JP5350655B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5350655B2 JP5350655B2 JP2008073142A JP2008073142A JP5350655B2 JP 5350655 B2 JP5350655 B2 JP 5350655B2 JP 2008073142 A JP2008073142 A JP 2008073142A JP 2008073142 A JP2008073142 A JP 2008073142A JP 5350655 B2 JP5350655 B2 JP 5350655B2
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- Prior art keywords
- semiconductor film
- transistor
- insulating film
- film
- semiconductor
- Prior art date
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Classifications
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/764—Air gaps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
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- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
Description
本発明の半導体装置において、半導体素子が有する半導体膜の構成について、図1(A)を用いて説明する。
本実施の形態では、本発明の半導体装置が有するトランジスタの、より具体的な構成について説明する。
本実施の形態では、半導体基板(ボンド基板)から、開口部を有する絶縁膜が形成された支持基板(ベース基板)に半導体膜を転置する、本発明の半導体装置の作製方法について説明する。
本実施の形態では、開口部を有する絶縁膜が形成された半導体基板(ボンド基板)と、支持基板(ベース基板)とを貼り合わせることで、半導体膜をベース基板に転置する、本発明の半導体装置の作製方法について説明する。
本実施の形態では、開口部を有する絶縁膜が形成された半導体基板(ボンド基板)と、開口部を有する絶縁膜が形成された支持基板(ベース基板)とを貼り合わせることで、半導体膜をベース基板に転置する、本発明の半導体装置の作製方法について説明する。
本実施の形態では、実施の形態3に示す作製方法を用いて形成された半導体膜で、トランジスタを作製する方法の一例について説明する。なお、実施の形態4または実施の形態5に示す作製方法を用いて形成された半導体膜でも、本実施の形態に示す作製方法でトランジスタを作製することは可能である。
101 絶縁膜
102 ベース基板
103 空洞
104 不純物領域
106 チャネル形成領域
107 ゲート絶縁膜
108 電極
110 半導体膜
111 不純物領域
113 チャネル形成領域
114 ゲート絶縁膜
115 電極
116 ベース基板
117 絶縁膜
118 空洞
120 半導体膜
121 電極
122 ゲート絶縁膜
123 不純物領域
125 チャネル形成領域
126 LDD領域
128 サイドウォール
129 ベース基板
130 空洞
131 絶縁膜
140 半導体膜
141 電極
142 ゲート絶縁膜
143 不純物領域
144 不純物領域
145 チャネル形成領域
146 LDD領域
148 サイドウォール
149 ベース基板
150 空洞
151 空洞
152 絶縁膜
160 半導体膜
161 電極
162 ゲート絶縁膜
163 不純物領域
165 チャネル形成領域
166 LDD領域
168 サイドウォール
169 ベース基板
171 絶縁膜
172 空洞
180 半導体膜
181 電極
182 ゲート絶縁膜
183 不純物領域
185 チャネル形成領域
186 LDD領域
188 サイドウォール
189 ベース基板
191 絶縁膜
192 空洞
200 ボンド基板
201 欠陥層
202 ベース基板
203 絶縁膜
204 開口部
205 半導体膜
206 半導体膜
207 空洞
210 トランジスタ
211 不純物領域
212 チャネル形成領域
300 ボンド基板
301 絶縁膜
302 欠陥層
303 開口部
304 ベース基板
305 半導体膜
306 空洞
310 ボンド基板
311 絶縁膜
312 欠陥層
313 開口部
314 ベース基板
315 開口部
316 絶縁膜
317 半導体膜
318 空洞
401 ベース基板
402 絶縁膜
403 半導体膜
404 半導体膜
405 空洞
406 空洞
407 ゲート絶縁膜
408 電極
410 不純物領域
411 不純物領域
412 サイドウォール
413 不純物領域
414 不純物領域
415 不純物領域
416 トランジスタ
417 トランジスタ
418 絶縁膜
419 絶縁膜
420 導電膜
421 導電膜
422 低濃度不純物領域
423 チャネル形成領域
424 チャネル形成領域
800 基板
801 演算回路
802 演算回路用制御部
803 命令解析部
804 制御部
805 タイミング制御部
806 レジスタ
807 レジスタ制御部
808 バスインターフェース
809 メモリ
820 メモリ用インターフェース
900 RFタグ
901 アンテナ
902 集積回路
903 電源回路
904 復調回路
905 変調回路
906 レギュレータ
907 制御回路
909 メモリ
1801 開口部
