JP2018502442A - Amoledバックパネルの製造方法 - Google Patents
Amoledバックパネルの製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- 229920001621 AMOLED Polymers 0.000 title claims abstract 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 154
- 229920005591 polysilicon Polymers 0.000 claims abstract description 153
- 238000000034 method Methods 0.000 claims abstract description 67
- 230000000903 blocking effect Effects 0.000 claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 33
- 238000005530 etching Methods 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 claims description 233
- 229920002120 photoresistant polymer Polymers 0.000 claims description 34
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 16
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 13
- 239000011229 interlayer Substances 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 claims description 6
- 239000003990 capacitor Substances 0.000 claims description 6
- 238000003860 storage Methods 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 4
- 238000005224 laser annealing Methods 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims 1
- 239000010936 titanium Substances 0.000 description 6
- 229910004205 SiNX Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical group [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000036632 reaction speed Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910001923 silver oxide Inorganic materials 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
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Abstract
Description
そのうち、OLEDは、自発光、駆動電圧が低い、発光効率が高い、反応速度が速い、解像度とコントラストが高い、180度に近い視角、使用温度の範囲が広い、フレキシブルディスプレイと大面積全色表示を実現できる等の多くの長所があり、業界において最も発展の可能性がある表示装置であるとみなされている。
200 2 バッファ層
301 31 第1ポリシリコン部
303 33 第2ポリシリコン部
305 35 第3ポリシリコン部
400 4 グリッド電極絶縁層
5 フォトレジストパターン
601 61 第1グリッド電極
605 63 第2グリッド電極
603 65 電極板
700 7 層間絶縁層
71 阻隔部
8 層間絶縁層
810 91 第1源/ドレイン電極
830 93 第2源/ドレイン電極
900 10 平坦層
1000 11 陽極
1100 12 画素定義層
1200 13 フォトレジストギャップ
P+ P型重ドープ領域
N− N型軽ドープ領域
N+ N型重ドープ領域
Claims (11)
