JP6383702B2 - ナノワイヤ構造を製造する方法 - Google Patents
ナノワイヤ構造を製造する方法 Download PDFInfo
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- JP6383702B2 JP6383702B2 JP2015104047A JP2015104047A JP6383702B2 JP 6383702 B2 JP6383702 B2 JP 6383702B2 JP 2015104047 A JP2015104047 A JP 2015104047A JP 2015104047 A JP2015104047 A JP 2015104047A JP 6383702 B2 JP6383702 B2 JP 6383702B2
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- nanowires
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- nanowire
- electric field
- wire
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Description
MOCVDシステムは複雑な真空システムであり、装置の製造コストに著しく寄与すること、
成長はバッチで行われ、個々のバッチ間で固有の変動を伴うこと、
大面積にわたる多数のナノワイヤの成長は、同じバッチのナノワイヤ間の変動を引き起こすこと、
ナノワイヤは基板上で成長され、これは400〜700℃の温度に耐えることを必要とすること、
ナノワイヤを、半導体基板上で垂直方向、又は任意の他の方向に整列させることは、制御されたエピタキシャル成長を必要とすることである。
とが目的である。
なるであろう。
て整列させるステップとを備える。
a.単極ナノワイヤに関して、ナノワイヤは電界に沿って、しかし種粒子の端に関して好適ではない方向に配向される。
b.ドーピングにおいて軸勾配を有する単極ドープされたナノワイヤは、より高くp(n)ドープされた端はより容易に正に(負に)荷電され、この端を電界中で上向き(下向き)に向けるため、優先的に配向される。
a.電界に曝露されると、pドープされた端は正に荷電し、nドープされた端は負に荷電し、したがって、ナノワイヤは、pドープされた端が電界の方向を指す明確な方向に配向される。
b.同じ効果が、ショットキダイオードがワイヤとその種粒子との間に形成される単極ドープされたナノワイヤに適用される。
a.(誘導された)双極子による整列エネルギー(Ed)は、第1の程度まで電界に比例し、
b.Edは、ワイヤ直径の2乗に比例するが、その長さには依存せず、
c.ワイヤ材料の分極による整列エネルギー(Ep)は、電界の2乗に比例し、
d.Epは、ワイヤのアスペクト比(直径で割った長さ)の3乗に比例する。
な拡散は、
a.シースフロー(sheath flow)を導入し、片側の堆積を防ぐことができ、
b.逆に配列されたワイヤの堆積のため、基板をナノワイヤの両側に配置することができ、
c.平板をより近くに動かすことによって、又は、ナノワイヤを含む流体の流れに狭窄を設計することによって、電極間の距離をワイヤ長より短くすることができ、ワイヤを強制的に基板に接触させることができる。
a.より長くより細いワイヤは、電界勾配によるより強い力を受け、より高い電界を有する領域に向かってより高速に移動する。
b.電気的分極率は、異なった材料ごとに異なっている。
c.荷電ワイヤに関して、勾配力は、荷電による力と釣り合わせることができ、サイズ及び材料依存の分類のさらなる制御を可能にする。
ナノワイヤの変化する配向とを発生させることができる。
1.実質的に平坦な任意の絶縁性、半導体性、又は金属の基板上に堆積させることができ、
2.好適にはロールツーロールプロセスで、基板を、印刷機と非常に類似して、堆積の点、縞又は領域を通過させ、網、箔、又は薄板の形の基板上に堆積させることができ、
3.コロイド懸濁液のように液体中に分散されたナノワイヤの場合、ワイヤを含む液体を基板に塗布することができ、ワイヤは、
a.液体の乾燥/蒸発中に、
b.液体の凝固/重合中又はその前に、整列され、
4.ナノワイヤの粘着及び/又は電気的接触を高めるためにポリマー、金属、液体、又は他の材料で被覆された基板上に堆積させることができ、又は、
a.ワイヤ端のみが粘着するように粘着材料をきわめて薄くすることができ、
b.粘着材料は、ナノワイヤの長さと同じ程度の厚さを有し、
c.ナノワイヤが液体中に分散している場合、この液体は、基板上に徐々に厚くなるポリマーを形成するモノマーを備えることができ、
5.ナノワイヤの堆積を増大又は局所的に抑制するために、押し出し形状、変化する粘着性、表面電荷などによってパターン化された基板上に堆積させることができ、
6.ナノワイヤが機能を強化又は修正することを目的とする機能性基板上に堆積させることができ、
7.基板の裏面に構成された電極によって、又は、(導電性)基板それ自体の構造によって与えられる点、縞などの複雑な機能的パターンに堆積させることができ、
