JP5311162B1 - 部品実装基板の製造方法 - Google Patents
部品実装基板の製造方法 Download PDFInfo
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- JP5311162B1 JP5311162B1 JP2012140083A JP2012140083A JP5311162B1 JP 5311162 B1 JP5311162 B1 JP 5311162B1 JP 2012140083 A JP2012140083 A JP 2012140083A JP 2012140083 A JP2012140083 A JP 2012140083A JP 5311162 B1 JP5311162 B1 JP 5311162B1
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- component mounting
- printed wiring
- conductive paste
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- board
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- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 239000000463 material Substances 0.000 claims abstract description 36
- 239000012790 adhesive layer Substances 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000002344 surface layer Substances 0.000 claims abstract description 5
- 229920005989 resin Polymers 0.000 claims description 25
- 239000011347 resin Substances 0.000 claims description 25
- 239000010410 layer Substances 0.000 claims description 11
- 238000010030 laminating Methods 0.000 claims description 2
- 229910000679 solder Inorganic materials 0.000 description 12
- 239000000853 adhesive Substances 0.000 description 10
- 230000001070 adhesive effect Effects 0.000 description 10
- 239000011229 interlayer Substances 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000011889 copper foil Substances 0.000 description 5
- 239000002923 metal particle Substances 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 229920000106 Liquid crystal polymer Polymers 0.000 description 3
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910000765 intermetallic Inorganic materials 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000002966 varnish Substances 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000003522 acrylic cement Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229960003280 cupric chloride Drugs 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 229920006259 thermoplastic polyimide Polymers 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
Landscapes
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Wire Bonding (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
【解決手段】部品実装基板1は、基板の表層に形成された接着層41と、接着層41上に形成された、電子部品110,120の実装箇所が開口された部品実装部42,43を有するフィルム材40と、接着層41における基板の配線12a,12b上のビア開口45に充填形成された導電性ペーストビア44と、導電性ペーストビア44に電極111,121が接続されるようにフィルム材40の部品実装部42,43内の接着層41上に実装された電子部品110,120とを備え、電子部品110,120の電極111,121と導電性ペーストビア44とが直接接続されている。
【選択図】図1
Description
図2A及び図2Bは、部品実装基板の製造方法による製造工程を示すフローチャートである。また、図3〜図6は、部品実装基板を製造工程毎に示す断面図である。なお、第2及び第3プリント配線板20,30については、第1プリント配線板10の製造工程と同様の工程で製造することができるので、特に明記しない限りここでは説明を省略する。
1A 部品実装基板実装体
2 ビアホール
9,41 接着層
10 第1プリント配線板
11 第1樹脂基材
12a,12b 配線
13,23 層間接続用ビア
20 第2プリント配線板
21 第2樹脂基材
22 配線
30 第3プリント配線板
31 第3樹脂基材
32 配線
40 フィルム材
42,43 部品実装部
44 導電性ペーストビア
45 ビア開口
110,120 電子部品
Claims (1)
- 樹脂基材に配線パッドを含む配線パターン及びビアが形成されたプリント配線板を複数積層すると共に電子部品を表面実装してなる部品実装基板の製造方法であって、
複数の樹脂基材に前記配線パターン及びビアの少なくとも一つを形成して複数のプリント配線板を形成する工程と、
表層となる前記プリント配線板の表面に、前記配線パッドの上にビア開口が形成された接着層を形成する工程と、
前記接着層における前記ビア開口に導電性ペーストを充填し、導電性ペーストビアを形成する工程と、
前記導電性ペーストビアに電極が直接接続されるように前記電子部品を前記接着層上に実装する工程と、
前記電子部品が実装された前記プリント配線板上に副資材を配置して複数の前記プリント配線板を200℃以下の温度で熱圧着して一括積層する工程とを備えた
ことを特徴とする部品実装基板の製造方法。
Priority Applications (1)
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---|---|---|---|
JP2012140083A JP5311162B1 (ja) | 2012-06-21 | 2012-06-21 | 部品実装基板の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2012140083A JP5311162B1 (ja) | 2012-06-21 | 2012-06-21 | 部品実装基板の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP5311162B1 true JP5311162B1 (ja) | 2013-10-09 |
JP2014007197A JP2014007197A (ja) | 2014-01-16 |
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JP2012140083A Active JP5311162B1 (ja) | 2012-06-21 | 2012-06-21 | 部品実装基板の製造方法 |
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JP (1) | JP5311162B1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6489290B2 (ja) | 2016-08-03 | 2019-03-27 | 株式会社村田製作所 | 変形検知センサ、電子機器、および変形検知センサの製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3217711B2 (ja) * | 1996-09-27 | 2001-10-15 | 株式会社栗田工業 | 床暖房方法及び床暖房に使用する放熱管 |
US20080223606A1 (en) * | 2004-09-03 | 2008-09-18 | Murata Manufacturing Co., Ltd. | Ceramic Substrate and Method for Manufacturing the Same |
CN101213890B (zh) * | 2005-07-12 | 2012-02-01 | 株式会社村田制作所 | 多层布线基板及其制造方法 |
JP5459134B2 (ja) * | 2009-07-31 | 2014-04-02 | 大日本印刷株式会社 | 半導体パッケージ内蔵配線板、及び半導体パッケージ内蔵配線板の製造方法 |
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