JP6145131B2 - ポンプシステム、二酸化炭素供給システム、抽出システム、リソグラフィ装置、およびデバイス製造方法 - Google Patents
ポンプシステム、二酸化炭素供給システム、抽出システム、リソグラフィ装置、およびデバイス製造方法 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8158—With indicator, register, recorder, alarm or inspection means
- Y10T137/8326—Fluid pressure responsive indicator, recorder or alarm
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
- Y10T137/85978—With pump
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- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
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- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
‐放射ビームB(例えばUV放射またはDUV放射)を調整するように構成された照明システム(イルミネータ)ILと、
‐パターニングデバイス(例えばマスク)MAを支持するように構築され、かつ特定のパラメータに従ってパターニングデバイスMAを正確に位置決めするように構成された第
1のポジショナPMに接続されたサポート構造(例えばマスクテーブル)MTと、
‐基板(例えばレジストコートウェーハ)Wを保持するように構築され、かつ特定のパラメータに従って例えば基板Wのテーブルの表面を正確に位置決めするように構成された第2のポジショナPWに接続されたサポートテーブル(例えば1つ以上のセンサを支持するセンサテーブルまたは基板テーブルWT)と、
‐パターニングデバイスMAによって放射ビームBに付けられたパターンを基板Wのターゲット部分C(例えば1つ以上のダイを含む)上に投影するように構成された投影システム(例えば屈折投影レンズシステム)PSを含む。
マブルLCDパネルが含まれる。マスクは、リソグラフィでは周知であり、バイナリ、レべンソン型(alternating)位相シフト、およびハーフトーン型(attenuated)位相シフト等のマスク型、ならびに種々のハイブリッドマスク型を含む。プログラマブルミラーアレイの一例では、小型ミラーのマトリックス配列が用いられ、入射する放射ビームを様々な方向に反射させるように各小型ミラーを個別に傾斜させることができる。傾斜されたミラーは、ミラーマトリックスによって反射される放射ビームにパターンを付与する。
Claims (13)
- 投影システムの最終要素と対向表面との間の空間に液体を供給する流体ハンドリングシステムであって、前記空間内の液体のメニスカスの半径方向外側に第1のガス流を供給する第1のガスアウトレットを有する流体ハンドリングシステムと、
二酸化炭素を供給源から前記第1のガスアウトレットに供給する二酸化炭素供給システムと、
前記二酸化炭素供給システムから離れた温度調整された第2のガス流をオブジェクト上に供給する、前記第1のガスアウトレットの半径方向外側の第2のガスアウトレットであって、前記第2のガス流中のガスは、人間の安全に危険を及ぼさず、かつ、二酸化炭素を希釈可能である、第2のアウトレットと、
前記第2のガスアウトレットにおける又はその上流の流れ及び/又は圧力を検出するセンサを備える制御システムであって、前記センサからの信号が、前記第2のガスアウトレットにおける又はその上流の流れ及び/又は圧力が所定の大きさを下回ることを示すとき、前記第1のガス流の供給を停止する制御システムと、を備えるリソグラフィ装置。 - 前記センサは、前記第2のガスアウトレットにおける又はその上流のガスの特定の圧力又は流量にて切り換わる圧力又は流量スイッチである、請求項1に記載のリソグラフィ装置。
- 前記流体ハンドリングシステムの下で移動する少なくとも二つのテーブルを更に備える、請求項1に記載のリソグラフィ装置。
- 前記第2のガスアウトレットは、前記第2のガス流を、前記流体ハンドリングシステムによって覆われていない前記流体ハンドリングシステムの下のテーブル上のオブジェクトの領域に供給するように方向付けられている、請求項1に記載のリソグラフィ装置。
- 前記二酸化炭素供給システムは、
前記供給源から前記第1のガスアウトレットへの二酸化炭素の流れのための供給ラインと、
前記供給ラインにおけるバルブであって、前記供給ラインに沿ってガスが流れることができる開位置と、前記供給ラインに沿ったガス流が遮断される閉位置とを有するバルブとを備え、
前記制御システムは、
前記供給ラインにおけるガスの第1の流量又は圧力にて切り替わる、前記供給ラインにおける第1のスイッチと、
前記供給ラインにおけるガスの第2の流量又は圧力にて切り替わる、前記供給ラインにおける第2のスイッチと、を備え、
(i)前記第1のスイッチからの信号が、前記供給ラインにおけるガスが前記第1の流量又は圧力を上回ることを示すとき、又は(ii)前記第2のスイッチからの信号が、前記供給ラインにおけるガスが前記第2の流量又は圧力を下回ることを示すときに、前記バルブを前記開位置から前記閉位置に移動させ、
前記第2の流量又は圧力は前記第1の流量又は圧力より小さい、請求項1に記載のリソグラフィ装置。 - 前記供給ラインにおける質量流量コントローラを更に備える、請求項5に記載のリソグラフィ装置。
