JP5874723B2 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- JP5874723B2 JP5874723B2 JP2013515238A JP2013515238A JP5874723B2 JP 5874723 B2 JP5874723 B2 JP 5874723B2 JP 2013515238 A JP2013515238 A JP 2013515238A JP 2013515238 A JP2013515238 A JP 2013515238A JP 5874723 B2 JP5874723 B2 JP 5874723B2
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- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
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Description
本発明の実施の形態にかかるフィールドストップ型IGBT(FS−IGBT)について、例えば耐圧1700Vのトレンチ型FS−IGBTを例に図1,6などを参照して詳細に説明する。図1は、本発明の実施の形態にかかるFS−IGBTの構成を示す要部断面図である。図6は、本発明の実施の形態にかかるFS−IGBTの不純物濃度分布を示す特性図である。図6には、トレンチ型FS−IGBTを構成するシリコン(Si)基板(半導体基体)の裏面からn-ドリフト層1にかけての不純物濃度分布を示す(図7についても同様)。
4 n+エミッタ領域
5 pベース層
6 p+コンタクト領域
7 ゲート電極
8 コレクタ電極
9 エミッタ電極
10 ゲート絶縁膜
11 トレンチ
12 トレンチMOS構造
13 n+バッファ層
14 nFS層
15 p+コレクタ層
16 裾部分
Claims (13)
- 第1導電型半導体基体からなる第1導電型ドリフト層と、
前記第1導電型半導体基体の一方の主面の表面層に形成された第2導電型ベース層と、
前記第2導電型ベース層の、前記第1導電型半導体基体の一方の主面側の表面層に形成された第1導電型エミッタ層と、
前記第1導電型半導体基体の一方の主面に設けられ、前記第1導電型エミッタ層、前記第2導電型ベース層および前記第1導電型ドリフト層に接するゲート絶縁膜と、
前記ゲート絶縁膜を介して、前記第1導電型エミッタ層、前記第2導電型ベース層および前記第1導電型ドリフト層に対向するゲート電極と、
前記第1導電型ドリフト層、前記第2導電型ベース層、前記第1導電型エミッタ層、前記ゲート絶縁膜、前記ゲート電極からなるMOSゲート構造と、
前記第1導電型半導体基体の他方の主面に設けられた第2導電型コレクタ層と、
前記第1導電型ドリフト層と前記第2導電型コレクタ層との間に設けられた、前記第1導電型ドリフト層よりも不純物濃度が高い第1導電型フィールドストップ層と、
前記第1導電型フィールドストップ層と前記第2導電型コレクタ層との間に設けられた第1導電型バッファ層と、
を備え、
前記第1導電型フィールドストップ層のネットドーピング濃度は、前記第1導電型ドリフト層のネットドーピング濃度より高く、
前記第1導電型フィールドストップ層は、前記第1導電型バッファ層との境界側で最大となり、最大となる位置から前記第1導電型半導体基体の一方の主面側に向って濃度勾配の大きさが減少しながら不純物濃度が減少する不純物濃度分布で前記第1導電型ドリフト層に達しており、
前記第1導電型フィールドストップ層の深さが20μm以上であり、
前記第1導電型バッファ層の最大不純物濃度は、前記第1導電型フィールドストップ層の最大不純物濃度より高い6×1015cm-3以上であり、かつ前記第2導電型コレクタ層の最大不純物濃度の1/10以下であり、
前記第1導電型フィールドストップ層の前記濃度勾配は、前記第1導電型半導体基体の一方の主面側に向うにしたがって小さくなっており、前記第1導電型半導体基体の一方の主面側に近い部分ほど、前記第1導電型半導体基体の一方の主面側に向って緩やかになっていることを特徴とする半導体装置。 - 前記第1導電型ドリフト層と前記第2導電型ベース層との間のpn接合の位置から、定格電圧の印加によって当該pn接合から前記第1導電型ドリフト層および前記第1導電型フィールドストップ層にわたって広がる空乏層の空乏層端の位置までの、前記第1導電型ドリフト層のネットドーピング濃度および前記第1導電型フィールドストップ層のネットドーピング濃度を積分した不純物総量は、前記空乏層端が前記第1導電型フィールドストップ層の内部に位置するに足る不純物総量であることを特徴とする請求項1に記載の半導体装置。
- 前記第1導電型フィールドストップ層の不純物濃度分布は、前記第2導電型コレクタ層側から前記第1導電型ドリフト層側へ急峻に不純物濃度が低くなるような第1濃度勾配を有し、かつ、前記第1濃度勾配を有する部分よりも前記第1導電型ドリフト層側の深い部分に、前記第1濃度勾配よりも前記第1導電型ドリフト層側へ緩やかに不純物濃度が低くなるような第2濃度勾配を有することを特徴とする請求項1または2に記載の半導体装置。
- 前記第2導電型コレクタ層の最大不純物濃度が6×10 16 cm -3 以上1×10 20 cm -3 以下であることを特徴とする請求項1〜3のいずれか一つに記載の半導体装置。
- 前記第1導電型フィールドストップ層のドーパントがセレンまたは硫黄であることを特徴とする請求項1〜4のいずれか一つに記載の半導体装置。
- 前記第1導電型バッファ層のドーパントがリンであることを特徴とする請求項1〜5のいずれか一つに記載の半導体装置。
- 前記第1導電型フィールドストップ層の最大不純物濃度が3×10 14 cm -3 以上3×10 15 cm -3 以下であることを特徴とする請求項1〜6のいずれか一つに記載の半導体装置。
- 前記第1導電型フィールドストップ層の濃度勾配の大きさが、前記第1導電型フィールドストップ層の最大不純物濃度の位置から前記第1導電型半導体基体の一方の主面側に向って段階的に小さくなることを特徴とする請求項1〜6のいずれか一つに記載の半導体装置。
- 定格電圧が1200V以上であることを特徴とする請求項6または7に記載の半導体装置。
- 第1導電型半導体基体からなる第1導電型ドリフト層と、前記第1導電型半導体基体の一方の主面側に設けられた少なくともゲート電極、ゲート絶縁膜および前記第1導電型半導体基体からなるMOSゲート構造と、前記第1導電型半導体基体の他方の主面に設けられた第2導電型コレクタ層と、前記第1導電型ドリフト層と前記第2導電型コレクタ層との間に設けられた、前記第1導電型ドリフト層よりも不純物濃度が高い第1導電型フィールドストップ層と、前記第1導電型フィールドストップ層と前記第2導電型コレクタ層との間に設けられた、前記第1導電型フィールドストップ層よりも不純物濃度が高い第1導電型バッファ層と、を備えた半導体装置の製造方法であって、
前記第1導電型半導体基体の一方の主面側に前記MOSゲート構造を形成するMOSゲート構造形成工程と、
前記第1導電型半導体基体の他方の主面を研削し、前記第1導電型半導体基体を所定の厚さまで薄くする薄板化工程と、
前記第1導電型半導体基体の研削した面に、前記第1導電型フィールドストップ層、前記第1導電型バッファ層および前記第2導電型コレクタ層を形成するためのそれぞれのドーパントをイオン注入する注入工程と、
前記第1導電型半導体基体の研削した面にイオン注入された複数の前記ドーパントを一括して電気的に活性化させるための熱処理を行う活性化工程と、
前記第1導電型半導体基体の一方の主面に金属電極膜をスパッタリングにより形成し熱処理を行う電極膜形成工程と、
を含み、
前記第1導電型フィールドストップ層が、前記第1導電型バッファ層との境界側で最大となり、最大となる位置から前記第1導電型半導体基体の一方の主面側に向って濃度勾配の大きさが減少しながら不純物濃度が減少する不純物濃度分布で前記第1導電型ドリフト層に達し、
かつ、前記第1導電型フィールドストップ層の前記濃度勾配が、前記第1導電型半導体基体の一方の主面側に向うにしたがって小さくなり、前記第1導電型半導体基体の一方の主面側に近い部分ほど、前記第1導電型半導体基体の一方の主面側に向って緩やかになるように、前記注入工程と前記活性化工程とを行い、
前記第1導電型フィールドストップ層を形成するための前記ドーパントはセレンまたは硫黄であることを特徴とする半導体装置の製造方法。 - 前記第1導電型フィールドストップ層の濃度勾配の大きさを、前記第1導電型フィールドストップ層の最大不純物濃度の位置から前記第1導電型半導体基体の一方の主面側に向って段階的に小さくすることを特徴とする請求項10に記載の半導体装置の製造方法。
- 前記注入工程では、複数の前記ドーパントとして、前記第1導電型フィールドストップ層を形成するためのセレン、前記第1導電型バッファ層を形成するためのリン、前記第2導電型コレクタ層を形成するためのボロンを順にイオン注入し、
前記活性化工程では、前記熱処理によって複数の前記ドーパントを同時に活性化させることを特徴とする請求項10または11に記載の半導体装置の製造方法。 - 前記第1導電型フィールドストップ層のネットドーピング濃度が前記第1導電型ドリフト層のネットドーピング濃度より高く、前記第1導電型フィールドストップ層のネットドーピング濃度と前記第1導電型ドリフト層のネットドーピング濃度との総量が、定格電圧の印加によって前記第1導電型ドリフト層および前記第1導電型フィールドストップ層を広がる空乏層の空乏層端が前記第1導電型フィールドストップ層の内部にあるような不純物量であり、前記第1導電型フィールドストップ層の不純物濃度分布が、前記第1導電型半導体基体の他方の主面側から一方の主面側に向って低くなるような濃度勾配を有し、前記第1導電型フィールドストップ層の深さが20μm以上であり、前記第1導電型バッファ層の最大不純物濃度が、前記第1導電型フィールドストップ層の最大不純物濃度より高い6×10 15 cm -3 以上であり、かつ前記第2導電型コレクタ層の最大不純物濃度の1/10以下となるように、前記注入工程と前記活性化工程とを行うことを特徴とする請求項10〜12のいずれか一つに記載の半導体装置の製造方法。
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Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2711986B1 (en) * | 2011-05-18 | 2020-08-19 | Fuji Electric Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
JP5817686B2 (ja) * | 2011-11-30 | 2015-11-18 | 株式会社デンソー | 半導体装置 |
WO2013141181A1 (ja) | 2012-03-23 | 2013-09-26 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
WO2014154858A1 (en) * | 2013-03-28 | 2014-10-02 | Abb Technology Ag | Method for manufacturing an insulated gate bipolar transistor |
CN107768427A (zh) * | 2013-06-12 | 2018-03-06 | 三菱电机株式会社 | 半导体装置 |
US9331197B2 (en) * | 2013-08-08 | 2016-05-03 | Cree, Inc. | Vertical power transistor device |
JP2015046502A (ja) * | 2013-08-28 | 2015-03-12 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
US10600903B2 (en) | 2013-09-20 | 2020-03-24 | Cree, Inc. | Semiconductor device including a power transistor device and bypass diode |
US10868169B2 (en) | 2013-09-20 | 2020-12-15 | Cree, Inc. | Monolithically integrated vertical power transistor and bypass diode |
