JP6257764B2 - 発光半導体コンポーネント及びその製造方法並びに当該発光半導体コンポーネントを備えた波長変換素子の製造方法 - Google Patents
発光半導体コンポーネント及びその製造方法並びに当該発光半導体コンポーネントを備えた波長変換素子の製造方法 Download PDFInfo
- Publication number
- JP6257764B2 JP6257764B2 JP2016527421A JP2016527421A JP6257764B2 JP 6257764 B2 JP6257764 B2 JP 6257764B2 JP 2016527421 A JP2016527421 A JP 2016527421A JP 2016527421 A JP2016527421 A JP 2016527421A JP 6257764 B2 JP6257764 B2 JP 6257764B2
- Authority
- JP
- Japan
- Prior art keywords
- grid
- light emitting
- emitting semiconductor
- ceramic
- conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000006243 chemical reaction Methods 0.000 title claims description 171
- 239000004065 semiconductor Substances 0.000 title claims description 79
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 238000000034 method Methods 0.000 title claims description 15
- 239000000463 material Substances 0.000 claims description 119
- 239000000919 ceramic Substances 0.000 claims description 49
- 230000005855 radiation Effects 0.000 claims description 43
- 229910010293 ceramic material Inorganic materials 0.000 claims description 26
- 230000003287 optical effect Effects 0.000 claims description 18
- 239000002245 particle Substances 0.000 claims description 17
- 230000008878 coupling Effects 0.000 claims description 14
- 238000010168 coupling process Methods 0.000 claims description 14
- 238000005859 coupling reaction Methods 0.000 claims description 14
- 239000011159 matrix material Substances 0.000 claims description 13
- 229920001296 polysiloxane Polymers 0.000 claims description 10
- 238000005245 sintering Methods 0.000 claims description 8
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 7
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 6
- 230000009466 transformation Effects 0.000 claims description 4
- 102100032047 Alsin Human genes 0.000 claims description 3
- 101710187109 Alsin Proteins 0.000 claims description 3
- 229910003564 SiAlON Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 claims description 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 3
- 229910052605 nesosilicate Inorganic materials 0.000 claims description 3
- 150000004762 orthosilicates Chemical class 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 150000001342 alkaline earth metals Chemical group 0.000 claims description 2
- 150000003568 thioethers Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 47
- 229910052761 rare earth metal Inorganic materials 0.000 description 13
- 150000002910 rare earth metals Chemical class 0.000 description 13
- 239000000126 substance Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 8
- 238000000926 separation method Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000011148 porous material Substances 0.000 description 3
