JP6421050B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP6421050B2 JP6421050B2 JP2015023153A JP2015023153A JP6421050B2 JP 6421050 B2 JP6421050 B2 JP 6421050B2 JP 2015023153 A JP2015023153 A JP 2015023153A JP 2015023153 A JP2015023153 A JP 2015023153A JP 6421050 B2 JP6421050 B2 JP 6421050B2
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- Prior art keywords
- substrate
- semiconductor device
- heat sink
- semiconductor chip
- groove
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- 239000004065 semiconductor Substances 0.000 title claims description 141
- 239000000758 substrate Substances 0.000 claims description 103
- 239000000463 material Substances 0.000 claims description 13
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 230000035882 stress Effects 0.000 description 17
- 239000002241 glass-ceramic Substances 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 12
- 239000010949 copper Substances 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 230000017525 heat dissipation Effects 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 238000004088 simulation Methods 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 238000012790 confirmation Methods 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Classifications
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Description
図1乃至図3を用いて、実施形態1に係る半導体装置の構成を説明する。
図1は、本発明の第1実施形態に係る半導体装置100の全体構成を示す概略図である。半導体装置100は、基板10上に半導体チップ30が配置され、基板10及び半導体チップ30上に放熱板20が配置される。基板10と放熱板20は対向して配置され、両者の面積は概ね一致しており、半導体装置100は略立方体の形状を有する。
図2は、本発明の第1実施形態に係る半導体装置100において、図1のI−I’線における断面図を示したものである。
図3は、本発明の第1実施形態に係る半導体装置の放熱板20の、平面図(A)と断面図(B)を示したものである。点線で囲んだ矩形の領域30’は、放熱板20と半導体チップ30(図示せず)が接着される位置を示している。半導体チップ30が接着される領域を囲むように、矩形状に突起部22が配置される。さらに、放熱板20の外周部には、基板10(図示せず)と接着し固定される固定部28が配置される。第1実施形態では、半導体チップ30が接着される領域と、突起部22が形成される部分との間に、溝24(薄肉部26)が配置される。溝24(薄肉部26)も突起部22と同様に、半導体チップ30の接着領域を囲むように矩形状に形成される。
半導体装置100を構成する基板10と半導体チップ30は、それぞれ有機基板とシリコンを主な材料としている。基板10の熱膨張係数は約15ppmであり、半導体チップ30の熱膨張係数は約3.4ppmである。このように、基板10の熱膨張係数の値は半導体チップ30の熱膨張係数の値よりも大きい。このため、温度サイクル試験の低温時(例えば−55℃)には、基板10の収縮量が大きいため、半導体装置100は全体的に上面(図2の上側。放熱板20が配置されている面)に向かって凸反りとなる。ここで、基板10と放熱板20とは、外周付近で接着剤41と強固に接着し固定されている。また、放熱板20と半導体チップ30とは、熱界面材料47によって強固に接着し固定されている。このように、放熱板20と基板10及び半導体チップ30は強固に接着され固定されているので、温度サイクル試験の低温時に、放熱板20には反り方向に応力が加わる。
本発明の第2実施形態に係る半導体装置の概要について、図4を参照しながら説明する。
本発明の第3実施形態に係る半導体装置の概要について、図5を参照しながら説明する。
本発明の第4実施形態に係る半導体装置の概要について、図6を参照しながら説明する。
本発明の第5実施形態に係る半導体装置の概要について、図7を参照しながら説明する。
以上、本発明の第1実施形態乃至第5実施形態を図1乃至図7を参照しつつ説明したが、本発明は上記の実施形態に限られたものではない。本発明は、上述した各実施形態を、要旨を逸脱しない範囲で適宜変更し、あるいは各実施形態を組み合わせることによって、実施することが可能である。
以下、実施例に係る半導体装置と、比較例に係る半導体装置について、応力シミュレーションの結果を示す。
図8は、比較例に係る半導体装置700の断面図を示したものである。半導体装置700は、ガラスセラミック基板710を有する。ガラスセラミック基板は、信号の伝送損が小さいので、高速デバイスの半導体パッケージによく採用される。ガラスセラミック基板710上に半導体チップ730がフリップチップ接続され、半導体チップ730の上面に熱界面材料747を介して蓋上の放熱板720が接着される。放熱板720はガラスセラミック基板710の外周部で接着し固定される。
