JP6092857B2 - 流路部材ならびにこれを用いた吸着装置および冷却装置 - Google Patents
流路部材ならびにこれを用いた吸着装置および冷却装置 Download PDFInfo
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- JP6092857B2 JP6092857B2 JP2014518391A JP2014518391A JP6092857B2 JP 6092857 B2 JP6092857 B2 JP 6092857B2 JP 2014518391 A JP2014518391 A JP 2014518391A JP 2014518391 A JP2014518391 A JP 2014518391A JP 6092857 B2 JP6092857 B2 JP 6092857B2
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F21/00—Constructions of heat-exchange apparatus characterised by the selection of particular materials
- F28F21/04—Constructions of heat-exchange apparatus characterised by the selection of particular materials of ceramic; of concrete; of natural stone
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
- F28D15/00—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
- F28F13/06—Arrangements for modifying heat-transfer, e.g. increasing, decreasing by affecting the pattern of flow of the heat-exchange media
- F28F13/12—Arrangements for modifying heat-transfer, e.g. increasing, decreasing by affecting the pattern of flow of the heat-exchange media by creating turbulence, e.g. by stirring, by increasing the force of circulation
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F7/00—Elements not covered by group F28F1/00, F28F3/00 or F28F5/00
- F28F7/02—Blocks traversed by passages for heat-exchange media
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
- F28D21/00—Heat-exchange apparatus not covered by any of the groups F28D1/00 - F28D20/00
- F28D2021/0019—Other heat exchangers for particular applications; Heat exchange systems not otherwise provided for
- F28D2021/0028—Other heat exchangers for particular applications; Heat exchange systems not otherwise provided for for cooling heat generating elements, e.g. for cooling electronic components or electric devices
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F2255/00—Heat exchanger elements made of materials having special features or resulting from particular manufacturing processes
- F28F2255/18—Heat exchanger elements made of materials having special features or resulting from particular manufacturing processes sintered
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Jigs For Machine Tools (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
2 被処理物
3 凹部
4 本体
5 多孔質体
6 第1流路
7 第2流路
8 排気口
9 吸引口
10 凸部
11 曲部
12 空隙
13 接合界面
Claims (8)
- 流体が流れる流路が内部に形成されたセラミック焼結体からなる本体を備え、
該本体は、前記流路の内壁に、前記セラミック焼結体の一部からなる凸部を有する流路部材であって、
前記凸部は、前記流路の長手方向に沿った細長形状であり、
前記流路は、平面視において細長形状であるとともに、少なくとも一部に曲がった曲部を有しており、
前記本体は、前記曲部において、前記流路の長手方向に沿って互いに離れた複数の前記凸部を有することを特徴とする流路部材。 - 流体が流れる流路が内部に形成されたセラミック焼結体からなる本体を備え、
該本体は、前記流路の内壁に、前記セラミック焼結体の一部からなる凸部を有し、前記凸部は、内部に閉気孔である空隙を有することを特徴とする流路部材。 - 請求項1または請求項2に記載の流路部材において、
前記本体は、前記流路の長手方向に垂直な断面において、前記流路の内壁に、互いに対向する一対の前記凸部を有することを特徴とする流路部材。 - 請求項1乃至請求項3のいずれかに記載の流路部材において、
前記流路は、長手方向に垂直な断面において、矩形状であり、
前記本体は、前記流路の長手方向に垂直な断面において、前記流路の角部に前記凸部を有することを特徴とする流路部材。 - 請求項4に記載の流路部材において、
前記凸部の表面は、前記流路の長手方向に垂直な断面において、凸曲線状であることを特徴とする流路部材。 - 請求項1乃至請求項5のいずれかに記載の流路部材において、
前記流路は、長手方向に垂直な断面において、円形状であり、
前記本体は、前記流路の長手方向に垂直な断面において、前記流路の内壁に、前記流路の中心を挟んで互いに対向する一対の前記凸部を有することを特徴とする流路部材。 - 被処理物を吸着する、請求項1乃至請求項6のいずれかに記載の流路部材と、前記流路部材の流路に前記流体を供給する流体供給手段とを備えたことを特徴とする吸着装置。
- 対象物を冷却する、請求項1乃至請求項7のいずれかに記載の流路部材と、該流路部材の流路に冷却用流体である前記流体を供給する流体供給手段とを備えたことを特徴とする冷却装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014518391A JP6092857B2 (ja) | 2012-05-30 | 2013-05-21 | 流路部材ならびにこれを用いた吸着装置および冷却装置 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012123084 | 2012-05-30 | ||
JP2012123084 | 2012-05-30 | ||
JP2014518391A JP6092857B2 (ja) | 2012-05-30 | 2013-05-21 | 流路部材ならびにこれを用いた吸着装置および冷却装置 |
PCT/JP2013/063997 WO2013179936A1 (ja) | 2012-05-30 | 2013-05-21 | 流路部材ならびにこれを用いた吸着装置および冷却装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2013179936A1 JPWO2013179936A1 (ja) | 2016-01-18 |
JP6092857B2 true JP6092857B2 (ja) | 2017-03-08 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014518391A Active JP6092857B2 (ja) | 2012-05-30 | 2013-05-21 | 流路部材ならびにこれを用いた吸着装置および冷却装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10480873B2 (ja) |
EP (1) | EP2858104B1 (ja) |
JP (1) | JP6092857B2 (ja) |
WO (1) | WO2013179936A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI506680B (zh) * | 2013-02-22 | 2015-11-01 | Nissin Ion Equipment Co Ltd | Substrate cooling means and irradiating ion beam |
JP6673642B2 (ja) * | 2015-03-30 | 2020-03-25 | 京セラ株式会社 | 管状体 |
US10486232B2 (en) | 2015-04-21 | 2019-11-26 | Varian Semiconductor Equipment Associates, Inc. | Semiconductor manufacturing device with embedded fluid conduits |
CN108369931B (zh) * | 2015-12-18 | 2021-06-18 | 京瓷株式会社 | 流路构件以及半导体模块 |
JP7143021B2 (ja) * | 2018-07-09 | 2022-09-28 | 株式会社ディスコ | ポーラスチャックテーブル、ポーラスチャックテーブルの製造方法、及び、加工装置 |
JP7308035B2 (ja) * | 2019-01-09 | 2023-07-13 | 日本特殊陶業株式会社 | 静電チャック |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2000108020A (ja) | 1998-09-30 | 2000-04-18 | Ibiden Co Ltd | 積層セラミック構造物及びその製造方法 |
ATE487564T1 (de) * | 1999-06-15 | 2010-11-15 | Ibiden Co Ltd | Wafer poliermaschinentisch, wafer polierverfahren und halbleiterschleife herstellungsverfahren |
JP4209057B2 (ja) * | 1999-12-01 | 2009-01-14 | 東京エレクトロン株式会社 | セラミックスヒーターならびにそれを用いた基板処理装置および基板処理方法 |
JP4034096B2 (ja) * | 2002-03-19 | 2008-01-16 | 日本碍子株式会社 | 半導体支持装置 |
US20040040664A1 (en) * | 2002-06-03 | 2004-03-04 | Yang Jang Gyoo | Cathode pedestal for a plasma etch reactor |
JP4107643B2 (ja) | 2002-07-23 | 2008-06-25 | 日本碍子株式会社 | 接合体の製造方法 |
US7722828B2 (en) * | 2005-12-30 | 2010-05-25 | Geo2 Technologies, Inc. | Catalytic fibrous exhaust system and method for catalyzing an exhaust gas |
JP2008004926A (ja) | 2006-05-24 | 2008-01-10 | Sumitomo Electric Ind Ltd | ウエハ保持体とその製造方法及び半導体製造装置 |
US20090283034A1 (en) | 2006-05-24 | 2009-11-19 | Sumitomo Electric Industries, Ltd. | Wafer holder, manufacturing method thereof and semiconductor manufacturing apparatus |
JP5050241B2 (ja) * | 2007-01-29 | 2012-10-17 | 株式会社Kelk | 流体温調装置 |
JP4898556B2 (ja) * | 2007-05-23 | 2012-03-14 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
JP4986830B2 (ja) * | 2007-12-07 | 2012-07-25 | 日本碍子株式会社 | 基板保持体及びその製造方法 |
JP5015085B2 (ja) * | 2008-07-15 | 2012-08-29 | シャープ株式会社 | 気相成長装置 |
JP4886876B2 (ja) * | 2010-05-31 | 2012-02-29 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理方法 |
JP2012049453A (ja) * | 2010-08-30 | 2012-03-08 | Kyocera Corp | 光照射デバイス、光照射モジュール、および印刷装置 |
US9448014B2 (en) * | 2011-10-28 | 2016-09-20 | Kyocera Corporation | Channel member, and heat exchanger, semiconductor unit, and semiconductor manufacturing apparatus including the same |
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2013
- 2013-05-21 JP JP2014518391A patent/JP6092857B2/ja active Active
- 2013-05-21 EP EP13798153.6A patent/EP2858104B1/en active Active
- 2013-05-21 US US14/403,848 patent/US10480873B2/en active Active
- 2013-05-21 WO PCT/JP2013/063997 patent/WO2013179936A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2013179936A1 (ja) | 2013-12-05 |
EP2858104A1 (en) | 2015-04-08 |
EP2858104B1 (en) | 2020-07-29 |
JPWO2013179936A1 (ja) | 2016-01-18 |
EP2858104A4 (en) | 2016-01-13 |
US10480873B2 (en) | 2019-11-19 |
US20150122464A1 (en) | 2015-05-07 |
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