CN1745468B - 大面积纳米启动宏电子衬底及其用途 - Google Patents
大面积纳米启动宏电子衬底及其用途 Download PDFInfo
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/40—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4
- H01F1/401—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted
- H01F1/405—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted of IV type, e.g. Ge1-xMnx
Abstract
Description
Claims (56)
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PCT/US2003/030721 WO2004032193A2 (en) | 2002-09-30 | 2003-09-30 | Large-area nanoenabled macroelectronic substrates and uses therefor |
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CN 03825281 Pending CN1703730A (zh) | 2002-09-30 | 2003-09-30 | 使用纳米线晶体管的集成显示器 |
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US7906803B2 (en) * | 2005-12-06 | 2011-03-15 | Canon Kabushiki Kaisha | Nano-wire capacitor and circuit device therewith |
MY158347A (en) | 2007-02-15 | 2016-09-30 | Massachusetts Inst Technology | Solar cells with textured surfaces |
CN101582447B (zh) | 2008-05-14 | 2010-09-29 | 清华大学 | 薄膜晶体管 |
CN101587839B (zh) | 2008-05-23 | 2011-12-21 | 清华大学 | 薄膜晶体管的制备方法 |
CN101582445B (zh) | 2008-05-14 | 2012-05-16 | 清华大学 | 薄膜晶体管 |
CN101582450B (zh) | 2008-05-16 | 2012-03-28 | 清华大学 | 薄膜晶体管 |
CN101582449B (zh) | 2008-05-14 | 2011-12-14 | 清华大学 | 薄膜晶体管 |
CN101582446B (zh) | 2008-05-14 | 2011-02-02 | 鸿富锦精密工业(深圳)有限公司 | 薄膜晶体管 |
CN101593699B (zh) | 2008-05-30 | 2010-11-10 | 清华大学 | 薄膜晶体管的制备方法 |
CN101582382B (zh) | 2008-05-14 | 2011-03-23 | 鸿富锦精密工业(深圳)有限公司 | 薄膜晶体管的制备方法 |
CN101582448B (zh) | 2008-05-14 | 2012-09-19 | 清华大学 | 薄膜晶体管 |
CN101582444A (zh) | 2008-05-14 | 2009-11-18 | 清华大学 | 薄膜晶体管 |
KR101101780B1 (ko) | 2008-09-08 | 2012-01-05 | 서울대학교산학협력단 | 질화물 박막 구조 및 그 형성 방법 |
JP4912448B2 (ja) * | 2009-10-22 | 2012-04-11 | シャープ株式会社 | 発光装置およびその製造方法 |
US9305766B2 (en) * | 2009-12-22 | 2016-04-05 | Qunano Ab | Method for manufacturing a nanowire structure |
JP2011171716A (ja) * | 2010-02-16 | 2011-09-01 | Korea Electronics Telecommun | 熱電素子及びその形成方法、これを利用した温度感知センサ及び熱源イメージセンサ |
JP4814394B2 (ja) * | 2010-03-05 | 2011-11-16 | シャープ株式会社 | 発光装置の製造方法 |
CN102214573B (zh) * | 2010-04-09 | 2013-05-01 | 中国科学院微电子研究所 | 一种纳米线共振压电场效应晶体管的制作方法 |
US8356262B1 (en) * | 2011-06-22 | 2013-01-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Cell architecture and method |
US8729529B2 (en) * | 2011-08-03 | 2014-05-20 | Ignis Innovation Inc. | Thin film transistor including a nanoconductor layer |
US8685823B2 (en) * | 2011-11-09 | 2014-04-01 | International Business Machines Corporation | Nanowire field effect transistor device |
JP6219933B2 (ja) | 2012-05-25 | 2017-10-25 | ソル ヴォルテイックス エービーSol Voltaics Ab | 同心流反応装置 |
EP3054745A4 (en) * | 2013-10-01 | 2017-06-28 | Sumitomo Chemical Company Limited | Light emitting element |
CN104638079B (zh) * | 2015-02-02 | 2018-03-23 | 浙江大学 | 基于一维微纳结构/氮化镓薄膜肖特基结的紫外led |
CN105206706B (zh) * | 2015-08-21 | 2017-12-01 | 重庆科技学院 | 纳米链太阳能电池的制备方法 |
CN105206710B (zh) * | 2015-10-22 | 2017-04-05 | 重庆科技学院 | 具有织构的铁电薄膜的制备方法 |
CN105399061B (zh) * | 2015-11-18 | 2017-11-07 | 山东师范大学 | 一种一维硒化锡单晶纳米线的制备方法 |
CN105655423B (zh) * | 2016-01-19 | 2017-04-05 | 合肥工业大学 | 一种基于硫属亚铜化合物的纳米异质结太阳能电池及其制备方法 |
US10903319B2 (en) * | 2016-06-15 | 2021-01-26 | Nanomedical Diagnostics, Inc. | Patterning graphene with a hard mask coating |
US10381315B2 (en) * | 2017-11-16 | 2019-08-13 | Samsung Electronics Co., Ltd. | Method and system for providing a reverse-engineering resistant hardware embedded security module |
CN108400207B (zh) * | 2018-02-28 | 2019-11-19 | 浙江大学 | 一种硫化镉纳米带硅基异质结发光二极管及其制造方法 |
CN111916338B (zh) * | 2019-05-08 | 2023-07-25 | 京东方科技集团股份有限公司 | 一种硅基纳米线、其制备方法及薄膜晶体管 |
CN111438944B (zh) * | 2020-04-02 | 2021-10-01 | 吉林大学 | 一种基于su-8胶电解法制备纳米尺度电射流喷头的方法 |
CN112928221B (zh) * | 2021-01-25 | 2023-10-24 | 中国科学院长春应用化学研究所 | 一种发光层含有纳米聚集体的晶态有机电致发光二极管及应用 |
CN113725348A (zh) * | 2021-08-10 | 2021-11-30 | 武汉理工大学 | 一种制冷性能增强的柔性热电磁能量转换薄膜及其制备方法 |
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