US4310390A
(en)
*
|
1977-08-10 |
1982-01-12 |
Lockheed Corporation |
Protective coating process for aluminum and aluminum alloys
|
US4357387A
(en)
|
1981-08-20 |
1982-11-02 |
Subtex, Inc. |
Flame resistant insulating fabric compositions prepared by plasma spraying
|
JPS5857491A
(ja)
|
1981-09-30 |
1983-04-05 |
Sony Corp |
緑色螢光体の製造方法
|
JPH065155B2
(ja)
|
1984-10-12 |
1994-01-19 |
住友金属工業株式会社 |
窯炉の炉壁補修装置
|
US4593007A
(en)
*
|
1984-12-06 |
1986-06-03 |
The Perkin-Elmer Corporation |
Aluminum and silica clad refractory oxide thermal spray powder
|
US4612077A
(en)
|
1985-07-29 |
1986-09-16 |
The Perkin-Elmer Corporation |
Electrode for plasma etching system
|
US4842683A
(en)
*
|
1986-12-19 |
1989-06-27 |
Applied Materials, Inc. |
Magnetic field-enhanced plasma etch reactor
|
US5000113A
(en)
*
|
1986-12-19 |
1991-03-19 |
Applied Materials, Inc. |
Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
|
US4877757A
(en)
|
1987-07-16 |
1989-10-31 |
Texas Instruments Incorporated |
Method of sequential cleaning and passivating a GaAs substrate using remote oxygen plasma
|
NO163412B
(no)
|
1988-01-25 |
1990-02-12 |
Elkem Technology |
Plasmalanse.
|
EP0407945B1
(en)
*
|
1989-07-11 |
1995-01-04 |
Sony Corporation |
Method of heat-treating an oxide optical crystal and a heat treatment apparatus for carrying out the same
|
US5334462A
(en)
*
|
1989-09-08 |
1994-08-02 |
United Technologies Corporation |
Ceramic material and insulating coating made thereof
|
US5556501A
(en)
|
1989-10-03 |
1996-09-17 |
Applied Materials, Inc. |
Silicon scavenger in an inductively coupled RF plasma reactor
|
US5126102A
(en)
|
1990-03-15 |
1992-06-30 |
Kabushiki Kaisha Toshiba |
Fabricating method of composite material
|
DE4109979C2
(de)
|
1990-03-28 |
2000-03-30 |
Nisshin Flour Milling Co |
Verfahren zur Herstellung beschichteter Teilchen aus anorganischen oder metallischen Materialien
|
US5180467A
(en)
|
1990-08-08 |
1993-01-19 |
Vlsi Technology, Inc. |
Etching system having simplified diffuser element removal
|
US5074456A
(en)
|
1990-09-18 |
1991-12-24 |
Lam Research Corporation |
Composite electrode for plasma processes
|
DE4103994A1
(de)
|
1991-02-11 |
1992-08-13 |
Inst Elektroswarki Patona |
Schutzueberzug vom typ metall-keramik fuer einzelteile aus hitzebestaendigen legierungen
|
EP0508731B1
(en)
|
1991-04-09 |
1996-09-18 |
The Tokyo Electric Power Co., Inc. |
Use of an oxide coating to enhance the resistance to oxidation and corrosion of a silicon nitride based gas turbine blade
|
JP3175189B2
(ja)
|
1991-05-13 |
2001-06-11 |
ソニー株式会社 |
減圧cvd装置
|
WO1993024275A1
(en)
|
1992-06-01 |
1993-12-09 |
Ice Blast International Ltd. |
Particle blasting utilizing crystalline ice
|
KR940006221A
(ko)
|
1992-06-05 |
1994-03-23 |
제임스 조셉 드롱 |
집적회로구성 공정처리장치
|
US5423936A
(en)
*
|
1992-10-19 |
1995-06-13 |
Hitachi, Ltd. |
Plasma etching system
|
DE69330719T2
(de)
*
|
1992-12-28 |
2002-07-04 |
Nippon Zeon Co., Ltd. |
Gegenstand mit harter beschichtung und verfahren zu seiner herstellung
|
US5366585A
(en)
*
|
1993-01-28 |
1994-11-22 |
Applied Materials, Inc. |
Method and apparatus for protection of conductive surfaces in a plasma processing reactor
|
US5362335A
(en)
|
1993-03-25 |
1994-11-08 |
General Motors Corporation |
Rare earth coating process for aluminum alloys
|
KR100324792B1
(ko)
*
|
1993-03-31 |
2002-06-20 |
히가시 데쓰로 |
플라즈마처리장치
|
US5891253A
(en)
*
|
1993-05-14 |
1999-04-06 |
Applied Materials, Inc. |
Corrosion resistant apparatus
|
US5551190A
(en)
|
1993-05-19 |
1996-09-03 |
Ohi Seisakusho Co., Ltd. |
Slide door driving system
|
US5614055A
(en)
*
|
1993-08-27 |
1997-03-25 |