図10は、本発明の一実施例に係る半導体装置の断面図を示したものである。図10で示す半導体装置は、第1実施形態で説明した半導体装置と同様の構造を有している。ここでは、放熱板20を正方形として、一辺の長さaを26.5mmとし、厚さbを0.5mm、溝24の幅cを4mm、溝24の深さdを0.3mm、突起部22の長さeを0.3mm、突起部22の平面方向の厚さfを0.5mm、固定部28の長さgを0.7mm、固定部28の平面方向の厚さhを2mm、半導体チップ30を挟んだ2つの突起部22の間隔iを16mmとした。また、半導体チップ30は正方形として、一辺の長さjは11mmとし、正方形の基板10及び放熱板20の中央に配置した。また、基板10の一辺の長さkは27mmとし、厚さmは0.99mmとした。なお、薄肉部26の幅は4mm、厚さは0.3mmとなる。
次に、上記シミュレーションにおいて設定した寸法と同じ構造を有する、実施例に係る半導体装置と比較例に係る半導体装置について、温度サイクル試験(−55℃〜125℃)を行った実験結果を表2に示す。表2の数値は、温度サイクル試験に投入した半導体装置の数を分母とし、半導体装置の導通確認がNGだったものを分子としている。なお、半導体装置の導通確認がNGとなることは、放熱板20の突起部22と、基板10との接着部分の一部又は全部が剥離することが原因と考えられる。
20:放熱板
22:突起部
24、24a、24b、24e:溝
24c:穴
24d:貫通孔
26:薄肉部
28:固定部
30:半導体チップ
41:接着剤
43:導電性接着剤
45:アンダーフィル
47:熱界面材料
49:バンプ
100:半導体装置
Claims (5)
- 表面が絶縁材料の基板と、
前記基板上にフリップチップ接続された半導体チップと、
熱界面材料を介して前記半導体チップに接着され、前記基板に前記半導体チップの外側で固定された放熱板とを有し、
前記放熱板は、前記半導体チップと接着した部分と前記基板と固定した部分との間に、前記基板に向かって突出し、前記半導体チップの周囲に設けられ、導電性樹脂により前記基板に接着される突起部を有し、
前記放熱板は、前記突起部の内側又は外側に配置される薄肉部を有する
ことを特徴とする半導体装置。 - 前記薄肉部は、前記放熱板の前記基板側の面に設けられた凹溝で薄肉化されていることを特徴とする、請求項1に記載の半導体装置。
- 前記薄肉部は、前記凹溝を2つ以上含むことを特徴とする、請求項2に記載の半導体装置。
- 前記薄肉部は、前記放熱板の前記基板側の面に設けられた有底孔又は貫通孔を含むことを特徴とする、請求項1に記載の半導体装置。
- 前記放熱板は、Cu、Al又はAlSiCuセラミックからなる請求項1に記載の半導体装置。
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CN201610068904.7A CN105870080B (zh) | 2015-02-09 | 2016-02-01 | 半导体装置 |
CN202010330026.8A CN111446217B (zh) | 2015-02-09 | 2016-02-01 | 半导体装置 |
KR1020160012701A KR102490814B1 (ko) | 2015-02-09 | 2016-02-02 | 반도체 장치 |
TW112105352A TW202329358A (zh) | 2015-02-09 | 2016-02-02 | 半導體裝置及製造其之方法 |
TW109133883A TWI795677B (zh) | 2015-02-09 | 2016-02-02 | 半導體裝置及製造其之方法 |
TW105103225A TWI709205B (zh) | 2015-02-09 | 2016-02-02 | 半導體裝置 |
US15/018,563 US20160233141A1 (en) | 2015-02-09 | 2016-02-08 | Semiconductor device |
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Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI555147B (zh) * | 2015-03-20 | 2016-10-21 | 矽品精密工業股份有限公司 | 散熱型封裝結構及其散熱件 |
US10483175B2 (en) * | 2015-12-04 | 2019-11-19 | Mitsubishi Electric Corporation | Power semiconductor device |
US10607963B2 (en) * | 2016-09-15 | 2020-03-31 | International Business Machines Corporation | Chip package for two-phase cooling and assembly process thereof |
JP2018060986A (ja) * | 2016-10-07 | 2018-04-12 | 株式会社ジェイデバイス | 半導体装置 |
US10587044B2 (en) * | 2016-10-24 | 2020-03-10 | Anokiwave, Inc. | Flip-chip beamforming integrated circuit with integral thermal mass |
US20180166356A1 (en) * | 2016-12-13 | 2018-06-14 | Globalfoundries Inc. | Fan-out circuit packaging with integrated lid |
EP3340291A1 (en) * | 2016-12-23 | 2018-06-27 | Infineon Technologies AG | Method for procuding an electronic module assembly and electronic module assembly |
US10224262B2 (en) * | 2017-05-12 | 2019-03-05 | Globalfoundries Inc. | Flexible heat spreader lid |
US10319609B2 (en) | 2017-06-21 | 2019-06-11 | International Business Machines Corporation | Adhesive-bonded thermal interface structures |
JP6867243B2 (ja) * | 2017-06-26 | 2021-04-28 | 新光電気工業株式会社 | 放熱板及びその製造方法と電子部品装置 |
US10002821B1 (en) | 2017-09-29 | 2018-06-19 | Infineon Technologies Ag | Semiconductor chip package comprising semiconductor chip and leadframe disposed between two substrates |
US11257768B2 (en) * | 2017-12-13 | 2022-02-22 | Mitsubishi Electric Corporation | Semiconductor device and power conversion device |
CN109950214A (zh) * | 2017-12-20 | 2019-06-28 | 安世有限公司 | 芯片级封装半导体器件及其制造方法 |
DE102017223619B3 (de) | 2017-12-21 | 2019-05-09 | Robert Bosch Gmbh | Steuergerät für eine elektrische Maschine |
CN110473839A (zh) * | 2018-05-11 | 2019-11-19 | 三星电子株式会社 | 半导体封装*** |
KR102607055B1 (ko) * | 2018-05-11 | 2023-11-30 | 삼성전자주식회사 | 반도체 패키지 시스템 |
US10991638B2 (en) * | 2018-05-14 | 2021-04-27 | Samsung Electronics Co., Ltd. | Semiconductor package system |
KR102607109B1 (ko) * | 2018-05-14 | 2023-11-30 | 삼성전자주식회사 | 반도체 패키지 시스템 |
JP7127498B2 (ja) * | 2018-11-09 | 2022-08-30 | 住友電装株式会社 | 放熱部材及び電気接続箱 |
US20220167526A1 (en) * | 2019-04-12 | 2022-05-26 | Nokia Solutions And Networks Oy | Heat dissipation |
US20210035921A1 (en) * | 2019-07-30 | 2021-02-04 | Intel Corporation | Soldered metallic reservoirs for enhanced transient and steady-state thermal performance |
US11637051B2 (en) * | 2019-10-18 | 2023-04-25 | Qualcomm Incorporated | Integrated device coupled to a step heat sink configured to provide shielding |
CN110798167A (zh) * | 2019-11-25 | 2020-02-14 | 开元通信技术(厦门)有限公司 | 声波器件及其制作方法 |
JP2021099229A (ja) * | 2019-12-20 | 2021-07-01 | ソニーセミコンダクタソリューションズ株式会社 | 電位測定装置 |
US11600548B2 (en) * | 2020-05-29 | 2023-03-07 | Google Llc | Methods and heat distribution devices for thermal management of chip assemblies |
US11876345B2 (en) | 2020-09-08 | 2024-01-16 | Hewlett Packard Enterprise Development Lp | Thermal management for hybrid lasers |
DE102020212532A1 (de) | 2020-10-05 | 2022-04-07 | Robert Bosch Gesellschaft mit beschränkter Haftung | Vorrichtung mit einem Bauelement, einem Kühlkörper und einer wärmeleitenden Schicht |
FR3115653B1 (fr) * | 2020-10-22 | 2022-09-09 | Continental Automotive Gmbh | Elément de boitier électronique comprenant un radiateur et procédé d’ajustement associé |
JP7183354B1 (ja) * | 2021-07-27 | 2022-12-05 | 三菱電機株式会社 | 半導体モジュール |
US20230065147A1 (en) * | 2021-08-30 | 2023-03-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor package and manufacturing method thereof |
GB2611028A (en) * | 2021-09-17 | 2023-03-29 | Aptiv Tech Ltd | A method of fitting a cooling device to a circuit board and a circuit board cooling device |
CN113990809B (zh) * | 2021-12-17 | 2022-04-29 | 中兴通讯股份有限公司 | 封装结构、电路板组件和电子设备 |
DE102022205647A1 (de) * | 2022-06-02 | 2023-12-07 | Continental Autonomous Mobility Germany GmbH | Kühlanordnung, Steuereinrichtung, Kühlkörper sowie Herstellungsverfahren |
Family Cites Families (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59231841A (ja) * | 1983-06-14 | 1984-12-26 | Mitsubishi Electric Corp | 半導体装置 |
JP3419915B2 (ja) * | 1994-11-17 | 2003-06-23 | 株式会社東芝 | リードレスタイプ半導体モジュール |
KR100245971B1 (ko) * | 1995-11-30 | 2000-03-02 | 포만 제프리 엘 | 중합접착제를 금속에 접착시키기 위한 접착력 촉진층을 이용하는 히트싱크어셈블리 및 그 제조방법 |
JPH10125830A (ja) * | 1996-10-24 | 1998-05-15 | Hitachi Ltd | 高周波モジュールおよびその製造方法 |