- 前記制御システムは、(i)前記第1のスイッチからの信号が、前記供給ラインにおけるガスが前記第1の流量又は圧力を上回ることを示すとき、又は(ii)前記第2のスイッチからの信号が、前記供給ラインにおけるガスが前記第2の流量又は圧力を下回ることを示すときに、前記質量流量コントローラをオフに切り替える、請求項6に記載のリソグラフィ装置。
- 前記流体ハンドリングシステムは、前記第1のガスアウトレットの半径方向外側にコレクタ開口を更に備える、請求項1に記載のリソグラフィ装置。
- 前記コレクタ開口の下流にセンサを更に備え、
前記制御システムは、前記センサからの信号が、前記コレクタ開口の下流の流れ及び/又は圧力が所定の範囲外であることを示すとき、前記第1のガス流を停止する、請求項8に記載のリソグラフィ装置。 - 前記コレクタ開口に接続する抽出システムを更に備える、請求項8又は請求項9に記載のリソグラフィ装置。
- 前記抽出システムは、前記コレクタ開口を介して、液体及びガスの混合物を抽出する、請求項10に記載のリソグラフィ装置。
- 前記混合物の前記ガスをリサイクル又はスクラブする機構を更に含む、請求項11に記載のリソグラフィ装置。
- 前記混合物の前記ガス及び前記液体を分離するための分離チャンバを更に備える、請求項11又は請求項12に記載のリソグラフィ装置。
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NL2005655A (en) | 2009-12-09 | 2011-06-14 | Asml Netherlands Bv | A lithographic apparatus and a device manufacturing method. |
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NL2009378A (en) * | 2011-10-07 | 2013-04-09 | Asml Netherlands Bv | Lithographic apparatus and method of cooling a component in a lithographic apparatus. |
US10122591B1 (en) * | 2013-03-13 | 2018-11-06 | Google Llc | Managing access to no-cost content |
CN104238277B (zh) * | 2013-06-19 | 2016-12-28 | 上海微电子装备有限公司 | 一种浸没式光刻机的流场维持方法 |
KR101408834B1 (ko) * | 2014-01-06 | 2014-06-20 | 한국지역난방공사 | 배기가스 정량 공급이 가능한 산업설비용 추기장치 |
JP2017538159A (ja) * | 2014-12-19 | 2017-12-21 | エーエスエムエル ネザーランズ ビー.ブイ. | 流体取扱構造、リソグラフィ装置及びデバイス製造方法 |
NL2017342A (en) * | 2015-08-31 | 2017-03-06 | Asml Netherlands Bv | A Gas Leak Detector and a Method of Detecting a Leak of Gas |
CN108027618B (zh) * | 2015-09-24 | 2021-01-29 | 株式会社富士金 | 压力式流量控制装置及其异常检测方法 |
CN107991384B (zh) * | 2017-12-21 | 2023-10-13 | 浙江启尔机电技术有限公司 | 一种微管内气液两相流流型的检测装置及方法 |
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2012
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- 2012-12-10 TW TW101146437A patent/TWI461860B/zh active
- 2012-12-12 JP JP2012271675A patent/JP6010445B2/ja active Active
- 2012-12-13 US US13/714,205 patent/US9575406B2/en active Active
- 2012-12-17 CN CN201210548141.8A patent/CN103176367B/zh active Active
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CN103176367A (zh) | 2013-06-26 |
KR20130071407A (ko) | 2013-06-28 |
CN103176367B (zh) | 2016-02-03 |
KR101410847B1 (ko) | 2014-06-23 |
US20130155380A1 (en) | 2013-06-20 |
JP2015146047A (ja) | 2015-08-13 |
JP2013131746A (ja) | 2013-07-04 |
US9575406B2 (en) | 2017-02-21 |
NL2009899A (en) | 2013-06-24 |
TWI461860B (zh) | 2014-11-21 |
JP6010445B2 (ja) | 2016-10-19 |
TW201335723A (zh) | 2013-09-01 |
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