JP6345266B2 - 波長変換素子、波長変換素子を含む発光半導体コンポーネント、波長変換素子の製造方法、および波長変換素子を含む発光半導体コンポーネントの製造方法 - Google Patents
波長変換素子、波長変換素子を含む発光半導体コンポーネント、波長変換素子の製造方法、および波長変換素子を含む発光半導体コンポーネントの製造方法 Download PDFInfo
- Publication number
- JP6345266B2 JP6345266B2 JP2016556701A JP2016556701A JP6345266B2 JP 6345266 B2 JP6345266 B2 JP 6345266B2 JP 2016556701 A JP2016556701 A JP 2016556701A JP 2016556701 A JP2016556701 A JP 2016556701A JP 6345266 B2 JP6345266 B2 JP 6345266B2
- Authority
- JP
- Japan
- Prior art keywords
- conversion element
- wavelength conversion
- wavelength
- wavelength converting
- sintered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000006243 chemical reaction Methods 0.000 title claims description 169
- 238000000034 method Methods 0.000 title claims description 90
- 239000004065 semiconductor Substances 0.000 title claims description 45
- 238000004519 manufacturing process Methods 0.000 title claims description 42
- 239000000463 material Substances 0.000 claims description 237
- 238000000059 patterning Methods 0.000 claims description 20
- 238000005245 sintering Methods 0.000 claims description 18
- 239000002002 slurry Substances 0.000 claims description 17
- 230000005855 radiation Effects 0.000 claims description 16
- 229910010293 ceramic material Inorganic materials 0.000 claims description 12
- 239000000919 ceramic Substances 0.000 claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 8
- 239000011159 matrix material Substances 0.000 claims description 3
- 102100032047 Alsin Human genes 0.000 claims description 2
- 101710187109 Alsin Proteins 0.000 claims description 2
- 229910003564 SiAlON Inorganic materials 0.000 claims description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 2
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 20
- 239000002245 particle Substances 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 238000004049 embossing Methods 0.000 description 4
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 238000005266 casting Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000002861 polymer material Substances 0.000 description 3
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- DKCRDQKHMMPWPG-UHFFFAOYSA-N 3-methylpiperidine-2,6-dione Chemical compound CC1CCC(=O)NC1=O DKCRDQKHMMPWPG-UHFFFAOYSA-N 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 239000005041 Mylar™ Substances 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- PWHHVCGHBBQHRG-UHFFFAOYSA-N [O-2].[Al+3].[Y+3].[Lu+3] Chemical compound [O-2].[Al+3].[Y+3].[Lu+3] PWHHVCGHBBQHRG-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- OFOSXJVLRUUEEW-UHFFFAOYSA-N aluminum;lutetium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Lu+3] OFOSXJVLRUUEEW-UHFFFAOYSA-N 0.000 description 1
- PCTXFKUTDJMZPU-UHFFFAOYSA-N aluminum;oxygen(2-);terbium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Tb+3] PCTXFKUTDJMZPU-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052605 nesosilicate Inorganic materials 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000004762 orthosilicates Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 238000000233 ultraviolet lithography Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Optical Filters (AREA)