US6020221A (en) * | 1996-12-12 | 2000-02-01 | Lsi Logic Corporation | Process for manufacturing a semiconductor device having a stiffener member |
US6313521B1 (en) * | 1998-11-04 | 2001-11-06 | Nec Corporation | Semiconductor device and method of manufacturing the same |
JP4420538B2 (ja) * | 1999-07-23 | 2010-02-24 | アバゴ・テクノロジーズ・ワイヤレス・アイピー(シンガポール)プライベート・リミテッド | ウェーハパッケージの製造方法 |
US6472741B1 (en) * | 2001-07-14 | 2002-10-29 | Siliconware Precision Industries Co., Ltd. | Thermally-enhanced stacked-die ball grid array semiconductor package and method of fabricating the same |
KR100446290B1 (ko) * | 2001-11-03 | 2004-09-01 | 삼성전자주식회사 | 댐을 포함하는 반도체 패키지 및 그 제조방법 |
US6504723B1 (en) * | 2001-11-15 | 2003-01-07 | Intel Corporation | Electronic assembly having solder thermal interface between a die substrate and a heat spreader |
US6775140B2 (en) * | 2002-10-21 | 2004-08-10 | St Assembly Test Services Ltd. | Heat spreaders, heat spreader packages, and fabrication methods for use with flip chip semiconductor devices |
TW578284B (en) * | 2002-12-24 | 2004-03-01 | Advanced Semiconductor Eng | Heat separator for chip package and the bonding method thereof |
TWI315094B (en) * | 2003-04-25 | 2009-09-21 | Advanced Semiconductor Eng | Flip chip package |
US6906413B2 (en) * | 2003-05-30 | 2005-06-14 | Honeywell International Inc. | Integrated heat spreader lid |
JP4469563B2 (ja) * | 2003-06-05 | 2010-05-26 | 株式会社ソニー・コンピュータエンタテインメント | 電子機器、電磁波放射抑制部材 |
TWI265608B (en) * | 2003-11-05 | 2006-11-01 | Siliconware Precision Industries Co Ltd | Semiconductor package with heat sink |
TWI246760B (en) * | 2004-12-22 | 2006-01-01 | Siliconware Precision Industries Co Ltd | Heat dissipating semiconductor package and fabrication method thereof |
WO2006080048A1 (ja) * | 2005-01-25 | 2006-08-03 | Fujitsu Limited | 半導体装置 |
US7250576B2 (en) * | 2005-05-19 | 2007-07-31 | International Business Machines Corporation | Chip package having chip extension and method |
US7439617B2 (en) * | 2006-06-30 | 2008-10-21 | Intel Corporation | Capillary underflow integral heat spreader |
US20080128897A1 (en) * | 2006-12-05 | 2008-06-05 | Tong Wa Chao | Heat spreader for a multi-chip package |
JP2008305958A (ja) * | 2007-06-07 | 2008-12-18 | Fujitsu Microelectronics Ltd | 半導体装置 |
CN201111935Y (zh) | 2007-09-12 | 2008-09-10 | 昆山致桥电子商业有限公司 | 一种抽拉式屏幕 |
US9147649B2 (en) * | 2008-01-24 | 2015-09-29 | Infineon Technologies Ag | Multi-chip module |
US7619308B1 (en) * | 2008-05-02 | 2009-11-17 | Sun Microsystems, Inc. | Multi-lid semiconductor package |
US7928562B2 (en) * | 2008-07-22 | 2011-04-19 | International Business Machines Corporation | Segmentation of a die stack for 3D packaging thermal management |
JP5431793B2 (ja) * | 2009-05-29 | 2014-03-05 | 新光電気工業株式会社 | 放熱部品、電子部品装置及び電子部品装置の製造方法 |
US8013438B2 (en) * | 2009-07-21 | 2011-09-06 | Stmicroelectronics Asia Pacific Pte. Ltd. | Semiconductor package with a stiffening member supporting a thermal heat spreader |
JP5733893B2 (ja) * | 2009-12-22 | 2015-06-10 | 新光電気工業株式会社 | 電子部品装置 |
