CN100514592C - 半导体装置及半导体装置的制造方法 - Google Patents

半导体装置及半导体装置的制造方法 Download PDF

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Publication number
CN100514592C
CN100514592C CNB2006800121033A CN200680012103A CN100514592C CN 100514592 C CN100514592 C CN 100514592C CN B2006800121033 A CNB2006800121033 A CN B2006800121033A CN 200680012103 A CN200680012103 A CN 200680012103A CN 100514592 C CN100514592 C CN 100514592C
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wire
lead
junction surface
semiconductor device
island
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CN101160649A (zh
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广本秀树
藤井贞雅
山口恒守
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Rohm Co Ltd
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Rohm Co Ltd
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Abstract

本发明目的在于提供一种能够可靠地防止在安装时等因热冲击或温度循环等而导致的引线接合到岛部的引线断线的情况，再有能够防止制造工序时间大幅增加的情况的半导体装置。本发明的半导体装置为，半导体芯片被芯片接合到岛部表面，第一引线的一端被引线接合到形成于半导体芯片的表面的电极而形成第一接合部，并且第一引线的另一端被引线接合到岛部而形成第二接合部，而且该半导体装置被树脂密封，其特征在于，在被引线接合到岛部上的第一引线的第二接合部上，设置有通过引线接合第二引线而所形成的双重接合部。

Description

半导体装置及半导体装置的制造方法
技术领域
本发明是以2005年4月15日申请的日本专利申请2005—118625号作为在先申请来主张优先权的申请。
本发明涉及半导体装置及半导体装置的制造方法。
背景技术
以往，在具有LSI等半导体芯片的半导体装置中存在一种将半导体芯片芯片接合(die bonding)到岛部(island)，并将形成于该半导体芯片上面的电极与岛部以引线(wire)连接的半导体装置。采用图6，对该半导体装置的制造工序的一部分即引线接合(wire bonding)所涉及的工序进行说明。
图6(a)～(d)是示意性表示现有的半导体装置的制造工序的一例的工序图。
首先，如图6(a)所示，将引线102***小直径管(capi1lary)101内，并且在其前端对置电焊焊枪(electric torch)103以使其与引线102之间放电，通过这样，加热、熔融引线102的前端来形成球部104。
接下来，如图6(b)所示，使小直径管101和形成有球部104的引线102下降，以使球部104与半导体芯片106上的电极105接触，并且由小直径管101将球部104挤压并接合到电极105，来形成第一接合部109(firstbonding)。在该工序中，由于半导体芯片106由加热模块(未图示)而加热，并且球部104被按压，因此球部104被热压接到电极105而成为压接球部104’。此时，也有由小直径管101进行按压的同时施加超声波的情况。
接下来，如图6(c)所示，小直径管101描绘着规定的轨迹在岛部108上移动下降。此时，岛部108由加热模块(未图示)而加热，并且第一引线102a的位于小直径管101下的部分通过小直径管101而被挤压到岛部108，因此第一引线102a热压接到岛部108上。