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002223 garnet Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- PWHHVCGHBBQHRG-UHFFFAOYSA-N [O-2].[Al+3].[Y+3].[Lu+3] Chemical compound [O-2].[Al+3].[Y+3].[Lu+3] PWHHVCGHBBQHRG-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- -1 alkaline earth metal sulfide Chemical class 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- OFOSXJVLRUUEEW-UHFFFAOYSA-N aluminum;lutetium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Lu+3] OFOSXJVLRUUEEW-UHFFFAOYSA-N 0.000 description 1
- PCTXFKUTDJMZPU-UHFFFAOYSA-N aluminum;oxygen(2-);terbium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Tb+3] PCTXFKUTDJMZPU-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- GTDCAOYDHVNFCP-UHFFFAOYSA-N chloro(trihydroxy)silane Chemical class O[Si](O)(O)Cl GTDCAOYDHVNFCP-UHFFFAOYSA-N 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 239000006259 organic additive Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/7774—Aluminates
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- General Engineering & Computer Science (AREA)
- Led Device Packages (AREA)
- Luminescent Compositions (AREA)
- Optical Filters (AREA)
Description
− (AE)SiON,(AE)SiAlON,(AE)AlSiN3,(AE)2Si5N8、ただしAEは、アルカリ土類金属、
− 硫化物、
− オルソシリケート
を含み得る。
− 反射層は、放射形成エピタキシャル層列の(支持基板側を向いた)第1主面に載置または形成され、この反射層は、エピタキシャル層列で形成された電磁放射の少なくとも一部をこれに反射して戻し、
− エピタキシャル層列は、20μm以下の範囲の、特に4μmと10μmと間の範囲の厚さを有し、
− エピタキシャル層列には、混合構造を備えた少なくとも1つの領域を有する少なくとも1つの半導体層列が含まれており、ここでは理想的にもこの混合構造によってエピタキシャル層列内で光の近似的なエルゴード分布が発生し、すなわち、これは可能な限りにエルゴード的確率的な散乱挙動を有するのである。
Claims (15)
- 発光半導体チップ(20)と、セラミックグリッド材料(1)を有する波長変換素子(10)とを備えた発光半導体コンポーネント(100)であって、
前記発光半導体チップ(20)は、互いに独立して駆動可能な複数の発光セグメントを有しており、前記複数の発光セグメントは、それぞれ、光結合出力面の関連する放射領域を介して1次放射を放出し、
前記セラミックグリッド材料(1)は、複数の開口部(3)を有するグリッド(2)を形成しており、当該開口部(3)は、前記グリッド(2)の主延在面(9)において前記セラミックグリッド材料(1)によって取り囲まれており、かつ、当該開口部(3)は、前記グリッド(2)の前記主延在面(9)に対して垂直な方向に前記グリッド(2)を通って延在しており、
前記開口部(3)に変換セグメント(4)が充填されており、
前記グリッド(2)は、紫外光および/または可視光に対して非透過であり、
前記変換セグメント(4)は、前記発光半導体チップの前記発光セグメントの上方に配置されている、
ことを特徴とする発光半導体コンポーネント(100)。 - 前記グリッド(2)は、紫外光および/または可視光に対して反射性を有する、
請求項1に記載の発光半導体コンポーネント(100)。 - 前記セラミックグリッド材料(1)には、YAG,Al2O3,Y2O3,TiO2,AlNのうちの1つまたは複数の材料から選択されかつドーピングされていないセラミック材料が含まれる、
請求項1または2に記載の発光半導体コンポーネント(100)。 - 前記セラミックグリッド材料(1)とは異なる屈折率を有する孔または放射反射粒子が、当該セラミックグリッド材料(1)内に配置されている、
請求項1から3までのいずれか1項に記載の発光半導体コンポーネント(100)。 - 前記放射反射粒子にAl2O3,SiO2,TiO2,ZrO2のうちの少なくとも1つの材料が含まれている、
請求項4に記載の発光半導体コンポーネント(100)。 - 前記グリッド(2)は、前記変換セグメント(4)よりも厚い、
請求項1から5までのいずれか1項に記載の発光半導体コンポーネント(100)。 - 前記変換セグメント(4)には、YAG:Ce,LuAG:Ce,LuYAG:Ceのうちの1つまたは複数の材料から選択されかつドーピングされたセラミック材料が含まれている、
請求項1から6までのいずれか1項に記載の発光半導体コンポーネント(100)。 - 前記ドーピングされたセラミック材料は、0.1%以上かつ4%以下のCe含有量を有する、
請求項7に記載の発光半導体コンポーネント(100)。 - 前記変換セグメント(4)には、
・ (AE)SiON,(AE)SiAlON,(AE)AlSiN3,(AE)2Si5N8,ただしAEは、アルカリ土類金属である、
・ 硫化物、
・ オルトシリケート
から選択された1つまたは複数の材料が含有されている、
請求項1から8までのいずれか1項に記載の発光半導体コンポーネント(100)。 - 前記変換セグメント(4)には、シリコーンのマトリクス材料内の波長変換物質が含まれている、
請求項1から9までのいずれか1項に記載の発光半導体コンポーネント(100)。 - 入射1次放射が、前記変換セグメント(4)によって異なる2次放射に変換されるように、前記変換セグメント(4)が異なって設計される、請求項1から10までのいずれか1項に記載の発光半導体コンポーネント(100)。
- 第1開口部には第1変換材料が充填され、第2開口部には第2変換材料が充填され、前記第1変換材料は第1波長を有する放射を放出するために設けられており、前記第2変換材料は第2波長を有する放射を放出するために設けられており、前記第2波長は、前記第1波長と異なる、