CN104716039B (zh) * | 2013-12-13 | 2018-02-06 | 上海华虹宏力半导体制造有限公司 | 提高igbt性能的背面工艺制作方法 |
JP6194812B2 (ja) * | 2014-02-18 | 2017-09-13 | トヨタ自動車株式会社 | 半導体モジュール |
JP6287407B2 (ja) * | 2014-03-19 | 2018-03-07 | サンケン電気株式会社 | 半導体装置 |
JP2015201476A (ja) * | 2014-04-04 | 2015-11-12 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
WO2015190579A1 (ja) * | 2014-06-12 | 2015-12-17 | 富士電機株式会社 | 半導体装置 |
WO2016063683A1 (ja) | 2014-10-24 | 2016-04-28 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
DE112015006059T5 (de) * | 2015-01-27 | 2017-10-12 | Mitsubishi Electric Corporation | Halbleitervorrichtung |
WO2017115434A1 (ja) * | 2015-12-28 | 2017-07-06 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法 |
US9768285B1 (en) | 2016-03-16 | 2017-09-19 | Semiconductor Components Industries, Llc | Semiconductor device and method of manufacture |
CN107218176B (zh) | 2016-03-21 | 2020-05-19 | 通用电气公司 | 风力节距调整*** |
JP2016195271A (ja) * | 2016-07-04 | 2016-11-17 | 三菱電機株式会社 | 半導体装置 |
JP6708266B2 (ja) * | 2017-01-17 | 2020-06-10 | 富士電機株式会社 | 半導体装置 |
JP6661575B2 (ja) * | 2017-06-20 | 2020-03-11 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
CN107731901B (zh) * | 2017-11-20 | 2024-02-23 | 电子科技大学 | 一种逆阻型igbt |
DE102017128243B4 (de) | 2017-11-29 | 2021-09-23 | Infineon Technologies Ag | Bipolartransistor mit isoliertem gate, aufweisend erste und zweite feldstoppzonenbereiche, und herstellungsverfahren |
CN108054201A (zh) * | 2017-12-27 | 2018-05-18 | 无锡新洁能股份有限公司 | 一种抗耐压冲击软关断的igbt器件结构及其制造方法 |
JP7010184B2 (ja) * | 2018-09-13 | 2022-01-26 | 株式会社デンソー | 半導体装置 |
CN109712885A (zh) * | 2018-12-17 | 2019-05-03 | 成都森未科技有限公司 | 一种半导体器件缓冲层制造方法 |
CN110502049B (zh) * | 2019-08-30 | 2021-05-07 | 北京北方华创微电子装备有限公司 | 卡盘温度控制方法、卡盘温度控制***及半导体设备 |
CN112582469A (zh) * | 2019-09-29 | 2021-03-30 | 比亚迪半导体股份有限公司 | 衬底、半导体器件及其制备方法 |
CN116978937A (zh) * | 2021-02-07 | 2023-10-31 | 华为技术有限公司 | 半导体器件及相关模块、电路、制备方法 |
EP4258364A1 (en) * | 2022-04-04 | 2023-10-11 | Infineon Technologies AG | Wide band gap semiconductor device and manufacturing method |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002314084A (ja) * | 2001-02-09 | 2002-10-25 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
JP2004079878A (ja) * | 2002-08-21 | 2004-03-11 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2004311481A (ja) * | 2003-04-02 | 2004-11-04 | Toshiba Corp | 半導体装置 |
JP2008211148A (ja) * | 2007-02-28 | 2008-09-11 | Fuji Electric Device Technology Co Ltd | 半導体装置およびその製造方法 |
JP2009176892A (ja) * | 2008-01-23 | 2009-08-06 | Fuji Electric Device Technology Co Ltd | 半導体装置およびその製造方法 |
WO2011052787A1 (ja) * | 2009-11-02 | 2011-05-05 | 富士電機システムズ株式会社 | 半導体装置および半導体装置の製造方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09121052A (ja) * | 1995-08-21 | 1997-05-06 | Fuji Electric Co Ltd | 半導体装置およびその製造方法 |