接下来，如图6(d)所示，由于夹持器(clamper)107夹持着引线102直接上升，因此引线102被切断，并形成第二接合部110，进而完成第一引线102a的布线。
这样，第一引线102a，一方面在第一接合部109中被球焊(ball bonding)到半导体芯片106的电极105，另一方面，在第二接合部110中被针脚式接合(stitch bonding)到岛部108。
图7是示意性表示通过上述制造工序制造出的半导体装置的纵剖面图。
如图7所示，半导体装置100具备：在表面形成有多个电极105的半导体芯片106；在表面接合有该半导体芯片106的岛部108；与岛部108隔开规定间隔而配设的多个引线端子111；将半导体芯片106上的电极105与岛部108电连接的第一引线102a；将电极105与引线端子111电连接的第一引线102b；以及，将这些构件密封的树脂封装部112。
另外，第一引线102a，一方面在第一接合部109中被球焊到半导体芯片106的电极105，另一方面，在第二接合部110中被针脚式接合到岛部108。
图7所示的半导体装置100例如通过回流焊(solder reflow)安装在印刷基板等上，但是在安装时如果例如由Cu合金构成的岛部108和由热硬化性的环氧树脂构成的树脂封装部112被加热，则由于各自以与固有的热膨胀系数相应的比率膨胀，因此会因岛部108与树脂封装部112之间的热膨胀系数的不同而导致在岛部108与树脂封装部112的界面产生相对滑动，第一引线102a断线的情况。
特别是在第二接合部110中第一引线102a与岛部108之间的连接是针脚式接合，而且其壁厚薄、接合强度小，因此很多情况下因第二接合部110产生裂缝，或者因第二接合部110从岛部108剥离，故而接合脱离而断线。
为了解决这种问题，以往存在一种例如具有在形成于岛部上的凸块上通过针脚式接合方式接合引线的结构的半导体装置(例如，参照专利文献1)。首先，采用图8、9，对该半导体装置的制造工序的一部分即引线接合所涉及的工序进行说明。
图8(a)～(c)及图9(a)～(c)是示意性表示现有的半导体装置的制造工序的其他一例的工序图。
图8(a)～(c)是示意性表示在岛部上形成凸块的工序的工序图；图9(a)～(d)是示意性表示对第一引线进行引线接合的工序的工序图。
首先，如图8(a)所示，将引线102***小直径管101内，并且在其前端对置电焊焊枪103以使其与引线102之间放电，通过这样，加热、熔融引线102的前端来形成球部104。
接下来，如图8(b)所示，使小直径管101下降，通过小直径管101将球部104挤压并接合到岛部128。在该工序中，由于岛部128由加热模块(未图示)而被加热，并且球部104被挤压到岛部128，因此球部104热压接到岛部128而成为压接球部104’。此时，也有由小直径管101进行按压的同时施加超声波的情况。
接下来，如图8(c)所示，夹持器107夹持引线102直接上升。由此，引线102在与压接球部104’的根部被切断，并且在岛部128上形成凸块134。
接下来，如图9(a)所示，将引线102***小直径管101，并且在其前端对置电焊焊枪103以使其与引线102之间放电，通过这样，加热、熔融引线102的前端来形成球部104。
接下来，如图9(b)所示，使小直径管101下降，由小直径管101将球部104挤压并接合到半导体芯片126上的电极125，来形成第一接合部129。在该工序中，由于半导体芯片126由加热模块(未图示)而加热，并且球部104被按压到电极125，因此球部104被热压接到电极125而成为压接球部104’。此时，也有由小直径管101进行按压的同时施加超声波的情况。
接下来，如图9(c)所示，小直径管101描绘着规定的轨迹在上面形成有凸块134的岛部108上移动下降。此时，岛部108由加热模块(未图示)而被加热，并且第一引线102c的位于小直径管101下的部分因小直径管101而被按压到岛部108上的凸块134，因此第一引线102c被热压接到在岛部108上的凸块。
接下来，如图9(d)所示，由于夹持器107夹持着引线102直接上升，因此引线102被切断，并形成第二接合部130，进而完成第一引线102c的布线。
在上述方法中，第一引线102c，在第一接合部129中被球焊到半导体芯片126的电极125上，另一方面，在第二接合部130中被针脚式接合到岛部128上的凸块134。
图10是示意性表示通过上述制造工序制造出的半导体装置的纵剖面图。
如图10所示，半导体装置120具备：在表面形成有多个电极125的半导体芯片126；在表面接合有该半导体芯片126的岛部128；与岛部108隔开规定间隔配设的多个引线端子131；将半导体芯片126上的电极125与岛部128电连接的第一引线102c；将电极125与引线端子131电连接的第一引线102d；以及，将这些构件密封的树脂封装部132。
第一引线102c，在第一接合部129中被球焊到半导体芯片126的电极125，另一方面，在第二接合部130中被针脚式接合到岛部128上的凸块134。
根据图10所示的半导体装置120，在第二接合部130中由于第一引线102c针脚式接合到与第一引线102c相同金属组成的凸块134，因此可使接合部分的壁厚增加凸块134的厚度。从而，在第二接合部130中的接合强度增大，不易发生第一引线102c的断线。
专利文献1：特开2003—309142号公报
但是，在专利文献1中所记载的半导体装置中，由于在形成凸块后引线接合装置的小直径管，从所形成的凸块的上方位置向半导体芯片的电极上方移动一次而进行第一接合，之后再次返回到凸块上方必须进行第二接合，因此有可能发生容易引起位置偏移、成品率差的问题。另外，还存在因在不同工序中形成凸块而导致制造工序时间增大的问题。
发明内容
本发明是鉴于上述课题而提出的，其目的在于提供一种能够可靠地防止例如在安装时因热冲击或温度循环(temperature cycle)等而导致引线接合到岛部的引线断线的情况，再有能够防止制造工序时间大幅增加的情况的半导体装置及半导体装置的制造方法。
为了解决上述课题，本发明提供如下的技术方案。
(1)一种半导体装置，半导体芯片被芯片接合到岛部表面，第一引线的一端被引线接合到形成于上述半导体芯片的表面的电极而形成第一接合部，并且上述第一引线的另一端被引线接合到上述岛部而形成第二接合部，而且该半导体装置被树脂密封，
在被引线接合到上述岛部上的上述第一引线的上述第二接合部上，设置有通过引线接合第二引线来形成的双重接合部，
所述双重接合部在所述岛部上，在引线接合装置的小直径管能够到达半导体芯片而不会接触到的范围内，靠近半导体芯片的位置形成。
根据技术方案(1)的发明，由于在接合到岛部的第一引线的第二接合部上，形成有引线接合第二引线的一端的双重接合部，因此作为第一引线与岛部之间的接合部的双重接合部的壁厚较厚。从而，能够使双重接合部对岛部的接合强度增大，不易发生第一引线的断线。
另外，根据(1)的发明，由于在岛部上进行引线接合的第二接合工序之后，采用执行在接合到上述岛部的第一引线的接合部上接合第二引线的一端的工序的制造方法进行制造，因此在岛部上引线接合第一引线来形成第二接合部后，引线接合装置的小直径管不会在X—Y方向上移动，而是作为自第二接合工序后的一系列工序在接合部上形成双重接合部，从而，在采用了上述制造方法的情况下，不易产生因X—Y方向的移动而导致的位置偏移，在第二接合部上能够可靠地形成双重接合部。
再有，由于在第二接合工序与双重接合工序之间小直径管不会在X—Y方向上移动，而且这些工序作为一系列的工序来进行，因此能够防止工序时间增大的情况。
再有，本发明提供如下的技术方案。
(2)上述(1)的半导体装置，其特征在于，
上述双重接合部通过球焊所形成。
根据技术方案(2)的发明，由于双重接合部通过球焊所形成，因此对岛部的接合强度大。进而，由于与岛部牢固地接合，因此能够更可靠地防止引线的断线。
再有，本发明提供如下的技术方案。
(3)一种半导体装置的制造方法，该半导体装置将被芯片接合到岛部的半导体芯片上的电极与上述岛部通过使用了引线接合装置的引线接合来连接，
该方法具有：
第一接合工序，将第一引线的一端引线接合到上述电极，形成第一接合部；
第二接合工序，将上述第一引线的另一端引线接合到上述岛部，形成第二接合部；和
双重接合工序，在被接合到上述岛部的上述第一引线的上述第二接合部上接合第二引线的一端，形成双重接合部，
所述双重接合部在所述岛部上，在引线接合装置的小直径管能够到达半导体芯片而不会接触到的范围内，靠近半导体芯片的位置形成。
根据技术方案(3)的发明，由于在通过第二接合工序接合到岛部的第一引线的第二接合部上，通过双重接合工序引线接合第二引线的一端来形成双重接合部，因此能够使作为第一引线与岛部之间的接合部的双重接合部的壁厚变厚。从而，双重接合部对岛部的接合强度增大，能够使第一引线的断线不易发生。
另外，在形成第二接合部的第二接合工序结束后只要让用于形成引线接合的小直径管一直向上升、再次下降，便能够对第二接合部进一步进行引线接合，以精度良好地形成双重接合部。
也就是说，由于在岛部进行引线接合来形成第二接合部的第二接合工序之后连续执行用于形成双重接合部的双重接合工序，因此在将第一引线引线接合到岛部来形成第二接合部后，引线接合装置的小直径管不会在X—Y方向上移动，而是作为自第二接合工序的一系列工序能够在第二接合部形成双重接合部。从而，不易产生因X—Y方向的移动而导致的位置偏移，能够在第二接合部可靠地形成双重接合部。
再有，由于在第二接合工序与双重接合工序之间小直径管不会在X—Y方向上移动，而是将这些工序作为一系列的工序来执行，因此能够防止工序时间增加的情况。
再有，本发明提供如下的技术方案。
(4)上述技术方案(3)的半导体装置的制造方法，其特征在于，
在上述双重接合工序中通过球焊形成上述双重接合部。
根据技术方案(4)的发明，由于通过接合强度大的球焊来形成双重接合部，因此能够形成更牢固的双重接合部。从而，能够更可靠地防止引线的断线。
发明效果
根据本发明，能够提供一种与采用不进行双重结合的结构的情况相比能够可靠地防止例如在安装时因热冲击或温度循环等而导致的引线接合到岛部的引线断线，再有能够防止制造工序时间大幅增加的半导体装置的制造方法，以及能够防止第一引线的断线的半导体装置。
附图说明
图1是示意性表示第一实施方式所涉及的半导体装置的一例的纵剖面图。
图2是示意性表示第一实施方式所涉及的半导体装置的制造工序的一例的工序图。
图3是示意性表示第一实施方式所涉及的半导体装置的制造工序的一例的工序图。
图4是示意性表示第二实施方式所涉及的半导体装置的制造工序的一例的工序图。
图5是示意性表示第二实施方式所涉及的半导体装置的制造工序的一例的工序图。
图6是示意性表示现有的半导体装置的制造工序的一例的工序图。
图7是示意性表示通过图6所示的制造工序制造出的半导体装置的纵剖面图。
图8是示意性表示现有的半导体装置的制造工序的其他一例的工序图。
图9是示意性表示现有的半导体装置的制造工序的其他一例的工序图。
图10是示意性表示通过图8及图9所示的制造工序制造出的半导体装置的纵剖面图。
符号说明：1—小直径管；2—引线；2a—第一引线；2b—第二引线；2c—第一引线；3—电焊焊枪；4、24—球部；4’—压接球部；5—电极；6一半导体芯片；7—夹持器；8—岛部；9—第一接合部；10—第二接合部；11—第二引线第二接合部；12—树脂封装部；13—引线端子；25—双重接合部；30—半导体装置。
具体实施方式
(第一实施方式)
图1是示意性表示本发明的第一实施方式所涉及的半导体装置的一例的剖面图。
如图1所示，半导体装置30具备：在表面形成有多个电极5的半导体芯片6；在表面接合有该半导体芯片6的岛部108；与岛部8隔开规定间隔而配设的多个引线端子13；将半导体芯片6上的电极5与岛部8电连接的第一引线2a；通过在第二接合部10(未图示)上进行球焊而所形成的双重接合部25；将双重接合部25作为一端的第二引线2b；将电极5与引线端子13电连接的第一引线2c；以及，将这些构件密封的树脂封装部12。
根据半导体装置30，由于在接合到岛部8的第一引线2a的第二接合部10上形成有引线接合了第二引线2b一端的双重接合部25，因此作为第一引线2a与岛部8之间的接合部的双重接合部25的壁厚较厚。从而，能够使双重接合部25与岛部8的接合强度增大，不易发生第一引线2a的断线。
另外，根据半导体装置30，由于在将第一引线2a引线接合到岛部8的第二接合工序之后，能够采用执行双重接合工序的制造工序进行制造，其中该双重接合工序即在接合到岛部8的第一引线2a的第二接合部10(未图示)上接合第二引线2b的一端而形成双重接合部25，因此在岛部8上引线接合第一引线2a来形成第二接合部10后，引线接合装置的小直径管1不会在X—Y方向上移动，而是在第二接合部10上能够形成双重接合部25。从而，在采用了上述方法的情况下，不易产生因X—Y方向的移动而导致的位置偏移，能够在第二接合部10上可靠地形成双重接合部25。
另外，根据半导体装置30，由于双重接合部25采用球焊而形成，因此与岛部8的接合强度大。从而，能够与岛部8牢固地接合，因此能够更可靠地防止第一引线2a的断线。
图2(a)～(d)及图3(a)～(d)是示意性表示上述半导体装置的制造工序的一部分即引线接合所涉及的工序的工序图。
首先，如图2(a)所示那样将引线2***小直径管1，并且在其前端对置电焊焊枪3以使其与引线2之间放电，通过这样加热、熔融引线2的前端来形成球部4。
接下来，如图2(b)所示，使小直径管1和形成有球部4的引线2下降，以使球部4与半导体芯片6上的电极5接触，并且由小直径管1将球部4挤压并接合到电极5，来形成第一接合部9。在该工序中，由于半导体芯片6由加热模块(未图示)而被加热，并且球部4被按压，因此球部4热压接到电极5而成为压接球部4’。此时，也有由小直径管1进行按压的同时施加超声波的情况。图2(b)所示的工序相当于本发明的第一接合工序。
接下来，如图2(c)所示，小直径管1描绘着规定的轨迹在岛部8上移动下降。此时，由于岛部8由加热模块(未图示)被加热，并且第一引线2a的位于小直径管1下的部分因小直径管1而被挤压到岛部8，因此第一引线2a被热压接到岛部8上。
接下来，如图2(d)所示，由于夹持器7夹持着引线2直接上升，因此引线2被切断，并形成第二接合部10，进而完成第一引线2a的布线。图2(c)、(d)所示的工序相当于本发明的第二接合工序。
这样，第一引线2a，在第一接合部9中被球焊到半导体芯片6的电极5，另一方面，在第二接合部10中被针脚式接合到岛部8。
接下来，如图3(a)所示，在***到小直径管1的引线2的前端对置电焊焊枪3使之与引线2之间放电，通过这样加热、熔融引线2的前端来形成球部24。
接下来，如图3(b)所示，使小直径管1和形成有球部24的引线2下降，以使球部24与岛部8上的第二接合部10接触，并且由小直径管1将球部24挤压并接合到第二接合部10，来形成双重接合部25。在该工序中，由于半导体芯片6由加热模块(未图示)而被加热，并且球部24被按压到第二接合部10，因此球部24被热压接到第二接合部10而形成双重接合部25。此时，也有由小直径管1进行按压的同时施加超声波的情况。图3(b)所示的工序相当于本发明的双重接合工序。
该双重接合工序是在第二接合工序后作为一系列的工序来进行，且引线接合装置的小直径管不会在X—Y方向上移动。
这样，能够在针脚式接合到岛部8的壁厚薄且接合强度小的第二接合部10上球焊第二引线2b，来形成壁厚厚且接合强度大的双重接合部25。
本发明中，双重接合部是指，对接合到岛部上的第一引线的第二接合部进一步进行引线接合，从而一体接合到岛部的接合部。
接下来，如图3(c)所示，小直径管101描绘着规定的轨迹在与双重接合部25不同的岛部8上其他位置(在图中，双重接合部25的右方向)上移动下降。此时，由于岛部8由加热模块(未图示)而被加热，并且第二引线2b的轴方向侧面被按压到岛部8，因此第二引线2b被热压接在岛部8上。
接下来，如图3(d)所示，由于夹持器7夹持着引线2直接上升，因此引线2被切断，并形成第二引线第二接合部11，进而完成第二引线2b的布线。
根据第一实施方式所涉及的半导体装置的制造方法，由于在通过第二接合工序接合到岛部8的第一引线2a的第二接合部10上，通过双重接合工序引线接合第二引线2b的一端来形成双重接合部25，因此能够使作为第一引线2a与岛部8之间的接合部的双重接合部25的壁厚变厚。从而，能够使双重接合部25与岛部8之间的接合强度增大，不易发生第一引线的断线。
另外，在形成第二接合部10的第二接合工序结束后只要让用于形成引线接合的小直径管1一直上升，并使之再次下降，便可以对第二接合部10进一步进行引线接合，从而精度良好地形成双重接合部25。
也就是说，由于随着在岛部8上进行引线接合形成第二接合部10的第二接合工序之后连续执行用于形成双重接合部25的双重接合工序，因此在将第一引线2a引线接合到岛部8来形成第二接合部10后，引线接合装置的小直径管1不会在X—Y方向上移动，而是作为自第二接合工序之后的一系列工序能够在第二接合部10形成双重接合部25。从而，不易产生因X—Y方向的移动而导致的位置偏移，能够在第二接合部10可靠地形成双重接合部25。
再有，由于在第二接合工序与双重接合工序之间小直径管1不会在X—Y方向上移动，而是将这些工序作为一系列工序来执行，因此能够防止工序时间增大的情况。
另外，由于通过接合强度大的球焊来形成双重接合部25，因此能够形成更牢固的双重接合部25。从而，能够更可靠地防止第一引线2a的断线。
虽然在第一实施方式中，针对形成第二引线第二接合部的情况进行了说明，但是本发明中也可不形成第二引线第二接合部。
(第二实施方式)
第二实施方式所涉及的半导体装置，除了不存在第二引线，并且未形成第二引线第二接合部之外，其他构成与第一实施方式所涉及的半导体装置的构成大致相同，因此，对其构成省略说明。在此，对引线接合所涉及的工序进行说明。另外，有关与第一实施方式所涉及的半导体装置对应的构成要素标注同一符号进行说明。
图4(a)～(d)及图5(a)～(d)是示意性表示本发明的第二实施方式所涉及的半导体装置的制造工序的一部分即引线接合所涉及的工序的工序图。
首先，如图4(a)所示那样将引线2***小直径管1，并且在其前端对置电焊焊枪3以使之与引线2之间放电，通过这样加热、熔融引线2的前端来形成球部4。
接下来，如图4(b)所示，使小直径管1和形成有球部4的引线2下降，以使球部4与半导体芯片6上的电极5接触，并且由小直径管1将球部4挤压接合到电极5，来形成第一接合部9。在该工序中，由于半导体芯片6由加热模块(未图示)而被加热，并且球部4被按压，因此球部4热压接到电极5而成为压接球部4’。此时，也有由小直径管1进行按压的同时施加超声波的情况。图4(b)所示的工序相当于本发明的第一接合工序。
接下来，如图4(c)所示，小直径管1描绘着规定的轨迹在岛部8上移动下降。此时，由于岛部8由加热模块(未图示)被加热，并且第一引线2a的位于小直径管1下的部分被小直径管1挤压到岛部8，因此第一引线2a被热压接到岛部8上。
接下来，如图4(d)所示，由于夹持器7夹持着引线2直接上升，因此引线2被切断，并形成第二接合部10，进而完成第一引线2a的布线。图4(c)、(d)所示的工序相当于本发明的第二接合工序。
这样，第一引线2a，在第一接合部9中被球焊到半导体芯片6的电极5，另一方面，在第二接合部10中被针脚式接合到岛部8。
接下来，如图5(a)所示，在***到小直径管1的引线2的前端对置电焊焊枪3以使其与引线2之间放电，通过这样加热、熔融引线2的前端来形成球部34。
接下来，如图5(b)所示，使小直径管1和形成有球部34的引线2下降，以使球部34与岛部8上的第二接合部10接触，并且由小直径管1将球部34挤压并接合到第二接合部10，来形成双重接合部25。在该工序中，由于半导体芯片6由加热模块(未图示)而被加热，并且球部34被挤压到第二接合部10，因此球部34热压接到第二接合部10而形成双重接合部25。此时，也有由小直径管1进行按压的同时施加超声波的情况。图5(b)所示的工序相当于本发明的双重接合工序。
该双重接合工序是在第二接合工序之后作为一系列的工序来执行的，且引线接合装置的小直径管不会在X—Y方向上移动。
这样，能够在针脚式接合到岛部8的壁厚薄且接合强度小的第二接合部10上球焊第二引线2b，来形成壁厚厚且接合强度大的双重接合部25。此外，到此为止的工序是与第一实施方式所涉及的制造工序同样的工序。
接下来，如图5(c)所示，由于夹持器7夹持着引线2直接上升。由此，引线2在与双重接合部25的根部被切断。
这样，在本发明中也可以在形成双重接合部25后，使引线接合装置的夹持器7夹持着引线2直接上升并切断引线2，而不形成第二引线第二接合部。此外，当采用第二实施方式所涉及的制造工序时，因条件不同会将双重接合部往上拉拨，有可能降低接合强度，因此优选尽量在往上拉拨的力变弱的条件下切断引线。
在本发明中，对形成于岛部上的双重接合部的位置没有特别限定，但是优选在引线接合装置的小直径管可到达半导体芯片而不会接触到的范围内，靠近半导体芯片。这是因为，越是靠近半导体芯片的岛部上的区域，因岛部与树脂封装部之间的热膨胀所引起的变化量之差越小，因此在界面的相对滑动越小，且不易发生第一引线的断线。
本发明中，形成于第二接合部上的双重接合部，只要至少形成在第二接合部的一部分之上即可。这是因为，通过在第二接合部的一部分之上形成双重接合部，便能够使第一引线对岛部的接合强度增大。
再有，双重接合部也可形成在第一引线的一部分(例如，第二接合部附近的第一引线)，而不是第二接合部上。这是因为，如果在第一引线的一部分形成双重接合部，则能够将第一引线牢固地接合到岛部，并且能够使第一引线对岛部的接合强度增大。
本发明中，虽然双重接合部与岛部的接合面积为与第一接合部相同程度也就是与球部的大小相同程度，但是例如也可采用大直径的引线，使球部尺寸增大，来加宽通过球焊形成的双重接合部的面积。这是因为，通过在宽面积下与岛部接合，从而能够增大接合强度。
本发明中，虽然对第二引线第二接合部的位置没有特别限定，但是优选在双重接合部的附近。这是因为，如果在双重接合部的附近，则引线接合装置的小直径管的移动距离会减少，不增加工序时间。另外，第二引线越短越能够实现成本削减。
本发明中，虽然对第二引线的弯曲形状没有特别限定，但是优选为相对于岛部平面大致水平地延长的弯曲形状。尤其，优选第二引线的顶部比第一引线的弯曲形状的顶部低。这是因为，由于第二引线的顶部越低，能够使半导体装置上面的树脂封装部的厚度变得越薄，因此可得到薄型的模型封装(mould package)。
本实施方式中，对电连接半导体芯片与岛部的半导体装置的制造方法进行了说明，但是本发明所涉及的半导体装置的制造方法不限于此例，也能够用于例如连接半导体芯片与引线端子的情况、将接合到岛部上的其他元件(例如光元件)等与岛部或者引线端子连接的情况。
作为在形成树脂封装部时所使用的树脂没有特别限定，例如能够举出作为树脂主成分的热硬化性的环氧树脂、作为硬化剂成分的酚醛(phenol)树脂、含有无机填充剂的树脂组成物。另外，作为上述树脂主成分，除环氧树脂之外，还可以采用PPS(聚苯硫醚：polyphenylene sulfide)树脂、PPE(聚苯醚：polyphenylene ether)树脂等耐热性的热可塑性树脂。另外，作为上述无机填充剂没有特别限定，能够举出石英玻璃、结晶性二氧化硅(silica)、熔融二氧化硅等。
作为在本发明中所采用的引线没有特别限定，能够举出金(Au)、铝(Al)、铜(Cu)、铂(Pt)、钯(Pd)、银(Ag)、以及金合金、铝合金、铜合金、铂合金、钯合金、银合金等。
以上，对本发明所涉及的半导体装置及半导体装置的制造方法的实施方式进行了说明，然而本发明的半导体装置及半导体装置的制造方法并不限于上述例子，在满足本发明的结构的范围内，还能够进行适当的设计变更。

Claims (5)

1、一种半导体装置，半导体芯片被芯片接合到岛部表面，第一引线的一端被引线接合到形成于上述半导体芯片的表面的电极而形成第一接合部，并且上述第一引线的另一端被引线接合到上述岛部而形成第二接合部，而且该半导体装置被树脂密封，
在被引线接合到上述岛部上的上述第一引线的上述第二接合部上，设置有通过引线接合第二引线来形成的双重接合部，
所述双重接合部在所述岛部上，在引线接合装置的小直径管能够到达半导体芯片而不会接触到的范围内，靠近半导体芯片的位置形成。
2、根据权利要求1所述的半导体装置，其特征在于，
上述双重接合部通过球焊所形成。
3、根据权利要求1所述的半导体装置，其特征在于，
所述双重接合部比所述第一接合部面积大。
4、根据权利要求1所述的半导体装置，其特征在于，
通过将从所述双重接合部延伸的所述第二引线的端部引线连接于所述岛部，形成第二引线第二接合部，
所述第二引线第二接合部，在所述岛部上，在所述双重接合部的附近形成。
5、一种半导体装置的制造方法，该半导体装置，将被芯片接合到岛部的半导体芯片上的电极与上述岛部通过使用了引线接合装置的引线接合来连接，
该方法具备：
第一接合工序，将第一引线的一端引线接合到上述电极，形成第一接合部；
第二接合工序，将上述第一引线的另一端引线接合到上述岛部，形成第二接合部；和
双重接合工序，在被接合到上述岛部的上述第一引线的上述第二接合部上接合第二引线的一端，形成双重接合部，
所述双重接合部在所述岛部上，在引线接合装置的小直径管能够到达半导体芯片而不会接触到的范围内，靠近半导体芯片的位置形成。
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