JP5613792B2 - ウェーハの加工方法 - Google Patents
ウェーハの加工方法 Download PDFInfo
- Publication number
- JP5613792B2 JP5613792B2 JP2013087331A JP2013087331A JP5613792B2 JP 5613792 B2 JP5613792 B2 JP 5613792B2 JP 2013087331 A JP2013087331 A JP 2013087331A JP 2013087331 A JP2013087331 A JP 2013087331A JP 5613792 B2 JP5613792 B2 JP 5613792B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- ring
- shaped reinforcing
- back surface
- grinding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000003672 processing method Methods 0.000 title claims description 11
- 230000003014 reinforcing effect Effects 0.000 claims description 38
- 230000002093 peripheral effect Effects 0.000 claims description 22
- 238000000034 method Methods 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 238000004544 sputter deposition Methods 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 4
- 230000002787 reinforcement Effects 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000006837 decompression Effects 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- -1 argon ions Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/08—Preparation of the foundation plate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/32—Holders for supporting the complete device in operation, i.e. detachable fixtures
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Dicing (AREA)
Description
垂直方向の軸心を有する回転軸22と、回転軸22の下端に装着されたホイール23と、ホイール23の下面に固着された砥石部24とから構成される。砥石部24は、その回転軌道の最外周の直径がデバイス領域W1の半径より大きくデバイス領域W1の直径より小さくなるように、かつ、回転軌道の最内周の直径がデバイス領域W1の半径より小さくなるように形成されている。
Wa:表面
S:ストリート D:デバイス W1:デバイス領域 W2:外周余剰領域
Wb:裏面
W3:凹部
W4:リング状補強部
T、T1:ダイシングテープ F:フレーム
1:保護部材
2:研削装置
20:チャックテーブル 21:研削部 22:回転軸 23:ホイール
24:砥石部
3:減圧成膜装置
31:チャンバー 32:保持部 33:励磁部材 34:スパッタ源
35:高周波電源 36:導入口 37:減圧口
4:切削装置
40:チャックテーブル
400:駆動源 401:移動基台
41:切削手段
410:ハウジング 411:スピンドル 412:切削ブレード
413:支持部
42:切削送り手段
420:ボールネジ 421:パルスモータ 422:ガイドレール
43:アライメント手段
430:赤外線カメラ
44:切り込み送り手段
440:壁部 441:ボールネジ 442:パルスモータ
443:ガイドレール
45:割り出し送り手段
450:ボールネジ 451:移動基台 452:パルスモータ
453:ガイドレール
50:保持テーブル 51:プローブ
6:金属膜
7:凸部
Claims (4)
- 複数のデバイスが形成されたデバイス領域と該デバイス領域を囲繞する外周余剰領域とを表面に備えたウェーハを加工するウェーハの加工方法であって、
該ウェーハの表面側を研削装置のチャックテーブルに保持し、該ウェーハの裏面のうち該デバイス領域に相当する領域を研削して凹部を形成する裏面研削工程によって、該凹部の外周側に該外周余剰領域を含むリング状補強部が形成され、
該研削装置は、回転軸と該回転軸に装着され砥石部が固着されたホイールとを備えた研削部を含み、該砥石部の回転軌道の最外周の直径は該デバイス領域の半径より大きく該デバイス領域の直径より小さく、該砥石部の回転軌道の最内周の直径は該デバイス領域の半径より小さく、該裏面研削工程では、該チャックテーブルを回転させながら、該砥石部を該ウェーハの裏面の回転中心に常時接触させると共に該外周余剰領域の裏面に接触させずに該裏面を研削するウェーハの加工方法。 - 前記リング状補強部を除去するリング状補強部分離工程を遂行した後に、ウェーハを分割する分割工程を遂行する請求項1に記載のウェーハの加工方法。
- 前記リング状補強部分離工程においては、前記リング状補強部の内周に沿ってその内側を切断する請求項2に記載のウェーハの加工方法。
- 前記リング状補強部の幅は、2〜3mmである請求項2または3に記載のウェーハの加工方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013087331A JP5613792B2 (ja) | 2005-04-27 | 2013-04-18 | ウェーハの加工方法 |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005129741 | 2005-04-27 | ||
JP2005129741 | 2005-04-27 | ||
JP2005165395 | 2005-06-06 | ||
JP2005165395 | 2005-06-06 | ||
JP2013087331A JP5613792B2 (ja) | 2005-04-27 | 2013-04-18 | ウェーハの加工方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006069118A Division JP5390740B2 (ja) | 2005-04-27 | 2006-03-14 | ウェーハの加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013141032A JP2013141032A (ja) | 2013-07-18 |
