US20180308661A1 - Plasma reactor with electrode filaments - Google Patents
Plasma reactor with electrode filaments Download PDFInfo
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- US20180308661A1 US20180308661A1 US15/630,748 US201715630748A US2018308661A1 US 20180308661 A1 US20180308661 A1 US 20180308661A1 US 201715630748 A US201715630748 A US 201715630748A US 2018308661 A1 US2018308661 A1 US 2018308661A1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H01J2237/334—Etching
Definitions
- the present disclosure relates to a plasma reactor, e.g. for depositing a film on, etching, or treating a workpiece such as a semiconductor wafer.
- Plasma is typically generated using a capacitively-coupled plasma (CCP) source or an inductively-coupled plasma (ICP) source.
- CCP capacitively-coupled plasma
- ICP inductively-coupled plasma
- a basic CCP source contains two metal electrodes separated by a small distance in a gaseous environment similar to a parallel plate capacitor.
- One of the two metal electrodes are driven by a radio frequency (RF) power supply at a fixed frequency while the other electrode is connected to an RF ground, generating an RF electric field between the two electrodes.
- the generated electric field ionizes the gas atoms, releasing electrons.
- the electrons in the gas are accelerated by the RF electric field and ionizes the gas directly or indirectly by collisions, producing plasma.
- RF radio frequency
- a basic ICP source typically contains a conductor in a spiral or a coil shape. When an RF electric current is flowed through the conductor, RF magnetic field is formed around the conductor. The RF magnetic field accompanies an RF electric field, which ionizes the gas atoms and produces plasma.
- Plasmas of various process gasses are widely used in fabrication of integrated circuits. Plasmas can be used, for example, in thin film deposition, etching, and surface treatment.
- Atomic layer deposition is a thin film deposition technique based on the sequential use of a gas phase chemical process. Some ALD processes use plasmas to provide necessary activation energy for chemical reactions. Plasma-enhanced ALD processes can be performed at a lower temperature than non-plasma-enhanced (e.g., ‘thermal’) ALD processes.
- a plasma reactor in one aspect, includes a chamber body having an interior space that provides a plasma chamber and having a ceiling, a gas distributor to deliver a processing gas to the plasma chamber, a pump coupled to the plasma chamber to evacuate the chamber, a workpiece support to hold a workpiece facing the ceiling, an intra-chamber electrode assembly that includes an insulating frame and a filament extending laterally through the plasma chamber between the ceiling and the workpiece support, the filament including a conductor at least partially surrounded by an insulating shell that extends from the insulating frame, and a first RF power source to supply a first RF power to the conductor of the intra-chamber electrode assembly.
- Implementations may include one or more of the following features.
- the insulating shell may be a cylindrical shell that surrounds and extends along an entirety of the conductor within the plasma chamber.
- the insulating shell may be formed from silicon, or an oxide, nitride or carbide material, or a combination thereof.
- the insulating shell may be formed from silica, sapphire or silicon carbide.
- the insulating shell may be a coating on the conductor.
- the cylindrical shell may form a channel and the conductor may be suspended in and extends through the channel, or the conductor may have a hollow channel.
- a fluid supply may be configured to circulate a fluid through the channel.
- the fluid may be a non-oxidizing gas.
- a heat exchanger may be configured to remove heat from or supply heat to the fluid.
- the intra-chamber electrode assembly may have a plurality of coplanar filaments extending laterally through the plasma chamber between the ceiling and the workpiece support.
- the plurality of coplanar filaments may be uniformly spaced apart.
- a surface-to-surface spacing between the coplanar filaments and the workpiece support surface may be in the range of 2 mm to 25 mm.
- the plurality of coplanar filaments may include linear filaments.
- the plurality of coplanar filaments may extend in parallel through the plasma chamber.
- the plurality of coplanar filaments may be uniformly spaced apart.
- the shell may be fused to the insulating frame.
- the shell and the insulating frame may be a same material composition.
- the insulating frame may be formed from silica, or a ceramic material.
- a plasma reactor in another aspect, includes a chamber body having an interior space that provides a plasma chamber and having a ceiling and an insulating support to hold a top electrode, a gas distributor to deliver a processing gas to the plasma chamber, a pump coupled to the plasma chamber to evacuate the chamber, a workpiece support to hold a workpiece facing the top electrode, an intra-chamber electrode assembly comprising a filament extending laterally through the plasma chamber between the top electrode and the workpiece support, the filament including a conductor at least partially surrounded by an insulating shell that extends from the insulating frame, and a first RF power source to supply a first RF power to the conductor of the intra-chamber electrode assembly.
- Implementations may include one or more of the following features.
- the top electrode may be formed from silicon, carbon, or a combination thereof.
- the insulating frame may be an oxide, nitride, or a combination thereof.
- the insulating frame may be formed from silicon oxide, aluminum oxide, or silicon nitride.
- a plasma reactor in another aspect, includes a chamber body having an interior space that provides a plasma chamber and has a ceiling, a gas distributor to deliver a processing gas to the plasma chamber, a pump coupled to the plasma chamber to evacuate the chamber, a workpiece support to hold a workpiece, an intra-chamber electrode assembly that includes an insulating frame and a filament, the filament including a first portion extending downwardly from the ceiling and a second portion extending laterally through the plasma chamber between the ceiling and the workpiece support, the filament including a conductor at least partially surrounded by an insulating shell, and, a first RF power source to supply a first RF power to the conductor of the intra-chamber electrode assembly.
- Implementations may include one or more of the following features.
- the intra-chamber electrode assembly may include a plurality of filaments.
- Each filament may include a first portion extending downwardly from the ceiling and a second portion extending laterally through the plasma chamber extending laterally through the plasma chamber between the ceiling and the workpiece support.
- the second portions of the plurality of filaments may be coplanar.
- the second portions of the plurality of filaments may be uniformly spaced apart.
- the second portions of the plurality of filaments may be linear.
- the support may include a downwardly projecting side wall that surrounds a volume between the ceiling and the second portion of the filament.
- the side wall may be formed from silicon oxide or a ceramic material.
- the ceiling may include an insulating frame, and the filaments may extend out of the insulating frame.
- the shell may be fused to the frame.
- the shell and the support may have a same material composition.
- the insulating frame may be formed from silica, or a ceramic material.
- a plasma reactor in another aspect, includes a chamber body having an interior space that provides a plasma chamber and having a ceiling, a gas distributor to deliver a processing gas to the plasma chamber, a pump coupled to the plasma chamber to evacuate the chamber, a workpiece support to hold a workpiece, and an intra-chamber electrode assembly.
- the intra-chamber electrode assembly includes an insulating frame, a first plurality of coplanar filaments that extend laterally through the plasma chamber between the ceiling and the workpiece support along a first direction, and a second plurality of coplanar filaments that extend in parallel through the plasma chamber along a second direction perpendicular to the first direction.
- Each filament of the first and second plurality of filaments includes a conductor at least partially surrounded by an insulating shell.
- a first RF power source supplies a first RF power to the conductor of the intra-chamber electrode assembly.
- Plasma uniformity may be improved.
- Plasma process repeatability may be improved.
- Metal contamination may be reduced.
- Particle generation may be reduced.
- Plasma charging damage may be reduced.
- Uniformity of plasma may be maintained over different process operating conditions.
- Plasma power coupling efficiency may be improved.
- FIG. 1 is a schematic side view diagram of an example of a plasma reactor.
- FIG. 2 is a schematic side view diagram of another example of a plasma reactor.
- FIG. 3 is a perspective view of an example of an intra-chamber electrode assembly according to FIG. 2 .
- FIGS. 4A-4C are schematic cross-sectional perspective view diagrams of various examples of a filament of an intra-chamber electrode assembly.
- FIG. 5A is a schematic top view diagram of a portion of an intra-chamber electrode assembly.
- FIGS. 5B-C are cross-sectional schematic side view diagrams of an intra-chamber electrode assembly with different plasma region states.
- FIGS. 6A-C are schematic top view diagrams of various examples of intra-chamber electrode assembly configurations.
- Plasma uniformity in a conventional CCP source is typically determined by electrode(s) size and inter-electrode distance, as well as by gas pressure, gas composition, and applied RF power. At higher radio frequencies, additional effects may become significant or even dominate non-uniformities due to the presence of standing waves or skin effects. Such additional effects becomes more pronounced at higher frequencies and plasma densities.
- Plasma uniformity in a conventional ICP source is typically determined by the configuration of ICP coil(s) including its size, geometry, distance to workpiece, and associated RF window location, as well as by gas pressure, gas composition, and power. In case of multiple coils or coil segments, the current or power distribution and their relative phase, if driven at same frequency, might also be a significant factor. Power deposition tends to occur within several centimeters under or adjacent to ICP coils due to skin effect, and such localized power deposition typically leads to process non-uniformities that reflect the coil geometries. Such plasma non-uniformity causes a potential difference across a workpiece, which can also lead to plasma charging damage (e.g., transistor gate dielectric rupture).
- plasma charging damage e.g., transistor gate dielectric rupture
- a large diffusion distance is typically needed for improved uniformity of ICP source.
- a conventional ICP source with a thick RF window is typically inefficient at high gas pressures due to low power coupling, which leads to high drive current resulting in high resistive power losses.
- an intra-chamber electrode assembly does not need to have an RF window, but only a cylindrical shell. This can provide better power coupling and better efficiency.
- the moving workpiece support may be DC grounded through, for example, a rotary mercury coupler, brushes, or slip rings.
- the moving workpiece support may not be adequately grounded at radio frequencies.
- the RF ground path should have substantially lower impedance than the plasma for it to be an adequate RF ground. The lack of an adequate RF ground path may make it difficult to control ion energy at the workpiece and reduce the repeatability of the process.
- a plasma source with the following properties is thus desired: it can efficiently produce a uniform plasma with the desired properties (plasma density, electron temperature, ion energy, dissociation, etc.) over the workpiece size; it is tunable for uniformity over the operating window (e.g. pressure, power, gas composition); it has stable and repeatable electrical performance even with a moving workpiece; and it does not generate excessive metal contaminants or particles.
- An intra-chamber electrode assembly might be better able to provide one or more of these properties.
- FIG. 1 is a schematic side view diagram of an example of a plasma reactor.
- a plasma reactor 100 has a chamber body 102 enclosing an interior space 104 for use as a plasma chamber.
- the interior space 104 can be cylindrical, e.g., for processing of circular semiconductor wafers.
- the chamber body 102 has a support 106 located near the ceiling of the plasma reactor 100 , which supports a top electrode 108 .
- the top electrode can be suspended within the interior space 104 and spaced from the ceiling, abut the ceiling, or form a portion of the ceiling. Some portions of the side walls of the chamber body 102 can be grounded independent of the top electrode 108 .
- a gas distributor 110 is located near the ceiling of the plasma reactor 100 .
- the gas distributor 110 is integrated with the top electrode 108 as a single component.
- the gas distributor 110 is connected to a gas supply 112 .
- the gas supply 112 delivers one or more process gases to the gas distributor 110 , the composition of which can depend on the process to be performed, e.g., deposition or etching.
- a vacuum pump 113 is coupled to the interior space 104 to evacuate the plasma reactor. For some processes, the chamber is operated in the Torr range, and the gas distributor 110 supplies argon, nitrogen, oxygen and/or other gases.
- a workpiece support pedestal 114 for supporting a workpiece 115 is positioned in the plasma reactor 100 .
- the workpiece support pedestal 114 has a workpiece support surface 114 a facing the top electrode 108 .
- the workpiece support pedestal 114 includes a workpiece support electrode 116 inside the workpiece support pedestal 114 .
- the workpiece support electrode 116 may be grounded or connected to an impedance or circuit which is grounded.
- an RF bias power generator 142 is coupled through an impedance match 144 to the workpiece support electrode 116 .
- the workpiece support electrode 116 may additionally include an electrostatic chuck, and a workpiece bias voltage supply 118 may be connected to the workpiece support electrode 116 .
- the RF bias power generator 142 may be used to generate plasma, control electrode voltage or electrode sheath voltage, or to control ion energy of the plasma.
- the pedestal 114 can have internal passages 119 for heating or cooling the workpiece 115 .
- an embedded resistive heater can be provided inside the pedestal, e.g., inside the internal passages 119 .
- the workpiece support pedestal 114 is heated through radiant and/or convective heating from a heating element located within a bottom interior space 133 , and/or by a resistive heater on or embedded in the pedestal 114 .
- An intra-chamber electrode assembly 120 is positioned in the interior space 104 between the top electrode 108 and the workpiece support pedestal 114 .
- This electrode assembly 120 includes one or more filaments 310 that extend laterally in the chamber over the support surface 114 a of the pedestal 114 . At least a portion of the filaments of the electrode assembly 120 over the pedestal 114 extends parallel to the support surface 114 a.
- a top gap 130 is formed between the top electrode 108 and the intra-chamber electrode assembly 120 .
- a bottom gap 132 is formed between the workpiece support pedestal 114 and the intra-chamber electrode assembly 120 .
- the electrode assembly 120 is driven by an RF power source 122 .
- the RF power source 122 can apply power to the one or more filaments of the electrode assembly 120 at frequencies of 1 MHz to over 300 MHz.
- the RF power source 120 provides a total RF power 100 W to more than 2 kW at a frequency of 60 MHz.
- the bottom gap 132 it may be desirable to select the bottom gap 132 to cause plasma generated radicals, ions or electrons to interact with the workpiece surface.
- the selection of gap is application-dependent and operating regime dependent. For some applications wherein it is desired to deliver a radical flux (but very low ion/electron flux) to the workpiece surface, operation at larger gap and/or higher pressure may be selected. For other applications wherein it is desired to deliver a radical flux and substantial plasma ion/electron flux) to the workpiece surface, operation at smaller gap and/or lower pressure may be selected. For example, in some low-temperature plasma-enhanced ALD processes, free radicals of process gases are necessary for the deposition or treatment of an ALD film.
- a free radical is an atom or a molecule, has an unpaired valence electron.
- a free radical is typically highly chemically reactive towards other substances. The reaction of free radicals with other chemical species often plays an important role in film deposition. However, free radicals are typically short-lived due to their high chemical reactivity, and therefore cannot be transported very far within their lifetime. Placing the source of free radicals, namely the intra-chamber electrode assembly 120 acting as a plasma source, close to the surface of the workpiece 115 can increase the supply of free radicals to the surface, improving the deposition process.
- the lifetime of a free radical typically depends on the pressure of the surrounding environment. Therefore, a height of the bottom gap 132 that provides satisfactory free radical concentration can change depending on the expected chamber pressure during operation. In some implementations, if the chamber is to be operated at a pressure in the range of 1-10 Torr, the bottom gap 132 is less than 1 cm.
- the bottom gap 132 is less than 5 cm—for example 2-25 mm, e.g., 5 mm.
- Lower operating pressures may operate at larger gaps due to lower volume recombination rate with respect to distance.
- lower operating pressure is typically used (less than 100 mTorr) and the gap may be increased.
- the plasma generated by the electrode assembly 120 can have significant non-uniformities between the filaments, which may be detrimental to processing uniformity of the workpiece.
- the effect of the plasma spatial non-uniformities on the process can be mitigated by a time-averaging effect, i.e., the cumulative plasma dose received by any given region of the workpiece after a single pass through the plasma is substantially similar.
- the top gap may be selected large enough for plasma to develop between intra-chamber electrode assembly and top electrode (or top of chamber). In some implementations, if the chamber is to be operated at a pressure in the range of 1-10 Torr, the top gap 130 may be between 0.5-2 cm, e.g., 1.25 cm.
- the top electrode 108 can be configured in various ways. In some implementations, the top electrode is connected to an RF ground 140 . In some implementations, the top electrode is electrically isolated (‘floating’). In some implementations, the top electrode 108 is biased to a bias voltage. The bias voltage can be used to control characteristics of the generated plasma, including the ion energy. In some implementations, the top electrode 108 is driven with an RF signal. For example, driving the top electrode 108 with respect to the workpiece support electrode 116 that has been grounded can increase the plasma potential at the workpiece 115 . The increased plasma potential can cause an increase in ion energy to a desired value.
- the top electrode 108 can be formed of different process-compatible materials. Various criteria for process-computability include a material's resistance to etching by the process gasses and resistance to sputtering from ion bombardment. Furthermore, in cases where a material does get etched, a process-compatible material preferably forms a volatile, or gaseous, compound which can be evacuated by the vacuum pump 113 , and not form particles that can contaminate the workpiece 115 . Accordingly, in some implementations, the top electrode is made of silicon. In some implementations, the top electrode is made of silicon carbide. In some implementations, the top electrode is made of carbon-based material.
- the top electrode 108 may be omitted.
- RF ground paths may be provided by the workpiece support electrode or by a subset of coplanar filaments of the electrode assembly 120 or by a chamber wall or other ground-referenced surface in communication with plasma.
- a fluid supply 146 circulates a fluid through the intra-chamber electrode assembly 120 .
- a heat exchanger 148 is coupled to the fluid supply 146 to remove or supply heat to the fluid.
- the plasma reactor 100 could provide an ALD apparatus, an etching apparatus, a plasma treatment apparatus, a plasma-enhanced chemical vapor deposition apparatus, a plasma doping apparatus, or a plasma surface cleaning apparatus.
- FIG. 2 is a schematic diagram of another example of a plasma reactor 200 .
- the intra-chamber electrode assembly 120 is curved to be supported by the support 106 , and the fluid supply 146 can be coupled to the intra-chamber electrode assembly 120 through the support 106 .
- the filaments of the electrode assembly can emerge from and be supported by the side walls of the chamber body 102 .
- FIG. 3 is a perspective view of an example of an intra-chamber electrode assembly according to FIG. 2 . It shows the support 106 , top electrode 108 , the top gap 130 , and the intra-chamber electrode assembly 120 .
- the intra-chamber electrode assembly 120 includes one or more filaments 310 that extend laterally through the plasma chamber.
- the filaments include a central portion 312 that extends over the pedestal 114 (See FIG. 2 ) and end portions 314 that are curved upward to be supported from the support 106 . This configuration can provide for a compact installation and accessibility of the filaments from the top of the plasma reactor 100 .
- FIGS. 4A-C are schematic diagrams of various examples of a filament of an intra-chamber electrode assembly.
- a filament 400 of the intra-chamber electrode assembly 120 is shown.
- the filament 400 includes a conductor 410 and a cylindrical shell 420 that surrounds and extends along the conductor 410 .
- a channel 430 is formed by the gap between the conductor 410 and the cylindrical shell 420 .
- the cylindrical shell 420 is formed of a non-metallic material that is compatible with the process.
- the cylindrical shell is semiconductive.
- the cylindrical shell is insulative.
- the conductor 410 can be formed of various materials.
- the conductor 410 is a solid wire, e.g., a single solid wire with a diameter of 0.063′′.
- the conductor 410 can be provided by multiple stranded wires.
- the conductor contains 3 parallel 0.032′′ stranded wires. Multiple stranded wires can reduce RF power losses through skin effect. Litz wire can further reduce the skin effect.
- the conductor 410 is made of copper or an alloy of copper. In some implementations, the conductor is made of aluminum.
- Undesired material sputtering or etching can lead to process contamination or particle formation. Whether the intra chamber electrode assembly 120 is used as a CCP or an ICP source, undesired sputtering or etching can occur. The undesired sputtering or etching may be caused by excessive ion energy at the electrode surface. When operating as a CCP source, an oscillating electric field around the cylindrical shell is necessary to drive the plasma discharge. This oscillation leads to sputtering or etching of materials, as all known materials have a sputtering energy threshold that is lower than the corresponding minimum operating voltage of a CCP source.
- the cylindrical shell 420 is formed of a process-compatible material such as silicon, e.g., a high resistivity silicon, an oxide material, a nitride material, a carbide material, a ceramic material, or a combination thereof.
- oxide materials include silicon dioxide (e.g., silica, quartz) and aluminum oxide (e.g., sapphire).
- carbide materials include silicon carbide.
- nitride materials include silicon nitride. Ceramic materials or sapphire may be desirable for some chemical environments including fluorine-containing environments or fluorocarbon containing environments. In chemical environments containing ammonia, dichlorosilane, nitrogen, and oxygen, use of silicon, silicon carbide, or quartz may be desirable.
- the cylindrical shell 420 has a thickness of 0.1 mm to 3 mm, e.g., 1 mm.
- the shell 420 can have an inner diameter of 2-4 mm, e.g., 2 mm.
- a fluid is provided in the channel 430 .
- the fluid is a non-oxidizing gas to purge oxygen to mitigate oxidization of the conductor 410 .
- non-oxidizing gases are nitrogen and argon.
- the non-oxidizing gas is continuously flowed through the channel 430 , e.g., by the fluid supply 146 , to remove residual oxygen or water vapor.
- the heating of conductor 410 can make the conductor more susceptible to oxidization.
- the fluid can provide cooling to the conductor 410 , which may heat up from supplied RF power.
- the fluid is circulated through the channel 430 , e.g., by the fluid supply 146 , to provide forced convection temperature control, e.g., cooling or heating.
- the fluid may be at or above atmospheric pressure to prevent breakdown of the fluid. This can prevent unwanted plasma formation in tube.
- the pressure in the channel 430 can be at least 100 Torr.
- the conductor 410 has a coating 420 .
- the coating 420 is an oxide of the material forming the conductor (e.g., aluminum oxide on an aluminum conductor).
- the coating 420 is silicon dioxide.
- the coating 420 is formed in-situ in the plasma reactor 100 by, for example, a reaction of silane, hydrogen, and oxygen to form a silicon dioxide coating. In-situ coating may be beneficial as it can be replenished when etched or sputtered.
- the coating may be 0.1-10 microns thick.
- the conductor 410 is hollow, and a hollow channel 440 is formed inside the conductor 410 .
- the hollow channel 440 can carry a fluid as described in FIG. 4A .
- the conductor can be hollow tube with an outer diameter of about 1-4 mm, e.g., 2 mm, and a wall thickness of 0.25-1 mm, e.g., 0.5 mm.
- a coating of the process-compatible material can cover the conductor 410 to provide the cylindrical shell 420 .
- the coating 420 is an oxide of the material forming the conductor (e.g., aluminum oxide on an aluminum conductor).
- the hollow conductor 410 has an outer diameter of 2 mm, with a wall thickness of 0.5 mm.
- the filaments 400 are supported by and extend from a frame.
- the frame is formed of a process-compatible material such as an oxide material, a nitride material, a carbide material, a ceramic material, or a combination thereof.
- oxide materials include silicon dioxide (e.g., silica, quartz) and aluminum oxide (e.g., sapphire).
- carbide materials include silicon carbide.
- the frame and the shell of the filament 310 are formed of the same material, e.g., quartz.
- the shell of the filament 400 can be fused to the frame. This can create a fluid-tight seal to prevent process gas from reaching the conductor, and thus can improve lifetime of the reactor, and reduce the likelihood of contamination.
- the filaments 400 extend horizontally from the frame.
- the frame provides a portion of the ceiling and the filaments 400 extend downwardly from the frame.
- the frame can be provided by the support 106 .
- the frame is a separate body, e.g., a body mounted to the ceiling or side walls 102 .
- the frame is provided by the side walls of the chamber.
- the chamber walls can be conductive, but the insulating shell can isolate the conductor from the chamber wall.
- the frame can be a body 105 that extends downwardly to surround the top gap 130 .
- the support 106 can include a downwardly projecting wall 107 that surrounds the top gap 130 .
- the body 105 or wall 107 can be integrally formed or fused to the support 106 to provide a fluid-tight seal.
- FIG. 5A is a schematic diagram of a portion of an intra-chamber electrode assembly.
- An intra-chamber electrode assembly 500 includes multiple filaments 400 attached at a support 502 .
- the electrode assembly 500 can provide the electrode assembly 120
- the filaments 400 can provide the filaments, e.g., filaments 310 , of the electrode assembly 120 .
- the filaments extend in parallel to each other.
- the filaments 400 are separated from one another by a filament spacing 510 .
- the filament spacing 510 can be the surface-to-surface distance; for parallel filaments the spacing can be measured perpendicular to the longitudinal axis of the filaments.
- the spacing 510 can impact plasma uniformity. If the spacing is too large, then the filaments can create shadowing and non-uniformity. On the other hand, if the spacing is too small, the plasma cannot migrate between the top gap 130 and the bottom gap 132 , and non-uniformity will be increased or ion density or free radical density will be reduced. In some implementations, the filament spacing 510 is uniform across the assembly 500 .
- the filament spacing 510 can be 3 to 20 mm, e.g., 8 mm. At high pressure, e.g., 2-10 torr in N 2 , the filament spacing may be 20 mm to 3 mm. A compromise over the pressure range may be 5-10 mm. At lower pressure and greater distance to workpiece larger spacing may be effectively used.
- FIGS. 5B-C are cross-sectional schematic diagrams of an intra-chamber electrode assembly with different plasma region states.
- a plasma region 512 surrounds the filaments 400 .
- the plasma region 512 has an upper plasma region 514 and a lower plasma region 516 .
- the upper plasma region 514 is located at the top gap 130 and the lower plasma region 516 is located at the bottom gap 132 .
- the upper plasma region 514 and the lower plasma region 516 is connected through the gaps between the filaments 400 , forming a continuous plasma region 512 .
- This continuity of the plasma regions 512 is desirable, as the regions 514 and 516 ‘communicate’ with each other through exchange of plasma.
- a monopolar drive all the filaments connected to same power source
- a grounded top electrode as the main ground path
- the upper plasma region 514 and the lower plasma region 516 is not connected to each other.
- This ‘pinching’ of the plasma region 512 is not desirable for plasma stability.
- the shape of the plasma region 512 can be modified by various factors to remove the plasma region discontinuity or improve plasma uniformity.
- the regions 512 , 514 , and 516 can have a wide range of plasma densities, and are not necessarily uniform. Furthermore, the discontinuities between the upper plasma region 514 and the lower plasma region 516 shown in FIG. 5C represents a substantially low plasma density relative to the two regions, and not necessarily a complete lack of plasma in the gaps.
- the top gap 130 is a factor affecting the shape of the plasma region. Depending on the pressure, when the top electrode 108 is grounded, reducing the top gap 130 typically leads to a reduction of plasma density in the upper plasma region 514 . Specific values for the top gap 130 can be determined based on computer modelling of the plasma chamber. For example, the top gap 130 can be 3 mm to 8 mm, e.g., 4.5 mm.
- the bottom gap 132 is a factor affecting the shape of the plasma region. Depending on the pressure, when the workpiece support electrode 116 is grounded, reducing the bottom gap 132 typically leads to a reduction of plasma density in the lower plasma region 516 . Specific values for the bottom gap 132 can be determined based on computer modelling of the plasma chamber. For example, the bottom gap 132 can be 3 mm to 9 mm, e.g., 4.5 mm.
- the phase of the RF signal driving adjacent filaments 400 is a factor affecting the shape of the plasma region.
- the phase difference of the two RF signals driving the adjacent filaments is set to 0 degrees (‘monopolar’, or ‘singled-ended’)
- the plasma region is pushed out from the gaps between the filaments 400 , leading to discontinuity or non-uniformity.
- the phase difference of the RF signals driving the adjacent filaments is set to 180 degrees (‘differential’)
- the plasma region is more strongly confined between the filaments 400 .
- Any phase difference between 0 and 360 degrees can be used to affect the shape of the plasma region 512 .
- the intra-chamber electrode assembly 500 can include a first group and a second group of filaments 400 .
- the first group and the second group can be spatially arranged such that the filaments alternate between the first group and the second group.
- the first group can include the filament 402
- the second group can include the filaments 400 and 404 .
- the first group can be driven by a first terminal 522 a of an RF power supply 522 and the second group can be driven by a second terminal 522 b of the RF power supply 522 .
- the RF power supply 522 can be configured to provide a first RF signal at the terminal 522 a and a second RF signal at terminal 522 b.
- the first and second RF signals can have a same frequency and a stable phase relationship to each other.
- the phase relationship can include 0 degrees and 180 degrees.
- the phase relationship between the first and the second RF signals provided by the RF power supply 522 can be tunable between 0 and 360.
- the RF supply 522 can include two individual RF power supplies that are phase-locked to each other.
- FIGS. 6A-C are schematic diagrams of various examples of intra-chamber electrode assembly configurations.
- an intra-chamber electrode assembly 600 includes a first interdigitated electrode subassembly 620 and a second interdigitated electrode subassembly 630 .
- the subassembly 620 and 630 each has multiple parallel filaments 400 that are connected by a bus 650 at one end.
- the bus 650 connecting the filaments 400 is located outside of the interior space 104 .
- the bus 650 connecting the filaments 400 is located in the interior space 104 .
- the first interdigitated electrode subassembly 620 and a second interdigitated electrode subassembly 630 are oriented parallel to each other such that the filaments of the subassemblies 620 and 630 are parallel to each other.
- an intra-chamber electrode assembly 602 includes a first electrode subassembly 622 and a second electrode subassembly 632 configured such that the filaments of the subassemblies 622 and 632 extend at a non-zero angle, e.g., perpendicular, to each other.
- the intra-chamber electrode assembly 602 can be driven with RF signals in various ways.
- the subassembly 622 and subassembly 632 are driven with a same RF signal with respect to an RF ground.
- the subassembly 622 and subassembly 632 are driven with a differential RF signal.
- the subassembly 622 is driven with an RF signal, and subassembly 632 is connected to an RF ground.
- an intra-chamber electrode assembly 604 includes a first electrode subassembly 624 and a second electrode subassembly 634 that are overlaid.
- the first electrode subassembly 624 and the second electrode subassembly 634 each has multiple parallel filaments 400 that are connected by buses 660 and 662 in both ends.
- the first electrode subassembly 624 and the second electrode subassembly 634 are configured such that the filaments of the subassemblies 624 and 634 are parallel to each other, with the filaments of the subassemblies 624 , 635 arranged in alternating pattern.
- the intra-chamber electrode assembly 604 can be driven with RF signals in various ways.
- the subassembly 624 and subassembly 634 are driven with a same RF signal with respect to an RF ground.
- the subassembly 624 and subassembly 634 are driven with a differential RF signal.
- the subassembly 624 is driven with an RF signal, and the subassembly 634 is connected to an RF ground.
- the intra-chamber electrode assembly 604 is driven in a single-ended manner with an RF signal using a center-feed 640 .
- the center-feed 640 is connected to an X-shaped current splitter 642 at the center.
- the four corners of the subassemblies 624 and 634 are connected to the X-shaped current splitter 642 using vertical feed structures.
Abstract
Description
- The present application claims priority to U.S. Provisional Patent Application Ser. No. 62/489,344, filed Apr. 24, 2017, the entirety of which is incorporated by reference.
- The present disclosure relates to a plasma reactor, e.g. for depositing a film on, etching, or treating a workpiece such as a semiconductor wafer.
- Plasma is typically generated using a capacitively-coupled plasma (CCP) source or an inductively-coupled plasma (ICP) source. A basic CCP source contains two metal electrodes separated by a small distance in a gaseous environment similar to a parallel plate capacitor. One of the two metal electrodes are driven by a radio frequency (RF) power supply at a fixed frequency while the other electrode is connected to an RF ground, generating an RF electric field between the two electrodes. The generated electric field ionizes the gas atoms, releasing electrons. The electrons in the gas are accelerated by the RF electric field and ionizes the gas directly or indirectly by collisions, producing plasma.
- A basic ICP source typically contains a conductor in a spiral or a coil shape. When an RF electric current is flowed through the conductor, RF magnetic field is formed around the conductor. The RF magnetic field accompanies an RF electric field, which ionizes the gas atoms and produces plasma.
- Plasmas of various process gasses are widely used in fabrication of integrated circuits. Plasmas can be used, for example, in thin film deposition, etching, and surface treatment.
- Atomic layer deposition (ALD) is a thin film deposition technique based on the sequential use of a gas phase chemical process. Some ALD processes use plasmas to provide necessary activation energy for chemical reactions. Plasma-enhanced ALD processes can be performed at a lower temperature than non-plasma-enhanced (e.g., ‘thermal’) ALD processes.
- In one aspect, a plasma reactor includes a chamber body having an interior space that provides a plasma chamber and having a ceiling, a gas distributor to deliver a processing gas to the plasma chamber, a pump coupled to the plasma chamber to evacuate the chamber, a workpiece support to hold a workpiece facing the ceiling, an intra-chamber electrode assembly that includes an insulating frame and a filament extending laterally through the plasma chamber between the ceiling and the workpiece support, the filament including a conductor at least partially surrounded by an insulating shell that extends from the insulating frame, and a first RF power source to supply a first RF power to the conductor of the intra-chamber electrode assembly.
- Implementations may include one or more of the following features.
- The insulating shell may be a cylindrical shell that surrounds and extends along an entirety of the conductor within the plasma chamber. The insulating shell may be formed from silicon, or an oxide, nitride or carbide material, or a combination thereof. The insulating shell may be formed from silica, sapphire or silicon carbide. The insulating shell may be a coating on the conductor. The cylindrical shell may form a channel and the conductor may be suspended in and extends through the channel, or the conductor may have a hollow channel. A fluid supply may be configured to circulate a fluid through the channel. The fluid may be a non-oxidizing gas. A heat exchanger may be configured to remove heat from or supply heat to the fluid.
- The intra-chamber electrode assembly may have a plurality of coplanar filaments extending laterally through the plasma chamber between the ceiling and the workpiece support. The plurality of coplanar filaments may be uniformly spaced apart. A surface-to-surface spacing between the coplanar filaments and the workpiece support surface may be in the range of 2 mm to 25 mm. The plurality of coplanar filaments may include linear filaments. The plurality of coplanar filaments may extend in parallel through the plasma chamber. The plurality of coplanar filaments may be uniformly spaced apart.
- The shell may be fused to the insulating frame. The shell and the insulating frame may be a same material composition. The insulating frame may be formed from silica, or a ceramic material.
- In another aspect, a plasma reactor includes a chamber body having an interior space that provides a plasma chamber and having a ceiling and an insulating support to hold a top electrode, a gas distributor to deliver a processing gas to the plasma chamber, a pump coupled to the plasma chamber to evacuate the chamber, a workpiece support to hold a workpiece facing the top electrode, an intra-chamber electrode assembly comprising a filament extending laterally through the plasma chamber between the top electrode and the workpiece support, the filament including a conductor at least partially surrounded by an insulating shell that extends from the insulating frame, and a first RF power source to supply a first RF power to the conductor of the intra-chamber electrode assembly.
- Implementations may include one or more of the following features.
- The top electrode may be formed from silicon, carbon, or a combination thereof. The insulating frame may be an oxide, nitride, or a combination thereof. The insulating frame may be formed from silicon oxide, aluminum oxide, or silicon nitride.
- In another aspect, a plasma reactor includes a chamber body having an interior space that provides a plasma chamber and has a ceiling, a gas distributor to deliver a processing gas to the plasma chamber, a pump coupled to the plasma chamber to evacuate the chamber, a workpiece support to hold a workpiece, an intra-chamber electrode assembly that includes an insulating frame and a filament, the filament including a first portion extending downwardly from the ceiling and a second portion extending laterally through the plasma chamber between the ceiling and the workpiece support, the filament including a conductor at least partially surrounded by an insulating shell, and, a first RF power source to supply a first RF power to the conductor of the intra-chamber electrode assembly.
- Implementations may include one or more of the following features.
- The intra-chamber electrode assembly may include a plurality of filaments. Each filament may include a first portion extending downwardly from the ceiling and a second portion extending laterally through the plasma chamber extending laterally through the plasma chamber between the ceiling and the workpiece support. The second portions of the plurality of filaments may be coplanar. The second portions of the plurality of filaments may be uniformly spaced apart. The second portions of the plurality of filaments may be linear.
- The support may include a downwardly projecting side wall that surrounds a volume between the ceiling and the second portion of the filament. The side wall may be formed from silicon oxide or a ceramic material. The ceiling may include an insulating frame, and the filaments may extend out of the insulating frame. The shell may be fused to the frame. The shell and the support may have a same material composition. The insulating frame may be formed from silica, or a ceramic material.
- In another aspect, a plasma reactor includes a chamber body having an interior space that provides a plasma chamber and having a ceiling, a gas distributor to deliver a processing gas to the plasma chamber, a pump coupled to the plasma chamber to evacuate the chamber, a workpiece support to hold a workpiece, and an intra-chamber electrode assembly. The intra-chamber electrode assembly includes an insulating frame, a first plurality of coplanar filaments that extend laterally through the plasma chamber between the ceiling and the workpiece support along a first direction, and a second plurality of coplanar filaments that extend in parallel through the plasma chamber along a second direction perpendicular to the first direction. Each filament of the first and second plurality of filaments includes a conductor at least partially surrounded by an insulating shell. A first RF power source supplies a first RF power to the conductor of the intra-chamber electrode assembly.
- Certain implementations may have one or more of the following advantages. Plasma uniformity may be improved. Plasma process repeatability may be improved. Metal contamination may be reduced. Particle generation may be reduced. Plasma charging damage may be reduced. Uniformity of plasma may be maintained over different process operating conditions. Plasma power coupling efficiency may be improved.
- The details of one or more embodiments of the invention are set forth in the accompanying drawings and the description below. Other features, objects, and advantages of the invention will be apparent from the description and drawings, and from the claims.
-
FIG. 1 is a schematic side view diagram of an example of a plasma reactor. -
FIG. 2 is a schematic side view diagram of another example of a plasma reactor. -
FIG. 3 is a perspective view of an example of an intra-chamber electrode assembly according toFIG. 2 . -
FIGS. 4A-4C are schematic cross-sectional perspective view diagrams of various examples of a filament of an intra-chamber electrode assembly. -
FIG. 5A is a schematic top view diagram of a portion of an intra-chamber electrode assembly. -
FIGS. 5B-C are cross-sectional schematic side view diagrams of an intra-chamber electrode assembly with different plasma region states. -
FIGS. 6A-C are schematic top view diagrams of various examples of intra-chamber electrode assembly configurations. - Like reference symbols in the various drawings indicate like elements.
- Plasma uniformity in a conventional CCP source is typically determined by electrode(s) size and inter-electrode distance, as well as by gas pressure, gas composition, and applied RF power. At higher radio frequencies, additional effects may become significant or even dominate non-uniformities due to the presence of standing waves or skin effects. Such additional effects becomes more pronounced at higher frequencies and plasma densities.
- Plasma uniformity in a conventional ICP source is typically determined by the configuration of ICP coil(s) including its size, geometry, distance to workpiece, and associated RF window location, as well as by gas pressure, gas composition, and power. In case of multiple coils or coil segments, the current or power distribution and their relative phase, if driven at same frequency, might also be a significant factor. Power deposition tends to occur within several centimeters under or adjacent to ICP coils due to skin effect, and such localized power deposition typically leads to process non-uniformities that reflect the coil geometries. Such plasma non-uniformity causes a potential difference across a workpiece, which can also lead to plasma charging damage (e.g., transistor gate dielectric rupture).
- A large diffusion distance is typically needed for improved uniformity of ICP source. However, a conventional ICP source with a thick RF window is typically inefficient at high gas pressures due to low power coupling, which leads to high drive current resulting in high resistive power losses. In contrast, an intra-chamber electrode assembly does not need to have an RF window, but only a cylindrical shell. This can provide better power coupling and better efficiency.
- In a plasma chamber with a moving workpiece support, the moving workpiece support may be DC grounded through, for example, a rotary mercury coupler, brushes, or slip rings. However, the moving workpiece support may not be adequately grounded at radio frequencies. The RF ground path should have substantially lower impedance than the plasma for it to be an adequate RF ground. The lack of an adequate RF ground path may make it difficult to control ion energy at the workpiece and reduce the repeatability of the process.
- A plasma source with the following properties is thus desired: it can efficiently produce a uniform plasma with the desired properties (plasma density, electron temperature, ion energy, dissociation, etc.) over the workpiece size; it is tunable for uniformity over the operating window (e.g. pressure, power, gas composition); it has stable and repeatable electrical performance even with a moving workpiece; and it does not generate excessive metal contaminants or particles. An intra-chamber electrode assembly might be better able to provide one or more of these properties.
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FIG. 1 is a schematic side view diagram of an example of a plasma reactor. Aplasma reactor 100 has achamber body 102 enclosing aninterior space 104 for use as a plasma chamber. Theinterior space 104 can be cylindrical, e.g., for processing of circular semiconductor wafers. Thechamber body 102 has asupport 106 located near the ceiling of theplasma reactor 100, which supports atop electrode 108. The top electrode can be suspended within theinterior space 104 and spaced from the ceiling, abut the ceiling, or form a portion of the ceiling. Some portions of the side walls of thechamber body 102 can be grounded independent of thetop electrode 108. - A
gas distributor 110 is located near the ceiling of theplasma reactor 100. In some implementations, thegas distributor 110 is integrated with thetop electrode 108 as a single component. Thegas distributor 110 is connected to agas supply 112. Thegas supply 112 delivers one or more process gases to thegas distributor 110, the composition of which can depend on the process to be performed, e.g., deposition or etching. Avacuum pump 113 is coupled to theinterior space 104 to evacuate the plasma reactor. For some processes, the chamber is operated in the Torr range, and thegas distributor 110 supplies argon, nitrogen, oxygen and/or other gases. - A
workpiece support pedestal 114 for supporting aworkpiece 115 is positioned in theplasma reactor 100. Theworkpiece support pedestal 114 has aworkpiece support surface 114 a facing thetop electrode 108. - In some implementations, the
workpiece support pedestal 114 includes aworkpiece support electrode 116 inside theworkpiece support pedestal 114. In some implementations, theworkpiece support electrode 116 may be grounded or connected to an impedance or circuit which is grounded. In some implementations, an RFbias power generator 142 is coupled through animpedance match 144 to theworkpiece support electrode 116. Theworkpiece support electrode 116 may additionally include an electrostatic chuck, and a workpiecebias voltage supply 118 may be connected to theworkpiece support electrode 116. The RF biaspower generator 142 may be used to generate plasma, control electrode voltage or electrode sheath voltage, or to control ion energy of the plasma. - Additionally, the
pedestal 114 can haveinternal passages 119 for heating or cooling theworkpiece 115. In some implementations, an embedded resistive heater can be provided inside the pedestal, e.g., inside theinternal passages 119. - In some implementations, the
workpiece support pedestal 114 is heated through radiant and/or convective heating from a heating element located within a bottom interior space 133, and/or by a resistive heater on or embedded in thepedestal 114. - An
intra-chamber electrode assembly 120 is positioned in theinterior space 104 between thetop electrode 108 and theworkpiece support pedestal 114. Thiselectrode assembly 120 includes one ormore filaments 310 that extend laterally in the chamber over thesupport surface 114 a of thepedestal 114. At least a portion of the filaments of theelectrode assembly 120 over thepedestal 114 extends parallel to thesupport surface 114 a. Atop gap 130 is formed between thetop electrode 108 and theintra-chamber electrode assembly 120. Abottom gap 132 is formed between theworkpiece support pedestal 114 and theintra-chamber electrode assembly 120. - The
electrode assembly 120 is driven by anRF power source 122. TheRF power source 122 can apply power to the one or more filaments of theelectrode assembly 120 at frequencies of 1 MHz to over 300 MHz. For some processes, theRF power source 120 provides a total RF power 100 W to more than 2 kW at a frequency of 60 MHz. - In some implementations, it may be desirable to select the
bottom gap 132 to cause plasma generated radicals, ions or electrons to interact with the workpiece surface. The selection of gap is application-dependent and operating regime dependent. For some applications wherein it is desired to deliver a radical flux (but very low ion/electron flux) to the workpiece surface, operation at larger gap and/or higher pressure may be selected. For other applications wherein it is desired to deliver a radical flux and substantial plasma ion/electron flux) to the workpiece surface, operation at smaller gap and/or lower pressure may be selected. For example, in some low-temperature plasma-enhanced ALD processes, free radicals of process gases are necessary for the deposition or treatment of an ALD film. A free radical is an atom or a molecule, has an unpaired valence electron. A free radical is typically highly chemically reactive towards other substances. The reaction of free radicals with other chemical species often plays an important role in film deposition. However, free radicals are typically short-lived due to their high chemical reactivity, and therefore cannot be transported very far within their lifetime. Placing the source of free radicals, namely theintra-chamber electrode assembly 120 acting as a plasma source, close to the surface of theworkpiece 115 can increase the supply of free radicals to the surface, improving the deposition process. - The lifetime of a free radical typically depends on the pressure of the surrounding environment. Therefore, a height of the
bottom gap 132 that provides satisfactory free radical concentration can change depending on the expected chamber pressure during operation. In some implementations, if the chamber is to be operated at a pressure in the range of 1-10 Torr, thebottom gap 132 is less than 1 cm. - In other low(er) temperature plasma-enhanced ALD processes, exposure to plasma ion flux (and accompanying electron flux) as well as radical flux may be necessary for deposition and treatment of an ALD film. In some implementations, if the chamber is to be operated at a pressure in the range of 1-10 Torr, the
bottom gap 132 is less than 5 cm—for example 2-25 mm, e.g., 5 mm. Lower operating pressures may operate at larger gaps due to lower volume recombination rate with respect to distance. In other applications, such as etching, lower operating pressure is typically used (less than 100 mTorr) and the gap may be increased. - In such applications where the
bottom gap 132 is small, the plasma generated by theelectrode assembly 120 can have significant non-uniformities between the filaments, which may be detrimental to processing uniformity of the workpiece. By moving the workpiece through the plasma having spatial non-uniformities, the effect of the plasma spatial non-uniformities on the process can be mitigated by a time-averaging effect, i.e., the cumulative plasma dose received by any given region of the workpiece after a single pass through the plasma is substantially similar. - The top gap may be selected large enough for plasma to develop between intra-chamber electrode assembly and top electrode (or top of chamber). In some implementations, if the chamber is to be operated at a pressure in the range of 1-10 Torr, the
top gap 130 may be between 0.5-2 cm, e.g., 1.25 cm. - The
top electrode 108 can be configured in various ways. In some implementations, the top electrode is connected to anRF ground 140. In some implementations, the top electrode is electrically isolated (‘floating’). In some implementations, thetop electrode 108 is biased to a bias voltage. The bias voltage can be used to control characteristics of the generated plasma, including the ion energy. In some implementations, thetop electrode 108 is driven with an RF signal. For example, driving thetop electrode 108 with respect to theworkpiece support electrode 116 that has been grounded can increase the plasma potential at theworkpiece 115. The increased plasma potential can cause an increase in ion energy to a desired value. - The
top electrode 108 can be formed of different process-compatible materials. Various criteria for process-computability include a material's resistance to etching by the process gasses and resistance to sputtering from ion bombardment. Furthermore, in cases where a material does get etched, a process-compatible material preferably forms a volatile, or gaseous, compound which can be evacuated by thevacuum pump 113, and not form particles that can contaminate theworkpiece 115. Accordingly, in some implementations, the top electrode is made of silicon. In some implementations, the top electrode is made of silicon carbide. In some implementations, the top electrode is made of carbon-based material. - In some implementations, the
top electrode 108 may be omitted. In such implementations, RF ground paths may be provided by the workpiece support electrode or by a subset of coplanar filaments of theelectrode assembly 120 or by a chamber wall or other ground-referenced surface in communication with plasma. - In some implementations, a
fluid supply 146 circulates a fluid through theintra-chamber electrode assembly 120. In some implementations, aheat exchanger 148 is coupled to thefluid supply 146 to remove or supply heat to the fluid. - Depending on chamber configuration and supplied processing gasses, the
plasma reactor 100 could provide an ALD apparatus, an etching apparatus, a plasma treatment apparatus, a plasma-enhanced chemical vapor deposition apparatus, a plasma doping apparatus, or a plasma surface cleaning apparatus. -
FIG. 2 is a schematic diagram of another example of aplasma reactor 200. In this example, which is the same asFIG. 1 except as described, theintra-chamber electrode assembly 120 is curved to be supported by thesupport 106, and thefluid supply 146 can be coupled to theintra-chamber electrode assembly 120 through thesupport 106. In contrast, in the example ofFIG. 1 , the filaments of the electrode assembly can emerge from and be supported by the side walls of thechamber body 102. -
FIG. 3 is a perspective view of an example of an intra-chamber electrode assembly according toFIG. 2 . It shows thesupport 106,top electrode 108, thetop gap 130, and theintra-chamber electrode assembly 120. Theintra-chamber electrode assembly 120 includes one ormore filaments 310 that extend laterally through the plasma chamber. The filaments include acentral portion 312 that extends over the pedestal 114 (SeeFIG. 2 ) and endportions 314 that are curved upward to be supported from thesupport 106. This configuration can provide for a compact installation and accessibility of the filaments from the top of theplasma reactor 100. -
FIGS. 4A-C are schematic diagrams of various examples of a filament of an intra-chamber electrode assembly. Referring toFIG. 4A , afilament 400 of theintra-chamber electrode assembly 120 is shown. Thefilament 400 includes aconductor 410 and acylindrical shell 420 that surrounds and extends along theconductor 410. Achannel 430 is formed by the gap between theconductor 410 and thecylindrical shell 420. Thecylindrical shell 420 is formed of a non-metallic material that is compatible with the process. In some implementations, the cylindrical shell is semiconductive. In some implementations, the cylindrical shell is insulative. - The
conductor 410 can be formed of various materials. In some implementations, theconductor 410 is a solid wire, e.g., a single solid wire with a diameter of 0.063″. Alternatively, theconductor 410 can be provided by multiple stranded wires. In some implementations, the conductor contains 3 parallel 0.032″ stranded wires. Multiple stranded wires can reduce RF power losses through skin effect. Litz wire can further reduce the skin effect. - A material with high electrical conductivity, e.g., above 107 Siemen/m, is used, which can reduce resistive power losses. In some implementations, the
conductor 410 is made of copper or an alloy of copper. In some implementations, the conductor is made of aluminum. - Undesired material sputtering or etching can lead to process contamination or particle formation. Whether the intra
chamber electrode assembly 120 is used as a CCP or an ICP source, undesired sputtering or etching can occur. The undesired sputtering or etching may be caused by excessive ion energy at the electrode surface. When operating as a CCP source, an oscillating electric field around the cylindrical shell is necessary to drive the plasma discharge. This oscillation leads to sputtering or etching of materials, as all known materials have a sputtering energy threshold that is lower than the corresponding minimum operating voltage of a CCP source. When operated as an ICP source, capacitive coupling of thefilament 400 to the plasma creates an oscillating electric field at nearby surfaces, which also causes sputtering of materials. The problems resulting from undesired material sputtering or etching may be mitigated by using a process-compatible material for the outer surface of thefilament 400 exposed to the interior space 104 (e.g., the cylindrical shell 420). - In some implementations, the
cylindrical shell 420 is formed of a process-compatible material such as silicon, e.g., a high resistivity silicon, an oxide material, a nitride material, a carbide material, a ceramic material, or a combination thereof. Examples of oxide materials include silicon dioxide (e.g., silica, quartz) and aluminum oxide (e.g., sapphire). Examples of carbide materials include silicon carbide. Examples of nitride materials include silicon nitride. Ceramic materials or sapphire may be desirable for some chemical environments including fluorine-containing environments or fluorocarbon containing environments. In chemical environments containing ammonia, dichlorosilane, nitrogen, and oxygen, use of silicon, silicon carbide, or quartz may be desirable. - In some implementations, the
cylindrical shell 420 has a thickness of 0.1 mm to 3 mm, e.g., 1 mm. Theshell 420 can have an inner diameter of 2-4 mm, e.g., 2 mm. - In some implementations, a fluid is provided in the
channel 430. In some implementations, the fluid is a non-oxidizing gas to purge oxygen to mitigate oxidization of theconductor 410. Examples of non-oxidizing gases are nitrogen and argon. In some implementations, the non-oxidizing gas is continuously flowed through thechannel 430, e.g., by thefluid supply 146, to remove residual oxygen or water vapor. - The heating of
conductor 410 can make the conductor more susceptible to oxidization. The fluid can provide cooling to theconductor 410, which may heat up from supplied RF power. In some implementations, the fluid is circulated through thechannel 430, e.g., by thefluid supply 146, to provide forced convection temperature control, e.g., cooling or heating. - In some implementations, the fluid may be at or above atmospheric pressure to prevent breakdown of the fluid. This can prevent unwanted plasma formation in tube. The pressure in the
channel 430 can be at least 100 Torr. - Referring to
FIG. 4B , in some implementations of thefilament 400, theconductor 410 has acoating 420. In some implementations, thecoating 420 is an oxide of the material forming the conductor (e.g., aluminum oxide on an aluminum conductor). In some implementations, thecoating 420 is silicon dioxide. In some implementations, thecoating 420 is formed in-situ in theplasma reactor 100 by, for example, a reaction of silane, hydrogen, and oxygen to form a silicon dioxide coating. In-situ coating may be beneficial as it can be replenished when etched or sputtered. The coating may be 0.1-10 microns thick. - Referring to
FIG. 4C , in some implementations of thefilament 400, theconductor 410 is hollow, and ahollow channel 440 is formed inside theconductor 410. In some implementations, thehollow channel 440 can carry a fluid as described inFIG. 4A . The conductor can be hollow tube with an outer diameter of about 1-4 mm, e.g., 2 mm, and a wall thickness of 0.25-1 mm, e.g., 0.5 mm. A coating of the process-compatible material can cover theconductor 410 to provide thecylindrical shell 420. In some implementations, thecoating 420 is an oxide of the material forming the conductor (e.g., aluminum oxide on an aluminum conductor). In some implementations, thehollow conductor 410 has an outer diameter of 2 mm, with a wall thickness of 0.5 mm. - Returning to
FIGS. 1 and 2 , thefilaments 400 are supported by and extend from a frame. The frame is formed of a process-compatible material such as an oxide material, a nitride material, a carbide material, a ceramic material, or a combination thereof. Examples of oxide materials include silicon dioxide (e.g., silica, quartz) and aluminum oxide (e.g., sapphire). Examples of carbide materials include silicon carbide. In some implementations, the frame and the shell of thefilament 310 are formed of the same material, e.g., quartz. - The shell of the
filament 400 can be fused to the frame. This can create a fluid-tight seal to prevent process gas from reaching the conductor, and thus can improve lifetime of the reactor, and reduce the likelihood of contamination. - In some implementations, e.g., as shown in
FIG. 1 , thefilaments 400 extend horizontally from the frame. In some implementations, e.g., as shown inFIG. 2 , the frame provides a portion of the ceiling and thefilaments 400 extend downwardly from the frame. - In some implementations, e.g., as shown in
FIGS. 2 and 3 , the frame can be provided by thesupport 106. In other implementations, the frame is a separate body, e.g., a body mounted to the ceiling orside walls 102. In some implementations, the frame is provided by the side walls of the chamber. The chamber walls can be conductive, but the insulating shell can isolate the conductor from the chamber wall. - As shown in
FIG. 1 , if thefilaments 400 project horizontally from the frame, then the frame can be abody 105 that extends downwardly to surround thetop gap 130. Alternatively, e.g., as shown inFIG. 3 , if the filaments extend downwardly from the ceiling, thesupport 106 can include a downwardly projecting wall 107 that surrounds thetop gap 130. Thebody 105 or wall 107 can be integrally formed or fused to thesupport 106 to provide a fluid-tight seal. -
FIG. 5A is a schematic diagram of a portion of an intra-chamber electrode assembly. Anintra-chamber electrode assembly 500 includesmultiple filaments 400 attached at asupport 502. Theelectrode assembly 500 can provide theelectrode assembly 120, and thefilaments 400 can provide the filaments, e.g.,filaments 310, of theelectrode assembly 120. In some implementations, the filaments extend in parallel to each other. - The
filaments 400 are separated from one another by afilament spacing 510. Thefilament spacing 510 can be the surface-to-surface distance; for parallel filaments the spacing can be measured perpendicular to the longitudinal axis of the filaments. The spacing 510 can impact plasma uniformity. If the spacing is too large, then the filaments can create shadowing and non-uniformity. On the other hand, if the spacing is too small, the plasma cannot migrate between thetop gap 130 and thebottom gap 132, and non-uniformity will be increased or ion density or free radical density will be reduced. In some implementations, thefilament spacing 510 is uniform across theassembly 500. - The
filament spacing 510 can be 3 to 20 mm, e.g., 8 mm. At high pressure, e.g., 2-10 torr in N2, the filament spacing may be 20 mm to 3 mm. A compromise over the pressure range may be 5-10 mm. At lower pressure and greater distance to workpiece larger spacing may be effectively used. -
FIGS. 5B-C are cross-sectional schematic diagrams of an intra-chamber electrode assembly with different plasma region states. Referring toFIG. 5B , aplasma region 512 surrounds thefilaments 400. Theplasma region 512 has anupper plasma region 514 and alower plasma region 516. Theupper plasma region 514 is located at thetop gap 130 and thelower plasma region 516 is located at thebottom gap 132. As shown inFIG. 5B , theupper plasma region 514 and thelower plasma region 516 is connected through the gaps between thefilaments 400, forming acontinuous plasma region 512. This continuity of theplasma regions 512 is desirable, as theregions 514 and 516 ‘communicate’ with each other through exchange of plasma. Particularly for a monopolar drive (all the filaments connected to same power source) and a grounded top electrode as the main ground path, the exchanging of plasma helps keep the two regions electrically balanced, aiding plasma stability and repeatability. - In the case of a monopolar drive with the filaments driven with respect to some other ground and in the absence of a top ground (such as with a grounded workpiece) then plasma need not be generated above the filaments. Also in the case of differential drive (e.g. alternating filaments connect to each side of power supply output), then plasma can be generated between the filaments, so plasma above the filaments is not necessary. However, in these cases a grounded top electrode should not be detrimental.
- Referring to
FIG. 5C , in this state, theupper plasma region 514 and thelower plasma region 516 is not connected to each other. This ‘pinching’ of theplasma region 512 is not desirable for plasma stability. The shape of theplasma region 512 can be modified by various factors to remove the plasma region discontinuity or improve plasma uniformity. - In general, the
regions upper plasma region 514 and thelower plasma region 516 shown inFIG. 5C represents a substantially low plasma density relative to the two regions, and not necessarily a complete lack of plasma in the gaps. - The
top gap 130 is a factor affecting the shape of the plasma region. Depending on the pressure, when thetop electrode 108 is grounded, reducing thetop gap 130 typically leads to a reduction of plasma density in theupper plasma region 514. Specific values for thetop gap 130 can be determined based on computer modelling of the plasma chamber. For example, thetop gap 130 can be 3 mm to 8 mm, e.g., 4.5 mm. - The
bottom gap 132 is a factor affecting the shape of the plasma region. Depending on the pressure, when theworkpiece support electrode 116 is grounded, reducing thebottom gap 132 typically leads to a reduction of plasma density in thelower plasma region 516. Specific values for thebottom gap 132 can be determined based on computer modelling of the plasma chamber. For example, thebottom gap 132 can be 3 mm to 9 mm, e.g., 4.5 mm. - The phase of the RF signal driving
adjacent filaments 400 is a factor affecting the shape of the plasma region. When the phase difference of the two RF signals driving the adjacent filaments is set to 0 degrees (‘monopolar’, or ‘singled-ended’), the plasma region is pushed out from the gaps between thefilaments 400, leading to discontinuity or non-uniformity. When the phase difference of the RF signals driving the adjacent filaments is set to 180 degrees (‘differential’), the plasma region is more strongly confined between thefilaments 400. Any phase difference between 0 and 360 degrees can be used to affect the shape of theplasma region 512. - The grounding of the
workpiece support electrode 116 is a factor affecting the shape of the plasma region. Imperfect RF grounding of theelectrode 116 in combination with 0 degrees of phase difference between the RF signals driving the adjacent filaments pushes the plasma region towards the top gap. However, if adjacent filaments, e.g.,filaments electrode 116. Without being limited to any particular theory, this can be because the RF current is returned through the adjacent electrodes due to the differential nature of the driving signals. - In some implementations, the
intra-chamber electrode assembly 500 can include a first group and a second group offilaments 400. The first group and the second group can be spatially arranged such that the filaments alternate between the first group and the second group. For example, the first group can include thefilament 402, the second group can include thefilaments RF power supply 522 and the second group can be driven by asecond terminal 522 b of theRF power supply 522. TheRF power supply 522 can be configured to provide a first RF signal at the terminal 522 a and a second RF signal atterminal 522 b. The first and second RF signals can have a same frequency and a stable phase relationship to each other. For example, the phase relationship can include 0 degrees and 180 degrees. In some implementations, the phase relationship between the first and the second RF signals provided by theRF power supply 522 can be tunable between 0 and 360. In some implementations, theRF supply 522 can include two individual RF power supplies that are phase-locked to each other. -
FIGS. 6A-C are schematic diagrams of various examples of intra-chamber electrode assembly configurations. Referring toFIG. 6A , anintra-chamber electrode assembly 600 includes a firstinterdigitated electrode subassembly 620 and a secondinterdigitated electrode subassembly 630. Thesubassembly parallel filaments 400 that are connected by abus 650 at one end. In some implementations, thebus 650 connecting thefilaments 400 is located outside of theinterior space 104. In some implementations, thebus 650 connecting thefilaments 400 is located in theinterior space 104. The firstinterdigitated electrode subassembly 620 and a secondinterdigitated electrode subassembly 630 are oriented parallel to each other such that the filaments of thesubassemblies - Referring to
FIG. 6B , anintra-chamber electrode assembly 602 includes afirst electrode subassembly 622 and asecond electrode subassembly 632 configured such that the filaments of thesubassemblies - The
intra-chamber electrode assembly 602 can be driven with RF signals in various ways. In some implementations, thesubassembly 622 andsubassembly 632 are driven with a same RF signal with respect to an RF ground. In some implementations, thesubassembly 622 andsubassembly 632 are driven with a differential RF signal. In some implementations, thesubassembly 622 is driven with an RF signal, andsubassembly 632 is connected to an RF ground. - Referring to
FIG. 6C , anintra-chamber electrode assembly 604 includes afirst electrode subassembly 624 and asecond electrode subassembly 634 that are overlaid. Thefirst electrode subassembly 624 and thesecond electrode subassembly 634 each has multipleparallel filaments 400 that are connected bybuses first electrode subassembly 624 and thesecond electrode subassembly 634 are configured such that the filaments of thesubassemblies subassemblies 624, 635 arranged in alternating pattern. - The
intra-chamber electrode assembly 604 can be driven with RF signals in various ways. In some implementations, thesubassembly 624 andsubassembly 634 are driven with a same RF signal with respect to an RF ground. In some implementations, thesubassembly 624 andsubassembly 634 are driven with a differential RF signal. In some implementations, thesubassembly 624 is driven with an RF signal, and thesubassembly 634 is connected to an RF ground. - In some implementations, the
intra-chamber electrode assembly 604 is driven in a single-ended manner with an RF signal using a center-feed 640. The center-feed 640 is connected to an X-shapedcurrent splitter 642 at the center. The four corners of thesubassemblies current splitter 642 using vertical feed structures. - In general, differential driving of the
subassemblies respective subassemblies - Particular embodiments of the invention have been described. However, other embodiments are possible. For example:
-
- The workpiece could be held stationary within the plasma chamber.
- The platform could be moved linearly or rotated such that the workpiece moves in the plasma chamber.
- Other embodiments are within the scope of the following claims.
Claims (21)
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CN201880026528.2A CN110537242A (en) | 2017-04-24 | 2018-04-23 | Plasma reactor with electrode thread |
JP2019557440A JP7051897B2 (en) | 2017-04-24 | 2018-04-23 | Plasma reactor with electrode filament |
KR1020197034563A KR102505096B1 (en) | 2017-04-24 | 2018-04-23 | Plasma Reactor with Electrode Filaments |
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KR20190134811A (en) | 2019-12-04 |
JP2020521269A (en) | 2020-07-16 |
TWI776874B (en) | 2022-09-11 |
TW201903819A (en) | 2019-01-16 |
US20180308666A1 (en) | 2018-10-25 |
CN110537242A (en) | 2019-12-03 |
WO2018200404A1 (en) | 2018-11-01 |
JP7051897B2 (en) | 2022-04-11 |
KR102505096B1 (en) | 2023-03-06 |
US11424104B2 (en) | 2022-08-23 |
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