JP5702711B2 - 増加発光能力を持つiii族窒化物ledの製造方法 - Google Patents
増加発光能力を持つiii族窒化物ledの製造方法 Download PDFInfo
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Description
11 III族窒化物層
20 p電極金属被覆
22 n電極
41 伝導インタフェース
42 誘電不活性化層
Claims (17)
- 成長構造上に、p型層及びn型層を含むIII族窒化物ヘテロ構造を堆積する段階と、
前記III族窒化物ヘテロ構造の一部をエッチングにより除去して前記n型層を露出させる段階と、
各々の接触層と電気的に接続されたp及びn電極を形成する段階と、を備え、
前記p電極が、Agからなり、
前記n電極が、前記p電極の間に差し挟まれた形態の複数のフィンガを備え、
更に、前記p電極に障壁層を設ける段階と、
サブマウントを装置に取り付ける段階と、を備え、
前記サブマウントを取り付ける段階は、
前記III族窒化物ヘテロ構造とサブマウントウェーハとの間に熱経路を提供する接合部を形成する段階を含み、
前記障壁層は、前記接合部を形成する段階の間、前記p電極を保護する、
逆転発光装置を製造する方法。 - 前記サブマウントを取り付ける段階は、
サブマウントウェーハにはんだを施す段階と、
前記サブマウントウェーハをダイシングする段階と、
前記サブマウントをパッケージに取り付ける段階と、
を含むことを特徴とする請求項1に記載の方法。 - 前記サブマウントを取り付ける段階は、前記サブマウントウェーハをダイシングする段階の前に、前記III族窒化物ヘテロ構造と前記サブマウントウェーハとの間にアンダフィルを施こす段階を更に含むことを特徴とする請求項2に記載の方法。
- 前記接合部を形成する段階は、前記III族窒化物ヘテロ構造と前記サブマウントとの間に共融接合を形成する段階を含むことを特徴とする請求項2に記載の方法。
- 前記接合部を形成する段階は、前記III族窒化物ヘテロ構造と前記サブマウントとの間にはんだ接合部を形成する段階を含むことを特徴とする請求項2に記載の方法。
- 前記サブマウントを取り付ける段階は、
前記III族窒化物ヘテロ構造にはんだを施す段階と、
前記サブマウントウェーハをダイシングする段階と、
前記サブマウントをパッケージに取り付ける段階と、
を含むことを特徴とする請求項1に記載の逆転発光装置を製造する方法。 - 前記III族窒化物ヘテロ構造とサブマウントとの間にアンダフィルを施こす段階を更に含むことを特徴とする請求項6に記載の方法。
- 前記接合部を形成する段階は、前記III族窒化物ヘテロ構造と前記サブマウントとの間に共融接合を形成する段階を含むことを特徴とする請求項6に記載の方法。
- 前記接合部を形成する段階は、前記III族窒化物ヘテロ構造と前記サブマウントとの間にはんだ接合を形成する段階を含むことを特徴とする請求項6に記載の方法。
- 金属間誘電体を堆積する段階が、前記障壁層を加える段階に先行し、前記p電極は、反射性であることを特徴とする請求項1に記載の方法。
- 前記III族窒化物ヘテロ構造にはんだ可能金属を加える段階と、
前記はんだ可能金属をパターン化してはんだ可能区域を形成する段階と、
を更に含むことを特徴とする請求項1に記載の方法。 - 誘電体を加える段階と、
前記誘電体をパターン化してはんだ可能区域を形成する段階と、
を更に含むことを特徴とする請求項1に記載の方法。 - 前記III族窒化物ヘテロ構造にはんだ可能金属を加える段階と、
誘電体を加える段階と、
前記誘電体をパターン化してはんだ可能区域を形成する段階と、
を更に含むことを特徴とする請求項1に記載の方法。 - 前記逆転発光装置と近接する逆転発光装置との間にトレンチを形成するようにIII族窒化物材料をエッチングにより除去することにより、前記逆転発光装置を近接する逆転発光装置から電気的に分離する段階を更に含み、
前記サブマウントを取り付ける段階は、前記サブマウントを2つ以上の逆転発光装置に取り付ける段階を含み、
前記2つ以上の逆転発光装置は、前記サブマウント上で金属トレースにより互いに電気的に接続されることを特徴とする請求項1に記載の方法。 - 前記p電極は、10−2Ωcm2未満の固有接触抵抗を有することを特徴とする請求項1に記載の方法。
- 前記n電極の複数のフィンガは、前記n電極の複数のフィンガ間に挟まれた前記p電極よりも幅が狭いことを特徴とする請求項1に記載の方法。
- 前記サブマウントを取り付ける段階は、前記p電極と前記サブマウントとの間に配置された前記接合部を介して前記装置に取り付けることを含み、前記接合部は、前記p電極の面積の少なくとも15%の面積を有する、請求項1に記載の方法。
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-
1999
- 1999-12-22 US US09/470,450 patent/US6514782B1/en not_active Expired - Lifetime
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- 2000-12-21 WO PCT/US2000/035303 patent/WO2001047039A1/en active Application Filing
- 2000-12-21 EP EP00990353A patent/EP1161772B1/en not_active Expired - Lifetime
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- 2000-12-21 DE DE60040526T patent/DE60040526D1/de not_active Expired - Lifetime
- 2000-12-21 KR KR1020017010647A patent/KR100937879B1/ko active IP Right Grant
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DE60040526D1 (de) | 2008-11-27 |
JP2012060182A (ja) | 2012-03-22 |
KR100937879B1 (ko) | 2010-01-21 |
AU2738901A (en) | 2001-07-03 |
JP5535414B2 (ja) | 2014-07-02 |
WO2001047039A1 (en) | 2001-06-28 |
JP2001237458A (ja) | 2001-08-31 |
WO2001047039A8 (en) | 2001-10-25 |
EP1161772B1 (en) | 2008-10-15 |
KR20020002472A (ko) | 2002-01-09 |
EP1161772A1 (en) | 2001-12-12 |
US6514782B1 (en) | 2003-02-04 |
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