JP5613792B2 true JP5613792B2 (ja) | 2014-10-29 |
Family
ID=37233648
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013087331A Active JP5613792B2 (ja) | 2005-04-27 | 2013-04-18 | ウェーハの加工方法 |
JP2013087332A Active JP5613793B2 (ja) | 2005-04-27 | 2013-04-18 | ウェーハの加工方法 |
JP2013087333A Active JP5613794B2 (ja) | 2005-04-27 | 2013-04-18 | ウェーハの加工方法 |
JP2013087334A Active JP5526255B2 (ja) | 2005-04-27 | 2013-04-18 | ウェーハの加工方法 |
Family Applications After (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013087332A Active JP5613793B2 (ja) | 2005-04-27 | 2013-04-18 | ウェーハの加工方法 |
JP2013087333A Active JP5613794B2 (ja) | 2005-04-27 | 2013-04-18 | ウェーハの加工方法 |
JP2013087334A Active JP5526255B2 (ja) | 2005-04-27 | 2013-04-18 | ウェーハの加工方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7705430B2 (ja) |
JP (4) | JP5613792B2 (ja) |
KR (1) | KR101152873B1 (ja) |
DE (1) | DE102006018644B4 (ja) |
SG (1) | SG126885A1 (ja) |
TW (1) | TWI416653B (ja) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007019379A (ja) * | 2005-07-11 | 2007-01-25 | Disco Abrasive Syst Ltd | ウェーハの加工方法 |
JP4791774B2 (ja) * | 2005-07-25 | 2011-10-12 | 株式会社ディスコ | ウェーハの加工方法及び研削装置 |
JP2007243112A (ja) * | 2006-03-13 | 2007-09-20 | Disco Abrasive Syst Ltd | ウェーハの凹状加工方法及び凹凸吸収パッド |
JP4806282B2 (ja) * | 2006-03-29 | 2011-11-02 | 株式会社ディスコ | ウエーハの処理装置 |
JP5073962B2 (ja) * | 2006-05-12 | 2012-11-14 | 株式会社ディスコ | ウエーハの加工方法 |
JP2008073740A (ja) * | 2006-09-22 | 2008-04-03 | Disco Abrasive Syst Ltd | ビアホールの加工方法 |
US8012857B2 (en) * | 2007-08-07 | 2011-09-06 | Semiconductor Components Industries, Llc | Semiconductor die singulation method |
US8859396B2 (en) | 2007-08-07 | 2014-10-14 | Semiconductor Components Industries, Llc | Semiconductor die singulation method |
US7989319B2 (en) * | 2007-08-07 | 2011-08-02 | Semiconductor Components Industries, Llc | Semiconductor die singulation method |
JP2009064801A (ja) * | 2007-09-04 | 2009-03-26 | Disco Abrasive Syst Ltd | ウエーハ |
US9299664B2 (en) * | 2010-01-18 | 2016-03-29 | Semiconductor Components Industries, Llc | Method of forming an EM protected semiconductor die |
US9165833B2 (en) * | 2010-01-18 | 2015-10-20 | Semiconductor Components Industries, Llc | Method of forming a semiconductor die |
US8384231B2 (en) * | 2010-01-18 | 2013-02-26 | Semiconductor Components Industries, Llc | Method of forming a semiconductor die |
JP5664470B2 (ja) * | 2010-06-28 | 2015-02-04 | 信越化学工業株式会社 | ナノインプリント用合成石英ガラス基板の製造方法 |
JP2013012690A (ja) | 2011-06-30 | 2013-01-17 | Toshiba Corp | 半導体ウエハの加工方法及び加工装置、並びに、半導体ウエハ |
FR2982415B1 (fr) | 2011-11-09 | 2014-06-13 | Commissariat Energie Atomique | Procede d'obtention d'un substrat pour la fabrication de semi-conducteur et substrat correspondant |
USD760180S1 (en) * | 2014-02-21 | 2016-06-28 | Hzo, Inc. | Hexcell channel arrangement for use in a boat for a deposition apparatus |
JP6061590B2 (ja) * | 2012-09-27 | 2017-01-18 | 株式会社ディスコ | 表面保護部材および加工方法 |
US9484260B2 (en) | 2012-11-07 | 2016-11-01 | Semiconductor Components Industries, Llc | Heated carrier substrate semiconductor die singulation method |