a.ナノワイヤの極性/方向は、例えば、縞又はチェッカー盤パターンで変化してもよく、
b.ナノワイヤは、様々な種類のものであり、波長選択的な方法で電気双極子を導入することによって分類され、
8.基板の両側に堆積させることができ、どちらの側のワイヤも様々な種類のものであってもよく、上述した手段のいずれかを含む様々な手段によって堆積させることができ、
9.連続プロセスで堆積させることができ、接触又は粘着層、絶縁性酸化物又はポリマーなどは、基板上に、ナノワイヤの上流又は下流に堆積される。
1.代表的な材料は、III−V又はIII−N半導体(GaAs、InP、GaSb、GaInN及び関係する合金)、シリコン、ゲルマニウム、又は、II−VI半導体(ZnO、ZnS、CdS、CdSe及び関係する合金)である、例えば、MOCVD成長法、液体溶液化学、気相成長法によって製造された50〜500nmの直径及び1〜10μmの長さを有する半導体ナノワイヤ、
2.磁性、超電導性、又は通常の金属で作ることができる、例えば、陽極酸化処理されたアルミニウムテンプレートでの電着、ひげ結晶成長法、気相成長によって製造された金属ナノワイヤ、
3.製造された又は天然の、絶縁性、高バンドギャップ半導体、又は高TC超電導体ナノワイヤ、
4.カーボンナノチューブ、又は、
5.生物学的なナノファイバ、例えば、セルロース、たんぱく質、高分子、及び細菌を含むが、これらに限定されない。
から構成されている、バッテリ。小さい直径のナノワイヤは、それらをひずみに対して鈍感にし、したがって、バッテリサイクル中の体積変化に伴う直径の変化に対して鈍感にする。
Claims (4)
- 2つの対向電極とナノワイヤを含む液体を堆積する機構とを備え、
前記堆積の機構は前記ナノワイヤを含む液体を基板上に堆積し、
前記2つの対向電極間に生じる電界の印加により、前記基板上に前記ナノワイヤを、前記基板の表面の法線方向である基板に垂直な方向に整列させ、
前記ナノワイヤはpn接合を構成し、
前記ナノワイヤを前記基板表面の法線方向に配列させる前記電界の印加により、前記pn接合のn側からp側に向かう電気双極子を誘起し、
前記ナノワイヤは、前記液体の乾燥中、または、前記液体の蒸発中、若しくは、前記液体の凝固中に整列される、装置。 - さらに、前記ナノワイヤを前記基板上に配置させる手段、および、前記ナノワイヤの粘着を高める材料で前記基板の表面を被覆する手段を備え、
前記対向電極は、前記基板の上方に設けられた第1電極と前記第1電極の下方に設けられた第2電極であり、
前記ナノワイヤはナノワイヤの複数の部分集団を備え、
前記ナノワイヤを前記基板上に配置させる手段は、組成および/またはサイズに応じて、前記ナノワイヤを選択的に配置させる、請求項1に記載の装置。 - さらに、前記ナノワイヤに光照射する手段を備え、
前記装置は均一な電界もしくは電界勾配を形成するように構成され、
ワイヤサイズの分類を、異なった波長の光照射と組み合わせて、垂直整列と連続して使用し、ワイヤをサイズ及び組成の両方によって選択的に堆積させ、
前記光照射の手段は、前記ナノワイヤに異なった所定の波長領域の光を照射することによって異なったバンドギャップを有するナノワイヤを選択的に整列させ、前記装置が、前記基板上への前記ナノワイヤの堆積を連続して行う、請求項2に記載の装置。 - 前記液体はモノマーを含み、前記ナノワイヤは、前記液体中で前記モノマーが前記ナノワイヤを封入するポリマーとなる重合中に整列される、請求項3に記載の装置。
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EP2516323B1 (en) | 2018-11-07 |
CN105347297B (zh) | 2018-01-09 |
EP2516323A1 (en) | 2012-10-31 |
JP2013515370A (ja) | 2013-05-02 |
JP5753192B2 (ja) | 2015-07-22 |
US9305766B2 (en) | 2016-04-05 |
US20130203242A1 (en) | 2013-08-08 |
CN102770367A (zh) | 2012-11-07 |
US9954060B2 (en) | 2018-04-24 |
EP2516323A4 (en) | 2017-06-28 |
CN102770367B (zh) | 2015-08-19 |
US20160268374A1 (en) | 2016-09-15 |
HK1178507A1 (zh) | 2013-09-13 |
JP2015216379A (ja) | 2015-12-03 |
CN105347297A (zh) | 2016-02-24 |
KR20120130751A (ko) | 2012-12-03 |
WO2011078780A1 (en) | 2011-06-30 |
KR101914651B1 (ko) | 2018-11-05 |
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