JP5008832B2 - 半導体装置及び半導体装置の製造方法 - Google Patents
半導体装置及び半導体装置の製造方法 Download PDFInfo
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- JP5008832B2 JP5008832B2 JP2005118625A JP2005118625A JP5008832B2 JP 5008832 B2 JP5008832 B2 JP 5008832B2 JP 2005118625 A JP2005118625 A JP 2005118625A JP 2005118625 A JP2005118625 A JP 2005118625A JP 5008832 B2 JP5008832 B2 JP 5008832B2
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Description
まず図6(a)に示すようにワイヤ102をキャピラリ101に挿通し、その先端に電気トーチ103を対向させてワイヤ102との間で放電させることにより、ワイヤ102の先端を加熱、溶融し、ボール104を形成する。
このように、第1ワイヤ102aは、第1ボンディング部109では半導体チップ106の電極105にボールボンディングされる一方、第2ボンディング部110ではアイランド108にステッチボンディングされる。
図7に示すように、半導体装置100は、表面に複数の電極105が形成された半導体チップ106、その半導体チップ106が表面にボンディングされたアイランド108、アイランド108と所定の間隔をおいて配設された複数本のリード端子111、半導体チップ106上の電極105とアイランド108とを電気的に接続する第1ワイヤ102a、電極105とリード端子111とを電気的に接続する第1ワイヤ102b、及び、これら部材を封止する樹脂パッケージ部112を備えている。
また、第1ワイヤ102aは、第1ボンディング部109では、半導体チップ106の電極105にボールボンディングされる一方、第2ボンディング部110では、アイランド108にステッチボンディングされている。
特に、第2ボンディング部110では、第1ワイヤ102aとアイランド108との接続がステッチボンディングであり、その肉厚が薄く接合強度が小さいため、第2ボンディング部110に亀裂が生じたり、第2ボンディング部110がアイランド108から剥離したりすることにより、接合が外れて断線する場合が多かった。
図8(a)〜(c)は、アイランド上にバンプを形成する工程を模式的に示す工程図であり、図9(a)〜(d)は、第1ワイヤをワイヤボンディングする工程を模式的に示す工程図である。
まず、図8(a)に示すように、ワイヤ102をキャピラリ101に挿通し、その先端に電気トーチ103を対向させワイヤ102との間で放電させる事により、ワイヤ102の先端を加熱、溶融してボール104を形成する。
上記方法では、第1ワイヤ102cは、第1ボンディング部129では半導体チップ126の電極125上にボールボンディングされる一方、第2ボンディング部130ではアイランド128上のバンプ134にステッチボンディングされる。
図10に示すように、半導体装置120は、表面に複数の電極125が形成された半導体チップ126、この半導体チップ126が表面にボンディングされたアイランド128、アイランド108と所定の間隔をおいて配設された複数本のリード端子131、半導体チップ126上の電極125とアイランド128とを電気的に接続する第1ワイヤ102c、電極125とリード端子131とを電気的に接続する第1ワイヤ102d、及び、これら部材を封止する樹脂パッケージ部132を備えている。
第1ワイヤ102cは、第1ボンディング部129では半導体チップ126の電極125にボールボンディングされる一方、第2ボンディング部130では、アイランド128上のバンプ134にステッチボンディングされている。
(1) 半導体チップがアイランドの表面にダイボンディングされ、上記半導体チップの表面に形成された電極に複数の第1ワイヤのうちの少なくとも1つの一端がワイヤボンディングされて第1ボンディング部が形成されるとともにその他端が上記アイランドにワイヤボンディングされて第2ボンディング部が形成されており、上記複数の第1ワイヤは、一端が上記電極にワイヤボンディングされ、他端がリード端子にワイヤボンディングされたワイヤを含み、且つ、樹脂封止された半導体装置であって、
上記アイランド上にワイヤボンディングされた上記第1ワイヤの上記第2ボンディング部上のみに、上記アイランドに他端がワイヤボンディングされた第2ワイヤの一端がワイヤボンディングされることにより形成されたダブルボンディング部が設けられていることを特徴とする半導体装置。
(2) 上記(1)の半導体装置であって、