請求項1から11までのいずれか1項に記載の発光半導体コンポーネント(100)。 - 波長変換素子を製造する方法において、
A) 未焼結のセラミックグリッド材料からなる層を作製するステップと、
B) 前記層内に複数の開口部を作製して、前記セラミックグリッド材料がグリッドを形成するようにするステップであって、当該グリッドでは、前記開口部が、前記グリッドの主延在面において前記セラミックグリッド材料によって取り囲まれており、かつ、前記開口部が、前記グリッドの前記主延在面に対して垂直な方向に前記グリッドを通って延在している、ステップと、
C) 前記開口部に、セラミック波長変換物質を含有するペースト状の未焼結の変換セグメント、または、未焼結のセラミック小板状の未焼結の変換セグメントを充填するステップと、
D) 連続した波長変換素子を形成するため、前記未焼結の変換セグメントを前記未焼結のセラミックグリッド材料と共に焼結するステップと
を有し、
前記焼結されたセラミックグリッド(2)は、紫外光および/または可視光に対して非透過である、
ことを特徴とする、波長変換素子を製造する方法。 - 前記グリッドを形成するため、前記未焼結のセラミックグリッド材料からなる複数の層は、1つの層が別の1つの層の上になるように載置される、
請求項13に記載の方法。 - 請求項1に記載の発光半導体コンポーネントを製造する方法であって、
前記波長変換素子を、請求項13に記載の方法によって製造し、引き続いて前記発光半導体チップの前記光結合出力面上に配置する、
ことを特徴とする、発光半導体コンポーネントを製造する方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361896888P | 2013-10-29 | 2013-10-29 | |
US61/896,888 | 2013-10-29 | ||
PCT/EP2014/073104 WO2015063077A1 (en) | 2013-10-29 | 2014-10-28 | Wavelength conversion element, method of making, and light-emitting semiconductor component having same |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016536791A JP2016536791A (ja) | 2016-11-24 |
JP6257764B2 true JP6257764B2 (ja) | 2018-01-10 |
Family
ID=51799100
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016527421A Expired - Fee Related JP6257764B2 (ja) | 2013-10-29 | 2014-10-28 | 発光半導体コンポーネント及びその製造方法並びに当該発光半導体コンポーネントを備えた波長変換素子の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20160268488A1 (ja) |
JP (1) | JP6257764B2 (ja) |
CN (1) | CN105684171B (ja) |
DE (1) | DE112014004933T5 (ja) |
WO (1) | WO2015063077A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI773915B (zh) * | 2019-02-27 | 2022-08-11 | 日商鎧俠股份有限公司 | 半導體裝置 |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11792898B2 (en) | 2012-07-01 | 2023-10-17 | Ideal Industries Lighting Llc | Enhanced fixtures for area lighting |
US11160148B2 (en) | 2017-06-13 | 2021-10-26 | Ideal Industries Lighting Llc | Adaptive area lamp |
US10374137B2 (en) * | 2014-03-11 | 2019-08-06 | Osram Gmbh | Light converter assemblies with enhanced heat dissipation |
JP6265227B2 (ja) * | 2015-05-15 | 2018-01-24 | 日亜化学工業株式会社 | 配光部材の製造方法、発光装置の製造方法、配光部材、及び発光装置 |
US10415795B2 (en) | 2015-05-15 | 2019-09-17 | Nichia Corporation | Method of manufacturing light distribution member with shielded individual transmissive pieces and light-shielding frame, method of manufacturing light emitting device having light distribution member, light distribution member, and light emitting device |
KR20180018659A (ko) * | 2015-06-08 | 2018-02-21 | 코닝 인코포레이티드 | 전달이 없는 마이크로엘이디 디스플레이 |
US10529696B2 (en) * | 2016-04-12 | 2020-01-07 | Cree, Inc. | High density pixelated LED and devices and methods thereof |
KR102529150B1 (ko) * | 2016-05-11 | 2023-05-03 | 삼성전자주식회사 | 광 변환 장치, 그 제조 방법, 및 이를 포함하는 광원 모듈과 백라이트 유닛 |
FR3048127A1 (fr) * | 2016-07-22 | 2017-08-25 | Commissariat Energie Atomique | Dispositif opto-electronique a couche de conversion comprenant une grille et procede de fabrication du dispositif |
JP6428730B2 (ja) * | 2016-08-24 | 2018-11-28 | 日亜化学工業株式会社 | 発光装置 |
