JP6510393B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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Description
(装置構成)
図1を参照して、本実施の形態の半導体装置50は、縦型電力用半導体装置であり、具体的にはトレンチゲート型のIGBTである。半導体装置50は、半導体ウエハ10と、ゲート絶縁膜21と、ゲート電極22と、層間絶縁膜23と、エミッタ電極31(第1の電極層)と、コレクタ電極32(第2の電極層)とを有している。半導体ウエハ10は、ウエハ上面S1(第1のウエハ面)と、ウエハ裏面S2(第1のウエハ面と反対の第2のウエハ面)とを有している。ウエハ上面S1上には、トレンチTR、層間絶縁膜23、エミッタ電極31、電極パッド(図示せず)などの存在に起因して、凹凸形状が形成されている。
図2は、本実施の形態における半導体装置の製造方法の構成を概略的に示すフロー図である。図3(a)〜(d)は、この製造方法を、半導体ウエハ10全体を含む概略的な形状に着目して工程順に説明する図である。図4(a)〜(c)は、この製造方法を、ウエハ上面S1上の凹凸形状を模式的に示しつつ、工程順に説明する図である。以下、これらの図を参照しつつ、本実施の形態における半導体装置の製造方法について説明する。
図7(a)は、ステップS60(図2)後の半導体ウエハ10の半導体領域の厚みTH(図6)の分布の例を示している。グラフ図中、「ウエハ位置」は、直径方向における半導体ウエハ10の中心位置からの距離を表している。また厚みTHは、図6に示すように、トレンチTRの存在を無視した半導体領域の寸法である。厚み測定は、半導体ウエハ10のうち薄化加工が行われた部分、すなわち凹部形状SC、において行われた。また測定には、赤外光を用いた非接触方式の測定装置(浜松ホトニクス製「Optical MicroGauge」)が用いられた。
本実施の形態によれば、半導体ウエハ10を部分的に除去することによって、ウエハ裏面S2に凹部形状SC(図8(a))が形成される。半導体ウエハ10のうち、凹部形状SCよりも外側の部分が、環状補強部10Rを構成する。環状補強部10Rは半導体ウエハ10の補強部としての機能を有する。これにより半導体ウエハ10の剛性が確保されることで、ウエハの反りが抑制される。よって、薄化加工後の半導体ウエハ10の取り扱いを容易とすることができる。ここで凹部形状SCは、平面視において樹脂外周端60Eから0.5mm以上内側に位置する凹部外周端ECを有するように形成される。これにより、薄化加工時における半導体ウエハ10の割れを防止することができる(図8(b))。以上から、本実施の形態によれば、薄化加工後の半導体ウエハ10の取り扱いを容易としつつ、薄化加工時の半導体ウエハ10の破損を防止することができる。
(製造方法)
図10は、本実施の形態における半導体装置の製造方法の構成を概略的に示すフロー図である。ステップS40までの工程は実施の形態1(図2)のものと同様である。続くステップS50Mにて、実施の形態1のステップS51と同様の工程の後に、ステップS52が行われる。このステップS52は、実施の形態1のステップS70(図2)と同様にウエハ裏面S2上に電極層としてのコレクタ電極32(図1)を形成するものであるが、本実施の形態においては樹脂部材60(図3(d))を除去するステップS60の前に実施される。言い換えれば、本実施の形態においては、電極層としてのコレクタ電極32の形成が、樹脂部材60を除去する前の、ウエハ裏面S2上での処理として行われる。なお、上記以外の構成については、上述した実施の形態1の構成とほぼ同じである。
実施例においては、ウエハ裏面S2上に電極層が形成された後に、ウエハ上面S1上の樹脂部材60が除去された。続いて、ウエハ上面S1上に存在する、大きさ5μm以上の傷および異物の数がカウントされた。一方、比較例においては、樹脂部材60は形成されず、電極層が形成された後に上記と同様のカウントがなされた。なお、ウエハ裏面S2上における電極層の形成は、ウエハ上面S1を吸着することによって半導体ウエハ10を固定するステージを有する成膜装置によって行われた。上述したカウントの結果を以下に示す。