- Luminescent Compositions (AREA)
Description
A)上面およびこの上面とは反対側に位置する底面を備えた支持シートを準備するステップ。
B)支持シート上面に波長変換材料を設けるステップ。
C)波長変換材料を直接的または間接的にパターニングして、この波長変換材料により少なくとも部分的に囲まれるチャネルを、この波長変換材料中に形成するステップ。
D)チャネルを、非変換セパレータ材料から成るスラリーにより充填するステップ。
E)波長変換素子を焼結するステップ。
Claims (16)
- 少なくとも1つの焼結済み波長変換材料を含む波長変換素子であって、
・前記焼結済み波長変換材料内のチャネルによって格子が形成されており、
・前記チャネルは、前記焼結済み波長変換材料によって少なくとも部分的に囲まれており、
・前記チャネルは、前記焼結済み波長変換材料中を少なくとも部分的に通って、前記波長変換素子の主延在方向に対し垂直なまたは斜めの方向に延在しており、
・前記チャネルは、焼結済み非変換セパレータ材料を含んでおり、
・前記焼結済み非変換セパレータ材料は、紫外線および/または可視光に対し非透過性である、
波長変換素子。 - 前記チャネルは、前記波長変換素子の主延在方向に少なくとも部分的に平行に延在している、
請求項1記載の波長変換素子。 - 前記チャネルは、前記焼結済み波長変換材料中を完全に貫通して延在しており、または、
前記チャネルは、前記焼結済み波長変換材料中を部分的に通って延在している、
請求項1記載の波長変換素子。 - 前記焼結済み非変換セパレータ材料は、紫外線および/または可視光に対し反射性である、
請求項1記載の波長変換素子。 - 前記焼結済み波長変換材料は、以下の材料すなわち、
YAG: Ce, LuAG: Ce, LuYAG: Ce
のうちの1つまたは複数から選択された、ドーピングされたセラミック材料を含む、
請求項1記載の波長変換素子。 - 前記焼結済み波長変換材料は、グループすなわち、
(AE)SiON, (AE)SiAlON, (AE)AlSiN3, (AE)2Si5N8 ただしAEはアルカリ土類金属、
硫化物、
オルトケイ酸塩、
から選択された1つまたは複数の材料を含む、
請求項1記載の波長変換素子。 - 前記焼結済み波長変換材料は、マトリックス材料中に分散された波長変換物質を含む、
請求項1記載の波長変換素子。 - 波長変換素子の製造方法であって、以下のステップを含む、すなわち、
A)上面および該上面とは反対側に位置する底面を備えた支持シートを準備するステップと、
B)前記支持シートの前記上面に波長変換材料を設けるステップと、
C)前記波長変換材料を直接的または間接的にパターニングして、該波長変換材料により少なくとも部分的に囲まれるチャネルを、該波長変換材料中に形成するステップと、
D)前記チャネルを、紫外線および/または可視光に対し非透過性の非変換セパレータ材料から成るスラリーによって充填するステップと、
E)前記波長変換素子を焼結するステップと
を含む、
波長変換素子の製造方法。 - 前記波長変換材料を直接的にパターニングするステップは以下のステップを含む、すなわち、
前記波長変換材料を選択的に除去することによって、該波長変換材料内に格子状のパターンで前記チャネルを形成し、前記チャネルを少なくとも一部の個所で、前記波長変換材料中を完全に貫通して延在させ、前記波長変換材料が少なくとも部分的に存在しない領域を形成する、
請求項8記載の方法。 - 前記直接的なパターニングを、さらに付加的に前記チャネルが少なくとも部分的に前記支持シート中も通って延在するように実施する、
請求項9記載の方法。 - 前記波長変換材料を間接的にパターニングするステップは以下のステップを含む、すなわち、
前記支持シートの上面に除去可能なアイランド領域を設け、該除去可能なアイランド領域を互いにスペースをおいて配置し、
前記波長変換材料を少なくとも一部の個所で、前記除去可能なアイランド領域の間に充填し、
前記アイランド領域を、前記支持シートの上面から除去して、前記チャネルを形成する、
請求項8記載の方法。 - 前記除去可能なアイランド領域はフォトレジストを含む、
請求項11記載の方法。 - 前記支持シートは非ドーピングセラミックシートを含む、
請求項8記載の方法。 - 前記波長変換素子を焼結前に予備焼結する、
請求項8記載の方法。 - 動作中に光出射面を介して発光方向に沿って1次放射を送出するピクセル型発光半導体チップと、請求項1記載の波長変換素子とを含む発光半導体コンポーネントであって、
前記波長変換素子は、前記発光半導体チップの光出射面の上に配置されている、
発光半導体コンポーネント。 - 請求項8記載の方法により波長変換素子を製造し、
次に該波長変換素子を、ピクセル型発光半導体チップの光出射面の上に配置する、
請求項15記載の発光半導体コンポーネントの製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201461950574P | 2014-03-10 | 2014-03-10 | |
US61/950,574 | 2014-03-10 | ||
PCT/EP2015/054668 WO2015135839A1 (en) | 2014-03-10 | 2015-03-05 | Wavelength conversion element, light-emitting semiconductor component comprising a wavelength conversion element, method for producing a wavelength conversion element and method for producing a light-emitting semiconductor component comprising a wavelength conversion element |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017510843A JP2017510843A (ja) | 2017-04-13 |
JP6345266B2 true JP6345266B2 (ja) | 2018-06-20 |
Family
ID=52627230
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016556701A Expired - Fee Related JP6345266B2 (ja) | 2014-03-10 | 2015-03-05 | 波長変換素子、波長変換素子を含む発光半導体コンポーネント、波長変換素子の製造方法、および波長変換素子を含む発光半導体コンポーネントの製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9806240B2 (ja) |