上記ダブルボンディング部は、ボールボンディングにより形成されていることを特徴とする。
(3) アイランドにダイボンディングされた半導体チップ上の電極と上記アイランドとをワイヤボンディングにより接続する半導体装置の製造方法であって、
複数の第1ワイヤのうちの1つの一端を、上記電極にワイヤボンディングして第1ボンディング部を形成する第1ボンディング工程と、
上記複数の第1ワイヤのうちの上記1つの他端を、上記アイランドにワイヤボンディングして第2ボンディング部を形成する第2ボンディング工程と、
第2ワイヤの一端を、上記アイランドにボンディングされた上記第1ワイヤの上記第2ボンディング部上にボンディングしてダブルボンディング部を形成するダブルボンディング工程と、
上記第2ワイヤの他端を上記アイランドにボンディングする工程と、
上記複数の第1ワイヤのうちの他の1つの一端を、前記電極にワイヤボンディングする工程と、
上記複数の第1ワイヤのうちの上記他の1つの他端を、リード端子にワイヤボンディンする工程と
を備え、
上記ダブルボンディング部が、上記第2ボンディング部上のみに、上記第2ワイヤの上記一端をワイヤボンディングすることにより形成されることを特徴とする半導体装置の製造方法。
(4) 上記(3)の半導体装置の製造方法であって、
上記ダブルボンディング工程において、上記ダブルボンディング部を、ボールボンディングにより形成することを特徴とする。
図1は、本発明の第1実施形態に係る半導体装置の一例を模式的に示す断面図である。
図1に示すように、半導体装置30は、表面に複数の電極5が形成された半導体チップ6、その半導体チップ6が表面にボンディングされたアイランド8、アイランド8と所定の間隔をおいて配設された複数本のリード端子13、半導体チップ6上の電極5とアイランド8とを電気的に接続する第1ワイヤ2a、第2ボンディング部10(図示せず)上にボールボンディングすることにより形成されたダブルボンディング部25、ダブルボンディング部25を一端とする第2ワイヤ2b、電極5とリード端子13とを電気的に接続する第1ワイヤ2c、及び、これら部材を封止する樹脂パッケージ部12を備えている。
また、半導体装置30によれば、ダブルボンディング部25が、ボールボンディングにより形成されているため、アイランド8との接合強度が大きい。従って、強固にアイランド8と接合されているため、第1ワイヤ2aの断線をより確実に防止することができる。
まず、図2(a)に示すようにワイヤ2をキャピラリ1に挿通し、その先端に電気トーチ3を対向させてワイヤ2との間で放電させることにより、ワイヤ2の先端を加熱、溶融してボール4を形成する。
このように、第1ワイヤ2aは、第1ボンディング部9では、半導体チップ6の電極5にボールボンディングされる一方、第2ボンディング部10では、アイランド8にステッチボンディングされる。
このダブルボンディング工程は、第2ボンディング工程の次に、ワイヤボンディング装置のキャピラリがX−Y方向に移動することなく、一連の工程として行われるものである。
本発明において、ダブルボンディング部とは、アイランド上にボンディングされた第1ワイヤの第2ボンディング部にさらにワイヤボンディングを行って、一体的にアイランドに接合した接合部をいう。
第2実施形態に係る半導体装置は、第2ワイヤが存在せず、第2ワイヤ第2ボンディング部が形成されていない点以外は、第1実施形態に係る半導体装置と略同様の構成であるから、その構成についての説明については省略し、ここでは、ワイヤボンディングに係る工程について説明することとする。また、第1実施形態に係る半導体装置と対応する構成要素には同一の符号を付して説明することとする。
まず、図4(a)に示すようにワイヤ2をキャピラリ1に挿通し、その先端に電気トーチ3を対向させてワイヤ2との間で放電させることにより、ワイヤ2の先端を加熱、溶融してボール4を形成する。
このように、第1ワイヤ2aは、第1ボンディング部9では、半導体チップ6の電極5にボールボンディングされる一方、第2ボンディング部10では、アイランド8にステッチボンディングされる。
このダブルボンディング工程は、第2ボンディング工程の次に、ワイヤボンディング装置のキャピラリがX−Y方向に移動することなく、一連の工程として行われるものである。
さらに、ダブルボンディング部は、第2ボンディング部上でなくとも、第1ワイヤの一部(例えば、第2ボンディング部近傍の第1ワイヤ)に形成されてもよい。第1ワイヤの一部にダブルボンディング部が形成されれば、第1ワイヤをアイランドへ強固に接合することが可能となり、第1ワイヤのアイランドへの接合強度を大きくすることが可能となるからである。
2 ワイヤ
2a 第1ワイヤ
2b 第2ワイヤ
2c 第1ワイヤ
3 電気トーチ
4、24、34 ボール
4′ 圧着ボール
5 電極
6 半導体チップ
7 クランプ
8 アイランド
