JP6024755B2 - 半導体受光素子及びその製造方法 - Google Patents
半導体受光素子及びその製造方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims description 90
- 238000010521 absorption reaction Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 description 51
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 45
- 229910052751 metal Inorganic materials 0.000 description 25
- 239000002184 metal Substances 0.000 description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 23
- 229910052814 silicon oxide Inorganic materials 0.000 description 23
- 230000005684 electric field Effects 0.000 description 20
- 229920002120 photoresistant polymer Polymers 0.000 description 18
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- 230000035945 sensitivity Effects 0.000 description 16
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- 239000000463 material Substances 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 11
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 10
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- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 8
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- 239000002994 raw material Substances 0.000 description 7
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- 238000000151 deposition Methods 0.000 description 6
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- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 5
- 229910052790 beryllium Inorganic materials 0.000 description 4
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
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- 239000003054 catalyst Substances 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 239000011593 sulfur Substances 0.000 description 3
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 2
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- 238000011835 investigation Methods 0.000 description 2
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- 238000007740 vapor deposition Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000000098 azimuthal photoelectron diffraction Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
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- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
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- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000009291 secondary effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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Description
第1実施形態による半導体受光素子及びその製造方法について図1乃至図9を用いて説明する。
式(1)の関係をもとにして検討した結果、本願発明者等は、本実施形態による半導体受光素子を用いることで、光吸収量を低下させることなく、受光面積を縮小できることをも新たに見出した。
図3に、典型的な直接遷移型半導体を想定した、光吸収係数aが10−4cm−1の光吸収層を用いた場合における、柱状構造体20に対する光吸収層24の面積の割合に対する増大係数を計算した結果を示す。図3の計算例は、光吸収層の膜厚が0.8μmの平面受光型の半導体受光素子(比較例)と比較したものであり、柱状構造体20の長さを4μmとして計算を行った。
本実施形態による半導体受光素子は、以下の副次的な効果がある。第1点は、pn接合方向で見たときに光吸収層24の膜厚が薄いため、高速応答が可能という点である。第2点は、やはりpn接合方向で見たときに光吸収層24が薄いため、低い逆バイアスで動作が可能となる点である。効果の程度としては、同じ電界をかけるために必要なバイアスは膜厚に比例することから、本実施形態による半導体受光素子の径方向の膜厚が従来型の膜厚の1/2となれば、バイアスも半分に低減することが可能となる。第3点は、円筒状にpn接合が形成されているため、漏れ電流が抑制できる点である。
r1/r0=500/100=5>exp(104/2×104)
となり、式(3)の関係を満たす。
第2実施形態による半導体受光素子及びその製造方法について図10を用いて説明する。図1乃至図9に示す第1実施形態による半導体受光素子と同様の構成要素には同一の符号を付し説明を省略し又は簡潔にする。
第3実施形態による半導体受光素子及びその製造方法について図11を用いて説明する。図1乃至図10に示す第1及び第2実施形態による半導体受光素子と同様の構成要素には同一の符号を付し説明を省略し又は簡潔にする。
第4実施形態による半導体受光素子及びその製造方法について図12を用いて説明する。図1乃至図11に示す第1乃至第3実施形態による半導体受光素子と同様の構成要素には同一の符号を付し説明を省略し又は簡潔にする。
第5実施形態による半導体受光素子及びその製造方法について図13乃至図22を用いて説明する。図1乃至図12に示す第1乃至第4実施形態による半導体受光素子と同様の構成要素には同一の符号を付し説明を省略し又は簡潔にする。
第6実施形態による半導体受光素子及びその製造方法について図23及び図24を用いて説明する。図1乃至図21に示す第1乃至第5実施形態による半導体受光素子と同様の構成要素には同一の符号を付し説明を省略し又は簡潔にする。
第7実施形態による半導体受光素子及びその製造方法について図25乃至図29を用いて説明する。図1乃至図24に示す第1乃至第6実施形態による半導体受光素子と同様の構成要素には同一の符号を付し説明を省略し又は簡潔にする。
上記実施形態に限らず種々の変形が可能である。
10A…n−InP基板
10B…n−Si基板
12…マスク膜
14,34…ガードリング
16,36…絶縁膜
16A,16B,56…シリコン酸化膜
18,76…金属微粒子
20…柱状構造体
20A…n−InP柱状構造体
20B…n−Si柱状構造体
22…第1導電型半導体層
24…光吸収層
24A…InGaAs光吸収層
24B…SiGe光吸収層
26…グレーデッド層
28…電界降下層
30…キャリア増倍層
32…第2導電型半導体層
32A…p−InP層
32B…p−Si層
38…第2導電型電極
38A,38B…p型電極
42…レジスト膜
44…第1導電型電極
44A,44B…n型電極
46…レンズ
48…無反射膜
50…基板
52…フレネルレンズ
54,64…高屈折差グレーティング
58…パターン
60…半導体基板
62…光導波路
66…ミラー
68…パッド部
70…半絶縁性GaAs基板
72…n−GaAs層
74…絶縁膜
78…n−GaAs柱状構造体
80…活性層
82…n−GaAs層
84…開口部
86…フォトレジスト膜
88…金属膜
90,94…電極
92…レジスト膜
Claims (7)
- 第1導電型の半導体基板と、
前記半導体基板の第1の表面上に形成された前記第1導電型の半導体よりなる柱状構造体と、
前記柱状構造体を囲うように形成された光吸収層と、
前記光吸収層を囲うように形成された半導体層と、
前記半導体基板の第2の表面上に形成された第1の電極と、
前記半導体層の側面部分の周囲に形成された第2の電極と、
を有し、
前記第2の電極は、前記半導体層の側面部分から前記柱状構造体、前記光吸収層及び前記半導体層の上面上に延在して形成されており、前記上面においてミラーを形成している
ことを特徴とする半導体受光素子。 - 請求項1記載の半導体受光素子において、
前記光吸収層と前記半導体層との間に形成されたキャリア増倍層を更に有する
ことを特徴とする半導体受光素子。 - 請求項2記載の半導体受光素子において、
前記光吸収層と前記キャリア増倍層との間に形成されたグレーデッド層と電界降下層とを更に有する
ことを特徴とする半導体受光素子。 - 請求項1乃至3のいずれか1項に記載の半導体受光素子において、
前記半導体基板の第2の表面に形成され、前記光吸収層に入射する光を集光する集光手段を更に有する
ことを特徴とする半導体受光素子。 - 請求項1乃至4のいずれか1項に記載の半導体受光素子において、
前記柱状構造体の半径をr0、前記光吸収層の外周の半径をr1、前記光吸収層の吸収係数をaとして、
r1/r0>exp(a/2×104)
の関係を有する
ことを特徴とする半導体受光素子。 - 請求項1記載の半導体受光素子において、
前記光吸収層は、前記柱状構造体を囲うように形成された筒状の量子井戸層を含む
ことを特徴とする半導体受光素子。 - 第1導電型の半導体基板の第1の表面上に、前記第1導電型の半導体よりなる柱状構造体を形成する工程と、
前記柱状構造体を囲うように光吸収層を形成する工程と、
前記光吸収層を囲うように半導体層を形成する工程と、
前記半導体基板の第2の表面上に第1の電極を形成する工程と、
前記半導体層の側面部分の周囲に第2の電極を形成する工程と、
を有し、
前記第2の電極を形成する工程において、前記第2の電極は、前記半導体層の側面部分から前記柱状構造体、前記光吸収層及び前記半導体層の上面上に延在して形成され、前記上面においてミラーを形成する
ことを特徴とする半導体受光素子の製造方法。
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