JP3706026B2 (ja) | 1998-07-17 | 2005-10-12 | インフィネオン テクノロジース アクチエンゲゼルシャフト | 高い逆方向電圧用のパワー半導体素子 |
DE19981344D2 (de) | 1998-07-17 | 2001-08-30 | Siemens Ag | Leistungshalbleiterelement mit einem Emitterbereich, dem eine Stoppzone vorgelagert ist |
US7084456B2 (en) * | 1999-05-25 | 2006-08-01 | Advanced Analogic Technologies, Inc. | Trench MOSFET with recessed clamping diode using graded doping |
JP4581179B2 (ja) * | 2000-04-26 | 2010-11-17 | 富士電機システムズ株式会社 | 絶縁ゲート型半導体装置 |
JP3687614B2 (ja) | 2001-02-09 | 2005-08-24 | 富士電機デバイステクノロジー株式会社 | 半導体装置 |
DE10205324B4 (de) | 2001-02-09 | 2012-04-19 | Fuji Electric Co., Ltd. | Halbleiterbauelement |
DE10205323B4 (de) | 2001-02-09 | 2011-03-24 | Fuji Electric Systems Co., Ltd. | Verfahren zur Herstellung eines Halbleiterbauelements |
JP3764343B2 (ja) * | 2001-02-28 | 2006-04-05 | 株式会社東芝 | 半導体装置の製造方法 |
JP5160001B2 (ja) | 2001-04-02 | 2013-03-13 | 富士電機株式会社 | 半導体装置の製造方法 |
JP3951868B2 (ja) * | 2002-09-12 | 2007-08-01 | 富士電機デバイステクノロジー株式会社 | 半導体装置およびその製造方法 |
DE102006046845B4 (de) * | 2006-10-02 | 2013-12-05 | Infineon Technologies Austria Ag | Halbleiterbauelement mit verbesserter Robustheit |
JP5228308B2 (ja) | 2006-10-19 | 2013-07-03 | 富士電機株式会社 | 半導体装置の製造方法 |
JP2010056134A (ja) | 2008-08-26 | 2010-03-11 | Mitsubishi Electric Corp | 半導体装置 |
US20100155831A1 (en) * | 2008-12-20 | 2010-06-24 | Power Integrations, Inc. | Deep trench insulated gate bipolar transistor |
US8101528B2 (en) * | 2009-08-07 | 2012-01-24 | Varian Semiconductor Equipment Associates, Inc. | Low temperature ion implantation |
EP2711986B1 (en) | 2011-05-18 | 2020-08-19 | Fuji Electric Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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JP2004311481A (ja) * | 2003-04-02 | 2004-11-04 | Toshiba Corp | 半導体装置 |
JP2008211148A (ja) * | 2007-02-28 | 2008-09-11 | Fuji Electric Device Technology Co Ltd | 半導体装置およびその製造方法 |
JP2009176892A (ja) * | 2008-01-23 | 2009-08-06 | Fuji Electric Device Technology Co Ltd | 半導体装置およびその製造方法 |
WO2011052787A1 (ja) * | 2009-11-02 | 2011-05-05 | 富士電機システムズ株式会社 | 半導体装置および半導体装置の製造方法 |
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CN106128946A (zh) | 2016-11-16 |
US20140070268A1 (en) | 2014-03-13 |
WO2012157772A1 (ja) | 2012-11-22 |
US20160197170A1 (en) | 2016-07-07 |
EP2711986B1 (en) | 2020-08-19 |
JPWO2012157772A1 (ja) | 2014-07-31 |
EP2711986A1 (en) | 2014-03-26 |
CN103534811A (zh) | 2014-01-22 |
US9818852B2 (en) | 2017-11-14 |
US20160211356A1 (en) | 2016-07-21 |
CN106128946B (zh) | 2019-03-08 |
US9812561B2 (en) | 2017-11-07 |
US9324847B2 (en) | 2016-04-26 |
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EP2711986A4 (en) | 2014-11-12 |
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