9 第1ボンディング部
10 第2ボンディング部
11 第2ワイヤ第2ボンディング部
12 樹脂パッケージ部
13 リード端子
25 ダブルボンディング部
30 半導体装置
Claims (4)
- 半導体チップがアイランドの表面にダイボンディングされ、前記半導体チップの表面に形成された電極に複数の第1ワイヤのうちの少なくとも1つの一端がワイヤボンディングされて第1ボンディング部が形成されるとともにその他端が前記アイランドにワイヤボンディングされて第2ボンディング部が形成されており、前記複数の第1ワイヤは、一端が前記電極にワイヤボンディングされ、他端がリード端子にワイヤボンディングされたワイヤを含み、且つ、樹脂封止された半導体装置であって、
前記アイランド上にワイヤボンディングされた前記第1ワイヤの前記第2ボンディング部上のみに、前記アイランドに他端がワイヤボンディングされた第2ワイヤの一端がワイヤボンディングされることにより形成されたダブルボンディング部が設けられていることを特徴とする半導体装置。 - 前記ダブルボンディング部は、ボールボンディングにより形成されていることを特徴とする請求項1に記載の半導体装置。
- アイランドにダイボンディングされた半導体チップ上の電極と前記アイランドとをワイヤボンディングにより接続する半導体装置の製造方法であって、
複数の第1ワイヤのうちの1つの一端を、前記電極にワイヤボンディングして第1ボンディング部を形成する第1ボンディング工程と、
前記複数の第1ワイヤのうちの前記1つの他端を、前記アイランドにワイヤボンディングして第2ボンディング部を形成する第2ボンディング工程と、
第2ワイヤの一端を、前記アイランドにボンディングされた前記第1ワイヤの前記第2ボンディング部上にボンディングしてダブルボンディング部を形成するダブルボンディング工程と、
前記第2ワイヤの他端を前記アイランドにボンディングする工程と、
前記複数の第1ワイヤのうちの他の1つの一端を、前記電極にワイヤボンディングする工程と、
前記複数の第1ワイヤのうちの前記他の1つの他端を、リード端子にワイヤボンディンする工程と
を備え、
前記ダブルボンディング部が、前記第2ボンディング部上のみに、前記第2ワイヤの前記一端をワイヤボンディングすることにより形成されることを特徴とする半導体装置の製造方法。 - 前記ダブルボンディング工程において、前記ダブルボンディング部を、ボールボンディングにより形成することを特徴とする請求項3に記載の半導体装置の製造方法。
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JP2005118625A JP5008832B2 (ja) | 2005-04-15 | 2005-04-15 | 半導体装置及び半導体装置の製造方法 |
KR20077023206A KR20070120984A (ko) | 2005-04-15 | 2006-04-14 | 반도체 장치 및 반도체 장치의 제조 방법 |
US11/918,407 US8604627B2 (en) | 2005-04-15 | 2006-04-14 | Semiconductor device |
PCT/JP2006/307935 WO2006112393A1 (ja) | 2005-04-15 | 2006-04-14 | 半導体装置及び半導体装置の製造方法 |
CNB2006800121033A CN100514592C (zh) | 2005-04-15 | 2006-04-14 | 半导体装置及半导体装置的制造方法 |
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JP5734236B2 (ja) * | 2011-05-17 | 2015-06-17 | 株式会社新川 | ワイヤボンディング装置及びボンディング方法 |
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US9991696B2 (en) * | 2014-07-15 | 2018-06-05 | Progress Rail Services Corporation | Crashworthy memory module having a thermal wiring disconnect system |
JP6507779B2 (ja) * | 2015-03-26 | 2019-05-08 | セイコーエプソン株式会社 | 電気光学装置、電気光学装置の製造方法、および電子機器 |
CN105355617A (zh) * | 2015-11-25 | 2016-02-24 | 江苏欧密格光电科技股份有限公司 | 一种裸芯片技术中增强焊线牢靠度的结构及其方法 |
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