN-FILTER TRANSISTOR WITH UPPER CONTACT AND REAR GRID |
CN107706209B (zh) * | 2017-08-09 | 2019-06-25 | 武汉华星光电半导体显示技术有限公司 | 有机电致发光显示面板及其制作方法 |
CN109427243A (zh) * | 2017-08-22 | 2019-03-05 | 上海和辉光电有限公司 | 一种显示面板、装置及制作方法 |
KR102603872B1 (ko) * | 2018-04-20 | 2023-11-21 | 삼성디스플레이 주식회사 | 디스플레이 장치 및 그 제조방법 |
US10679851B2 (en) * | 2018-07-25 | 2020-06-09 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Poly-silicon thin film and preparation method of thin film transistor |
CN109003896B (zh) * | 2018-08-01 | 2021-03-26 | 京东方科技集团股份有限公司 | 掺杂多晶硅的制作方法及其应用 |
CN109742121B (zh) | 2019-01-10 | 2023-11-24 | 京东方科技集团股份有限公司 | 一种柔性基板及其制备方法、显示装置 |
CN110164870A (zh) * | 2019-05-14 | 2019-08-23 | 深圳市华星光电半导体显示技术有限公司 | 含电容背板构造 |
CN110649060B (zh) * | 2019-11-01 | 2022-04-26 | 京东方科技集团股份有限公司 | 微发光二极管芯片及制作方法、显示面板制作方法 |
CN110911466B (zh) * | 2019-11-29 | 2022-08-19 | 京东方科技集团股份有限公司 | 一种基板及其制备方法、母板的制备方法、掩膜版和蒸镀装置 |
CN112366180A (zh) * | 2020-11-09 | 2021-02-12 | 浙江清华柔性电子技术研究院 | Led封装方法及led封装装置 |
CN113113354B (zh) * | 2021-03-18 | 2022-04-08 | 武汉华星光电技术有限公司 | 光学器件及其制备方法、显示面板 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6093594A (en) * | 1998-04-29 | 2000-07-25 | Advanced Micro Devices, Inc. | CMOS optimization method utilizing sacrificial sidewall spacer |
KR100289750B1 (ko) * | 1998-05-07 | 2001-05-15 | 윤종용 | 자기정렬콘택홀을가지는반도체장치의제조방법 |
JP4558121B2 (ja) * | 1999-01-11 | 2010-10-06 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
JP4549475B2 (ja) * | 1999-02-12 | 2010-09-22 | 株式会社半導体エネルギー研究所 | 半導体装置、電子機器、および半導体装置の作製方法 |
KR100301148B1 (ko) * | 1999-06-29 | 2001-11-01 | 박종섭 | 반도체 소자의 하드 마스크 형성방법 |
KR100437473B1 (ko) * | 2001-03-02 | 2004-06-23 | 삼성에스디아이 주식회사 | 엘디디 구조를 갖는 씨모스 박막 트랜지스터 및 그의제조방법 |
KR100590264B1 (ko) * | 2001-03-02 | 2006-06-15 | 삼성에스디아이 주식회사 | 오프셋영역을 갖는 씨모스 박막 트랜지스터 및 그의제조방법 |
TW494580B (en) * | 2001-04-30 | 2002-07-11 | Hannstar Display Corp | Manufacturing method of thin film transistor and its driving devices |
KR100438523B1 (ko) * | 2001-10-08 | 2004-07-03 | 엘지.필립스 엘시디 주식회사 | 박막트랜지스터 및 그 제조방법 |
TWI270177B (en) * | 2002-10-25 | 2007-01-01 | Tpo Displays Corp | Semiconductor device with lightly doped drain and manufacturing method thereof |
CN1255872C (zh) * | 2002-11-08 | 2006-05-10 | 统宝光电股份有限公司 | 具轻掺杂漏极的半导体组件的形成方法 |
KR101026808B1 (ko) * | 2004-04-30 | 2011-04-04 | 삼성전자주식회사 | 박막 트랜지스터 표시판의 제조 방법 |
TWI292281B (en) * | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
CN100499610C (zh) | 2006-04-14 | 2009-06-10 | 中国人民解放军理工大学 | 一种基于正交序列设计的低复杂度信道估计方法 |
TWI389211B (zh) * | 2008-04-30 | 2013-03-11 | Chimei Innolux Corp | 影像顯示系統及其製造方法 |
CN101276790A (zh) * | 2008-05-21 | 2008-10-01 | 友达光电股份有限公司 | 薄膜晶体管阵列基板与液晶显示面板的制作方法 |
TWI402982B (zh) | 2009-03-02 | 2013-07-21 | Innolux Corp | 影像顯示系統及其製造方法 |
JP5706670B2 (ja) * | 2009-11-24 | 2015-04-22 | 株式会社半導体エネルギー研究所 | Soi基板の作製方法 |
KR101108160B1 (ko) * | 2009-12-10 | 2012-01-31 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
US9065077B2 (en) * | 2012-06-15 | 2015-06-23 | Apple, Inc. | Back channel etch metal-oxide thin film transistor and process |
CN103390592B (zh) * | 2013-07-17 | 2016-02-24 | 京东方科技集团股份有限公司 | 阵列基板制备方法、阵列基板以及显示装置 |