US9136173B2 (en) | 2012-11-07 | 2015-09-15 | Semiconductor Components Industries, Llc | Singulation method for semiconductor die having a layer of material along one major surface |
JP6156509B2 (ja) | 2013-10-15 | 2017-07-05 | 三菱電機株式会社 | 半導体素子の製造方法 |
US9418894B2 (en) | 2014-03-21 | 2016-08-16 | Semiconductor Components Industries, Llc | Electronic die singulation method |
JP6366351B2 (ja) * | 2014-05-13 | 2018-08-01 | 株式会社ディスコ | ウェーハの加工方法 |
US9385041B2 (en) | 2014-08-26 | 2016-07-05 | Semiconductor Components Industries, Llc | Method for insulating singulated electronic die |
JP2016047561A (ja) * | 2014-08-27 | 2016-04-07 | 株式会社ディスコ | 研削装置 |
JP6534861B2 (ja) * | 2015-06-01 | 2019-06-26 | 株式会社ディスコ | 研削装置 |
JP6510393B2 (ja) * | 2015-12-15 | 2019-05-08 | 三菱電機株式会社 | 半導体装置の製造方法 |
JP1563718S (ja) * | 2015-12-28 | 2016-11-21 | ||
JP1563719S (ja) * | 2015-12-28 | 2016-11-21 | ||
US10366923B2 (en) | 2016-06-02 | 2019-07-30 | Semiconductor Components Industries, Llc | Method of separating electronic devices having a back layer and apparatus |
JP6692578B2 (ja) * | 2016-06-30 | 2020-05-13 | 株式会社ディスコ | ウェーハの加工方法 |
JP6723892B2 (ja) * | 2016-10-03 | 2020-07-15 | 株式会社ディスコ | ウエーハの加工方法 |
US10373869B2 (en) | 2017-05-24 | 2019-08-06 | Semiconductor Components Industries, Llc | Method of separating a back layer on a substrate using exposure to reduced temperature and related apparatus |
JP7067878B2 (ja) | 2017-07-04 | 2022-05-16 | 株式会社ディスコ | 研削装置 |
KR102525490B1 (ko) | 2017-10-24 | 2023-04-24 | 삼성전자주식회사 | 인쇄 회로 기판, 반도체 패키지 및 반도체 패키지의 제조 방법 |
US10818551B2 (en) | 2019-01-09 | 2020-10-27 | Semiconductor Components Industries, Llc | Plasma die singulation systems and related methods |
JP7332398B2 (ja) | 2019-09-04 | 2023-08-23 | キオクシア株式会社 | 半導体ウェハ |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5364566U (ja) * | 1976-11-02 | 1978-05-31 | ||
JPS5538024A (en) * | 1978-09-11 | 1980-03-17 | Toshiba Corp | Manufacturing of semiconductor device |
JPH03184756A (ja) * | 1989-12-12 | 1991-08-12 | Fuji Electric Co Ltd | ウエーハの研削加工方法 |
JPH0732252A (ja) * | 1993-07-22 | 1995-02-03 | Hitachi Ltd | ワーク自転型研削加工方法、ワーク自転型研削盤及びシリコンウェハ並びにセラミック基板 |
JPH11121414A (ja) * | 1997-10-15 | 1999-04-30 | Toyota Motor Corp | 半導体装置の製造方法 |
JP3292835B2 (ja) * | 1998-05-06 | 2002-06-17 | 信越半導体株式会社 | 薄板ワークの平面研削方法およびその研削装置 |
JP2001257185A (ja) * | 2000-03-13 | 2001-09-21 | Toshiba Corp | 半導体装置の加工方法および半導体基板 |
JP2002111049A (ja) * | 2000-09-26 | 2002-04-12 | Stanley Electric Co Ltd | 半導体発光素子の製造方法 |
JP2002141253A (ja) * | 2000-10-31 | 2002-05-17 | Disco Abrasive Syst Ltd | 半導体装置 |
JP2003007743A (ja) * | 2001-06-22 | 2003-01-10 | Mitsumi Electric Co Ltd | Uvテープ及び半導体集積回路パッケージの製造方法 |
JP3580293B2 (ja) * | 2002-03-26 | 2004-10-20 | 株式会社デンソー | 半導体装置の製造方法 |
TWI241674B (en) * | 2001-11-30 | 2005-10-11 | Disco Corp | Manufacturing method of semiconductor chip |
DE10256985B4 (de) * | 2001-12-12 | 2013-01-10 | Denso Corporation | Verfahren zur Herstellung eines Leistungshalbleiterbauelements |
JP3620528B2 (ja) * | 2001-12-12 | 2005-02-16 | 株式会社デンソー | 半導体装置の製造方法 |
JP4485737B2 (ja) * | 2002-04-16 | 2010-06-23 | 日本エー・エス・エム株式会社 | プラズマcvd装置 |