本実施の形態によれば、樹脂部材60が除去される前の処理として、ウエハ裏面S2上に電極層が形成される。これにより、ウエハ裏面S2での電極層の形成時に、ウエハ上面S1を樹脂部材60によって保護することができる。具体的には、ウエハ上面S1上に異物が付着したり、あるいはウエハ上面S1が損傷を受けたりすることが防止される。
(製造方法)
図11は、本実施の形態における半導体装置の製造方法の構成を概略的に示すフロー図である。ステップS50Mまでの工程は実施の形態2(図10)のものと同様である。その後、ステップS60Mにてダイシングが行われ、続いてステップS80Mにて樹脂部材60(図3(d))が除去される。言い換えれば、半導体ウエハ10は、樹脂部材60が除去される前にダイシングされる。樹脂部材60の除去は、たとえば、ダイシングフレーム上から有機溶剤を滴下することで樹脂を溶解することによって行い得る。あるいはアッシング処理が行われてもよい。なお、上記以外の構成については、上述した実施の形態2の構成とほぼ同じである。
薄化工程(ステップS40)までが、実施の形態1における実施例と同様の方法で、65μm厚まで行われた。実施例においては、ダイシングを行いかつウエハ上面S1上の樹脂部材60を除去した後に、ウエハ上面S1(チップ上面)上に存在する、ダイシングに起因した切り屑などの、大きさ10μm以上の異物数がカウントされた。一方、比較例においては、樹脂部材60は形成されず、ダイシング後に上記と同様のカウントがなされた。これらカウントの結果を以下に示す。
本実施の形態によれば、樹脂部材60が除去される前の処理として、半導体ウエハ10がダイシングされる。これにより、ダイシングの際に、ウエハ上面S1を樹脂部材60によって保護することができる。具体的には、ウエハ上面S1上に異物が付着することが防止される。
Claims (8)
- 第1のウエハ面と、前記第1のウエハ面と反対の第2のウエハ面と、ウエハ外周端と、を有する半導体ウエハを準備する工程と、
前記半導体ウエハの前記第1のウエハ面上に凹凸形状を形成する工程と、
前記凹凸形状を形成する工程の後に、前記半導体ウエハの前記第1のウエハ面上に、前記ウエハ外周端から離れた樹脂外周端を有し前記ウエハ外周端を露出する樹脂部材を塗布法を用いて形成する工程と、
前記半導体ウエハを部分的に除去することによって、前記半導体ウエハの前記第2のウエハ面に、前記樹脂外周端から0.5mm以上内側に位置する凹部外周端を有する凹部形状を形成する工程と、
前記凹部形状を形成する工程の後に、前記半導体ウエハの前記第2のウエハ面上での処理を行う工程と、
前記処理を行う工程の後に、前記樹脂部材を除去する工程と、
を備える、半導体装置の製造方法。 - 前記樹脂部材を形成する工程は、
前記第1のウエハ面上に前記樹脂部材を堆積する工程と、
前記樹脂部材を堆積する工程の後に、前記樹脂部材を平坦化する工程と、
を含む、請求項1に記載の半導体装置の製造方法。 - 前記処理を行う工程は、前記第2のウエハ面上に拡散層を形成する工程を含む、請求項1または2に記載の半導体装置の製造方法。
- 前記処理を行う工程は、前記第2のウエハ面上に電極層を形成する工程を含む、請求項1から3のいずれか1項に記載の半導体装置の製造方法。
- 前記樹脂部材を除去する工程の前に、前記半導体ウエハをダイシングする工程をさらに備える、請求項1から4のいずれか1項に記載の半導体装置の製造方法。
- 樹脂部材を形成する工程において、前記樹脂外周端は、前記ウエハ外周端から0.5mm以上内側に配置される、請求項1から5のいずれか1項に記載の半導体装置の製造方法。
- 前記樹脂部材を形成する工程は、スピンコーターによるリンス処理により前記樹脂部材の端部を除去する工程を含む、請求項1から6のいずれか1項に記載の半導体装置の製造方法。
- 前記樹脂部材を形成する工程は、粘着剤を用いずに行われる、請求項1から7のいずれか1項に記載の半導体装置の製造方法。
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