1802 絶縁膜
1803 ベース基板
1804 ボンド基板
1805 半導体膜
1806 半導体装置
2001 トランジスタ
2002 トランジスタ
2003 配線
2004 配線
2005 配線
2006 配線
2007 配線
2008 半導体膜
2009 空洞
2010 半導体膜
2011 空洞
2101 本体
2102 表示部
2103 音声入力部
2104 音声出力部
2105 操作キー
2401 筐体
2402 表示部
2403 スピーカー部
2601 本体
2602 表示部
2603 筐体
2604 外部接続ポート
2605 リモコン受信部
2606 受像部
2607 バッテリー
2608 音声入力部
2609 操作キー
2610 接眼部
3001 トランジスタ
3002 トランジスタ
3003 トランジスタ
3004 トランジスタ
3005 半導体膜
3006 半導体膜
3007 配線
3008 配線
3009 配線
3010 配線
3011 配線
3012 配線
3013 空洞
3014 空洞
Claims (1)
- ベース基板と、前記ベース基板上の複数の開口部が形成された絶縁膜と、前記複数の開口部以外の領域において前記絶縁膜に接する半導体膜と、前記半導体膜上のゲート絶縁膜と、前記ゲート絶縁膜上の電極と、を有し、
前記半導体膜は、前記ゲート絶縁膜を間に挟んで前記電極と重なるチャネル形成領域と、前記チャネル形成領域を挟む一対の不純物領域と、を有し、
前記チャネル形成領域は、前記複数の開口部と重なっており、
前記複数の開口部は、第1の開口部と、第2の開口部と、を有し、
前記第1の開口部は、前記一対の不純物領域の一方から他方に向かって設けられ、且つ、前記一対の不純物領域の一方及び他方の外部まで広がっており、
前記第2の開口部は、前記一対の不純物領域の一方から他方に向かって設けられ、且つ、前記一対の不純物領域の一方及び他方の外部まで広がっていることを特徴とする半導体装置。
Priority Applications (1)
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JP2008073142A JP5350655B2 (ja) | 2007-04-27 | 2008-03-21 | 半導体装置 |
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JP2007118086 | 2007-04-27 | ||
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JP2008073142A JP5350655B2 (ja) | 2007-04-27 | 2008-03-21 | 半導体装置 |
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JP2008294408A JP2008294408A (ja) | 2008-12-04 |
JP2008294408A5 JP2008294408A5 (ja) | 2011-03-31 |
JP5350655B2 true JP5350655B2 (ja) | 2013-11-27 |
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US (1) | US8664078B2 (ja) |
JP (1) | JP5350655B2 (ja) |
KR (1) | KR101478525B1 (ja) |
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JP5513157B2 (ja) * | 2010-02-18 | 2014-06-04 | 猛英 白土 | 半導体装置及びその製造方法 |
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FR2970812B1 (fr) | 2011-01-24 | 2013-11-15 | Commissariat Energie Atomique | Dispositif a effet de champ avec une faible capacité de jonction |
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CN104752424B (zh) * | 2013-12-27 | 2019-05-17 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制造方法和电子装置 |
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US9536999B2 (en) | 2014-09-08 | 2017-01-03 | Infineon Technologies Ag | Semiconductor device with control structure including buried portions and method of manufacturing |
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US8664078B2 (en) | 2014-03-04 |
US20080265323A1 (en) | 2008-10-30 |
KR20080096378A (ko) | 2008-10-30 |
JP2008294408A (ja) | 2008-12-04 |
KR101478525B1 (ko) | 2015-01-02 |
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