JP6388029B2 - 縦結合共振子型弾性表面波フィルタ - Google Patents
縦結合共振子型弾性表面波フィルタ Download PDFInfo
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- JP6388029B2 JP6388029B2 JP2016529336A JP2016529336A JP6388029B2 JP 6388029 B2 JP6388029 B2 JP 6388029B2 JP 2016529336 A JP2016529336 A JP 2016529336A JP 2016529336 A JP2016529336 A JP 2016529336A JP 6388029 B2 JP6388029 B2 JP 6388029B2
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- 238000010897 surface acoustic wave method Methods 0.000 title claims description 67
- 239000000758 substrate Substances 0.000 claims description 18
- 230000001902 propagating effect Effects 0.000 claims description 13
- 239000000463 material Substances 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000012528 membrane Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052878 cordierite Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052839 forsterite Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14544—Transducers of particular shape or position
- H03H9/1457—Transducers having different finger widths
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02566—Characteristics of substrate, e.g. cutting angles of semiconductor substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/6433—Coupled resonator filters
- H03H9/6436—Coupled resonator filters having one acoustic track only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
- H03H9/725—Duplexers
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
2…支持基板
3…高音速膜
4…低音速膜
5…圧電膜
6〜10…第1〜第5のIDT電極
11,12…反射器
21,22…第1,第2のバスバー
23a〜23g…第1の電極指
24a〜24f…第2の電極指
31…デュプレクサ
32…アンテナ端子
33…共通接続端子
34…送信端子
35…ラダー型フィルタ
36…受信端子
37…接続点
41…縦結合共振子型弾性表面波フィルタ
42…高音速支持基板
P1〜P4,P11,P12…並列腕共振子
S1〜S5,S11,S12…直列腕共振子
Claims (5)
- 圧電膜を有する縦結合共振子型弾性表面波フィルタであって、
前記圧電膜を伝搬する弾性波の音速よりも伝搬するバルク波音速が高速である高音速部材と、
前記高音速部材上に積層されており、前記圧電膜を伝搬するバルク波の音速よりも、伝搬するバルク波音速が低速である低音速膜と、
前記低音速膜上に積層された前記圧電膜と、
前記圧電膜の一方面に形成されており、前記縦結合共振子型弾性表面波フィルタを構成するための複数のIDT電極とを備え、SH波を利用しており、
前記複数のIDT電極のうち少なくとも1つのIDT電極において、レイリー波スプリアスを抑圧するようにデューティが当該IDT電極の弾性波伝搬方向全長にわたり調整されており、
前記少なくとも1つのIDT電極において、デューティが最大の部分と、デューティが最小の部分とのデューティの比率が、1.04以上、2.5以下の範囲にある、縦結合共振子型弾性表面波フィルタ。 - 前記少なくとも1つのIDT電極において、デューティが前記弾性波伝搬方向全長にわたり一様ではない、請求項1に記載の縦結合共振子型弾性表面波フィルタ。
- 前記少なくとも1つのIDT電極が、前記複数のIDT電極の全てである、請求項1または2に記載の縦結合共振子型弾性表面波フィルタ。
- 前記高音速部材の前記低音速膜とは反対側の面に積層された支持基板をさらに備える、請求項1〜3のいずれか1項に記載の縦結合共振子型弾性表面波フィルタ。
- 前記高音速部材が、伝搬するバルク波音速が前記圧電膜を伝搬する弾性波の音速よりも速い、高音速支持基板からなる、請求項1〜3のいずれか1項に記載の縦結合共振子型弾性表面波フィルタ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2014130987 | 2014-06-26 | ||
JP2014130987 | 2014-06-26 | ||
PCT/JP2015/067196 WO2015198904A1 (ja) | 2014-06-26 | 2015-06-15 | 縦結合共振子型弾性表面波フィルタ |
Publications (2)
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JPWO2015198904A1 JPWO2015198904A1 (ja) | 2017-04-20 |
JP6388029B2 true JP6388029B2 (ja) | 2018-09-12 |
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JP2016529336A Active JP6388029B2 (ja) | 2014-06-26 | 2015-06-15 | 縦結合共振子型弾性表面波フィルタ |
Country Status (4)
Country | Link |
---|---|
US (1) | US10148248B2 (ja) |
JP (1) | JP6388029B2 (ja) |
CN (1) | CN106416067B (ja) |
WO (1) | WO2015198904A1 (ja) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2016185772A1 (ja) * | 2015-05-15 | 2016-11-24 | 株式会社村田製作所 | 弾性表面波装置及びその製造方法 |
US10536133B2 (en) | 2016-04-22 | 2020-01-14 | Avago Technologies International Sales Pte. Limited | Composite surface acoustic wave (SAW) device with absorbing layer for suppression of spurious responses |
JP6750528B2 (ja) * | 2016-04-21 | 2020-09-02 | 株式会社村田製作所 | 弾性波フィルタ装置 |
CN116599494A (zh) * | 2016-11-18 | 2023-08-15 | 株式会社村田制作所 | 声表面波滤波器以及多工器 |
WO2018212047A1 (ja) * | 2017-05-15 | 2018-11-22 | 株式会社村田製作所 | マルチプレクサ、高周波フロントエンド回路および通信装置 |
US10536131B2 (en) | 2017-06-20 | 2020-01-14 | Skyworks Solutions, Inc. | Surface acoustic wave device with thermally conductive layer |
DE112018004059B4 (de) * | 2017-08-09 | 2022-09-29 | Murata Manufacturing Co., Ltd. | Multiplexer |
WO2019031202A1 (ja) * | 2017-08-09 | 2019-02-14 | 株式会社村田製作所 | 弾性波装置、マルチプレクサ、高周波フロントエンド回路及び通信装置 |
WO2019039474A1 (ja) * | 2017-08-25 | 2019-02-28 | 日本碍子株式会社 | 接合体および弾性波素子 |
JP6806265B2 (ja) * | 2017-09-19 | 2021-01-06 | 株式会社村田製作所 | 弾性波フィルタ装置及びマルチプレクサ |
CN108151907B (zh) * | 2017-12-25 | 2019-12-10 | 电子科技大学 | Lgs声表面波温度传感器的线性温度频率特性测算方法 |
CN108039872A (zh) * | 2017-12-26 | 2018-05-15 | 海宁市瑞宏科技有限公司 | 一种用于高性能声表面波滤波器的谐振器结构设计 |
JP2019145895A (ja) * | 2018-02-16 | 2019-08-29 | 株式会社村田製作所 | 弾性波装置、マルチプレクサ、高周波フロントエンド回路及び通信装置 |
FR3079053B1 (fr) * | 2018-03-16 | 2020-03-27 | Frec'n'sys | Substrats composites pour les dispositifs d'etiquette a ondes acoustiques de surface pour applications de rfid et de capteurs |
WO2019226461A1 (en) | 2018-05-21 | 2019-11-28 | Skyworks Solutions, Inc. | Multi-layer piezoelectric substrate with heat dissipation |
DE102019106997A1 (de) * | 2019-03-19 | 2020-09-24 | RF360 Europe GmbH | SAW-Resonator mit reduzierten Störmoden, elektroakustisches Filter und Multiplexer |
CN113632377A (zh) * | 2019-03-29 | 2021-11-09 | 株式会社村田制作所 | 纵向耦合谐振器型弹性波滤波器以及滤波器装置 |
WO2022071062A1 (ja) * | 2020-09-29 | 2022-04-07 | 株式会社村田製作所 | 弾性波装置 |
CN112615601A (zh) * | 2020-12-18 | 2021-04-06 | 广东广纳芯科技有限公司 | 一种具有poi结构的高fom值兰姆波谐振器 |
CN112838838A (zh) * | 2020-12-30 | 2021-05-25 | 广东广纳芯科技有限公司 | 一种具有单晶pmnt的声表面波谐振器及制造方法 |
CN112787620A (zh) * | 2021-01-13 | 2021-05-11 | 广东广纳芯科技有限公司 | 一种具有多层膜结构的声表面波谐振器及制造方法 |
WO2023002948A1 (ja) * | 2021-07-20 | 2023-01-26 | 株式会社村田製作所 | 受信フィルタ及び複合フィルタ装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5235233A (en) * | 1988-03-17 | 1993-08-10 | Fanuc Ltd. | Surface acoustic wave device |
JP3419402B2 (ja) | 2001-04-16 | 2003-06-23 | 株式会社村田製作所 | 弾性表面波装置、通信装置 |
JP3687566B2 (ja) * | 2000-07-25 | 2005-08-24 | 株式会社村田製作所 | 縦結合共振子型弾性表面波フィルタ |
JP2004166213A (ja) | 2002-09-20 | 2004-06-10 | Murata Mfg Co Ltd | 弾性表面波装置、通信装置 |
WO2005099089A1 (ja) * | 2004-04-01 | 2005-10-20 | Toyo Communication Equipment Co., Ltd. | 弾性表面波デバイス |
JP4657002B2 (ja) | 2005-05-12 | 2011-03-23 | 信越化学工業株式会社 | 複合圧電基板 |
JPWO2006137464A1 (ja) * | 2005-06-21 | 2009-01-22 | エプソントヨコム株式会社 | 弾性表面波デバイス、モジュール、及び発振器 |
WO2007145057A1 (ja) * | 2006-06-16 | 2007-12-21 | Murata Manufacturing Co., Ltd. | 弾性表面波装置 |
EP2357729A4 (en) * | 2008-10-24 | 2015-03-25 | Seiko Epson Corp | SURFACE ACOUSTIC WAVE RESONATOR, SURFACE ACOUSTIC WAVE OSCILLATOR, AND SURFACE ACOUSTIC WAVE MODULE DEVICE |
KR101534654B1 (ko) | 2010-12-24 | 2015-07-07 | 가부시키가이샤 무라타 세이사쿠쇼 | 탄성파 장치 및 그 제조 방법 |
CN103891138B (zh) * | 2011-09-30 | 2016-12-07 | 株式会社村田制作所 | 弹性波装置 |
JP5850137B2 (ja) * | 2012-03-23 | 2016-02-03 | 株式会社村田製作所 | 弾性波装置及びその製造方法 |
JP2015109574A (ja) * | 2013-12-05 | 2015-06-11 | 株式会社村田製作所 | 縦結合共振子型弾性表面波フィルタおよび通信機 |
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2015
- 2015-06-15 CN CN201580027374.5A patent/CN106416067B/zh active Active
- 2015-06-15 JP JP2016529336A patent/JP6388029B2/ja active Active
- 2015-06-15 WO PCT/JP2015/067196 patent/WO2015198904A1/ja active Application Filing
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CN106416067B (zh) | 2019-03-08 |
JPWO2015198904A1 (ja) | 2017-04-20 |
CN106416067A (zh) | 2017-02-15 |
WO2015198904A1 (ja) | 2015-12-30 |
US20170093371A1 (en) | 2017-03-30 |
US10148248B2 (en) | 2018-12-04 |
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