JP5756803B2 - 発光装置及びその製造方法 - Google Patents
発光装置及びその製造方法 Download PDFInfo
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- JP5756803B2 JP5756803B2 JP2012525350A JP2012525350A JP5756803B2 JP 5756803 B2 JP5756803 B2 JP 5756803B2 JP 2012525350 A JP2012525350 A JP 2012525350A JP 2012525350 A JP2012525350 A JP 2012525350A JP 5756803 B2 JP5756803 B2 JP 5756803B2
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- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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Description
図1に、本実施形態の発光装置1の斜視図、図2(A)及び(B)に、X方向及びY方向から見た側面図、図3(A)及び(B)に、上面側から見た平面図及び下面側から見た底面図を、夫々模式的に示す。以下、X及びY方向に直交するZ方向の正方向(矢印の方向)を上、その逆方向を下とする。
図9に、第2実施形態の発光装置13の斜視図(同図(A))、Y方向から見た側面図(同図(B))、下面側から見た底面図(同図(C))を、夫々模式的に示す。
図11に、第3実施形態の発光装置15の斜視図(同図(A))、Y方向から見た側面図(同図(B))、下面側から見た底面図(同図(C))を、夫々模式的に示す。
次に、上記各実施形態の別実施形態について説明する。
2: 絶縁性フィルム
3a,3b: ランド部
4a: 端子部(外部接続用のアノード端子)
4b: 端子部(外部接続用のカソード端子)
5,6: 接着層
7a,7b: 貫通導電体
8: 撥液層の開口部
9: 撥液層
10: 発光素子
10a: P電極
10b: N電極
11: 封止樹脂(蛍光体含有シリコン樹脂)
12: 切断領域
14: 補強材
20: 加熱ステージ
21: シート
22: シート固定ツール
23: メタルマスクの開口部
24: メタルマスク
25: スキージ
26: シリコン樹脂(成形前の蛍光体含有シリコン樹脂)
27: スプライサー
28: 撥液膜
29: ノズル
30: ボンディング用ワイヤ
31: 白色シリコン樹脂
Claims (15)
- 絶縁性フィルムと、
前記絶縁性フィルムの上面に形成された金属膜片からなる少なくとも1対のランド部と、
前記ランド部と1対1に対応して前記絶縁性フィルムを挟んで対向する前記絶縁性フィルムの下面に形成された金属膜片からなる外部接続用の端子部と、
前記絶縁性フィルムを貫通して相互に対応する前記ランド部と前記端子部間を接続する貫通導電体と、
前記1対のランド部毎に、前記1対のランド部上に形成され、前記1対のランド部間の間隙の少なくとも一部を露出する開口部を中央に有する環状層と、
前記1対のランド部と電気的に接続し、前記1対のランド部を内包する単位区画内の前記開口部の内側に設置された発光素子と、を備え、
前記開口部に前記発光素子を封止する蛍光体含有樹脂または透明樹脂がドーム状に形成され、
前記環状層が白色シリコン樹脂層または蛍光体を含有する撥液層であることを特徴とする発光装置。 - 前記環状層が前記白色シリコン樹脂層であり、前記白色シリコン樹脂層が、前記1対のランド部の外周及び間隙に形成されていることを特徴とする請求項1に記載の発光装置。
- 前記発光素子が、前記貫通導電体の直上に設置されていることを特徴とする請求項1または2に記載の発光装置。
- 前記絶縁性フィルムと前記ランド部、及び、前記絶縁性フィルムと前記端子部は、夫々接着層を介して接続していることを特徴とする請求項1〜3の何れか1項に記載の発光装置。
- 前記単位区画の周囲に設けられた前記単位区画を最小単位として個片化するための切断領域が、前記絶縁性フィルム上に格子状に設定され、
前記切断領域に囲まれた前記単位区画毎に、前記絶縁性フィルムの下面に前記端子部が1対ずつ形成され
前記切断領域の前記絶縁性フィルムの上面及び下面には、前記金属膜片が形成されていないことを特徴とする請求項1〜4の何れか1項に記載の発光装置。 - 前記切断領域に沿って前記絶縁性フィルムが切断されることで、1または複数の前記単位区画に個片化されていることを特徴とする請求項5に記載の発光装置。
- 前記単位区画毎に、前記1対のランド部に対応する1対の前記端子部間の間隙に、補強材が充填されていることを特徴とする請求項1〜6の何れか1項に記載の発光装置。
- 絶縁性フィルムの上面に、金属膜片からなる少なくとも1対のランド部を形成する工程と、
前記絶縁性フィルムの下面に、金属膜片からなる前記ランド部と1対1に対応して前記絶縁性フィルムを挟んで対向する外部接続用の端子部を形成する工程と、
前記絶縁性フィルムを貫通して相互に対応する前記ランド部と前記端子部間を接続する貫通導電体を形成する工程と、