Applied Materials, Inc. |
High density plasma CVD and etching reactor
|
US5484752A
(en)
*
|
1993-11-12 |
1996-01-16 |
Ube Industries, Ltd. |
Ceramic composite material
|
JP3308091B2
(ja)
*
|
1994-02-03 |
2002-07-29 |
東京エレクトロン株式会社 |
表面処理方法およびプラズマ処理装置
|
US5798016A
(en)
*
|
1994-03-08 |
1998-08-25 |
International Business Machines Corporation |
Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability
|
US5680013A
(en)
|
1994-03-15 |
1997-10-21 |
Applied Materials, Inc. |
Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces
|
US5900103A
(en)
*
|
1994-04-20 |
1999-05-04 |
Tokyo Electron Limited |
Plasma treatment method and apparatus
|
US5651723A
(en)
|
1994-04-13 |
1997-07-29 |
Viratec Thin Films, Inc. |
Method and apparatus for cleaning substrates in preparation for deposition of thin film coatings
|
US5521790A
(en)
*
|
1994-05-12 |
1996-05-28 |
International Business Machines Corporation |
Electrostatic chuck having relatively thick and thin areas and means for uniformly cooling said thick and thin areas during chuck anodization
|
US5895586A
(en)
*
|
1994-05-17 |
1999-04-20 |
Hitachi, Ltd. |
Plasma processing apparatus and plasma processing method in which a part of the processing chamber is formed using a pre-fluorinated material of aluminum
|
US5641375A
(en)
*
|
1994-08-15 |
1997-06-24 |
Applied Materials, Inc. |
Plasma etching reactor with surface protection means against erosion of walls
|
DE9421671U1
(de)
|
1994-08-26 |
1996-07-11 |
Siemens AG, 80333 München |
Entladungskammer für eine Plasmaätzanlage in der Halbleiterfertigung
|
US5885356A
(en)
*
|
1994-11-30 |
1999-03-23 |
Applied Materials, Inc. |
Method of reducing residue accumulation in CVD chamber using ceramic lining
|
US5891350A
(en)
*
|
1994-12-15 |
1999-04-06 |
Applied Materials, Inc. |
Adjusting DC bias voltage in plasma chambers
|
EP0722919B1
(en)
*
|
1995-01-19 |
1999-08-11 |
Ube Industries, Ltd. |
Ceramic composite
|
US5759360A
(en)
*
|
1995-03-13 |
1998-06-02 |
Applied Materials, Inc. |
Wafer clean sputtering process
|
US6296740B1
(en)
|
1995-04-24 |
2001-10-02 |
Si Diamond Technology, Inc. |
Pretreatment process for a surface texturing process
|
US5534356A
(en)
|
1995-04-26 |
1996-07-09 |
Olin Corporation |
Anodized aluminum substrate having increased breakdown voltage
|
JP3595608B2
(ja)
|
1995-05-30 |
2004-12-02 |
アネルバ株式会社 |
真空処理装置、真空処理装置における真空容器内面堆積膜除去方法及び真空処理装置における真空容器内面膜堆積均一化方法
|
JP3208044B2
(ja)
*
|
1995-06-07 |
2001-09-10 |
東京エレクトロン株式会社 |
プラズマ処理装置及びプラズマ処理方法
|
TW323387B
(ja)
*
|
1995-06-07 |
1997-12-21 |
Tokyo Electron Co Ltd |
|
JP3164200B2
(ja)
*
|
1995-06-15 |
2001-05-08 |
住友金属工業株式会社 |
マイクロ波プラズマ処理装置
|
US5534751A
(en)
*
|
1995-07-10 |
1996-07-09 |
Lam Research Corporation |
Plasma etching apparatus utilizing plasma confinement
|
DE19529627C1
(de)
|
1995-08-11 |
1997-01-16 |
Siemens Ag |
Thermisch leitende, elektrisch isolierende Verbindung und Verfahren zu seiner Herstellung
|
EP0777258A3
(en)
*
|
1995-11-29 |
1997-09-17 |
Applied Materials Inc |
Self-cleaning plasma processing reactor
|
US5894887A
(en)
*
|
1995-11-30 |
1999-04-20 |
Applied Materials, Inc. |
Ceramic dome temperature control using heat pipe structure and method
|
US6373573B1
(en)
*
|
2000-03-13 |
2002-04-16 |
Lj Laboratories L.L.C. |
Apparatus for measuring optical characteristics of a substrate and pigments applied thereto
|
US5985102A
(en)
|
1996-01-29 |
1999-11-16 |
Micron Technology, Inc. |
Kit for electrically isolating collimator of PVD chamber, chamber so modified, and method of using
|
US5955182A
(en)
|
1996-02-05 |
1999-09-21 |
Kabushiki Kaisha Toshiba |
Heat resisting member and its production method
|
JPH09235662A
(ja)
|
1996-02-28 |
1997-09-09 |
Nittetsu Hard Kk |
溶射皮膜の形成方法
|
CN1074689C
(zh)
|
1996-04-04 |
2001-11-14 |
E·O·帕通电子焊接研究院电子束工艺国际中心 |
基体上制备有跨厚度化学组成和结构梯度并陶瓷外层方法
|
US6108189A
(en)
|
1996-04-26 |
2000-08-22 |
Applied Materials, Inc. |
Electrostatic chuck having improved gas conduits
|
CA2205817C
(en)
|
1996-05-24 |
2004-04-06 |
Sekisui Chemical Co., Ltd. |
Treatment method in glow-discharge plasma and apparatus thereof
|
US5892278A
(en)
*
|
1996-05-24 |
1999-04-06 |
Dai Nippon Printingco., Ltd. |
Aluminum and aluminum alloy radiator for semiconductor device and process for producing the same
|
JP3050124B2
(ja)
*
|
1996-05-27 |
2000-06-12 |
住友金属工業株式会社 |
プラズマ処理装置
|
US6092486A
(en)
*
|
1996-05-27 |
2000-07-25 |
Sumimoto Metal Indsutries, Ltd. |
Plasma processing apparatus and plasma processing method
|
US5820723A
(en)
|
1996-06-05 |
1998-10-13 |
Lam Research Corporation |
Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
|
US5952060A
(en)
|
1996-06-14 |
1999-09-14 |
Applied Materials, Inc. |
Use of carbon-based films in extending the lifetime of substrate processing system components
|
JP3241270B2
(ja)
*
|
1996-06-25 |
2001-12-25 |
日本政策投資銀行 |
熱電変換装置
|
US5885402A
(en)
*
|
1996-07-17 |
1999-03-23 |
Applied Materials |
Diagnostic head assembly for plasma chamber
|
US5904778A
(en)
|
1996-07-26 |
1999-05-18 |
Applied Materials, Inc. |
Silicon carbide composite article particularly useful for plasma reactors
|
US5882411A
(en)
|
1996-10-21 |
1999-03-16 |
Applied Materials, Inc. |
Faceplate thermal choke in a CVD plasma reactor
|
US6120640A
(en)
|
1996-12-19 |
2000-09-19 |
Applied Materials, Inc. |
Boron carbide parts and coatings in a plasma reactor
|
US6301004B1
(en)
*
|
2000-05-31 |
2001-10-09 |
Lj Laboratories, L.L.C. |
Apparatus and method for measuring optical characteristics of an object
|
US5925228A
(en)
*
|
1997-01-09 |
1999-07-20 |
Sandia Corporation |
Electrophoretically active sol-gel processes to backfill, seal, and/or densify porous, flawed, and/or cracked coatings on electrically conductive material
|
US5800621A
(en)
*
|
1997-02-10 |
1998-09-01 |
Applied Materials, Inc. |
Plasma source for HDP-CVD chamber
|
US5843239A
(en)
*
|
1997-03-03 |
1998-12-01 |
Applied Materials, Inc. |
Two-step process for cleaning a substrate processing chamber
|
DE19710977A1
(de)
|
1997-03-17 |
1998-09-24 |
Clariant Gmbh |
Illustrationstiefdruckfarbe auf Basis von C.I.Pigment Yellow 139
|
US5900064A
(en)
*
|
1997-05-01 |
1999-05-04 |
Applied Materials, Inc. |
Plasma process chamber
|
US5851343A
(en)
|
1997-05-16 |
1998-12-22 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Protective shield around the inner edge of endpoint window in a plasma etching chamber
|
US5994662A
(en)
|
1997-05-29 |
1999-11-30 |
Applied Materials, Inc. |
Unique baffle to deflect remote plasma clean gases
|
US6143646A
(en)
|
1997-06-03 |
2000-11-07 |
Motorola Inc. |
Dual in-laid integrated circuit structure with selectively positioned low-K dielectric isolation and method of formation
|
KR100226708B1
(ko)
|
1997-06-26 |
1999-10-15 |
전주범 |
직교분할대역 채널 등화기의 계수 메모리를 위한 어드레스 발생 장치
|
JP3707229B2
(ja)
|
1997-06-27 |
2005-10-19 |
コニカミノルタビジネステクノロジーズ株式会社 |
電子写真感光体およびこれを用いた電子写真画像形成装置
|
JP3362113B2
(ja)
|
1997-07-15 |
2003-01-07 |
日本碍子株式会社 |
耐蝕性部材、ウエハー設置部材および耐蝕性部材の製造方法
|
JPH1136076A
(ja)
*
|
1997-07-16 |
1999-02-09 |
Tokyo Electron Ltd |
Cvd成膜装置およびcvd成膜方法
|
JP3779444B2
(ja)
|
1997-07-28 |
2006-05-31 |
富士写真フイルム株式会社 |
赤外線レーザ用ポジ型感光性組成物
|
KR19990008937U
(ko)
|
1997-08-13 |
1999-03-05 |
이문세 |
방음벽 조립체
|
US6161500A
(en)
*
|
1997-09-30 |
2000-12-19 |
Tokyo Electron Limited |
Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions
|
US6079356A
(en)
|
1997-12-02 |
2000-06-27 |
Applied Materials, Inc. |
Reactor optimized for chemical vapor deposition of titanium
|
US6106625A
(en)
*
|
1997-12-02 |
2000-08-22 |
Applied Materials, Inc. |
Reactor useful for chemical vapor deposition of titanium nitride
|
KR100258984B1
(ko)
*
|
1997-12-24 |
2000-08-01 |
윤종용 |
건식 식각 장치
|
JP4217299B2
(ja)
|
1998-03-06 |
2009-01-28 |
東京エレクトロン株式会社 |
処理装置
|
US6129808A
(en)
*
|
1998-03-31 |
2000-10-10 |
Lam Research Corporation |
Low contamination high density plasma etch chambers and methods for making the same
|
KR100602072B1
(ko)
*
|
1998-03-31 |
2006-07-14 |
램 리서치 코포레이션 |
오염 제어 방법 및 플라즈마 공정 챔버
|
KR100265288B1
(ko)
*
|
1998-04-22 |
2000-10-02 |
윤종용 |
반도체소자 제조용 식각장치의 배플
|
JP4037956B2
(ja)
*
|
1998-04-28 |
2008-01-23 |
東海カーボン株式会社 |
チャンバー内壁保護部材
|
JP3810039B2
(ja)
*
|
1998-05-06 |
2006-08-16 |
キヤノン株式会社 |
ステージ装置
|
US6246479B1
(en)
*
|
1998-06-08 |
2001-06-12 |
Lj Laboratories, L.L.C. |
Integrated spectrometer assembly and methods
|
US6335293B1
(en)
*
|
1998-07-13 |
2002-01-01 |
Mattson Technology, Inc. |
Systems and methods for two-sided etch of a semiconductor substrate
|
US6182603B1
(en)
*
|
1998-07-13 |
2001-02-06 |
Applied Komatsu Technology, Inc. |
Surface-treated shower head for use in a substrate processing chamber
|
US6123791A
(en)
|
1998-07-29 |
2000-09-26 |
Applied Materials, Inc. |
Ceramic composition for an apparatus and method for processing a substrate
|
US6389506B1
(en)
*
|
1998-08-07 |
2002-05-14 |
Cisco Technology, Inc. |
Block mask ternary cam
|
JP4162773B2
(ja)
*
|
1998-08-31 |
2008-10-08 |
東京エレクトロン株式会社 |
プラズマ処理装置および検出窓
|
US6170429B1
(en)
*
|
1998-09-30 |
2001-01-09 |
Lam Research Corporation |
Chamber liner for semiconductor process chambers
|
JP3030287B1
(ja)
|
1998-10-09 |
2000-04-10 |
株式会社協同インターナショナル |
成膜装置のクリーニング方法、スパッタリングターゲットのクリーニング方法及びこれらに使用するクリーニング装置
|
JP2000124197A
(ja)
|
1998-10-16 |
2000-04-28 |
Hitachi Ltd |
プラズマ処理装置
|
US6383964B1
(en)
*
|
1998-11-27 |
2002-05-07 |
Kyocera Corporation |
Ceramic member resistant to halogen-plasma corrosion
|
US6178919B1
(en)
*
|
1998-12-28 |
2001-01-30 |
Lam Research Corporation |
Perforated plasma confinement ring in plasma reactors
|
US6123804A
(en)
|
1999-02-22 |
2000-09-26 |
Applied Materials, Inc. |
Sectional clamp ring
|
US6221202B1
(en)
*
|
1999-04-01 |
2001-04-24 |
International Business Machines Corporation |
Efficient plasma containment structure
|
TW465017B
(en)
|
1999-04-13 |
2001-11-21 |
Applied Materials Inc |
A corrosion-resistant protective coating for an apparatus and method for processing a substrate
|
JP3911902B2
(ja)
|
1999-04-16 |
2007-05-09 |
東京エレクトロン株式会社 |
処理装置及び金属部品の表面処理方法
|
US6444083B1
(en)
|
1999-06-30 |
2002-09-03 |
Lam Research Corporation |
Corrosion resistant component of semiconductor processing equipment and method of manufacturing thereof
|
JP2001023959A
(ja)
|
1999-07-05 |
2001-01-26 |
Mitsubishi Electric Corp |
プラズマ処理装置
|
JP2001031484A
(ja)
|
1999-07-22 |
2001-02-06 |
Nihon Ceratec Co Ltd |
耐食性複合部材
|
US6387817B1
(en)
|
1999-09-07 |
2002-05-14 |
Agere Systems Guardian Corp. |
Plasma confinement shield
|
JP4285853B2
(ja)
*
|
1999-09-08 |
2009-06-24 |
東京エレクトロン株式会社 |
処理方法
|
US6296716B1
(en)
|
1999-10-01 |
2001-10-02 |
Saint-Gobain Ceramics And Plastics, Inc. |
Process for cleaning ceramic articles
|
US6364949B1
(en)
*
|
1999-10-19 |
2002-04-02 |
Applied Materials, Inc. |
300 mm CVD chamber design for metal-organic thin film deposition
|
US6265757B1
(en)
*
|
1999-11-09 |
2001-07-24 |
Agere Systems Guardian Corp. |
Forming attached features on a semiconductor substrate
|
JP2001152307A
(ja)
|
1999-11-29 |
2001-06-05 |
Nippon Steel Hardfacing Co Ltd |
耐食性を有し、長期間使用に耐える複合皮膜の形成方法およびその複合皮膜を有する部材
|
TW514996B
(en)
|
1999-12-10 |
2002-12-21 |
Tokyo Electron Ltd |
Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
|
JP3510993B2
(ja)
|
1999-12-10 |
2004-03-29 |
トーカロ株式会社 |
プラズマ処理容器内部材およびその製造方法
|
US6362888B1
(en)
*
|
1999-12-23 |
2002-03-26 |
Lj Laboratories, L.L.C. |
Spectrometer assembly
|
US6519037B2
(en)
*
|
1999-12-23 |
2003-02-11 |
Lj Laboratories, Llc |
Spectrometer having optical unit including a randomized fiber optic implement
|
JP3567855B2
(ja)
*
|
2000-01-20 |
2004-09-22 |
住友電気工業株式会社 |
半導体製造装置用ウェハ保持体
|
JP4272786B2
(ja)
|
2000-01-21 |
2009-06-03 |
トーカロ株式会社 |
静電チャック部材およびその製造方法
|
DE20104654U1
(de)
|
2000-03-15 |
2001-09-13 |
Preising, Paul-Eric, 50968 Köln |
Reinigungsvorrichtung für hochspannungsführende Anlagenteile
|
TW503449B
(en)
|
2000-04-18 |
2002-09-21 |
Ngk Insulators Ltd |
Halogen gas plasma-resistive members and method for producing the same, laminates, and corrosion-resistant members
|
JP4422295B2
(ja)
|
2000-05-17 |
2010-02-24 |
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Cvd装置
|
TWI290589B
(en)
*
|
2000-10-02 |
2007-12-01 |
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|
US6413578B1
(en)
|
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2002-07-02 |
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|
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(ja)
|
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|
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(ja)
*
|
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|
US20020090464A1
(en)
*
|
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2002-07-11 |
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|
US20040081746A1
(en)
*
|
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|
US6630201B2
(en)
*
|
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|
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(en)
*
|
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|
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(en)
|
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|
US6533910B2
(en)
*
|
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|
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(en)
*
|
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|
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(en)
|
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2003-09-02 |
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|
US7128804B2
(en)
*
|
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2006-10-31 |
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|
WO2002067275A1
(en)
*
|
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|
US6830622B2
(en)
*
|
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2004-12-14 |
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|
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(en)
|
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2003-07-11 |
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|
US6811651B2
(en)
*
|
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2004-11-02 |
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|
US6527911B1
(en)
*
|
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2003-03-04 |
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|
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(ko)
*
|
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2004-05-17 |
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|
US20030029563A1
(en)
*
|
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|
US6849306B2
(en)
*
|
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2005-02-01 |
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Plasma treatment method at atmospheric pressure
|
EP1296384B1
(en)
|
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2008-09-03 |
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|
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(ko)
|
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2004-07-15 |
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|
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(en)
|
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|
US6776873B1
(en)
*
|
2002-02-14 |
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Jennifer Y Sun |
Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers
|
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(en)
|
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2005-10-26 |
Isle Coat Ltd |
Process and device for forming ceramic coatings on metals and alloys, and coatings produced by this process
|
US7311797B2
(en)
|
2002-06-27 |
2007-12-25 |
Lam Research Corporation |
Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor
|
US6852433B2
(en)
*
|
2002-07-19 |
2005-02-08 |
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|
KR100460143B1
(ko)
*
|
2002-08-02 |
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삼성전자주식회사 |
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|
JP3776856B2
(ja)
*
|
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株式会社日立ハイテクノロジーズ |
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|
US6837966B2
(en)
|
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|
US7204912B2
(en)
*
|
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2007-04-17 |
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|
US7166200B2
(en)
*
|
2002-09-30 |
2007-01-23 |
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|
US7137353B2
(en)
|
2002-09-30 |
2006-11-21 |
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|
US7147749B2
(en)
|
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2006-12-12 |
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|
US7166166B2
(en)
|
2002-09-30 |
2007-01-23 |
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|
US6798519B2
(en)
*
|
2002-09-30 |
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|
US20040060779A1
(en)
|
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2004-04-01 |
Charles Kreger |
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|
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(en)
|
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2004-11-01 |
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|
US6806949B2
(en)
*
|
2002-12-31 |
2004-10-19 |
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Monitoring material buildup on system components by optical emission
|
US6894769B2
(en)
*
|
2002-12-31 |
2005-05-17 |
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|
JP2004241203A
(ja)
*
|
2003-02-04 |
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プラズマ処理室壁処理方法
|
CN100418187C
(zh)
*
|
2003-02-07 |
2008-09-10 |
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|
US7029536B2
(en)
|
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|
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(ko)
|
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|
WO2004095532A2
(en)
|
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|
JP4238882B2
(ja)
|
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|