JP4953569B2 - 薄膜磁気抵抗素子並びに薄膜磁気抵抗素子を用いた磁気センサ - Google Patents
薄膜磁気抵抗素子並びに薄膜磁気抵抗素子を用いた磁気センサ Download PDFInfo
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- JP4953569B2 JP4953569B2 JP2004344430A JP2004344430A JP4953569B2 JP 4953569 B2 JP4953569 B2 JP 4953569B2 JP 2004344430 A JP2004344430 A JP 2004344430A JP 2004344430 A JP2004344430 A JP 2004344430A JP 4953569 B2 JP4953569 B2 JP 4953569B2
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- film
- soft magnetic
- thin film
- giant magnetoresistive
- magnetic film
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- 230000005291 magnetic effect Effects 0.000 title claims description 396
- 239000010409 thin film Substances 0.000 title claims description 270
- 239000010408 film Substances 0.000 claims description 371
- 239000000758 substrate Substances 0.000 claims description 45
- 238000001514 detection method Methods 0.000 claims description 8
- 239000010419 fine particle Substances 0.000 claims description 3
- 239000012212 insulator Substances 0.000 claims description 3
- 230000005294 ferromagnetic effect Effects 0.000 claims description 2
- 239000011159 matrix material Substances 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 34
- 238000000034 method Methods 0.000 description 33
- 230000035945 sensitivity Effects 0.000 description 22
- 238000004519 manufacturing process Methods 0.000 description 21
- 230000004907 flux Effects 0.000 description 18
- 238000004544 sputter deposition Methods 0.000 description 16
- 238000005530 etching Methods 0.000 description 13
- 230000000694 effects Effects 0.000 description 12
- 238000000992 sputter etching Methods 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000006185 dispersion Substances 0.000 description 6
- 230000001105 regulatory effect Effects 0.000 description 5
- 230000005389 magnetism Effects 0.000 description 4
- 229910000889 permalloy Inorganic materials 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
Description
この式から明らかなように、ブリッジ回路の出力電圧Voutは、各素子の抵抗値R1,R2,R3,R4と入力電圧Vinとによってのみ定まり、且つ平衡状態においては出力電圧Voutが零になるので、電源電圧の変動それに検出器の入力インピーダンスや非直線性などに依存しない高精度の磁界検出が可能になり、実用性の高い磁気センサとすることができる。
2 絶縁基板
3 第1軟磁性膜
4 第1軟磁性膜
5 非磁性絶縁膜
6 巨大磁気抵抗薄膜
11 第3の軟磁性膜
21 磁気センサ
22 固定抵抗素子
23 端子
Claims (4)
- 巨大磁気抵抗薄膜と、当該巨大磁気抵抗薄膜を介して一端が電気的及び磁気的に接続された第1及び第2の軟磁性膜と、前記第1軟磁性膜及び前記第2軟磁性膜のうちの少なくとも一方と前記巨大磁気抵抗薄膜との間に介在する非磁性絶縁膜とを有し、前記第1及び第2の軟磁性膜に信号検出用の端子部が設けられた薄膜磁気抵抗素子において、
絶縁基板上に形成された前記第1軟磁性膜の上面に前記非磁性絶縁膜を形成し、当該非磁性絶縁膜の上面及び端面並びに前記第1軟磁性膜の端面に前記巨大磁気抵抗薄膜を形成すると共に、一端が前記巨大磁気抵抗薄膜に接するように前記絶縁基板上に前記非磁性絶縁膜を形成し、当該非磁性絶縁膜の上面に一端が前記非磁性絶縁膜の端面及び前記第1軟磁性膜の端面に形成された前記巨大磁気抵抗薄膜と接するように前記第2軟磁性膜を形成し、前記非磁性絶縁膜により前記巨大磁気抵抗薄膜を介して前記第1軟磁性膜から前記第2軟磁性膜に至る電路及び磁路を前記第1軟磁性膜と前記第2軟磁性膜の配列方向にのみ規制したことを特徴とする薄膜磁気抵抗素子。 - 前記巨大磁気抵抗薄膜が、絶縁体マトリクス中に強磁性微粒子を分散してなるグラニュラー磁性膜をもって形成されていることを特徴とする請求項1に記載の薄膜磁気抵抗素子。
- 前記第1軟磁性膜と前記第2軟磁性膜との間に形成される前記巨大磁気抵抗薄膜の膜厚が0.05μm以上1.0μm未満であることを特徴とする請求項1に記載の薄膜磁気抵抗素子。
- 巨大磁気抵抗薄膜と、当該巨大磁気抵抗薄膜を介して一端が電気的及び磁気的に接続された第1及び第2の軟磁性膜と、前記第1軟磁性膜及び前記第2軟磁性膜のうちの少なくとも一方と前記巨大磁気抵抗薄膜との間に介在する非磁性絶縁膜とを有し、前記第1及び第2の軟磁性膜に信号検出用の端子部が設けられた薄膜磁気抵抗素子であって、絶縁基板上に形成された前記第1軟磁性膜の上面に前記非磁性絶縁膜を形成し、当該非磁性絶縁膜の上面及び端面並びに前記第1軟磁性膜の端面に前記巨大磁気抵抗薄膜を形成すると共に、一端が前記巨大磁気抵抗薄膜に接するように前記絶縁基板上に前記非磁性絶縁膜を形成し、当該非磁性絶縁膜の上面に一端が前記非磁性絶縁膜の端面及び前記第1軟磁性膜の端面に形成された前記巨大磁気抵抗薄膜と接するように前記第2軟磁性膜を形成し、前記非磁性絶縁膜により前記巨大磁気抵抗薄膜を介して前記第1軟磁性膜から前記第2軟磁性膜に至る電路及び磁路を前記第1軟磁性膜と前記第2軟磁性膜の配列方向にのみ規制してなる2個の薄膜磁気抵抗素子を対向する2辺に備え、他の対向する2辺に固定抵抗素子を備えたブリッジ回路からなることを特徴とする薄膜磁気抵抗素子を用いた磁気センサ。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004344430A JP4953569B2 (ja) | 2004-11-29 | 2004-11-29 | 薄膜磁気抵抗素子並びに薄膜磁気抵抗素子を用いた磁気センサ |
PCT/JP2005/021767 WO2006057379A1 (ja) | 2004-11-29 | 2005-11-28 | 薄膜磁気抵抗素子及びその製造方法並びに薄膜磁気抵抗素子を用いた磁気センサ |
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JP2004344430A JP4953569B2 (ja) | 2004-11-29 | 2004-11-29 | 薄膜磁気抵抗素子並びに薄膜磁気抵抗素子を用いた磁気センサ |
Publications (3)
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JP2006156661A JP2006156661A (ja) | 2006-06-15 |
JP2006156661A5 JP2006156661A5 (ja) | 2007-03-08 |
JP4953569B2 true JP4953569B2 (ja) | 2012-06-13 |
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JP (1) | JP4953569B2 (ja) |
WO (1) | WO2006057379A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2008108387A1 (ja) * | 2007-03-06 | 2008-09-12 | Alps Electric Co., Ltd. | 多感度軸を持つ磁気センサ装置 |
JP5066576B2 (ja) * | 2007-10-11 | 2012-11-07 | アルプス電気株式会社 | 磁気検出装置 |
EP2343566A4 (en) | 2008-09-29 | 2014-04-16 | Omron Tateisi Electronics Co | MAGNETIC FIELD DETECTION ELEMENT AND SIGNAL TRANSMISSION ELEMENT |
WO2011089978A1 (ja) * | 2010-01-20 | 2011-07-28 | アルプス電気株式会社 | 磁気センサ |
JP6418268B2 (ja) * | 2017-03-27 | 2018-11-07 | Tdk株式会社 | 磁場検出装置 |
US11782104B2 (en) | 2017-03-27 | 2023-10-10 | Tdk Corporation | Magnetic field detection device |
JP2020118469A (ja) * | 2019-01-18 | 2020-08-06 | 艾礼富▲電▼子(深▲セン▼)有限公司Aleph Electronics(Shenzhen)Co.,Ltd | ホール素子又はホールicを用いた磁界検出装置及び磁界検出装置を用いた近接センサ |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH03263385A (ja) * | 1990-03-13 | 1991-11-22 | Sankyo Seiki Mfg Co Ltd | 磁気センサ |
JP3455055B2 (ja) * | 1997-05-09 | 2003-10-06 | 株式会社東芝 | 磁気素子とそれを用いた磁気ヘッドおよび磁気記憶装置 |
JP3640230B2 (ja) * | 1997-09-04 | 2005-04-20 | 財団法人電気磁気材料研究所 | 薄膜磁界センサ |
JP3466470B2 (ja) * | 1998-03-18 | 2003-11-10 | 財団法人電気磁気材料研究所 | 薄膜磁気抵抗素子 |
JP3697369B2 (ja) * | 1998-09-14 | 2005-09-21 | 株式会社東芝 | 磁気素子、磁気メモリ装置、磁気抵抗効果ヘッド、磁気ヘッドジンバルアッセンブリ、及び磁気記録システム |
JP2001101626A (ja) * | 1999-09-29 | 2001-04-13 | Sony Corp | 磁気抵抗効果素子及びその製造方法 |
JP3612479B2 (ja) * | 2000-09-29 | 2005-01-19 | 株式会社日立グローバルストレージテクノロジーズ | 磁気抵抗効果型薄膜磁気ヘッドの製造方法 |
JP2002245607A (ja) * | 2000-12-14 | 2002-08-30 | Hitachi Ltd | 磁気抵抗効果型ヘッド |
JP3807254B2 (ja) * | 2001-05-30 | 2006-08-09 | ソニー株式会社 | 磁気抵抗効果素子、磁気抵抗効果型磁気センサ、および磁気抵抗効果型磁気ヘッド |
JP3937388B2 (ja) * | 2001-08-10 | 2007-06-27 | 富士通株式会社 | 磁気センサ及び磁気ヘッド |
JP2003179283A (ja) * | 2001-12-12 | 2003-06-27 | Tokai Rika Co Ltd | 磁気センサ |
JP3838549B2 (ja) * | 2001-12-21 | 2006-10-25 | Tdk株式会社 | 磁気抵抗効果素子、薄膜磁気ヘッド、磁気ヘッド装置及び磁気記録再生装置 |
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- 2004-11-29 JP JP2004344430A patent/JP4953569B2/ja not_active Expired - Fee Related
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2005
- 2005-11-28 WO PCT/JP2005/021767 patent/WO2006057379A1/ja active Application Filing
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JP2006156661A (ja) | 2006-06-15 |
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