US6936546B2 (en) * | 2002-04-26 | 2005-08-30 | Accretech Usa, Inc. | Apparatus for shaping thin films in the near-edge regions of in-process semiconductor substrates |
JP4185704B2 (ja) * | 2002-05-15 | 2008-11-26 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
US7048608B2 (en) * | 2004-09-22 | 2006-05-23 | Lam Research Corporation | Semiconductor wafer material removal apparatus and method for operating the same |
-
2006
- 2006-04-18 SG SG200602544A patent/SG126885A1/en unknown
- 2006-04-19 TW TW095113984A patent/TWI416653B/zh active
- 2006-04-21 DE DE102006018644A patent/DE102006018644B4/de active Active
- 2006-04-24 US US11/408,971 patent/US7705430B2/en active Active
- 2006-04-25 KR KR1020060037197A patent/KR101152873B1/ko active IP Right Grant
-
2008
- 2008-09-29 US US12/285,091 patent/US20090036034A1/en not_active Abandoned
-
2013
- 2013-04-18 JP JP2013087331A patent/JP5613792B2/ja active Active
- 2013-04-18 JP JP2013087332A patent/JP5613793B2/ja active Active
- 2013-04-18 JP JP2013087333A patent/JP5613794B2/ja active Active
- 2013-04-18 JP JP2013087334A patent/JP5526255B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
TWI416653B (zh) | 2013-11-21 |
US20060244096A1 (en) | 2006-11-02 |
JP5613793B2 (ja) | 2014-10-29 |
JP2013141032A (ja) | 2013-07-18 |
US20090036034A1 (en) | 2009-02-05 |
TW200707625A (en) | 2007-02-16 |
JP2013141033A (ja) | 2013-07-18 |
JP2013165287A (ja) | 2013-08-22 |
JP5613794B2 (ja) | 2014-10-29 |
SG126885A1 (en) | 2006-11-29 |
JP2013165286A (ja) | 2013-08-22 |
DE102006018644B4 (de) | 2013-02-14 |
KR101152873B1 (ko) | 2012-06-12 |
KR20060113438A (ko) | 2006-11-02 |
DE102006018644A1 (de) | 2007-01-04 |
JP5526255B2 (ja) | 2014-06-18 |
US7705430B2 (en) | 2010-04-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5613792B2 (ja) | ウェーハの加工方法 | |
JP5390740B2 (ja) | ウェーハの加工方法 | |
JP4749851B2 (ja) | ウェーハの分割方法 | |
JP4462997B2 (ja) | ウェーハの加工方法 | |
JP5048379B2 (ja) | ウェーハの加工方法 | |
JP4791774B2 (ja) | ウェーハの加工方法及び研削装置 | |
JP4791772B2 (ja) | ウェーハの加工方法 | |
US7498239B2 (en) | Wafer processing method | |
JP4806282B2 (ja) | ウエーハの処理装置 | |
JP2007019379A (ja) | ウェーハの加工方法 | |
JP4749849B2 (ja) | ウェーハの分割方法 | |
JP2008042081A (ja) | ウエーハ研削装置 | |
JP2008084976A (ja) | ウエーハの研削加工方法 | |
JP2007266352A (ja) | ウエーハの加工方法 | |
TW201041026A (en) | Wafer processing method | |
JP2008290201A (ja) | ウェーハの研削加工方法 | |
JP5886538B2 (ja) | ウェーハの加工方法 | |
JP2005150434A (ja) | 半導体ウェーハの製造方法 | |
JP4637692B2 (ja) | 粘着フィルム貼着装置 | |
JP6692578B2 (ja) | ウェーハの加工方法 | |
JP5619382B2 (ja) | ウエーハの加工方法 | |
JP2018207010A (ja) | デバイスチップの製造方法 | |
JP2009010179A (ja) | ウェーハの加工方法 | |
JP5264525B2 (ja) | 研削装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130419 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140313 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140509 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140812 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140908 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5613792 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160217 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |