JP5179455B2 - プラズマエッチング方法 - Google Patents
プラズマエッチング方法 Download PDFInfo
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- JP5179455B2 JP5179455B2 JP2009246096A JP2009246096A JP5179455B2 JP 5179455 B2 JP5179455 B2 JP 5179455B2 JP 2009246096 A JP2009246096 A JP 2009246096A JP 2009246096 A JP2009246096 A JP 2009246096A JP 5179455 B2 JP5179455 B2 JP 5179455B2
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- etching
- silicon carbide
- carbide substrate
- temperature
- plasma
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- 238000001020 plasma etching Methods 0.000 title claims description 27
- 238000000034 method Methods 0.000 title claims description 26
- 239000000758 substrate Substances 0.000 claims description 156
- 238000005530 etching Methods 0.000 claims description 116
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 101
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 99
- 239000007789 gas Substances 0.000 claims description 60
- 238000012545 processing Methods 0.000 claims description 42
- 238000010438 heat treatment Methods 0.000 claims description 35
- 239000011261 inert gas Substances 0.000 claims description 26
- 150000002500 ions Chemical class 0.000 claims description 16
- 238000005513 bias potential Methods 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 description 46
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 22
- 235000012239 silicon dioxide Nutrition 0.000 description 11
- 239000000377 silicon dioxide Substances 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- FFBGYFUYJVKRNV-UHFFFAOYSA-N boranylidynephosphane Chemical compound P#B FFBGYFUYJVKRNV-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0475—Changing the shape of the semiconductor body, e.g. forming recesses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Ceramic Engineering (AREA)
- Drying Of Semiconductors (AREA)
Description
閉塞空間を有する処理チャンバと、炭化珪素基板が載置される基台と、前記処理チャンバ内を減圧する排気装置と、前記処理チャンバ内にガスを供給するガス供給装置と、環状のコイルとを有し、このコイルに高周波電力を供給して、前記処理チャンバ内に供給されたガスをプラズマ化するプラズマ生成装置と、前記基台に高周波電力を供給する高周波電源とを備えたエッチング装置を用いて、前記基台上の炭化珪素基板をプラズマエッチングする方法であって、
前記基台上に前記炭化珪素基板を載置した後、
前記排気装置によって減圧された前記処理チャンバ内に、前記ガス供給装置によってエッチングガスを供給し、供給したエッチングガスを前記プラズマ生成装置によってプラズマ化し、且つ、前記高周波電源によって前記基台にバイアス電位を与えて前記炭化珪素基板をエッチングするとともに、
前記炭化珪素基板の冷却を組み合わせて、前記ガス供給装置により不活性ガスを前記処理チャンバ内に供給し、供給した不活性ガスを前記プラズマ生成装置によってプラズマ化し、且つ、前記高周波電源によって前記基台にバイアス電位を与え、前記不活性ガスのプラズマ化により生成されたイオンを前記炭化珪素基板に入射させることにより前記炭化珪素基板を300℃〜400℃の温度に予め加熱した後、この温度を維持しながら前記炭化珪素基板をエッチングするようにしたことを特徴とするプラズマエッチング方法に係る。
11 処理チャンバ
15 基台
20 排気装置
25 ガス供給装置
26 エッチングガス供給部
27 不活性ガス供給部
30 プラズマ生成装置
31 コイル
32 高周波電源
35 高周波電源
K 炭化珪素基板
Claims (1)
- 閉塞空間を有する処理チャンバと、炭化珪素基板が載置される基台と、前記処理チャンバ内を減圧する排気装置と、前記処理チャンバ内にガスを供給するガス供給装置と、環状のコイルとを有し、このコイルに高周波電力を供給して、前記処理チャンバ内に供給されたガスをプラズマ化するプラズマ生成装置と、前記基台に高周波電力を供給する高周波電源とを備えたエッチング装置を用いて、前記基台上の炭化珪素基板をプラズマエッチングする方法であって、
前記基台上に前記炭化珪素基板を載置した後、
前記排気装置によって減圧された前記処理チャンバ内に、前記ガス供給装置によってエッチングガスを供給し、供給したエッチングガスを前記プラズマ生成装置によってプラズマ化し、且つ、前記高周波電源によって前記基台にバイアス電位を与えて前記炭化珪素基板をエッチングするとともに、
前記炭化珪素基板の冷却を組み合わせて、前記ガス供給装置により不活性ガスを前記処理チャンバ内に供給し、供給した不活性ガスを前記プラズマ生成装置によってプラズマ化し、且つ、前記高周波電源によって前記基台にバイアス電位を与え、前記不活性ガスのプラズマ化により生成されたイオンを前記炭化珪素基板に入射させることにより前記炭化珪素基板を300℃〜400℃の温度に予め加熱した後、この温度を維持しながら前記炭化珪素基板をエッチングするようにしたことを特徴とするプラズマエッチング方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009246096A JP5179455B2 (ja) | 2009-10-27 | 2009-10-27 | プラズマエッチング方法 |
CN2010800266927A CN102473630A (zh) | 2009-10-27 | 2010-09-06 | 等离子蚀刻法 |
PCT/JP2010/065203 WO2011052296A1 (ja) | 2009-10-27 | 2010-09-06 | プラズマエッチング方法 |
KR1020117023438A KR101861709B1 (ko) | 2009-10-27 | 2010-09-06 | 플라즈마 식각 방법 |
US13/318,279 US8673781B2 (en) | 2009-10-27 | 2010-09-06 | Plasma etching method |
EP10826431.8A EP2495757B1 (en) | 2009-10-27 | 2010-09-06 | Plasma etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009246096A JP5179455B2 (ja) | 2009-10-27 | 2009-10-27 | プラズマエッチング方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011273076A Division JP2012054616A (ja) | 2011-12-14 | 2011-12-14 | プラズマエッチング方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2011096700A JP2011096700A (ja) | 2011-05-12 |
JP2011096700A5 JP2011096700A5 (ja) | 2011-11-04 |
JP5179455B2 true JP5179455B2 (ja) | 2013-04-10 |
Family
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Family Applications (1)
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JP2009246096A Active JP5179455B2 (ja) | 2009-10-27 | 2009-10-27 | プラズマエッチング方法 |
Country Status (6)
Country | Link |
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US (1) | US8673781B2 (ja) |
EP (1) | EP2495757B1 (ja) |
JP (1) | JP5179455B2 (ja) |
KR (1) | KR101861709B1 (ja) |
CN (1) | CN102473630A (ja) |
WO (1) | WO2011052296A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2934709B1 (fr) * | 2008-08-01 | 2010-09-10 | Commissariat Energie Atomique | Structure d'echange thermique et dispositif de refroidissement comportant une telle structure. |
WO2012008179A1 (ja) * | 2010-07-12 | 2012-01-19 | 住友精密工業株式会社 | エッチング方法 |
JP5658110B2 (ja) * | 2011-08-29 | 2015-01-21 | パナソニックIpマネジメント株式会社 | ドライエッチング方法 |
US9123542B2 (en) | 2011-09-05 | 2015-09-01 | Spp Technologies Co., Ltd. | Plasma etching method |
JP5877982B2 (ja) * | 2011-09-22 | 2016-03-08 | Sppテクノロジーズ株式会社 | プラズマエッチング方法 |
JP5888027B2 (ja) * | 2012-03-14 | 2016-03-16 | 富士通株式会社 | 半導体装置の製造方法 |
US20140342569A1 (en) * | 2013-05-16 | 2014-11-20 | Applied Materials, Inc. | Near surface etch selectivity enhancement |
JP5874687B2 (ja) * | 2013-05-31 | 2016-03-02 | 豊田合成株式会社 | 半導体素装置の製造方法 |
JP2017005177A (ja) * | 2015-06-12 | 2017-01-05 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07105441B2 (ja) * | 1992-11-30 | 1995-11-13 | 日本電気株式会社 | 半導体装置の製造方法 |
JPH088232A (ja) * | 1994-06-22 | 1996-01-12 | Sony Corp | プラズマ処理方法 |
US5571374A (en) * | 1995-10-02 | 1996-11-05 | Motorola | Method of etching silicon carbide |
JPH10303185A (ja) | 1997-04-26 | 1998-11-13 | Anelva Corp | エッチング装置及びエッチング方法 |
JPH11162958A (ja) * | 1997-09-16 | 1999-06-18 | Tokyo Electron Ltd | プラズマ処理装置及びその方法 |
JP2001144075A (ja) | 1999-11-15 | 2001-05-25 | Matsushita Electric Ind Co Ltd | プラズマ処理装置 |
US6475889B1 (en) * | 2000-04-11 | 2002-11-05 | Cree, Inc. | Method of forming vias in silicon carbide and resulting devices and circuits |
US6670278B2 (en) * | 2001-03-30 | 2003-12-30 | Lam Research Corporation | Method of plasma etching of silicon carbide |
JP2003069154A (ja) * | 2001-06-11 | 2003-03-07 | Sharp Corp | 半導体レーザ素子およびその製造方法 |
JP2003273084A (ja) * | 2002-03-15 | 2003-09-26 | Seiko Epson Corp | 大気圧プラズマ装置、大気圧プラズマ処理方法及びデバイス並びにデバイス製造方法 |
JP4030982B2 (ja) | 2004-05-10 | 2008-01-09 | ユーディナデバイス株式会社 | 半導体装置および半導体装置の製造方法 |
US7465670B2 (en) * | 2005-03-28 | 2008-12-16 | Tokyo Electron Limited | Plasma etching method, plasma etching apparatus, control program and computer storage medium with enhanced selectivity |
JP4859474B2 (ja) * | 2006-02-15 | 2012-01-25 | 三菱重工業株式会社 | プラズマ処理方法、及び、プラズマ処理装置 |
JP4516538B2 (ja) | 2006-03-01 | 2010-08-04 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
JP5135885B2 (ja) | 2007-05-24 | 2013-02-06 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法 |
JP5072082B2 (ja) * | 2007-09-07 | 2012-11-14 | 株式会社アルバック | ドライエッチング方法 |
JP5309587B2 (ja) | 2008-02-07 | 2013-10-09 | 富士電機株式会社 | 炭化珪素半導体基板のトレンチエッチング方法 |
JP2009194194A (ja) * | 2008-02-15 | 2009-08-27 | Sumitomo Precision Prod Co Ltd | プラズマ処理方法 |
-
2009
- 2009-10-27 JP JP2009246096A patent/JP5179455B2/ja active Active
-
2010
- 2010-09-06 EP EP10826431.8A patent/EP2495757B1/en active Active
- 2010-09-06 KR KR1020117023438A patent/KR101861709B1/ko active IP Right Grant
- 2010-09-06 US US13/318,279 patent/US8673781B2/en active Active
- 2010-09-06 WO PCT/JP2010/065203 patent/WO2011052296A1/ja active Application Filing
- 2010-09-06 CN CN2010800266927A patent/CN102473630A/zh active Pending
Also Published As
Publication number | Publication date |
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KR20120073160A (ko) | 2012-07-04 |
US20120052688A1 (en) | 2012-03-01 |
EP2495757A4 (en) | 2013-02-20 |
EP2495757B1 (en) | 2020-04-22 |
CN102473630A (zh) | 2012-05-23 |
EP2495757A1 (en) | 2012-09-05 |
US8673781B2 (en) | 2014-03-18 |
KR101861709B1 (ko) | 2018-05-28 |
WO2011052296A1 (ja) | 2011-05-05 |
JP2011096700A (ja) | 2011-05-12 |
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