- 基板にバッファ層とアモルファスシリコン層を順番に堆積し、アモルファスシリコンを結晶化し、ポリシリコン層に変えるとともに、パターン化されたポリシリコン層に変え、グリッド電極絶縁層を堆積した後、黄光プロセスによって製造されたフォトレジストパターンをカバー層とし、パターン化されたポリシリコン層にP型重ドープし、さらにグリッド電極絶縁層に第1金属層を堆積するとともにパターン化し、グリッド電極を形成し、パターン化された第1金属層をカバー層とし、パターン化されたポリシリコン部にN型軽ドープし、絶縁層を堆積し、前記絶縁層に異方性エッチングを行い、阻隔部を形成し、さらにパターン化された第1金属層と阻隔部をカバー層とし、パターン化されたポリシリコン層にN型重ドープし、対称な軽ドープドレイン電極領域を形成することを特徴とする、AMOLEDバックパネルの製造方法。
- 基板を提供し、前記基板にバッファ層を堆積する手順1と、
バッファ層にアモルファスシリコン層を堆積するとともに、アモルファスシリコン層にエキシマレーザーアニール処理を施し、アモルファスシリコンを結晶化し、ポリシリコン層に変え、ポリシリコン層にパターン化処理を施し、互いに間隔のあいた第1ポリシリコン部と、第2ポリシリコン部と、第3ポリシリコン部を形成する手順2と、
前記バッファ層、第1ポリシリコン部、第2ポリシリコン部、第3ポリシリコン部にグリッド電極絶縁層を堆積する手順3と、
黄光プロセスによって、グリッド電極絶縁層にフォトレジストパターンを形成し、前記フォトレジストパターンは、完全に第1ポリシリコン部をカバーし、第2ポリシリコン部の中部をカバーし、第3ポリシリコン部は全くカバーしない手順4と、
前記フォトレジストパターンをカバー層とし、パターン化されたポリシリコン層にP型重ドープし、第2ポリシリコン部の両側と第3ポリシリコン部において、P型重ドープ領域を形成する手順5と、
前記フォトレジストパターンを削除し、グリッド電極絶縁層に第1金属層を堆積するとともにパターン化し、第1グリッド電極と、第2グリッド電極と、電極板を形成する手順6と、
パターン化された第1金属層をカバー層とし、パターン化されたポリシリコン部にN型軽ドープすることによって、第1グリッド電極にカバーされていない第1ポリシリコン部の両側にN型軽ドープ領域を形成する手順7と、
前記グリッド電極絶縁層と第1グリッド電極、第2グリッド電極、電極板に絶縁層を堆積し、さらに絶縁層に異方性エッチングを行い、阻隔部を形成する手順8と、
パターン化された第1金属層と阻隔部をカバー層とし、パターン化されたポリシリコン部にN型重ドープすることによって、第1グリッド電極の両側にある阻隔部の下に対称の軽ドープドレイン電極領域を形成する手順9と、
堆積、黄光、エッチングプロセスによって、グリッド電極絶縁層に順番に、層間絶縁層と、第1源/ドレイン電極と、第2源/ドレイン電極と、平坦層と、陽極と、画素定義層と、フォトレジストギャップを形成する手順10と、からなり、
前記第3ポリシリコン部は、第1ポリシリコン部と第2ポリシリコン部の間に位置し、
前記第1グリッド電極は、第1ポリシリコン部中部の上方に位置し、
前記第1グリッド電極両側に位置する阻隔部は対称であり、
前記第1源/ドレイン電極は、第1ポリシリコン部のN型重ドープ領域に電気接続され、前記第2源/ドレイン電極は、第2ポリシリコン部のP型重ドープ領域に電気接続され、前記陽極は、第2源/ドレイン電極に電気接続され、
前記第1ポリシリコン部、第1グリッド電極、第1源/ドレイン電極は、スイッチTFTを構成し、前記第2ポリシリコン部、第2グリッド電極、第2源/ドレイン電極は、駆動TFTを構成し、前記第3ポリシリコン部と電極版は、保存コンデンサを構成する
ことを特徴とする、請求項1に記載のAMOLEDバックパネルの製造方法。 - 前記絶縁層は、酸化シリコン層または窒化シリコン層である
ことを特徴とする、請求項2に記載のAMOLEDバックパネルの製造方法。 - 前記絶縁層の厚度は、0.2〜0.5umである
ことを特徴とする、請求項2に記載のAMOLEDバックパネルの製造方法。 - 前記P型重ドープの濃度は、N型重ドープの濃度より高い
ことを特徴とする、請求項2に記載のAMOLEDバックパネルの製造方法。 - 前記バッファ層は、酸化シリコン層、窒化シリコン層、または2つの組み合わせである
ことを特徴とする、請求項2に記載のAMOLEDバックパネルの製造方法。 - 前記層間絶縁層は、酸化シリコン層、窒化シリコン層、または2つの組み合わせである
ことを特徴とする、請求項2に記載のAMOLEDバックパネルの製造方法。 - 前記第1グリッド電極、第2グリッド電極、電極版の材料は、Moである