前記1対のランド部毎に、前記1対のランド部間の間隙の少なくとも一部を露出する開口部を中央に有する環状層を、前記1対のランド部上に形成する工程と、
発光素子を、前記1対のランド部と電気的に接続し、前記1対のランド部とその間隙を含む単位区画内の前記開口部の内側に設置する工程と、
前記開口部に前記発光素子を封止する蛍光体含有樹脂または透明樹脂をドーム状に形成する工程と、を有し、
前記環状層が白色シリコン樹脂層または蛍光体を含有する撥液層であることを特徴とする発光装置の製造方法。 - 前記環状層が前記白色シリコン樹脂層であり、前記環状層を形成する工程において、前記白色シリコン樹脂層を、前記1対のランド部の外周及び間隙に形成することを特徴とする請求項8に記載の発光装置の製造方法。
- 前記発光素子を、前記貫通導電体の直上に設置することを特徴とする請求項8または9に記載の発光装置の製造方法。
- 前記蛍光体含有樹脂または透明樹脂を形成する工程において、前記環状層の開口部の少なくとも一部が露出する開口部を前記単位区画毎に有するマスク部材を用いて、前記絶縁性フィルムの上面側を覆い、前記マスク部材の開口部に、前記蛍光体含有樹脂または透明樹脂を注入することを特徴とする請求項8〜10の何れか1項に記載の発光装置の製造方法。
- 前記マスク部材の開口部が、前記環状層を覆った状態で前記環状層の上面が露出されないように形成されていることを特徴とする請求項11に記載の発光装置の製造方法。
- 前記蛍光体含有樹脂または透明樹脂の注入を、前記マスク部材、または、前記マスク部材の開口部の内壁に撥液膜を備えたマスク部材を用いて、スキージ印刷法またはポッティング法により行うことを特徴とする請求項11または12の何れか1項に記載の発光装置の製造方法。
- 前記単位区画の周囲に設けられた前記単位区画を最小単位として個片化するための切断領域に沿って前記絶縁性フィルムを切断し、1または複数の前記単位区画に個片化する工程を有することを特徴とする請求項8〜13の何れか1項に記載の発光装置の製造方法。
- 前記切断領域に沿って前記絶縁性フィルムを、市販の簡易切断具のカッターナイフ、ローラーカッター、または、ロータリーカッターを用いて切断することを特徴とする請求項14に記載の発光装置の製造方法。
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JP5609925B2 (ja) | 2012-07-09 | 2014-10-22 | 日亜化学工業株式会社 | 発光装置 |
JP6007249B2 (ja) | 2012-07-19 | 2016-10-12 | シャープ株式会社 | 列発光装置およびその製造方法 |
US8889439B2 (en) * | 2012-08-24 | 2014-11-18 | Tsmc Solid State Lighting Ltd. | Method and apparatus for packaging phosphor-coated LEDs |
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WO2014162776A1 (ja) * | 2013-04-04 | 2014-10-09 | シャープ株式会社 | 発光素子パッケージの製造方法及び発光素子パッケージ |
DE102014101557A1 (de) * | 2014-02-07 | 2015-08-13 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
DE102014101556A1 (de) | 2014-02-07 | 2015-08-13 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
US9548429B2 (en) | 2014-05-10 | 2017-01-17 | Sensor Electronic Technology, Inc. | Packaging for ultraviolet optoelectronic device |
US10147854B2 (en) | 2014-05-10 | 2018-12-04 | Sensor Electronic Technology, Inc. | Packaging for ultraviolet optoelectronic device |
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DE102016101526A1 (de) * | 2016-01-28 | 2017-08-03 | Osram Opto Semiconductors Gmbh | Herstellung eines Multichip-Bauelements |
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JP7017359B2 (ja) * | 2017-09-29 | 2022-02-08 | Hoya株式会社 | 光半導体装置 |
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