JP5345894B2 - 薄膜トランジスタ - Google Patents
薄膜トランジスタ Download PDFInfo
- Publication number
- JP5345894B2 JP5345894B2 JP2009117604A JP2009117604A JP5345894B2 JP 5345894 B2 JP5345894 B2 JP 5345894B2 JP 2009117604 A JP2009117604 A JP 2009117604A JP 2009117604 A JP2009117604 A JP 2009117604A JP 5345894 B2 JP5345894 B2 JP 5345894B2
- Authority
- JP
- Japan
- Prior art keywords
- carbon nanotube
- thin film
- film transistor
- semiconductor layer
- nanotube structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
Description
タに関するものである。
図1を参照すると、本発明の実施例1は、薄膜トランジスタ10を提供する。該薄膜トランジスタ10は、トップゲート型(Top Gate Type)薄膜トランジスタであり、絶縁基板110の一つの表面に形成される。該薄膜トランジスタ10は、ゲート電極120、絶縁層130、半導体層140、ソース電極151及びドレイン電極152を含む。
図5を参照すると、本発明の実施例2は、薄膜トランジスタ20を提供する。該薄膜トランジスタ20は、ボトムゲート型(Bottom Gate Type)薄膜トランジスタであり、絶縁基板210の一つの表面に形成される。該薄膜トランジスタ20は、ゲート電極220、絶縁層230、半導体層240、ソース電極251、ドレイン電極252を含む。
110、210 絶縁基板
120、220 ゲート電極
130、230 絶縁層
140、240 半導体層
151、251 ソース電極
152、252 ドレイン電極
156、256 チャンネル
Claims (4)
- ソース電極と、
前記ソース電極と分離して設置されるドレイン電極と、
前記ソース電極及び前記ドレイン電極に電気的に接続される半導体層と、
絶縁層と、
前記絶縁層により、前記半導体層と、前記ソース電極及び前記ドレイン電極と絶縁状態で設置されるゲート電極と、を含む薄膜トランジスタにおいて、
前記半導体層がカーボンナノチューブ構造体を含み、
前記カーボンナノチューブ構造体が複数のカーボンナノチューブを含み、
前記複数のカーボンナノチューブが所定の方向に沿って配列されているか、または、異なる複数の方向に沿って配列され、
前記カーボンナノチューブ構造体における複数のカーボンナノチューブが分子間力で相互に引き合い、接続され、
前記カーボンナノチューブ構造体が半導体性を有するカーボンナノチューブを含み、
前記ソース電極及び前記ドレイン電極は、導電フィルムであり、該導電フィルムが導電性カーボンナノチューブからなることを特徴とする薄膜トランジスタ。 - 前記半導体層の前記複数のカーボンナノチューブが、それぞれ前記カーボンナノチューブ構造体の表面と成す角度が0°〜15°であることを特徴とする、請求項1に記載の薄膜トランジスタ。
- 前記半導体層の隣接するカーボンナノチューブが分子間力で結合され、
前記カーボンナノチューブ構造体がシート状の自立構造を有することを特徴とする、請求項1又は2に記載の薄膜トランジスタ。 - 前記カーボンナノチューブ構造体における一部のカーボンナノチューブが前記ソース電極から前記ドレイン電極への方向に沿って配列されていることを特徴とする、請求項1から3のいずれか一項に記載の薄膜トランジスタ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200810067161.7 | 2008-05-14 | ||
CN2008100671617A CN101582446B (zh) | 2008-05-14 | 2008-05-14 | 薄膜晶体管 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009278108A JP2009278108A (ja) | 2009-11-26 |
JP5345894B2 true JP5345894B2 (ja) | 2013-11-20 |
Family
ID=41364496
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009117604A Active JP5345894B2 (ja) | 2008-05-14 | 2009-05-14 | 薄膜トランジスタ |
Country Status (3)
Country | Link |
---|---|
US (1) | US8053760B2 (ja) |
JP (1) | JP5345894B2 (ja) |
CN (1) | CN101582446B (ja) |
Families Citing this family (7)
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CN101880035A (zh) | 2010-06-29 | 2010-11-10 | 清华大学 | 碳纳米管结构 |
CN102231424B (zh) * | 2011-06-24 | 2014-04-30 | 清华大学 | 相变存储单元及相变存储器 |
CN102856495B (zh) * | 2011-06-30 | 2014-12-31 | 清华大学 | 压力调控薄膜晶体管及其应用 |
US9793361B2 (en) * | 2014-09-10 | 2017-10-17 | Boe Technology Group Co., Ltd. | Thin film transistor, array substrate and display device |
CN108365095A (zh) * | 2017-09-30 | 2018-08-03 | 广东聚华印刷显示技术有限公司 | 薄膜晶体管及其制备方法 |
CN112242441A (zh) * | 2019-07-16 | 2021-01-19 | 联华电子股份有限公司 | 高电子迁移率晶体管 |
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2008
- 2008-05-14 CN CN2008100671617A patent/CN101582446B/zh active Active
-
2009
- 2009-04-02 US US12/384,238 patent/US8053760B2/en active Active
- 2009-05-14 JP JP2009117604A patent/JP5345894B2/ja active Active
Also Published As
Publication number | Publication date |
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JP2009278108A (ja) | 2009-11-26 |
CN101582446B (zh) | 2011-02-02 |
CN101582446A (zh) | 2009-11-18 |
US20090321718A1 (en) | 2009-12-31 |
US8053760B2 (en) | 2011-11-08 |
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