ことを特徴とする、請求項2に記載のAMOLEDバックパネルの製造方法。 - 前記第1源/ドレイン電極と第2源/ドレイン電極の材料は、Ti/Al/Tiである
ことを特徴とする、請求項2に記載のAMOLEDバックパネルの製造方法。 - 前記陽極の材料は、ITO/Ag/ITOである
ことを特徴とする、請求項2に記載のAMOLEDバックパネルの製造方法。 - 基板にバッファ層とアモルファスシリコン層を順番に堆積し、アモルファスシリコンを結晶化し、ポリシリコン層に変えるとともに、パターン化されたポリシリコン層に変え、グリッド電極絶縁層を堆積した後、黄光プロセスによって製造されたフォトレジストパターンをカバー層とし、パターン化されたポリシリコン層にP型重ドープし、さらにグリッド電極絶縁層に第1金属層を堆積するとともにパターン化し、グリッド電極を形成し、パターン化された第1金属層をカバー層とし、パターン化されたポリシリコン部にN型軽ドープし、絶縁層を堆積し、前記絶縁層に異方性エッチングを行い、阻隔部を形成し、さらにパターン化された第1金属層と阻隔部をカバー層とし、パターン化されたポリシリコン層にN型重ドープし、対称な軽ドープドレイン電極領域を形成する、AMOLEDバックパネルの製造方法であって、
前記AMOLEDバックパネルの製造方法は、
基板を提供し、前記基板にバッファ層を堆積する手順1と、
バッファ層にアモルファスシリコン層を堆積するとともに、アモルファスシリコン層にエキシマレーザーアニール処理を施し、アモルファスシリコンを結晶化し、ポリシリコン層に変え、ポリシリコン層にパターン化処理を施し、互いに間隔のあいた第1ポリシリコン部と、第2ポリシリコン部と、第3ポリシリコン部を形成する手順2と、
前記バッファ層、第1ポリシリコン部、第2ポリシリコン部、第3ポリシリコン部にグリッド電極絶縁層を堆積する手順3と、
黄光プロセスによって、グリッド電極絶縁層にフォトレジストパターンを形成し、前記フォトレジストパターンは、完全に第1ポリシリコン部をカバーし、第2ポリシリコン部の中部をカバーし、第3ポリシリコン部は全くカバーしない手順4と、
前記フォトレジストパターンをカバー層とし、パターン化されたポリシリコン層にP型重ドープし、第2ポリシリコン部の両側と第3ポリシリコン部において、P型重ドープ領域を形成する手順5と、
前記フォトレジストパターンを削除し、グリッド電極絶縁層に第1金属層を堆積するとともにパターン化し、第1グリッド電極と、第2グリッド電極と、電極板を形成する手順6と、
パターン化された第1金属層をカバー層とし、パターン化されたポリシリコン部にN型軽ドープすることによって、第1グリッド電極にカバーされていない第1ポリシリコン部の両側にN型軽ドープ領域を形成する手順7と、
前記グリッド電極絶縁層と第1グリッド電極、第2グリッド電極、電極板に絶縁層を堆積し、さらに絶縁層に異方性エッチングを行い、阻隔部を形成する手順8と、
パターン化された第1金属層と阻隔部をカバー層とし、パターン化されたポリシリコン部にN型重ドープすることによって、第1グリッド電極の両側にある阻隔部の下に対称の軽ドープドレイン電極領域を形成する手順9と、
堆積、黄光、エッチングプロセスによって、グリッド電極絶縁層に順番に、層間絶縁層と、第1源/ドレイン電極と、第2源/ドレイン電極と、平坦層と、陽極と、画素定義層と、フォトレジストギャップを形成する手順10と、からなり、
前記第3ポリシリコン部は、第1ポリシリコン部と第2ポリシリコン部の間に位置し、
前記第1グリッド電極は、第1ポリシリコン部中部の上方に位置し、
前記第1グリッド電極両側に位置する阻隔部は対称であり、
前記第1源/ドレイン電極は、第1ポリシリコン部のN型重ドープ領域に電気接続され、前記第2源/ドレイン電極は、第2ポリシリコン部のP型重ドープ領域に電気接続され、前記陽極は、第2源/ドレイン電極に電気接続され、
前記第1ポリシリコン部、第1グリッド電極、第1源/ドレイン電極は、スイッチTFTを構成し、前記第2ポリシリコン部、第2グリッド電極、第2源/ドレイン電極は、駆動TFTを構成し、前記第3ポリシリコン部と電極版は、保存コンデンサを構成し、
そのうち、前記絶縁層は、酸化シリコン層または窒化シリコン層であり、
そのうち、前記P型重ドープの濃度は、N型重ドープの濃度より高く、
前記バッファ層は、酸化シリコン層、窒化シリコン層、または2つの組み合わせである
ことを特徴とする、AMOLEDバックパネルの製造方法。
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