JP2018535538A - Cmp用スラリー組成物及びこれを用いた研磨方法 - Google Patents
Cmp用スラリー組成物及びこれを用いた研磨方法 Download PDFInfo
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- 238000005498 polishing Methods 0.000 title claims abstract description 121
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- 239000000203 mixture Substances 0.000 title claims abstract description 91
- 238000000034 method Methods 0.000 title claims abstract description 49
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 81
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 81
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 79
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 73
- 229920005591 polysilicon Polymers 0.000 claims abstract description 72
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 63
- 239000000654 additive Substances 0.000 claims abstract description 62
- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- 239000002904 solvent Substances 0.000 claims abstract description 16
- 230000000996 additive effect Effects 0.000 claims description 49
- 239000002202 Polyethylene glycol Substances 0.000 claims description 24
- 229920001223 polyethylene glycol Polymers 0.000 claims description 24
- 150000002391 heterocyclic compounds Chemical class 0.000 claims description 22
- 239000008119 colloidal silica Substances 0.000 claims description 15
- 229920003169 water-soluble polymer Polymers 0.000 claims description 12
- 239000002245 particle Substances 0.000 claims description 9
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 claims description 8
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 claims description 8
- 239000003795 chemical substances by application Substances 0.000 claims description 8
- LRUDIIUSNGCQKF-UHFFFAOYSA-N 5-methyl-1H-benzotriazole Chemical compound C1=C(C)C=CC2=NNN=C21 LRUDIIUSNGCQKF-UHFFFAOYSA-N 0.000 claims description 7
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 claims description 3
- 239000004354 Hydroxyethyl cellulose Substances 0.000 claims description 3
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- 229920002125 Sokalan® Polymers 0.000 claims description 3
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 claims description 3
- 239000004584 polyacrylic acid Substances 0.000 claims description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 3
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 3
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 3
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 230000008569 process Effects 0.000 description 26
- 150000007524 organic acids Chemical class 0.000 description 21
- 239000000463 material Substances 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 4
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000002776 aggregation Effects 0.000 description 3
- 238000004220 aggregation Methods 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- AEJARLYXNFRVLK-UHFFFAOYSA-N 4H-1,2,3-triazole Chemical compound C1C=NN=N1 AEJARLYXNFRVLK-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000001361 adipic acid Substances 0.000 description 2
- 235000011037 adipic acid Nutrition 0.000 description 2
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
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- 239000002105 nanoparticle Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 235000005985 organic acids Nutrition 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 150000003536 tetrazoles Chemical class 0.000 description 2
- GIWQSPITLQVMSG-UHFFFAOYSA-N 1,2-dimethylimidazole Chemical compound CC1=NC=CN1C GIWQSPITLQVMSG-UHFFFAOYSA-N 0.000 description 1
