JP5231324B2 - 薄膜トランジスタ - Google Patents
薄膜トランジスタ Download PDFInfo
- Publication number
- JP5231324B2 JP5231324B2 JP2009117602A JP2009117602A JP5231324B2 JP 5231324 B2 JP5231324 B2 JP 5231324B2 JP 2009117602 A JP2009117602 A JP 2009117602A JP 2009117602 A JP2009117602 A JP 2009117602A JP 5231324 B2 JP5231324 B2 JP 5231324B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film transistor
- carbon nanotube
- semiconductor layer
- source electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000010409 thin film Substances 0.000 title claims description 69
- 239000004065 semiconductor Substances 0.000 claims description 74
- 239000002238 carbon nanotube film Substances 0.000 claims description 54
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 45
- 239000002041 carbon nanotube Substances 0.000 claims description 44
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 44
- 239000000969 carrier Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 description 17
- 239000000463 material Substances 0.000 description 11
- 239000010408 film Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910052792 caesium Inorganic materials 0.000 description 3
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000002079 double walled nanotube Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002109 single walled nanotube Substances 0.000 description 2
- 239000007779 soft material Substances 0.000 description 2
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
- H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
Description
図1を参照すると、本発明の実施例1は、薄膜トランジスタ10を提供する。該薄膜トランジスタ10は、トップゲート型(Top Gate Type)薄膜トランジスタであり、絶縁基板110の一つの表面に形成される。該薄膜トランジスタ10は、ゲート電極120、絶縁層130、半導体層140、ソース電極151及びドレイン電極152を含む。
図6を参照すると、本発明の実施例2は、薄膜トランジスタ20を提供する。該薄膜トランジスタ20は、ボトムゲート型(Bottom Gate Type)薄膜トランジスタであり、絶縁基板210の一つの表面に形成される。該薄膜トランジスタ20は、ゲート電極220、絶縁層230、半導体層240、ソース電極251、ドレイン電極252を含む。
110、210 絶縁基板
120、220 ゲート電極
130、230 絶縁層
140、240 半導体層
143 カーボンナノチューブセグメント
145 カーボンナノチューブ
151、251 ソース電極
152、252 ドレイン電極
156、256 チャンネル
Claims (4)
- ソース電極と、
前記ソース電極と分離して設置されるドレイン電極と、
前記ソース電極及び前記ドレイン電極に電気的に接続される半導体層と、
絶縁層と、
前記絶縁層により、前記半導体層と、前記ソース電極及び前記ドレイン電極と絶縁状態で設置されるゲート電極と、
を含む薄膜トランジスタにおいて、
前記半導体層が積層された少なくとも二枚のカーボンナノチューブフィルムを含み、
各々のカーボンナノチューブフィルムが端と端で接続され、同じ方向に沿って配列された複数のカーボンナノチューブからなり、
隣接する前記カーボンナノチューブフィルムにおけるカーボンナノチューブが、0°〜90°(0°は含まず)で交叉しており、
前記カーボンナノチューブフィルムが半導体性を有するカーボンナノチューブを含むことを特徴とする薄膜トランジスタ。 - 前記隣接するカーボンナノチューブフィルムが分子間力で接続されていることを特徴とする、請求項1に記載の薄膜トランジスタ。
- 前記少なくとも二枚のカーボンナノチューブフィルムにおいて、少なくとも一枚のカーボンナノチューブフィルムにおけるカーボンナノチューブが前記ソース電極から前記ドレイン電極への方向に沿って配列されていることを特徴とする、請求項1又は2に記載の薄膜トランジスタ。
- 前記薄膜トランジスタのキャリヤーの移動度が10cm2/Vs〜1500cm2/Vsであり、オン/オフ電流比が1.0×102〜1.0×106であることを特徴とする、請求項1から3のいずれか一項に記載の薄膜トランジスタ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008100671640A CN101582447B (zh) | 2008-05-14 | 2008-05-14 | 薄膜晶体管 |
CN200810067164.0 | 2008-05-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009278106A JP2009278106A (ja) | 2009-11-26 |
JP5231324B2 true JP5231324B2 (ja) | 2013-07-10 |
Family
ID=41315302
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009117602A Active JP5231324B2 (ja) | 2008-05-14 | 2009-05-14 | 薄膜トランジスタ |
Country Status (3)
Country | Link |
---|---|
US (1) | US7973305B2 (ja) |
JP (1) | JP5231324B2 (ja) |
CN (1) | CN101582447B (ja) |
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CN101880035A (zh) | 2010-06-29 | 2010-11-10 | 清华大学 | 碳纳米管结构 |
US9024310B2 (en) * | 2011-01-12 | 2015-05-05 | Tsinghua University | Epitaxial structure |
TWI479547B (zh) * | 2011-05-04 | 2015-04-01 | Univ Nat Cheng Kung | 薄膜電晶體之製備方法及頂閘極式薄膜電晶體 |
US20120319113A1 (en) * | 2011-06-17 | 2012-12-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
CN103187451B (zh) * | 2012-01-03 | 2017-04-05 | 管炜 | 薄膜晶体管 |
US9379166B2 (en) * | 2014-11-04 | 2016-06-28 | Atom Nanoelectronics, Inc. | Active matrix light emitting diodes display module with carbon nanotubes control circuits and methods of fabrication |
KR102573690B1 (ko) * | 2016-09-30 | 2023-09-04 | 엘지디스플레이 주식회사 | 박막트랜지스터 어레이 기판 및 이를 포함하는 표시장치 |
WO2019009101A1 (ja) * | 2017-07-07 | 2019-01-10 | 東レ株式会社 | 導電膜の製造方法、それを用いた電界効果型トランジスタの製造方法および無線通信装置の製造方法 |
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-
2008
- 2008-05-14 CN CN2008100671640A patent/CN101582447B/zh active Active
-
2009
- 2009-04-02 US US12/384,299 patent/US7973305B2/en active Active
- 2009-05-14 JP JP2009117602A patent/JP5231324B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
CN101582447B (zh) | 2010-09-29 |
US20090283771A1 (en) | 2009-11-19 |
US7973305B2 (en) | 2011-07-05 |
JP2009278106A (ja) | 2009-11-26 |
CN101582447A (zh) | 2009-11-18 |
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