JP5413456B2 - 半導体基板用研磨液及び半導体基板の研磨方法 - Google Patents

半導体基板用研磨液及び半導体基板の研磨方法 Download PDF

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Publication number
JP5413456B2
JP5413456B2 JP2011510316A JP2011510316A JP5413456B2 JP 5413456 B2 JP5413456 B2 JP 5413456B2 JP 2011510316 A JP2011510316 A JP 2011510316A JP 2011510316 A JP2011510316 A JP 2011510316A JP 5413456 B2 JP5413456 B2 JP 5413456B2
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JP
Japan
Prior art keywords
polishing
semiconductor substrate
mass
polishing liquid
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2011510316A
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English (en)
Japanese (ja)
Other versions
JPWO2010122985A1 (ja
Inventor
豊 野村
茂 野部
仁 天野倉
直之 小山
文子 飛田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Showa Denko Materials Co Ltd
Original Assignee
Hitachi Chemical Co Ltd
Showa Denko Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd, Showa Denko Materials Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP2011510316A priority Critical patent/JP5413456B2/ja
Publication of JPWO2010122985A1 publication Critical patent/JPWO2010122985A1/ja
Application granted granted Critical
Publication of JP5413456B2 publication Critical patent/JP5413456B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2011510316A 2009-04-20 2010-04-19 半導体基板用研磨液及び半導体基板の研磨方法 Expired - Fee Related JP5413456B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011510316A JP5413456B2 (ja) 2009-04-20 2010-04-19 半導体基板用研磨液及び半導体基板の研磨方法

Applications Claiming Priority (14)

Application Number Priority Date Filing Date Title
JP2009101919 2009-04-20
JP2009101919 2009-04-20
JP2009101920 2009-04-20
JP2009101920 2009-04-20
JP2009102919 2009-04-21
JP2009102919 2009-04-21
JP2009173355 2009-07-24
JP2009173334 2009-07-24
JP2009173352 2009-07-24
JP2009173334 2009-07-24
JP2009173355 2009-07-24
JP2009173352 2009-07-24
JP2011510316A JP5413456B2 (ja) 2009-04-20 2010-04-19 半導体基板用研磨液及び半導体基板の研磨方法
PCT/JP2010/056948 WO2010122985A1 (ja) 2009-04-20 2010-04-19 半導体基板用研磨液及び半導体基板の研磨方法

Publications (2)

Publication Number Publication Date
JPWO2010122985A1 JPWO2010122985A1 (ja) 2012-10-25
JP5413456B2 true JP5413456B2 (ja) 2014-02-12

Family

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Family Applications (1)

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JP2011510316A Expired - Fee Related JP5413456B2 (ja) 2009-04-20 2010-04-19 半導体基板用研磨液及び半導体基板の研磨方法

Country Status (4)

Country Link
JP (1) JP5413456B2 (zh)
KR (1) KR101277342B1 (zh)
TW (1) TW201042019A (zh)
WO (1) WO2010122985A1 (zh)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8697576B2 (en) * 2009-09-16 2014-04-15 Cabot Microelectronics Corporation Composition and method for polishing polysilicon
TWI492290B (zh) * 2010-12-10 2015-07-11 Shibaura Mechatronics Corp Machining devices and machining methods
WO2012099845A2 (en) * 2011-01-21 2012-07-26 Cabot Microelectronics Corporation Silicon polishing compositions with improved psd performance
WO2012165016A1 (ja) * 2011-06-01 2012-12-06 日立化成工業株式会社 Ｃｍｐ研磨液及び半導体基板の研磨方法
CN102816530B (zh) * 2011-06-08 2016-01-27 安集微电子（上海）有限公司 一种化学机械抛光液
JP2013004910A (ja) * 2011-06-21 2013-01-07 Disco Abrasive Syst Ltd 埋め込み銅電極を有するウエーハの加工方法
KR101983868B1 (ko) 2011-10-24 2019-05-29 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물, 그것을 사용한 연마 방법 및 기판의 제조 방법
WO2013073025A1 (ja) * 2011-11-16 2013-05-23 日産化学工業株式会社 半導体ウェーハ用研磨液組成物
US20160122591A1 (en) * 2013-06-07 2016-05-05 Fujimi Incorporated Silicon wafer polishing composition
KR101750741B1 (ko) * 2013-07-24 2017-06-27 가부시끼가이샤 도꾸야마 Cmp용 실리카, 수성 분산액 및 cmp용 실리카의 제조 방법
WO2016181889A1 (ja) * 2015-05-08 2016-11-17 株式会社フジミインコーポレーテッド 研磨用組成物
JP6829191B2 (ja) * 2015-05-08 2021-02-10 株式会社フジミインコーポレーテッド 研磨方法
JP6747376B2 (ja) * 2017-05-15 2020-08-26 信越半導体株式会社 シリコンウエーハの研磨方法
IT201900006736A1 (it) 2019-05-10 2020-11-10 Applied Materials Inc Procedimenti di fabbricazione di package
US11931855B2 (en) * 2019-06-17 2024-03-19 Applied Materials, Inc. Planarization methods for packaging substrates
US11454884B2 (en) 2020-04-15 2022-09-27 Applied Materials, Inc. Fluoropolymer stamp fabrication method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000349266A (ja) * 1999-03-26 2000-12-15 Canon Inc 半導体部材の製造方法、半導体基体の利用方法、半導体部材の製造システム、半導体部材の生産管理方法及び堆積膜形成装置の利用方法
WO2005055302A1 (ja) * 2003-12-05 2005-06-16 Sumco Corporation 片面鏡面ウェーハの製造方法
JP2007214152A (ja) * 2006-02-07 2007-08-23 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP2007273910A (ja) * 2006-03-31 2007-10-18 Fujifilm Corp 研磨用組成液
JP2008277723A (ja) * 2007-03-30 2008-11-13 Fujifilm Corp 金属用研磨液及び研磨方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000349266A (ja) * 1999-03-26 2000-12-15 Canon Inc 半導体部材の製造方法、半導体基体の利用方法、半導体部材の製造システム、半導体部材の生産管理方法及び堆積膜形成装置の利用方法
WO2005055302A1 (ja) * 2003-12-05 2005-06-16 Sumco Corporation 片面鏡面ウェーハの製造方法
JP2007214152A (ja) * 2006-02-07 2007-08-23 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP2007273910A (ja) * 2006-03-31 2007-10-18 Fujifilm Corp 研磨用組成液
JP2008277723A (ja) * 2007-03-30 2008-11-13 Fujifilm Corp 金属用研磨液及び研磨方法

Also Published As

Publication number Publication date
TW201042019A (en) 2010-12-01
KR101277342B1 (ko) 2013-06-20
KR20120001766A (ko) 2012-01-04
WO2010122985A1 (ja) 2010-10-28
JPWO2010122985A1 (ja) 2012-10-25

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