JP5107186B2 - 加熱装置 - Google Patents
加熱装置 Download PDFInfo
- Publication number
- JP5107186B2 JP5107186B2 JP2008227613A JP2008227613A JP5107186B2 JP 5107186 B2 JP5107186 B2 JP 5107186B2 JP 2008227613 A JP2008227613 A JP 2008227613A JP 2008227613 A JP2008227613 A JP 2008227613A JP 5107186 B2 JP5107186 B2 JP 5107186B2
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- Prior art keywords
- heating
- conductive member
- substrate
- temperature
- ceramic substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
Description
まず、種々の熱伝導性部材14による均熱性の評価を行った。
次に、種々の条件の空隙31による均熱性の評価を行った。
11…セラミックス基体
12…抵抗発熱体
13…誘電体層
14…熱伝導性部材
40…ガス導入装置
Claims (16)
- 基板を載置する加熱面を有し、セラミックスよりなる基体と、
この基体の内部に埋設された発熱体と、
この基体の加熱面と発熱体との間に配設され、基体の熱伝導率よりも高い熱伝導率を有する熱伝導性部材と、
この基体の背面に近接して設けられた温度調節部材と
この基体と温度調節部材との間に接続されて圧力調節可能にガスを導くガス導入装置と
を備え、
この基体と温度調節部材との間に空隙を有し、この空隙のガス圧力を調節可能にガスを導く前記ガス導入装置と接続され、前記ガス圧力を調節することによって、前記セラミックス基体から前記温度調節部材へ移動する熱量を調節することを特徴とする加熱装置。 - 前記基体が、アルミナを主成分とするセラミックスよりなることを特徴とする請求項1に記載の加熱装置。
- 前記基体が、酸化イットリウムを主成分とするセラミックスよりなることを特徴とする請求項1に記載の加熱装置。
- 前記基体が、窒化アルミニウムを主成分とするセラミックスよりなることを特徴とする請求項1に記載の加熱装置。
- 前記熱伝導性部材が、アルミニウム又はアルミニウム合金からなることを特徴とする請求項2〜4のいずれか1項に記載の加熱装置。
- 前記熱伝導性部材が、インジウム又はインジウム合金からなることを特徴とする請求項2又は3に記載の加熱装置。
- 前記熱伝導性部材の厚さが0.5〜5.0mm程度であることを特徴とする請求項1に記載の加熱装置。
- 前記熱伝導性部材が、熱圧接により形成された部材であることを特徴とする請求項1に記載の加熱装置。
- 前記熱伝導性部材が、高周波電極を兼ねることを特徴とする請求項1に記載の加熱装置。
- 前記基体が、基板を載置する上側部分と、温度調節部材に面する下側部分とに二分され、この上側部分と下側部分との間に前記熱伝導性部材が介在している三層構造になることを特徴とする請求項1に記載の加熱装置。
- 前記基体が、静電電極を具備し、この静電電極が、前記基体の上側部分に含まれ、かつ、前記発熱体が、前記基体の下側部分に含まれることを特徴とする請求項1又は10に記載の加熱装置。
- 前記基体の周縁部近傍に、当該基体と前記温度調節部材とを固定する固定具を備え、前記基体と前記温度調節部材の間に気密な空隙を有し、その空隙が外部とガス導入路により連通していることを特徴とする請求項1に記載の加熱装置。
- 前記固定具により固定された前記基体と前記温度調節部材との間にスペーサを備えることを特徴とする請求項12に記載の加熱装置。
- 前記ガス導入装置は、基体と温度調節部材との間に導くガスの種類を選択可能であることを特徴とする請求項1〜13のいずれか1項に記載の加熱装置。
- 前記熱伝導性部材の腐食を防止するために前記熱伝導性部材の少なくとも側面に設けられた耐食性材料を備えることを特徴とする請求項1〜14のいずれか1項に記載の加熱装置。
- 前記空隙は、気密な空隙である、請求項1〜15のいずれか1項に記載の加熱装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008227613A JP5107186B2 (ja) | 2007-09-10 | 2008-09-04 | 加熱装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007234485 | 2007-09-10 | ||
JP2007234485 | 2007-09-10 | ||
JP2008227613A JP5107186B2 (ja) | 2007-09-10 | 2008-09-04 | 加熱装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009087932A JP2009087932A (ja) | 2009-04-23 |
JP5107186B2 true JP5107186B2 (ja) | 2012-12-26 |
Family
ID=40386295
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008227613A Active JP5107186B2 (ja) | 2007-09-10 | 2008-09-04 | 加熱装置 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20090159588A1 (ja) |
EP (1) | EP2045834B1 (ja) |
JP (1) | JP5107186B2 (ja) |
KR (2) | KR20090026727A (ja) |
CN (1) | CN101389161B (ja) |
DE (1) | DE602008004806D1 (ja) |
SG (1) | SG151199A1 (ja) |
TW (1) | TWI459851B (ja) |
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-
2008
- 2008-09-01 TW TW097133414A patent/TWI459851B/zh active
- 2008-09-03 KR KR1020080086727A patent/KR20090026727A/ko active Application Filing
- 2008-09-04 JP JP2008227613A patent/JP5107186B2/ja active Active
- 2008-09-05 CN CN2008102153364A patent/CN101389161B/zh active Active
- 2008-09-08 US US12/206,142 patent/US20090159588A1/en not_active Abandoned
- 2008-09-09 DE DE602008004806T patent/DE602008004806D1/de active Active
- 2008-09-09 EP EP08252981A patent/EP2045834B1/en not_active Expired - Fee Related
- 2008-09-10 SG SG200806670-6A patent/SG151199A1/en unknown
-
2013
- 2013-12-04 KR KR1020130149702A patent/KR20130139213A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
CN101389161B (zh) | 2013-11-06 |
CN101389161A (zh) | 2009-03-18 |
JP2009087932A (ja) | 2009-04-23 |
TWI459851B (zh) | 2014-11-01 |
SG151199A1 (en) | 2009-04-30 |
EP2045834A3 (en) | 2009-04-15 |
KR20090026727A (ko) | 2009-03-13 |
EP2045834B1 (en) | 2011-02-02 |
TW200934281A (en) | 2009-08-01 |
DE602008004806D1 (de) | 2011-03-17 |
KR20130139213A (ko) | 2013-12-20 |
EP2045834A2 (en) | 2009-04-08 |
US20090159588A1 (en) | 2009-06-25 |
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