JP5073991B2 - 絶縁ゲート型半導体装置 - Google Patents
絶縁ゲート型半導体装置 Download PDFInfo
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- JP5073991B2 JP5073991B2 JP2006227042A JP2006227042A JP5073991B2 JP 5073991 B2 JP5073991 B2 JP 5073991B2 JP 2006227042 A JP2006227042 A JP 2006227042A JP 2006227042 A JP2006227042 A JP 2006227042A JP 5073991 B2 JP5073991 B2 JP 5073991B2
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- 239000004065 semiconductor Substances 0.000 title claims description 51
- 239000010410 layer Substances 0.000 claims description 158
- 239000011229 interlayer Substances 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 19
- 230000002457 bidirectional effect Effects 0.000 claims description 11
- 238000009413 insulation Methods 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 108091006146 Channels Proteins 0.000 description 31
- 230000003071 parasitic effect Effects 0.000 description 14
- 238000010586 diagram Methods 0.000 description 12
- 210000000746 body region Anatomy 0.000 description 8
- 239000012535 impurity Substances 0.000 description 7
- 238000007599 discharging Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000010030 laminating Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0856—Source regions
- H01L29/0865—Disposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0856—Source regions
- H01L29/0869—Shape
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
2 n−型エピタキシャル層
3 チャネル層
5 トレンチ
6 ゲート絶縁膜
7 ゲート電極
10 層間絶縁膜
12 ソース領域
12a 第1ソース領域
12b 第2ソース領域
13 バックゲート領域
13a 第1バックゲート領域
13b 第2バックゲート領域
14 第1電極層
15 第2電極層
16 ドレイン電極
20 MOSFET
21 二次電池
22 保護回路
24 制御回路
29 制御端子
41 n+型シリコン半導体基板
42 n−型エピタキシャル層
43 チャネル層
44 トレンチ
45 ゲート酸化膜
46 ゲート電極
48 ソース領域
49 ボディ領域
50 層間絶縁膜
51 ソース電極
52 ドレイン電極
101 n+型シリコン半導体基板
102 n−型エピタキシャル層
103 チャネル層
105 トレンチ
106 ゲート酸化膜
107 ゲート電極
110 層間絶縁膜
112 ソース領域
113 バックゲート領域
114 第1電極層
115 第2電極層
Claims (8)
- 一導電型半導体基板に一導電型半導体層を積層したドレイン領域と、
前記半導体層表面に設けた逆導電型のチャネル層と、
前記半導体層表面においてストライプ状に延在し、チャネル層を貫通する深さを有するトレンチと、
該トレンチの内壁に設けたゲート絶縁膜と、
前記トレンチに埋め込まれたゲート電極と、
前記トレンチ間の前記チャネル層表面に設けられた一導電型のソース領域と、
前記ソース領域下方の前記チャネル層に設けられた第1バックゲート領域と、前記チャネル層表面に設けられた第2バックゲート領域とからなる逆導電型のバックゲート領域と、
前記ソース領域上に設けられ、前記ソース領域と接続する第1電極層と、
前記第2バックゲート領域上に設けられ、前記第2バックゲート領域と接続する第2電極層とを有し、
前記第2バックゲート領域は前記ソース領域の周囲に一環状に配置され、前記第1バックゲート領域は前記第2バックゲート領域と連結し、
前記第1電極層は前記ソース領域及び前記第1バックゲート領域上を覆うように板状体として形成され、前記第2電極層は前記第1電極層の周囲に形成され、
前記第1バックゲート領域は、前記第2バックゲート領域を介して前記第2電極層と電気的に接続することを特徴とする絶縁ゲート型半導体装置。 - 前記ソース領域は、前記トレンチに隣接する第1ソース領域と、該第1ソース領域の間の第2ソース領域を有し、前記第1バックゲート領域は前記第2ソース領域下方に設けられることを特徴とする請求項1に記載の絶縁ゲート型半導体装置。
- 前記第2ソース領域は、前記チャネル層表面から露出して前記第1電極層とコンタクトすることを特徴とする請求項2に記載の絶縁ゲート型半導体装置。
- 前記ドレイン領域に接続する第3電極層を有し、前記ゲート電極の電圧非印加時に前記第1電極層および前記第3電極層のうちいずれか一方と前記第2電極層を電気的に接続することを特徴とする請求項1に記載の絶縁ゲート型半導体装置。
- 前記第1電極層および第3電極層のうちいずれか低電位の電極層を前記第2電極層と接続することを特徴とする請求項4に記載の絶縁ゲート型半導体装置。
- 前記第1電極層および第3電極層のうちいずれか他方は電源電圧が印加されることを特徴とする請求項4に記載の絶縁ゲート型半導体装置。
- 前記ソース領域および前記ドレイン領域の電位に応じて、前記ゲート電極の電圧印加時に前記ソース領域および前記ドレイン領域間に双方向の電流経路が形成されることを特徴とする請求項1に記載の絶縁ゲート型半導体装置。
- 前記ゲート電極と前記第1電極層との間に層間絶縁膜が設けられ、該層間絶縁膜は前記トレンチ内に埋め込まれることを特徴とする請求項1に記載の絶縁ゲート型半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006227042A JP5073991B2 (ja) | 2006-08-23 | 2006-08-23 | 絶縁ゲート型半導体装置 |
CN2007101409862A CN101132024B (zh) | 2006-08-23 | 2007-08-15 | 绝缘栅型半导体装置 |
US11/839,293 US7528441B2 (en) | 2006-08-23 | 2007-08-15 | Insulated gate semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006227042A JP5073991B2 (ja) | 2006-08-23 | 2006-08-23 | 絶縁ゲート型半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008053378A JP2008053378A (ja) | 2008-03-06 |
JP5073991B2 true JP5073991B2 (ja) | 2012-11-14 |
Family
ID=39112564
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006227042A Expired - Fee Related JP5073991B2 (ja) | 2006-08-23 | 2006-08-23 | 絶縁ゲート型半導体装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7528441B2 (ja) |
JP (1) | JP5073991B2 (ja) |
CN (1) | CN101132024B (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060163650A1 (en) * | 2005-01-27 | 2006-07-27 | Ling Ma | Power semiconductor device with endless gate trenches |
JP5465937B2 (ja) * | 2009-07-02 | 2014-04-09 | トヨタ自動車株式会社 | 半導体装置、半導体装置の制御方法、半導体モジュール |
CN104157648B (zh) * | 2010-07-27 | 2017-05-17 | 株式会社电装 | 具有开关元件和续流二极管的半导体装置及其控制方法 |
DE102011079747A1 (de) | 2010-07-27 | 2012-02-02 | Denso Corporation | Halbleitervorrichtung mit Schaltelement und Freilaufdiode, sowie Steuerverfahren hierfür |
EP2793463A4 (en) | 2011-12-12 | 2015-06-03 | Sony Corp | CLIENT TERMINAL, CLIENT TERMINAL CONTROL METHOD, TRANSMISSION SERVER, TRANSMISSION SERVER CONTROL METHOD, AND PROGRAM |
JP2014187080A (ja) * | 2013-03-22 | 2014-10-02 | Panasonic Corp | 半導体素子、半導体装置及び複合モジュール |
CN105378933B (zh) * | 2013-07-11 | 2018-11-16 | 松下知识产权经营株式会社 | 半导体装置 |
KR101760266B1 (ko) * | 2015-10-30 | 2017-07-24 | 매그나칩 반도체 유한회사 | 파워 모스펫 및 이의 제조 방법 |
KR102593101B1 (ko) | 2022-03-11 | 2023-10-24 | 화인칩스 주식회사 | 파워 모스펫 |
Family Cites Families (13)
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JPS55133574A (en) * | 1979-04-05 | 1980-10-17 | Nec Corp | Insulated gate field effect transistor |
US4961100A (en) * | 1988-06-20 | 1990-10-02 | General Electric Company | Bidirectional field effect semiconductor device and circuit |
DE69631995T2 (de) * | 1995-06-02 | 2005-02-10 | Siliconix Inc., Santa Clara | Bidirektional sperrender Graben-Leistungs-MOSFET |
JPH09283756A (ja) * | 1996-04-18 | 1997-10-31 | Toyota Autom Loom Works Ltd | アナログスイッチ |
US6429481B1 (en) * | 1997-11-14 | 2002-08-06 | Fairchild Semiconductor Corporation | Field effect transistor and method of its manufacture |
US6348712B1 (en) * | 1999-10-27 | 2002-02-19 | Siliconix Incorporated | High density trench-gated power MOSFET |
JP2001320050A (ja) * | 2000-05-10 | 2001-11-16 | Sanyo Electric Co Ltd | 絶縁ゲート型半導体装置およびその製造方法 |
JP2002118258A (ja) | 2000-10-10 | 2002-04-19 | Sanyo Electric Co Ltd | Mosfetおよびそれを用いた保護回路装置 |
JP2003332270A (ja) * | 2002-05-15 | 2003-11-21 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP2004055803A (ja) * | 2002-07-19 | 2004-02-19 | Renesas Technology Corp | 半導体装置 |
JP2004055812A (ja) * | 2002-07-19 | 2004-02-19 | Renesas Technology Corp | 半導体装置 |
US7354342B2 (en) * | 2003-07-30 | 2008-04-08 | Igt | Gaming device having a multiple coordinate award distributor including award percentages |
JP4760023B2 (ja) * | 2005-01-24 | 2011-08-31 | 株式会社デンソー | 半導体装置 |
-
2006
- 2006-08-23 JP JP2006227042A patent/JP5073991B2/ja not_active Expired - Fee Related
-
2007
- 2007-08-15 US US11/839,293 patent/US7528441B2/en active Active
- 2007-08-15 CN CN2007101409862A patent/CN101132024B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN101132024A (zh) | 2008-02-27 |
US20080048255A1 (en) | 2008-02-28 |
JP2008053378A (ja) | 2008-03-06 |
US7528441B2 (en) | 2009-05-05 |
CN101132024B (zh) | 2010-08-11 |
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