- YSWBFLWKAIRHEI-UHFFFAOYSA-N 4,5-dimethyl-1h-imidazole Chemical compound CC=1N=CNC=1C YSWBFLWKAIRHEI-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 150000001412 amines Chemical group 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 150000001923 cyclic compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003995 emulsifying agent Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229920000831 ionic polymer Polymers 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 150000003009 phosphonic acids Chemical class 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
研磨剤であるコロイダルシリカを用意し、ポリエチレングリコール、ヘテロ環式化合物である5メチル−ベンゾトリアゾール、及び有機酸であるグルタル酸が含有された添加剤に溶媒としての脱イオン水を混合してそれぞれ研磨剤及び添加剤を用意し、前記添加剤のラインによって含有量を調節してシリコン酸化膜、シリコン窒化膜及びポリシリコン膜に対する選択比を調節して研磨するCMP用スラリー組成物を製造した。製造されたCMP用スラリー組成物にpH調節剤としてKOH、HNO3を添加してpHを3.5に調節した。製造されたCMP用スラリー組成物に含まれているスラリー含有量は、下記表1のとおりである。
実施例1において添加剤の種類と研磨剤、添加剤及び溶媒の含有量を除いては、実施例1と同様にしてCMP用スラリー組成物を製造した。製造されたCMP用スラリー組成物に含まれているスラリーの含有量は、下記表1のとおりである。
実施例1乃至10から製造されたCMPスラリー組成物を用いてシリコン酸化膜、シリコン窒化膜及びポリシリコン膜の研磨速度を評価した。このとき、研磨装備は、シティエス(CTS)社のCMP装備を使用した。
CMPスラリー組成物を用いてシリコン酸化膜、シリコン窒化膜及びポリシリコン膜の研磨速度を測定した結果を、下記表2に示した。
Claims (11)
- シリコン酸化膜、シリコン窒化膜及びポリシリコン膜に対する選択比を調節して研磨することができるように、
コロイダルシリカからなる研磨剤0.2乃至10重量%;及び
A:グルタル酸及び5−メチルベンゾトリアゾールを含み、B:ポリエチレングリコールを選択的に含む添加剤0.001乃至7重量%;を含有し、
残部が溶媒からなり、
前記添加剤は、ポリエチレングリコール、5−メチルベンゾトリアゾール及びグルタル酸の比率が0〜5.0:0〜5.0:0〜5.0であり、前記グルタル酸及び5−メチルベンゾトリアゾールはそれぞれ0を超える比率であり、
前記研磨は、シリコン酸化膜、シリコン窒化膜及びポリシリコン膜の研磨選択比が1:10〜20:1〜22.2であることを特徴とする、CMP用スラリー組成物。 - 前記コロイダルシリカは、粒子サイズが10〜120nmであることを特徴とする、請求項1に記載のCMP用スラリー組成物。
- 前記添加剤は、ポリシリコン膜に対して選択比の調節が可能なポリエチレングリコールと、シリコン窒化膜に対して選択比の調節が可能な5−メチルベンゾトリアゾール及びグルタル酸からなることを特徴とする、請求項1に記載のCMP用スラリー組成物。
- 前記CMP用スラリー組成物は水溶性高分子をさらに含むことを特徴とする、請求項1に記載のCMP用スラリー組成物。
- 前記水溶性高分子は、ポリビニルアルコール、ポリビニルピロリドン、ポリアクリル酸及びヒドロキシエチルセルロースよりなる群から選ばれる1種以上のものを選択することができ、組成物の総重量に対して水溶性高分子0.001〜5重量%を含むことを特徴とする、請求項8に記載のCMP用スラリー組成物。
- 前記CMP用スラリー組成物は3〜5のpHを有することを特徴とする、請求項1に記載のCMP用スラリー組成物。
- 前記CMP用スラリー組成物は、シリコン酸化膜、シリコン窒化膜及びポリシリコン膜の中から選ばれる2種以上で形成される被研磨膜を同時に研磨することを特徴とする、請求項1に記載のCMP用スラリー組成物。
- 前記CMP用スラリー組成物は研磨剤に添加剤を含ませて単一スラリーとして使用することを特徴とする、請求項1に記載のCMP用スラリー組成物。
- 請求項1乃至8のいずれか一項に記載のCMPスラリー組成物を用いて半導体ウエハーを研磨する段階を含むことを特徴とする、CMP用スラリー組成物を用いた研磨方法。
- 前記研磨方法は、研磨剤と添加剤がそれぞれ注入され、添加剤の含有量の調節によってシリコン酸化膜、シリコン窒化膜及びポリシリコン膜の選択比を調節して研磨することを特徴とする、請求項9に記載のCMP用スラリー組成物を用いた研磨方法。
- 前記添加剤は、ポリエチレングリコールの含有量の調節によってポリシリコン膜の選択比を調節して研磨させるものであり、ヘテロ環式化合物及びグルタル酸の含有量の調節によってシリコン窒化膜の選択比を調節して研磨させることを特徴とする、請求項9に記載のCMP用スラリー組成物を用いた研磨方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2015-0136057 | 2015-09-25 | ||
KR20150136057 | 2015-09-25 | ||
KR1020150155575A KR101628878B1 (ko) | 2015-09-25 | 2015-11-06 | Cmp용 슬러리 조성물 및 이를 이용한 연마방법 |
KR10-2015-0155575 | 2015-11-06 | ||
PCT/KR2016/010681 WO2017052280A1 (ko) | 2015-09-25 | 2016-09-23 | Cmp용 슬러리 조성물 및 이를 이용한 연마방법 |
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JP2018535538A true JP2018535538A (ja) | 2018-11-29 |
JP6581299B2 JP6581299B2 (ja) | 2019-09-25 |
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JP2018515004A Active JP6581299B2 (ja) | 2015-09-25 | 2016-09-23 | Cmp用スラリー組成物及びこれを用いた研磨方法 |
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US (1) | US10526508B2 (ja) |
JP (1) | JP6581299B2 (ja) |
KR (1) | KR101628878B1 (ja) |
CN (1) | CN108026434B (ja) |
WO (1) | WO2017052280A1 (ja) |
Cited By (2)
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JP2022520742A (ja) * | 2019-03-04 | 2022-04-01 | ヨンチャン ケミカル カンパニー リミテッド | シリコン酸化膜研磨用スラリー組成物及びそれを用いた研磨方法 |
WO2024043213A1 (ja) * | 2022-08-24 | 2024-02-29 | 株式会社ダイセル | 薄膜形成用組成物、及び半導体素子の製造方法 |
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WO2020091242A1 (ko) * | 2018-10-31 | 2020-05-07 | 영창케미칼 주식회사 | 구리 배리어층 연마용 슬러리 조성물 |
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US20180230334A1 (en) | 2018-08-16 |
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