JP (1) | JP6345266B2 (ja) |
CN (1) | CN106030836B (ja) |
DE (1) | DE112015001180T5 (ja) |
WO (1) | WO2015135839A1 (ja) |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11792898B2 (en) | 2012-07-01 | 2023-10-17 | Ideal Industries Lighting Llc | Enhanced fixtures for area lighting |
US11160148B2 (en) | 2017-06-13 | 2021-10-26 | Ideal Industries Lighting Llc | Adaptive area lamp |
CN105684171B (zh) * | 2013-10-29 | 2018-09-07 | 欧司朗光电半导体有限公司 | 波长转换元件、制造方法和具有波长转换元件的发光半导体部件 |
CN115188872A (zh) * | 2015-05-15 | 2022-10-14 | 日亚化学工业株式会社 | 配光构件的制造方法、发光装置的制造方法、配光构件及发光装置 |
FR3043838B1 (fr) * | 2015-11-17 | 2018-06-08 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de fabrication d'une couche contenant des boites quantiques |
US10529696B2 (en) | 2016-04-12 | 2020-01-07 | Cree, Inc. | High density pixelated LED and devices and methods thereof |
CN105957946A (zh) * | 2016-07-13 | 2016-09-21 | 中国人民大学 | 一种近自然光谱的led倒装照明器件 |
JP6648660B2 (ja) | 2016-09-21 | 2020-02-14 | 日亜化学工業株式会社 | 蛍光体含有部材及び蛍光体含有部材を備える発光装置 |
KR20180078940A (ko) * | 2016-12-30 | 2018-07-10 | (재)한국나노기술원 | 발광다이오드 칩 및 그의 제조방법 |
CN106684216A (zh) * | 2017-01-12 | 2017-05-17 | 中国科学院宁波材料技术与工程研究所 | 一种用于白光led的复合透明荧光陶瓷片及其制备方法 |
CN106887486B (zh) * | 2017-03-03 | 2019-11-15 | 中国科学院宁波材料技术与工程研究所 | 用于白光led器件的条形码结构荧光陶瓷及其制备方法与应用 |
KR102422386B1 (ko) | 2017-04-21 | 2022-07-20 | 주식회사 루멘스 | 마이크로 led 디스플레이 장치 및 그 제조방법 |
US10734363B2 (en) | 2017-08-03 | 2020-08-04 | Cree, Inc. | High density pixelated-LED chips and chip array devices |
CN109838763B (zh) * | 2017-09-13 | 2021-04-30 | 深圳光峰科技股份有限公司 | 一种波长转换装置及其制备方法 |
JP6909695B2 (ja) * | 2017-10-02 | 2021-07-28 | 株式会社小糸製作所 | 波長変換部材および光源モジュール |
DE102017124307A1 (de) * | 2017-10-18 | 2019-04-18 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
CN109755355B (zh) * | 2017-11-02 | 2021-12-07 | 深圳光峰科技股份有限公司 | 波长转换元件及其制备方法 |
US10854794B2 (en) * | 2017-12-20 | 2020-12-01 | Lumileds Llc | Monolithic LED array structure |
US11355548B2 (en) * | 2017-12-20 | 2022-06-07 | Lumileds Llc | Monolithic segmented LED array architecture |
JP7101785B2 (ja) * | 2017-12-22 | 2022-07-15 | ルミレッズ リミテッド ライアビリティ カンパニー | 光バリアを有する蛍光体 |
US11054112B2 (en) * | 2017-12-22 | 2021-07-06 | Lumileds Llc | Ceramic phosphor with lateral light barriers |
JP2019135738A (ja) * | 2018-02-05 | 2019-08-15 | 株式会社ブイ・テクノロジー | フルカラーled表示パネル及びその製造方法 |
JP2019140361A (ja) * | 2018-02-15 | 2019-08-22 | 株式会社ブイ・テクノロジー | フルカラーled表示パネル及びその製造方法 |
CN110264877B (zh) * | 2018-03-12 | 2022-01-11 | 深圳光峰科技股份有限公司 | 像素化波长转换装置、像素化波长转换元件及其制造方法 |
DE102018111417A1 (de) | 2018-05-14 | 2019-11-14 | Osram Opto Semiconductors Gmbh | Konversionselement, optoelektronisches bauteil, verfahren zur herstellung einer vielzahl von konversionselementen, verfahren zur herstellung einer vielzahl von optoelektronischen bauteilen und verfahren zur herstellung eines optoelektronischen bauteils |
KR102097470B1 (ko) * | 2018-05-15 | 2020-04-06 | (주)라이타이저 | 퀀텀닷 칩 스케일 패키지 및 그의 제조 방법 |
KR102040975B1 (ko) * | 2018-05-28 | 2019-11-06 | 주식회사 베이스 | 마이크로 led 디스플레이용 색변환 구조체의 제조 방법 |
CN108807647A (zh) * | 2018-06-14 | 2018-11-13 | 中国计量大学 | 一种led结构化荧光膜的制造方法 |