CN201708146U (zh) * | 2010-05-26 | 2011-01-12 | 比亚迪股份有限公司 | 一种散热装置及具有该散热装置的半导体模块 |
JP2012033559A (ja) * | 2010-07-28 | 2012-02-16 | J Devices:Kk | 半導体装置 |
US8976529B2 (en) * | 2011-01-14 | 2015-03-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lid design for reliability enhancement in flip chip package |
JP5588895B2 (ja) * | 2011-02-28 | 2014-09-10 | 日立オートモティブシステムズ株式会社 | パワー半導体モジュール,パワー半導体モジュールの製造方法及び電力変換装置 |
US9887144B2 (en) * | 2011-09-08 | 2018-02-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Ring structure for chip packaging |
US20130119529A1 (en) * | 2011-11-15 | 2013-05-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device having lid structure and method of making same |
WO2013116999A1 (en) * | 2012-02-09 | 2013-08-15 | Nokia Siemens Networks Oy | Method and apparatus for reducing the mechanical stress when mounting assemblies with thermal pads |
JP5928222B2 (ja) * | 2012-07-30 | 2016-06-01 | 株式会社ソシオネクスト | 半導体装置および半導体装置の製造方法 |
JP5935598B2 (ja) * | 2012-08-27 | 2016-06-15 | 株式会社デンソー | 半導体装置 |
US9041192B2 (en) * | 2012-08-29 | 2015-05-26 | Broadcom Corporation | Hybrid thermal interface material for IC packages with integrated heat spreader |
US8921994B2 (en) * | 2012-09-14 | 2014-12-30 | Freescale Semiconductor, Inc. | Thermally enhanced package with lid heat spreader |
US20140091461A1 (en) * | 2012-09-30 | 2014-04-03 | Yuci Shen | Die cap for use with flip chip package |
US9136159B2 (en) * | 2012-11-15 | 2015-09-15 | Amkor Technology, Inc. | Method and system for a semiconductor for device package with a die-to-packaging substrate first bond |
JP6056490B2 (ja) * | 2013-01-15 | 2017-01-11 | 株式会社ソシオネクスト | 半導体装置とその製造方法 |
US9812377B2 (en) * | 2013-09-04 | 2017-11-07 | Mitsubishi Electric Corporation | Semiconductor module and inverter device |
US9437519B2 (en) * | 2014-02-25 | 2016-09-06 | International Business Machines Corporation | Tim strain mitigation in electronic modules |
JP2015216199A (ja) * | 2014-05-09 | 2015-12-03 | 新光電気工業株式会社 | 半導体装置、熱伝導部材及び半導体装置の製造方法 |
JP6314731B2 (ja) * | 2014-08-01 | 2018-04-25 | 株式会社ソシオネクスト | 半導体装置及び半導体装置の製造方法 |
US9418909B1 (en) * | 2015-08-06 | 2016-08-16 | Xilinx, Inc. | Stacked silicon package assembly having enhanced lid adhesion |
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KR102490814B1 (ko) | 2023-01-20 |
CN111446217A (zh) | 2020-07-24 |
CN105870080A (zh) | 2016-08-17 |
JP2016146427A (ja) | 2016-08-12 |
TW202107651A (zh) | 2021-02-16 |
KR20230016237A (ko) | 2023-02-01 |
KR102608133B1 (ko) | 2023-11-30 |
US20160233141A1 (en) | 2016-08-11 |
TWI709205B (zh) | 2020-11-01 |
CN105870080B (zh) | 2020-05-19 |
TW202329358A (zh) | 2023-07-16 |
US20200035582A1 (en) | 2020-01-30 |
TW201640629A (zh) | 2016-11-16 |
KR20160098046A (ko) | 2016-08-18 |
TWI795677B (zh) | 2023-03-11 |
CN111446217B (zh) | 2024-02-09 |
US11488886B2 (en) | 2022-11-01 |
US20230111868A1 (en) | 2023-04-13 |
KR20230169877A (ko) | 2023-12-18 |
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