FR3061608B1 (fr) * | 2016-12-29 | 2019-05-31 | Aledia | Dispositif optoelectronique a diodes electroluminescentes |
WO2018139866A1 (ko) * | 2017-01-26 | 2018-08-02 | 주식회사 엘지화학 | 마이크로 led 및 이를 포함하는 디스플레이 장치 |
CN106887486B (zh) * | 2017-03-03 | 2019-11-15 | 中国科学院宁波材料技术与工程研究所 | 用于白光led器件的条形码结构荧光陶瓷及其制备方法与应用 |
JP2018145318A (ja) * | 2017-03-07 | 2018-09-20 | セイコーエプソン株式会社 | 波長変換部材、波長変換素子、照明装置及びプロジェクター |
CN108573660B (zh) * | 2017-03-12 | 2021-04-09 | 美科米尚技术有限公司 | 显示装置 |
JP2018166159A (ja) * | 2017-03-28 | 2018-10-25 | キヤノン株式会社 | デバイスおよび電子機器、輸送機器 |
FR3065322B1 (fr) * | 2017-04-18 | 2019-06-14 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de realisation d'un dispositif d'affichage a matrice de leds |
DE102017113375A1 (de) * | 2017-06-19 | 2018-12-20 | Schreiner Group Gmbh & Co. Kg | Folienaufbau mit Erzeugen von sichtbarem Licht mittels LED-Technologie |
DE102017113380A1 (de) | 2017-06-19 | 2018-12-20 | Schreiner Group Gmbh & Co. Kg | Folienaufbau mit Erzeugen von sichtbarem Licht mittels LED-Technologie |
US10734363B2 (en) | 2017-08-03 | 2020-08-04 | Cree, Inc. | High density pixelated-LED chips and chip array devices |
CN112305844B (zh) * | 2017-08-03 | 2022-03-01 | 深圳光峰科技股份有限公司 | 荧光芯片及其制造方法和发光装置 |
CN111052387B (zh) | 2017-08-03 | 2023-11-28 | 科锐Led公司 | 高密度像素化的led芯片和芯片阵列装置及制造方法 |
CN109838763B (zh) * | 2017-09-13 | 2021-04-30 | 深圳光峰科技股份有限公司 | 一种波长转换装置及其制备方法 |
JP6909695B2 (ja) * | 2017-10-02 | 2021-07-28 | 株式会社小糸製作所 | 波長変換部材および光源モジュール |
CN109755355B (zh) * | 2017-11-02 | 2021-12-07 | 深圳光峰科技股份有限公司 | 波长转换元件及其制备方法 |
US11335835B2 (en) * | 2017-12-20 | 2022-05-17 | Lumileds Llc | Converter fill for LED array |
DE102018111637A1 (de) | 2018-01-26 | 2019-08-01 | Osram Opto Semiconductors Gmbh | Optoelektronischer halbleiterchip, verfahren zur herstellung eines optoelektronischen bauelements und optoelektronisches bauelement |
US10529773B2 (en) | 2018-02-14 | 2020-01-07 | Cree, Inc. | Solid state lighting devices with opposing emission directions |
CN108538858B (zh) * | 2018-04-20 | 2020-12-18 | 哈尔滨工业大学深圳研究生院 | 一种半导体的显示方法 |
DE102018111417A1 (de) | 2018-05-14 | 2019-11-14 | Osram Opto Semiconductors Gmbh | Konversionselement, optoelektronisches bauteil, verfahren zur herstellung einer vielzahl von konversionselementen, verfahren zur herstellung einer vielzahl von optoelektronischen bauteilen und verfahren zur herstellung eines optoelektronischen bauteils |
DE102018118808A1 (de) * | 2018-08-02 | 2020-02-06 | Osram Opto Semiconductors Gmbh | Verfahren zur herstellung eines bauteils und optoelektronisches bauteil |
US10360825B1 (en) | 2018-09-24 | 2019-07-23 | Innolux Corporation | Flexible electronic device |
DE102018125506A1 (de) * | 2018-10-15 | 2020-04-16 | Osram Opto Semiconductors Gmbh | Optoelektronische Vorrichtung und Verfahren zur Herstellung von optoelektronischen Vorrichtungen |
US11201267B2 (en) | 2018-12-21 | 2021-12-14 | Lumileds Llc | Photoresist patterning process supporting two step phosphor-deposition to form an LED matrix array |
US10903265B2 (en) | 2018-12-21 | 2021-01-26 | Cree, Inc. | Pixelated-LED chips and chip array devices, and fabrication methods |
CN114127926A (zh) | 2019-04-18 | 2022-03-01 | 亮锐控股有限公司 | 照明设备 |
US11817526B2 (en) | 2019-10-29 | 2023-11-14 | Creeled, Inc. | Texturing for high density pixelated-LED chips and chip array devices |
DE102020101470A1 (de) | 2020-01-22 | 2021-07-22 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Bauelement mit konverterschicht und verfahren zur herstellung eines bauelements |
US11437548B2 (en) | 2020-10-23 | 2022-09-06 | Creeled, Inc. | Pixelated-LED chips with inter-pixel underfill materials, and fabrication methods |
US20220254962A1 (en) * | 2021-02-11 | 2022-08-11 | Creeled, Inc. | Optical arrangements in cover structures for light emitting diode packages and related methods |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4792726B2 (ja) * | 2003-10-30 | 2011-10-12 | 日亜化学工業株式会社 | 半導体素子用支持体の製造方法 |
JP4546176B2 (ja) * | 2004-07-16 | 2010-09-15 | 京セラ株式会社 | 発光装置 |
US7321193B2 (en) * | 2005-10-31 | 2008-01-22 | Osram Opto Semiconductors Gmbh | Device structure for OLED light device having multi element light extraction and luminescence conversion layer |
JP4837045B2 (ja) * | 2006-10-12 | 2011-12-14 | パナソニック株式会社 | 発光装置及びその製造方法 |
JP2011520281A (ja) * | 2008-05-07 | 2011-07-14 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 発光材料を含む自己支持型格子を有するledを備えた照明装置及び自己支持型格子を作製する方法 |
GB2461346B (en) * | 2008-07-04 | 2013-02-13 | Smiths Group Plc | Electrical connectors |
JP5119396B2 (ja) * | 2008-08-18 | 2013-01-16 | 日新イオン機器株式会社 | 熱陰極およびそれを備えるイオン源 |
DE102008062933B4 (de) | 2008-12-23 | 2021-05-12 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronische Projektionsvorrichtung |
US20100244065A1 (en) * | 2009-03-30 | 2010-09-30 | Koninklijke Philips Electronics N.V. | Semiconductor light emitting device grown on an etchable substrate |
WO2010134331A1 (en) * | 2009-05-22 | 2010-11-25 | Panasonic Corporation | Semiconductor light-emitting device and light source device using the same |
US20110024954A1 (en) * | 2009-07-28 | 2011-02-03 | E. I. Du Pont De Nemours And Company | Modified poly(hydroxyalkanoic acid) composition |
DE102009047788A1 (de) | 2009-09-30 | 2011-03-31 | Osram Opto Semiconductors Gmbh | Beleuchtungseinrichtung für eine Kamera sowie Verfahren zum Betrieb derselben |
US8304797B2 (en) * | 2010-07-29 | 2012-11-06 | Osram Sylvania Inc. | Light emitting diode light source having a ceramic substrate |
US9638396B2 (en) * | 2010-11-18 | 2017-05-02 | Nippon Electric Glass Co., Ltd. | Wavelength conversion element and light source provided with same |
JP2013102078A (ja) * | 2011-11-09 | 2013-05-23 | Stanley Electric Co Ltd | 光源装置および照明装置 |
JP6098439B2 (ja) * | 2013-08-28 | 2017-03-22 | 日亜化学工業株式会社 | 波長変換部材、発光装置、及び発光装置の製造方法 |
JP6345266B2 (ja) * | 2014-03-10 | 2018-06-20 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 波長変換素子、波長変換素子を含む発光半導体コンポーネント、波長変換素子の製造方法、および波長変換素子を含む発光半導体コンポーネントの製造方法 |
-
2014
- 2014-10-28 WO PCT/EP2014/073104 patent/WO2015063077A1/en active Application Filing
- 2014-10-28 JP JP2016527421A patent/JP6257764B2/ja not_active Expired - Fee Related
- 2014-10-28 US US15/033,165 patent/US20160268488A1/en not_active Abandoned
- 2014-10-28 CN CN201480060009.XA patent/CN105684171B/zh not_active Expired - Fee Related
- 2014-10-28 DE DE112014004933.6T patent/DE112014004933T5/de not_active Withdrawn
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI773915B (zh) * | 2019-02-27 | 2022-08-11 | 日商鎧俠股份有限公司 | 半導體裝置 |
Also Published As
Publication number | Publication date |
---|---|
CN105684171B (zh) | 2018-09-07 |
US20160268488A1 (en) | 2016-09-15 |
JP2016536791A (ja) | 2016-11-24 |
CN105684171A (zh) | 2016-06-15 |
DE112014004933T5 (de) | 2016-07-21 |
WO2015063077A1 (en) | 2015-05-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6257764B2 (ja) | 発光半導体コンポーネント及びその製造方法並びに当該発光半導体コンポーネントを備えた波長変換素子の製造方法 | |
US9728678B2 (en) | Light emitting element and method of manufacturing the same | |
CN101366126B (zh) | 用于发光器件的发光陶瓷层 | |
CN105423238B (zh) | 波长变换部件、发光装置、投影机、以及波长变换部件的制造方法 | |
JP6484982B2 (ja) | 発光装置の製造方法 | |
JP5521325B2 (ja) | 発光装置及びその製造方法 | |
JP6337859B2 (ja) | 発光装置 | |
KR101008762B1 (ko) | 발광 장치 및 그 제조 방법 | |
JP6223381B2 (ja) | セラミック変換素子、セラミック変換素子を備えた半導体チップおよびセラミック変換素子の製造方法 | |
CN104205374B (zh) | 具有波长转换侧面涂层的发光器件 | |
CN107004692B (zh) | 光电子半导体组件和用于制造光电子半导体组件的方法 | |
WO2015135839A1 (en) | Wavelength conversion element, light-emitting semiconductor component comprising a wavelength conversion element, method for producing a wavelength conversion element and method for producing a light-emitting semiconductor component comprising a wavelength conversion element | |
US11322659B2 (en) | Method for manufacturing wavelength conversion member, wavelength conversion member, and light-emitting device | |
KR20120086731A (ko) | 파장 변환된 반도체 발광 다이오드 | |
JP2010537420A (ja) | 反射型波長変換層を含む光源 | |
KR20100091992A (ko) | 발광장치 및 그 제조방법 | |
JP2016225515A (ja) | 発光装置 | |
KR102084285B1 (ko) | 세라믹 변환 소자, 광전자 반도체 소자 및 세라믹 변환 소자의 제조 방법 | |
CN102656713A (zh) | 发射辐射的半导体器件 | |
JP6015734B2 (ja) | 発光装置 | |
US9343636B2 (en) | Wavelength conversion element, light-emitting semiconductor device and display apparatus therewith, and method for producing a wavelength conversion element | |
JP6890556B2 (ja) | 波長変換発光デバイス | |
JP5644967B2 (ja) | 発光装置及びその製造方法 | |
US20240154076A1 (en) | Lumiphoric material structures for light-emitting diode packages and related methods | |
JP6521119B2 (ja) | 発光装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20170303 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170403 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20170630 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170830 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20171106 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20171205 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6257764 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |