JP5141227B2 - 半導体装置の製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 80
- 238000004519 manufacturing process Methods 0.000 title claims description 60
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 122
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 102
- 238000010438 heat treatment Methods 0.000 claims description 80
- 238000000034 method Methods 0.000 claims description 47
- 238000000859 sublimation Methods 0.000 claims description 44
- 230000008022 sublimation Effects 0.000 claims description 44
- 239000012535 impurity Substances 0.000 claims description 30
- 238000005468 ion implantation Methods 0.000 claims description 23
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 61
- 230000003746 surface roughness Effects 0.000 description 42
- 238000000137 annealing Methods 0.000 description 28
- 239000000758 substrate Substances 0.000 description 22
- 230000004913 activation Effects 0.000 description 21
- 239000007789 gas Substances 0.000 description 18
- 239000000463 material Substances 0.000 description 12
- 230000006866 deterioration Effects 0.000 description 11
- 239000011229 interlayer Substances 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910005883 NiSi Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910021334 nickel silicide Inorganic materials 0.000 description 2
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000010000 carbonizing Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
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- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
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Description
Y.Negoro et al.、"Flat Surface after High−Temperature Annealing for Phosphorus−Ion Implanted 4H−SiC (0001) Using Graphite Cap"、Maaterials Science Forum、2004年、Vols.457−460、p.933−936
図1は、本発明の一実施の形態である実施の形態1における半導体装置としてのMOSFET(Metal Oxide Semiconductor Field Effect Transistor;酸化膜電界効果トランジスタ)の構成を示す概略断面図である。図1を参照して、実施の形態1におけるMOSFETについて説明する。
次に、本発明の他の実施の形態である実施の形態2における半導体装置の製造方法について説明する。図12は、実施の形態2における活性化アニール工程において使用される熱処理炉の構成を示す概略図である。実施の形態2における半導体装置としてのMOSFETの製造方法は、基本的には実施の形態1の場合と同様に実施される。しかし、図2および図12を参照して、工程(S60)として実施される活性化アニール工程にて使用される熱処理炉の構成において、実施の形態2は実施の形態1とは異なっている。その結果、活性化アニール工程において、実施の形態2と実施の形態1とは相違点を有している。すなわち、図12を参照して、実施の形態2の工程(S60)において用いられる熱処理炉5の発熱体54は、表面にSiCからなる犠牲昇華層54Aを有している。そして、ウェハ3は、発熱体54の犠牲昇華層54A上に載置されている。すなわち、実施の形態2における工程(S60)では、図9および図12を参照して、ウェハ3は、一方の主面である第2の主面12Bとは反対側の主面が犠牲昇華体としての犠牲昇華層54Aに接触するように、犠牲昇華層54A上に載置された状態で加熱される。
次に、本発明のさらに他の実施の形態である実施の形態3における半導体装置の製造方法について説明する。図13は、実施の形態3における活性化アニール工程において使用される熱処理炉の構成を示す概略図である。実施の形態3における半導体装置としてのMOSFETの製造方法は、基本的には実施の形態1の場合と同様に実施される。しかし、図2を参照して、工程(S60)として実施される活性化アニール工程において、実施の形態3は実施の形態1とは異なっている。
Claims (7)
- 少なくとも一方の主面が炭化珪素からなるウェハを準備する工程と、
前記ウェハを加熱することにより、前記ウェハを熱処理する工程とを備え、
前記ウェハを熱処理する工程では、前記ウェハとは別の発生源から発生した炭化珪素の蒸気を含む雰囲気中において、前記ウェハが加熱され、
前記ウェハを熱処理する工程では、前記ウェハが、少なくとも表面が炭化珪素からなる犠牲昇華体とともに加熱室内において加熱され、前記犠牲昇華体は、炭化珪素からなっており、
前記犠牲昇華体は前記ウェハよりも高温に加熱され、
前記ウェハは、蓋部材により覆われた状態で加熱され、
前記蓋部材は、前記一方の主面に沿って配置される前記犠牲昇華体と、前記犠牲昇華体に接続され、前記一方の主面に沿う前記犠牲昇華体の主面に対して交差する方向に延びる脚部とを含んでいる、半導体装置の製造方法。 - 前記ウェハは、前記一方の主面とは反対側の主面である他方の主面が前記犠牲昇華体に接触するように、前記犠牲昇華体上に載置された状態で加熱される、請求項1に記載の半導体装置の製造方法。
- 前記ウェハを熱処理する工程では、前記ウェハが1600℃以上の温度域に加熱される、請求項1または2に記載の半導体装置の製造方法。
- 前記ウェハを熱処理する工程では、前記ウェハの前記一方の主面上に、前記一方の主面を覆うキャップ層が形成された状態で、前記ウェハが加熱される、請求項1〜3のいずれか1項に記載の半導体装置の製造方法。
- 前記キャップ層は、炭素を主成分とし、残部不純物からなっている、請求項4に記載の半導体装置の製造方法。
- 前記キャップ層は、珪素を主成分とし、残部不純物からなっている、請求項4に記載の半導体装置の製造方法。
- 前記ウェハを準備する工程よりも後であって、前記ウェハを熱処理する工程よりも前に、前記ウェハにイオン注入を実施する工程をさらに備え、
前記イオン注入を実施する工程では、前記ウェハが300℃以上に加熱された状態で、前記イオン注入が実施される、請求項1〜6のいずれか1項に記載の半導体装置の製造方法。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007320951A JP5141227B2 (ja) | 2007-12-12 | 2007-12-12 | 半導体装置の製造方法 |
CA002677412A CA2677412A1 (en) | 2007-12-12 | 2008-08-21 | Semiconductor device manufacturing method and semiconductor device |
EP08792583A EP2117036A4 (en) | 2007-12-12 | 2008-08-21 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
US12/526,731 US8697555B2 (en) | 2007-12-12 | 2008-08-21 | Method of producing semiconductor device and semiconductor device |
KR1020097015890A KR20100100585A (ko) | 2007-12-12 | 2008-08-21 | 반도체 장치의 제조 방법 및 반도체 장치 |
PCT/JP2008/064862 WO2009075124A1 (ja) | 2007-12-12 | 2008-08-21 | 半導体装置の製造方法および半導体装置 |
CN2008800047477A CN101647093B (zh) | 2007-12-12 | 2008-08-21 | 制造半导体装置的方法和半导体装置 |
TW097133497A TW200926303A (en) | 2007-12-12 | 2008-09-01 | Semiconductor device manufacturing method and semiconductor device |
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US (1) | US8697555B2 (ja) |
EP (1) | EP2117036A4 (ja) |
JP (1) | JP5141227B2 (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009231341A (ja) * | 2008-03-19 | 2009-10-08 | Ulvac Japan Ltd | アニール装置、SiC半導体基板の熱処理方法 |
JP2010034481A (ja) * | 2008-07-31 | 2010-02-12 | Sumitomo Electric Ind Ltd | 半導体装置の製造方法および半導体装置 |
SG183740A1 (en) | 2009-02-20 | 2012-09-27 | Semiconductor Energy Lab | Semiconductor device and manufacturing method of the same |
JP2011035257A (ja) * | 2009-08-04 | 2011-02-17 | Showa Denko Kk | 炭化珪素半導体装置の製造方法 |
JP2011060901A (ja) * | 2009-09-08 | 2011-03-24 | Sumitomo Electric Ind Ltd | 半導体装置および半導体装置の製造方法 |
US8735234B2 (en) * | 2010-02-18 | 2014-05-27 | Varian Semiconductor Equipment Associates, Inc. | Self-aligned ion implantation for IBC solar cells |
JP5564682B2 (ja) * | 2010-04-28 | 2014-07-30 | 学校法人関西学院 | 半導体素子の製造方法 |
DE102010033943A1 (de) * | 2010-08-11 | 2012-02-16 | Osram Opto Semiconductors Gmbh | Verfahren und Vorrichtung zum Heizen von Halbleitermaterial |
KR101926687B1 (ko) * | 2011-10-24 | 2018-12-07 | 엘지이노텍 주식회사 | 에피 웨이퍼 제조 장치, 에피 웨이퍼 제조 방법 및 에피 웨이퍼 |
DE102012003903A1 (de) * | 2012-02-27 | 2013-08-29 | Centrotherm Thermal Solutions Gmbh & Co. Kg | Verfahren zur thermischen Behandlung von Siliziumcarbidsubstraten |
JP2014007310A (ja) * | 2012-06-26 | 2014-01-16 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置の製造方法および炭化珪素半導体装置 |
US9257283B2 (en) * | 2012-08-06 | 2016-02-09 | General Electric Company | Device having reduced bias temperature instability (BTI) |
JP6093154B2 (ja) * | 2012-11-16 | 2017-03-08 | 東洋炭素株式会社 | 収容容器の製造方法 |
US10403509B2 (en) * | 2014-04-04 | 2019-09-03 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Basal plane dislocation elimination in 4H—SiC by pulsed rapid thermal annealing |
JP6395299B2 (ja) * | 2014-09-11 | 2018-09-26 | 国立研究開発法人産業技術総合研究所 | 炭化珪素半導体素子及び炭化珪素半導体素子の製造方法 |
CN105470119B (zh) * | 2015-11-19 | 2018-09-11 | 泰科天润半导体科技(北京)有限公司 | 一种碳化硅器件的正面欧姆接触的加工方法 |
JP6853621B2 (ja) | 2016-03-17 | 2021-03-31 | 国立大学法人大阪大学 | 炭化珪素半導体装置の製造方法 |
US11189493B2 (en) * | 2018-02-19 | 2021-11-30 | Denso Corporation | Silicon carbide semiconductor device and method for manufacturing the same |
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JPH09502303A (ja) | 1993-09-03 | 1997-03-04 | ナショナル・セミコンダクター・コーポレイション | マイクロエレクトロニクスの製造に使用するための平坦な分離方法 |
US5989340A (en) * | 1995-11-14 | 1999-11-23 | Siemens Aktiengesellschaft | Process and device for sublimation growing of silicon carbide monocrystals |
WO1997039477A1 (en) | 1996-04-16 | 1997-10-23 | Rutgers, The State University | P-type silicon carbide formation by ion implantation and p-type silicon carbide |
US5981900A (en) * | 1996-06-03 | 1999-11-09 | The United States Of America As Represented By The Secretary Of The Army | Method of annealing silicon carbide for activation of ion-implanted dopants |
DE19633183A1 (de) * | 1996-08-17 | 1998-02-19 | Daimler Benz Ag | Halbleiterbauelement mit durch Ionenimplantation eingebrachten Fremdatomen und Verfahren zu dessen Herstellung |
JP3550967B2 (ja) * | 1997-09-11 | 2004-08-04 | 富士電機ホールディングス株式会社 | 炭化けい素基板の熱処理方法 |
JP3972450B2 (ja) * | 1998-03-20 | 2007-09-05 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
FR2801723B1 (fr) * | 1999-11-25 | 2003-09-05 | Commissariat Energie Atomique | Couche de silicium tres sensible a l'oxygene et procede d'obtention de cette couche |
JP3741283B2 (ja) * | 2003-03-10 | 2006-02-01 | 学校法人関西学院 | 熱処理装置及びそれを用いた熱処理方法 |
JP4666200B2 (ja) * | 2004-06-09 | 2011-04-06 | パナソニック株式会社 | SiC半導体装置の製造方法 |
JP2006339396A (ja) * | 2005-06-02 | 2006-12-14 | Kwansei Gakuin | イオン注入アニール方法、半導体素子の製造方法、及び半導体素子 |
JP4961805B2 (ja) * | 2006-04-03 | 2012-06-27 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
JP2008166729A (ja) * | 2006-12-08 | 2008-07-17 | Canon Anelva Corp | 基板加熱処理装置及び半導体製造方法 |
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2007
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- 2008-08-21 CA CA002677412A patent/CA2677412A1/en not_active Abandoned
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- 2008-08-21 WO PCT/JP2008/064862 patent/WO2009075124A1/ja active Application Filing
- 2008-08-21 KR KR1020097015890A patent/KR20100100585A/ko not_active Application Discontinuation
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Also Published As
Publication number | Publication date |
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EP2117036A1 (en) | 2009-11-11 |
CN101647093B (zh) | 2012-02-01 |
KR20100100585A (ko) | 2010-09-15 |
US20100044721A1 (en) | 2010-02-25 |
WO2009075124A1 (ja) | 2009-06-18 |
US8697555B2 (en) | 2014-04-15 |
JP2009146997A (ja) | 2009-07-02 |
TW200926303A (en) | 2009-06-16 |
CN101647093A (zh) | 2010-02-10 |
EP2117036A4 (en) | 2012-02-08 |
CA2677412A1 (en) | 2009-06-18 |
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