CN103456765B (zh) * | 2013-09-10 | 2015-09-16 | 深圳市华星光电技术有限公司 | 有源式有机电致发光器件背板及其制作方法 |
CN103500756A (zh) * | 2013-10-22 | 2014-01-08 | 深圳市华星光电技术有限公司 | 有机电致发光器件及其制作方法 |
CN104143533B (zh) * | 2014-08-07 | 2017-06-27 | 深圳市华星光电技术有限公司 | 高解析度amoled背板制造方法 |
-
2014
- 2014-11-03 CN CN201410614402.0A patent/CN104465702B/zh active Active
-
2015
- 2015-02-06 US US14/424,107 patent/US9553169B2/en active Active
- 2015-02-06 JP JP2017522825A patent/JP6460582B2/ja active Active
- 2015-02-06 GB GB1703514.8A patent/GB2545360B/en active Active
- 2015-02-06 WO PCT/CN2015/072350 patent/WO2016070505A1/zh active Application Filing
- 2015-02-06 KR KR1020177007166A patent/KR101944644B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
JP2018502442A (ja) | 2018-01-25 |
US20160343828A1 (en) | 2016-11-24 |
GB2545360B (en) | 2019-12-18 |
CN104465702A (zh) | 2015-03-25 |
CN104465702B (zh) | 2019-12-10 |
KR101944644B1 (ko) | 2019-01-31 |
WO2016070505A1 (zh) | 2016-05-12 |
GB2545360A (en) | 2017-06-14 |
GB201703514D0 (en) | 2017-04-19 |
KR20170042719A (ko) | 2017-04-19 |
US9553169B2 (en) | 2017-01-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6460582B2 (ja) | Amoledバックパネルの製造方法 | |
WO2016176893A1 (zh) | Amoled背板的制作方法及其结构 | |
WO2016115793A1 (zh) | 适用于amoled的tft背板制作方法及结构 | |
US9947736B2 (en) | Manufacture method of AMOLED back plate and structure thereof | |
WO2017054271A1 (zh) | 低温多晶硅tft基板 | |
CN103077957B (zh) | 主动矩阵式有机发光二极管显示装置及其制作方法 | |
US9543442B2 (en) | Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereof | |
US20160370621A1 (en) | Array substrate, manufacturing method thereof and liquid crystal display | |
WO2016176881A1 (zh) | 双栅极tft基板的制作方法及其结构 | |
JP6405036B2 (ja) | 高解像度を有するamoledバックプレートの製造方法 | |
WO2016176879A1 (zh) | Amoled背板的制作方法及其结构 | |
US10615282B2 (en) | Thin-film transistor and manufacturing method thereof, array substrate, and display apparatus | |
WO2015096292A1 (zh) | 阵列基板及其制造方法、显示装置 | |
WO2017118158A1 (zh) | 薄膜晶体管、阵列基板及其制造方法、和显示装置 | |
JP6239606B2 (ja) | 薄膜トランジスタ、アレイ基板及びその製造方法 | |
US9876040B1 (en) | Method for manufacturing TFT substrate | |
US9735186B2 (en) | Manufacturing method and structure thereof of TFT backplane | |
US20170352711A1 (en) | Manufacturing method of tft backplane and tft backplane | |
US20140103343A1 (en) | Pixel drive circuit and preparation method therefor, and array substrate | |
WO2015192417A1 (zh) | Tft背板的制造方法及tft背板结构 | |
WO2015161523A1 (zh) | 薄膜晶体管及有机发光二极管显示器制备方法 | |
US20150279863A1 (en) | Method for Manufacturing Array Substrate | |
JP6560760B2 (ja) | 共平面型酸化物半導体tft基板構造及びその製作方法 | |
KR101760946B1 (ko) | 박막트랜지스터 어레이기판 제조방법 | |
WO2019019268A1 (zh) | 低温多晶硅薄膜晶体管及其制作方法、有机发光显示器 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180709 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180720 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180919 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20181210 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20181223 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6460582 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |