JP5640008B2 - 熱交換構造およびそのような構造を備える冷却デバイス - Google Patents
熱交換構造およびそのような構造を備える冷却デバイス Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
- F28D15/00—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
- F28D15/02—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
- F28D15/04—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes with tubes having a capillary structure
- F28D15/046—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes with tubes having a capillary structure characterised by the material or the construction of the capillary structure
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
- F28F13/18—Arrangements for modifying heat-transfer, e.g. increasing, decreasing by applying coatings, e.g. radiation-absorbing, radiation-reflecting; by surface treatment, e.g. polishing
- F28F13/185—Heat-exchange surfaces provided with microstructures or with porous coatings
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
- F28F13/18—Arrangements for modifying heat-transfer, e.g. increasing, decreasing by applying coatings, e.g. radiation-absorbing, radiation-reflecting; by surface treatment, e.g. polishing
- F28F13/185—Heat-exchange surfaces provided with microstructures or with porous coatings
- F28F13/187—Heat-exchange surfaces provided with microstructures or with porous coatings especially adapted for evaporator surfaces or condenser surfaces, e.g. with nucleation sites
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3732—Diamonds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/427—Cooling by change of state, e.g. use of heat pipes
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F2245/00—Coatings; Surface treatments
- F28F2245/02—Coatings; Surface treatments hydrophilic
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F2245/00—Coatings; Surface treatments
- F28F2245/04—Coatings; Surface treatments hydrophobic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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Description
a)基板上の、または基板内の非貫通孔を備えるミクロ構造を形成する段階と、
b)ミクロ構造上にナノ構造を形成する段階と、
c)孔の内面が非湿潤性であり、孔と孔との間の表面が湿潤性であるように表面の物理化学的処理をする段階とを含む。
− 犠牲層を基板上に堆積するステップと、
− ハードマスクを犠牲層上に堆積するステップであって、後者は犠牲層の材料に関して高いエッチング選択度を有する、ステップと、
− ポジティブ型樹脂層をハードマスク上に堆積するステップと、
− 孔を印刷し、露出させるステップと、
− ハードマスクを開くステップと、
− 犠牲層をエッチングするステップと、
− 樹脂の層を除去するステップと、
を含む。
c1)ナノ構造によって覆われているミクロ構造の表面全体の疎水性処理を行うステップと、
c2)孔間の領域の親水性処理を行うステップと、
を含むことができる。
ここで、式中、
− rcは核形成部位の臨界半径であり、
− λTは水に対するテイラー波長であり、
− σは液体の表面電圧であり、
− ρ1およびρvはそれぞれ液相と気相の体積質量であり、
− h1vは潜熱であり、
− TpおよびTsatは壁の温度および飽和温度である。
4 平板
6 一次面
8 孔
8.1 底部
8.2 側壁
10 「孔間領域」
12 ナノ粒子
13 凝縮器
14 蒸気泡
15 断熱領域
16 液体
17 毛細管アレイ
18 犠牲層
19 蒸気流体
20 基板
22 ハードマスク
24 感光性樹脂層
26 疎水性材料
Claims (22)
- 一次面(6)に形成された非貫通孔(8)を備える前記一次面(6)を具備する、電子コンポーネントを冷却するための熱交換構造であって、
前記面(6)はミクロ構造を形成する孔(8)を備え、前記孔(8)の内面および前記孔(8)の外側の前記一次面(6)の表面(10)はナノ構造を形成するような表面であり、前記孔(8)の内側は熱交換器において蒸発させる液体に関して非湿潤性の特性を有し、前記孔と孔との間の前記一次面(6)の前記表面(10)は前記液体に関して湿潤性の特性を有し、
前記ナノ構造は、平均直径が1nm〜150nmであるナノ粒子により形成される、電子コンポーネントを冷却するための熱交換構造。 - 前記孔(8)は、1μm〜10μmの寸法、1μm〜10μmの深さを有し、1孔/mm2〜100孔/mm2内となるように前記一次面(6)上に分散される請求項1に記載の熱交換構造。
- 疎水性表面積と全表面積との比は、15%未満である請求項1または2に記載の熱交換構造。
- 前記孔(8)の前記内面は、15°未満のヒステリシスを有する請求項1、2、または3に記載の熱交換構造。
- 前記ナノ構造は、平均直径が1nm〜100nmであるナノ粒子(12)を堆積することによって得られる請求項1〜4のいずれか一項に記載の熱交換構造。
- 蒸発器、凝縮器、および前記蒸発器において液相から気相へ、前記凝縮器(13)において気相から液相へ遷移することができる流体を備える冷却システムであって、
前記蒸発器は、請求項1〜5のいずれか一項に記載の熱交換構造(2)である冷却システム。 - 液相の前記流体を前記凝縮器(13)から前記蒸発器(4)へ移動する毛細管のアレイ(17)である、ヒートパイプを形成する請求項6に記載の冷却システム。
- 請求項6または7に記載の冷却システムを備え、前記冷却システムはデバイスの基板上に取り付けられるか、または前記デバイスと一体化される電子デバイスもしくはマイクロエレクトロニクスデバイス。
- 請求項6または7に記載の冷却システムを備えるオンボードデバイスまたは携帯型デバイス。
- a)基板上に、または基板内に非貫通孔(8)を備えるミクロ構造を形成する段階と、
b)前記ミクロ構造上にナノ構造を形成する段階と、
c)前記孔(8)の前記内面が非湿潤性であり、前記孔(8)と孔(8)との間の前記表面(10)が湿潤性であるように、前記表面の物理化学的処理をする段階と
を含み、
段階b)は、ナノ粒子を備えるナノ構造の形成を含む、
請求項1〜5のいずれか一項に記載の熱交換構造(2)を形成するための方法。 - 前記段階a)は、
− 犠牲層(18)を基板(20)上に堆積する段階と、
− ハードマスク(22)を前記犠牲層(18)上に堆積するステップであって、前記ハードマスク(22)は前記犠牲層(18)の材料に対して高いエッチング選択度を有する、堆積するステップと、
− ポジティブ型感光性樹脂層(24)を前記ハードマスク(22)上に堆積するステップと、
− 孔(8)を印刷し、露出させるステップと、
− 前記ハードマスク(22)を開口するステップと、
− 前記犠牲層(18)をエッチングするステップと、
− 前記樹脂層(24)を除去するステップと、
を含む請求項10に記載の熱交換構造を形成するための方法。 - 前記犠牲層(18)は、DLC(「ダイヤモンド状炭素」)層である請求項11に記載の熱交換構造を形成するための方法。
- 前記ハードマスク(22)は、SiO2またはSiCから作られる請求項11または12に記載の熱交換構造を形成するための方法。
- 前記マスク(22)は、フッ素化プラズマによって開口され、前記犠牲層(18)の前記エッチングは、酸化プラズマを使用して行われる請求項11〜13のいずれか一項に記載の熱交換構造を形成するための方法。
- 前記段階b)は、前記孔(8)の前記内面および孔間領域(10)から形成される前記ミクロ構造全体にわたってナノ粒子(12)を堆積させ、ナノ粒子(12)の堆積によってナノ構造表面を形成するステップを含む請求項10〜14のいずれか一項に記載の熱交換構造を形成するための方法。
- 前記段階c)は、
c1)前記ナノ構造によって覆われている前記ミクロ構造の前記表面全体の疎水性処理を行うステップと、
c2)前記孔間領域(10)の親水性処理を行うステップと、
を含む請求項10〜15のいずれか一項に記載の熱交換構造を形成するための方法。 - 前記ステップc1)は、疎水性材料の薄膜(26)を堆積することによって行われる請求項16に記載の熱交換構造を形成するための方法。
- 前記ステップc1)は、SiOCの薄膜(26)を堆積することによって行われる請求項16に記載の熱交換構造を形成するための方法。
- 前記膜(26)の厚さは、非構造化表面の平均的な粗さより小さい請求項17又は請求項18に記載の熱交換構造を形成するための方法。
- 前記ステップc2)は、前記疎水性材料を空気に曝し、前記孔(8)の前記内面を除いて前記ナノ構造表面に光線を当ててスキャンすることによって実行することができる請求項16〜19のいずれか一項に記載の熱交換構造を形成するための方法。
- 前記ステップc2)は、前記疎水性材料を空気に曝し、前記ナノ構造表面にレーキング紫外線ビームを当ててスキャンすることによって実行され、前記ビームは前記孔(8)の前記内面をスキャンしないように前記表面に対して傾斜している請求項20に記載の熱交換構造を形成するための方法。
- 請求項1〜5のいずれか一つに記載の熱交換構造を使用して、電子コンポーネントを備える装置を冷却するための方法であって、前記熱交換構造は冷却される電子コンポーネントに対向して配置され、前記液体は熱交換構造の孔及び孔の外側表面を覆う方法。
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Application Number | Priority Date | Filing Date | Title |
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FR0855336A FR2934709B1 (fr) | 2008-08-01 | 2008-08-01 | Structure d'echange thermique et dispositif de refroidissement comportant une telle structure. |
FR0855336 | 2008-08-01 | ||
PCT/EP2009/059848 WO2010012798A1 (fr) | 2008-08-01 | 2009-07-30 | Structure d'echange thermique et dispositif de refroidissement comportant une telle structure |
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JP2011530195A JP2011530195A (ja) | 2011-12-15 |
JP5640008B2 true JP5640008B2 (ja) | 2014-12-10 |
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US (1) | US9362201B2 (ja) |
EP (1) | EP2311086B1 (ja) |
JP (1) | JP5640008B2 (ja) |
FR (1) | FR2934709B1 (ja) |
WO (1) | WO2010012798A1 (ja) |
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EP2311086A1 (fr) | 2011-04-20 |
US9362201B2 (en) | 2016-06-07 |
EP2311086B1 (fr) | 2016-11-09 |
JP2011530195A (ja) | 2011-12-15 |
FR2934709B1 (fr) | 2010-09-10 |
US20110198059A1 (en) | 2011-08-18 |
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