CN108957619B (zh) * | 2018-07-25 | 2022-09-27 | 京东方科技集团股份有限公司 | 一种导光组件、导光组件的制作方法以及背光源 |
CN110797448B (zh) * | 2018-08-02 | 2021-09-21 | 深圳光峰科技股份有限公司 | 波长转换元件及其制备方法 |
DE102018118808A1 (de) * | 2018-08-02 | 2020-02-06 | Osram Opto Semiconductors Gmbh | Verfahren zur herstellung eines bauteils und optoelektronisches bauteil |
JP7187879B2 (ja) * | 2018-08-08 | 2022-12-13 | セイコーエプソン株式会社 | 波長変換素子、光源装置およびプロジェクター |
CN110887022A (zh) * | 2018-09-10 | 2020-03-17 | 深圳光峰科技股份有限公司 | 波长转换装置及光源*** |
US10862008B2 (en) * | 2018-11-20 | 2020-12-08 | Osram Opto Semiconductors Gmbh | Ceramic conversion element, light-emitting device and method for producing a ceramic conversion element |
US10903265B2 (en) | 2018-12-21 | 2021-01-26 | Cree, Inc. | Pixelated-LED chips and chip array devices, and fabrication methods |
US10910433B2 (en) * | 2018-12-31 | 2021-02-02 | Lumileds Llc | Pixelated LED array with optical elements |
WO2020152000A1 (en) | 2019-01-25 | 2020-07-30 | Lumileds Holding B.V. | Method of manufacturing a wavelength-converting pixel array structure |
CN112216774A (zh) * | 2019-07-11 | 2021-01-12 | 成都辰显光电有限公司 | 色彩转换组件、显示面板及制作方法 |
DE102019121515A1 (de) * | 2019-08-09 | 2021-02-11 | Schott Ag | Lichtkonversionseinrichtung und Verfahren zur Herstellung einer Lichtkonversionseinrichtung |
KR102225843B1 (ko) * | 2019-08-20 | 2021-03-09 | 고려대학교 산학협력단 | 하향변환 발광 조합체 및 이를 제조하는 제조 방법 |
EP4052296A1 (en) | 2019-10-29 | 2022-09-07 | Creeled, Inc. | Texturing for high density pixelated-led chips |
CN113707037A (zh) * | 2020-05-22 | 2021-11-26 | 北京芯海视界三维科技有限公司 | 发光模组、显示模组、显示屏及显示器 |
CN114188497A (zh) * | 2020-08-24 | 2022-03-15 | 北京芯海视界三维科技有限公司 | 用于制作光转换层、发光器件的方法和电子装置 |
US11437548B2 (en) | 2020-10-23 | 2022-09-06 | Creeled, Inc. | Pixelated-LED chips with inter-pixel underfill materials, and fabrication methods |
US11527684B2 (en) * | 2020-12-04 | 2022-12-13 | Lumileds Llc | Patterned downconverter and adhesive film for micro-LED, mini-LED downconverter mass transfer |
JP7283489B2 (ja) * | 2021-01-20 | 2023-05-30 | 三菱電機株式会社 | 発光装置 |
DE102021131112A1 (de) | 2021-11-26 | 2023-06-01 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsemittierendes bauelement und verfahren zur herstellung eines strahlungsemittierenden bauelements |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3177300B2 (ja) * | 1992-05-22 | 2001-06-18 | 大日本印刷株式会社 | プラズマディスプレイ用基板のカラーフィルター形成方法 |
US6812636B2 (en) * | 2001-03-30 | 2004-11-02 | Candescent Technologies Corporation | Light-emitting device having light-emissive particles partially coated with light-reflective or/and getter material |
US20090039375A1 (en) * | 2007-08-07 | 2009-02-12 | Cree, Inc. | Semiconductor light emitting devices with separated wavelength conversion materials and methods of forming the same |
WO2010067291A1 (en) * | 2008-12-11 | 2010-06-17 | Koninklijke Philips Electronics N.V. | Adjustable color lamp with movable color conversion layers |
WO2010134331A1 (en) * | 2009-05-22 | 2010-11-25 | Panasonic Corporation | Semiconductor light-emitting device and light source device using the same |
US8921876B2 (en) * | 2009-06-02 | 2014-12-30 | Cree, Inc. | Lighting devices with discrete lumiphor-bearing regions within or on a surface of remote elements |
JP2012169189A (ja) * | 2011-02-15 | 2012-09-06 | Koito Mfg Co Ltd | 発光モジュールおよび車両用灯具 |
US8899767B2 (en) * | 2011-03-31 | 2014-12-02 | Xicato, Inc. | Grid structure on a transmissive layer of an LED-based illumination module |
CN104169641B (zh) * | 2012-03-15 | 2016-08-31 | 株式会社小糸制作所 | 发光装置及车辆用灯具 |
US20130258638A1 (en) * | 2012-03-31 | 2013-10-03 | Michael Dongxue Wang | Wavelength-converting structure for a light source |
KR20140077408A (ko) * | 2012-12-14 | 2014-06-24 | 엘지전자 주식회사 | 형광막 제조방법 및 그 형광막 |
US20140339573A1 (en) * | 2013-05-20 | 2014-11-20 | Goldeneye, Inc. | LED light source with thermally conductive luminescent matrix |
-
2015
- 2015-03-05 CN CN201580010013.XA patent/CN106030836B/zh not_active Expired - Fee Related
- 2015-03-05 JP JP2016556701A patent/JP6345266B2/ja not_active Expired - Fee Related
- 2015-03-05 WO PCT/EP2015/054668 patent/WO2015135839A1/en active Application Filing
- 2015-03-05 DE DE112015001180.3T patent/DE112015001180T5/de not_active Withdrawn
- 2015-03-05 US US15/120,755 patent/US9806240B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US9806240B2 (en) | 2017-10-31 |
DE112015001180T5 (de) | 2016-12-01 |
US20170062672A1 (en) | 2017-03-02 |
CN106030836A (zh) | 2016-10-12 |
CN106030836B (zh) | 2019-04-05 |
WO2015135839A1 (en) | 2015-09-17 |
JP2017510843A (ja) | 2017-04-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6345266B2 (ja) | 波長変換素子、波長変換素子を含む発光半導体コンポーネント、波長変換素子の製造方法、および波長変換素子を含む発光半導体コンポーネントの製造方法 | |
JP6257764B2 (ja) | 発光半導体コンポーネント及びその製造方法並びに当該発光半導体コンポーネントを備えた波長変換素子の製造方法 | |
CN101821862B (zh) | 包括光子晶体和发光陶瓷的发光装置 | |
JP6699634B2 (ja) | 発光装置の製造方法 | |
TWI484658B (zh) | 製造輻射發射半導體晶片之方法、輻射發射半導體晶片以及輻射發射組件 | |
JP6479188B2 (ja) | オプトエレクトロニクス半導体デバイスおよびオプトエレクトロニクス半導体デバイスの製造方法 | |
CN110800117A (zh) | 光源装置及发光装置 | |
JP2018182347A (ja) | 発光装置の製造方法 | |
US10008639B2 (en) | Method for producing optoelectronic semiconductor components and optoelectronic semiconductor component | |
JP6231112B2 (ja) | セラミック変換素子、オプトエレクトロニクス半導体デバイス、及び、セラミック変換素子の製造方法 | |
TW201336971A (zh) | 發光元件用陶瓷體,陶瓷體製作方法,以及照明設備 | |
JP6511809B2 (ja) | 発光装置及びその実装方法、並びに光源装置の製造方法 | |
US20120094083A1 (en) | Light emissive ceramic laminate and method of making same | |
JP7268150B2 (ja) | セラミック変換要素およびその作製方法 | |
CN109755355B (zh) | 波长转换元件及其制备方法 | |
JP6268295B2 (ja) | 横方向に構造形成した蛍光体層を製造するための方法およびそのような蛍光体層を備えたオプトエレクトロニクス半導体部品 | |
JP6246381B2 (ja) | セラミック製変換素子の製造方法および発光装置 | |
JP2018018912A (ja) | 発光装置の製造方法 | |
JP7174215B2 (ja) | 発光装置の製造方法及び発光装置 | |
JP6974702B2 (ja) | 半導体発光装置の製造方法 | |
WO2019069699A1 (ja) | 発光素子、蛍光光源装置 | |
US20230104659A1 (en) | Blue photon coupling improvement in layer-structured ceramic converter | |
JP6521119B2 (ja) | 発光装置 | |
JP6891450B2 (ja) | 発光装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20171031 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20171106 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180507 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180522 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6345266 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |