JP4944145B2 - 圧電薄膜共振子、フィルタ、通信モジュール、通信装置 - Google Patents
圧電薄膜共振子、フィルタ、通信モジュール、通信装置 Download PDFInfo
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 9
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- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
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- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
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- 239000007772 electrode material Substances 0.000 description 1
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- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
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- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/60—Electric coupling means therefor
- H03H9/605—Electric coupling means therefor consisting of a ladder configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/703—Networks using bulk acoustic wave devices
- H03H9/706—Duplexers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
- Y10T29/49156—Manufacturing circuit on or in base with selective destruction of conductive paths
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
〔1.圧電薄膜共振子の構成〕
図2Aは、実施の形態にかかる圧電薄膜共振子の平面図である。図1Bは、図1AにおけるZ−Z部の断面図である。圧電薄膜共振子は、基板1、上部電極2、下部電極3、圧電膜4を備えている。下部電極3は、基板1の表面に配されている。圧電膜4は、基板1及び下部電極3の上部に配されている。上部電極2は、圧電膜4の上部に配されている。圧電膜4は、上部電極2と下部電極3とに挟持されている。上部電極2と下部電極3とは、少なくとも一部が対向するように配され、その対向領域が共振部R1である。共振部R1は、図2Aに示すように平面形状が方形である。基板1における共振部R1の下方には、空隙5が形成されている。
(実施例1)
以下、SiO2膜を用いて上部電極2を成膜する製造方法について説明する。
以下、フォトレジストを用いて上部電極2を成膜する製造方法について説明する。
図9は、実施の形態にかかる圧電薄膜共振子を用いたフィルタの平面図である。図9に示すフィルタは、直列腕共振子S1〜S4および並列腕共振子P1〜P3を、梯子形に接続したラダー型フィルタである。直列腕共振子S1〜S4および並列腕共振子P1〜P3が、実施の形態にかかる圧電薄膜共振子で構成されている。圧電薄膜共振子は、基板21、上部電極22a〜22c、下部電極23a〜23e、圧電膜24a〜24c、バンプパッド部25a〜25eを備えている。図9において、ドットハッチングを付している領域が共振部に相当し、直列腕共振子S1〜S4および並列腕共振子P1〜P3に相当する。直列腕共振子S1〜S4および並列腕共振子P1〜P3における共振部の形状は、楕円形状とした。
図10は、本実施の形態にかかる圧電薄膜共振子またはフィルタを備えた通信モジュールの一例を示す。図10に示すように、デュープレクサ62は、受信フィルタ62aと送信フィルタ62bとを備えている。また、受信フィルタ62aには、例えばバランス出力に対応した受信端子63a及び63bが接続されている。また、送信フィルタ62bは、パワーアンプ64を介して送信端子65に接続している。ここで、デュープレクサ62には、本実施の形態にかかる圧電薄膜共振子またはフィルタを備えたデュープレクサで実現することができる。
図11は、本実施の形態にかかる圧電薄膜共振子、フィルタ、デュープレクサ、または前述の通信モジュールを備えた通信装置の一例として、携帯電話端末のRFブロックを示す。また、図11に示す構成は、GSM(Global System for Mobile Communications)通信方式及びW−CDMA(Wideband Code Division Multiple Access)通信方式に対応した携帯電話端末の構成を示す。また、本実施の形態におけるGSM通信方式は、850MHz帯、950MHz帯、1.8GHz帯、1.9GHz帯に対応している。また、携帯電話端末は、図10に示す構成以外にマイクロホン、スピーカー、液晶ディスプレイなどを備えているが、本実施の形態における説明では不要であるため図示を省略した。ここで、デュープレクサ73は、本実施の形態にかかる圧電薄膜共振子を備えたデュープレクサで実現することができる。
本実施の形態の圧電薄膜共振子は、上部電極2の端部2aを圧電膜4の端部4aから突出した庇状とし、端部2aの下端2bを圧電膜4の端部4aと一致または近傍に配置した。また、端部2aと上部電極2の上面との角度を90度以上とした。これにより、圧電膜4内を伝搬する弾性波を閉じこめることができ、損失を低下させることができるとともにQ値を向上させることができる。また、庇状の端部2aを延伸することができるので、さらにQ値を高めることができる。
2 上部電極
2a 端部
3 下部電極
4 圧電膜
Claims (8)
- 基板と、
前記基板上に設けられた下部電極と、
前記下部電極上に設けられた圧電膜と、
前記圧電膜を挟み、前記下部電極と対向する部分を有するように圧電膜上に設けられた上部電極と、を備えた圧電薄膜共振子であって、
前記上部電極の外周部の少なくとも一部が、前記圧電膜の端部から庇状に突出し、かつ、逆テーパ形状である、圧電薄膜共振子。 - 前記上部電極の前記外周部は、前記圧電膜の外周部の少なくとも一部と一致または近傍配置する、請求項1記載の圧電薄膜共振子。
- 前記上部電極と前記下部電極とが対向する領域は、楕円形である、請求項1または2記載の圧電薄膜共振子。
- 前記上部電極と前記下部電極とが対向する領域は、平行な二辺を含まない多角形である、請求項1または2記載の圧電薄膜共振子。
- 請求項1〜4のうちいずれか一項に記載の圧電薄膜共振子を備えた、フィルタ。
- 請求項1〜4のうちいずれか一項に記載の圧電薄膜共振子、または請求項5に記載のフィルタを備えた通信モジュール。
- 請求項1〜4のうちいずれか一項に記載の圧電薄膜共振子、請求項5に記載のフィルタ、または請求項6に記載の通信モジュールを備えた、通信装置。
- 基板上に下部電極をパターン形成する工程と、
前記基板および前記下部電極上に圧電膜を形成する工程と、
前記圧電膜上の一部の領域に犠牲層を形成する工程と、
前記犠牲層をパターニングする工程と、
前記圧電膜上に上部電極を形成する工程と、
前記圧電膜上に形成された前記犠牲層を除去する工程と、
前記圧電膜をパターニングする工程とを含み、
前記犠牲層をパターニングする工程において、前記犠牲層における前記上部電極の外周部と接する部分がテーパ状になるようにパターニングする、圧電薄膜共振子の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2009068019A JP4944145B2 (ja) | 2009-03-19 | 2009-03-19 | 圧電薄膜共振子、フィルタ、通信モジュール、通信装置 |
US12/627,412 US8240015B2 (en) | 2009-03-19 | 2009-11-30 | Method of manufacturing thin film resonator |
CN2009102610580A CN101841313B (zh) | 2009-03-19 | 2009-12-17 | 压电薄膜谐振器、滤波器、通信模块和通信装置 |
KR1020090127064A KR101377363B1 (ko) | 2009-03-19 | 2009-12-18 | 압전 박막 공진자, 필터, 통신 모듈, 통신 장치 |
US13/528,445 US9240769B2 (en) | 2009-03-19 | 2012-06-20 | Piezoelectric thin film resonator, filter, communication module and communication device |
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JP2009068019A JP4944145B2 (ja) | 2009-03-19 | 2009-03-19 | 圧電薄膜共振子、フィルタ、通信モジュール、通信装置 |
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JP2010226171A JP2010226171A (ja) | 2010-10-07 |
JP4944145B2 true JP4944145B2 (ja) | 2012-05-30 |
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JP2009068019A Active JP4944145B2 (ja) | 2009-03-19 | 2009-03-19 | 圧電薄膜共振子、フィルタ、通信モジュール、通信装置 |
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US (2) | US8240015B2 (ja) |
JP (1) | JP4944145B2 (ja) |
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JPS5923612A (ja) * | 1982-07-29 | 1984-02-07 | Murata Mfg Co Ltd | 圧電共振子の製造方法 |
JP2003229743A (ja) * | 2001-11-29 | 2003-08-15 | Murata Mfg Co Ltd | 圧電フィルタ、通信装置および圧電フィルタの製造方法 |
JP4024741B2 (ja) * | 2003-10-20 | 2007-12-19 | 富士通メディアデバイス株式会社 | 圧電薄膜共振子及びフィルタ |
JP4535841B2 (ja) * | 2004-10-28 | 2010-09-01 | 富士通メディアデバイス株式会社 | 圧電薄膜共振子及びこれを用いたフィルタ |
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JP4149444B2 (ja) | 2005-01-12 | 2008-09-10 | 富士通メディアデバイス株式会社 | 圧電薄膜共振子及びこれを用いたフィルタ |
GB0505826D0 (en) * | 2005-03-22 | 2005-04-27 | Uni Microelektronica Ct Vsw | Methods for embedding of conducting material and devices resulting from said methods |
JP4435049B2 (ja) * | 2005-08-08 | 2010-03-17 | 株式会社東芝 | 薄膜圧電共振器及びその製造方法 |
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WO2009157930A1 (en) * | 2008-06-26 | 2009-12-30 | Michelin Recherche Et Technique, S.A. | Sandwich piezoelectric device with solid copper electrode |
JP5202252B2 (ja) * | 2008-11-27 | 2013-06-05 | 京セラ株式会社 | 音響波共振子 |
JP4944145B2 (ja) | 2009-03-19 | 2012-05-30 | 太陽誘電株式会社 | 圧電薄膜共振子、フィルタ、通信モジュール、通信装置 |
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2009
- 2009-03-19 JP JP2009068019A patent/JP4944145B2/ja active Active
- 2009-11-30 US US12/627,412 patent/US8240015B2/en active Active
- 2009-12-17 CN CN2009102610580A patent/CN101841313B/zh not_active Expired - Fee Related
- 2009-12-18 KR KR1020090127064A patent/KR101377363B1/ko active IP Right Grant
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106169916A (zh) * | 2015-05-21 | 2016-11-30 | 三星电机株式会社 | 谐振器封装件及其制造方法 |
CN106169916B (zh) * | 2015-05-21 | 2020-11-17 | 三星电机株式会社 | 谐振器封装件及其制造方法 |
US10756702B2 (en) | 2018-06-15 | 2020-08-25 | Samsung Electro-Mechanics Co., Ltd. | Acoustic resonator and acoustic resonator filter including the same |
Also Published As
Publication number | Publication date |
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US9240769B2 (en) | 2016-01-19 |
US8240015B2 (en) | 2012-08-14 |
US20100237750A1 (en) | 2010-09-23 |
CN101841313A (zh) | 2010-09-22 |
JP2010226171A (ja) | 2010-10-07 |
KR101377363B1 (ko) | 2014-03-21 |
US20120256706A1 (en) | 2012-10-11 |
CN101841313B (zh) | 2013-06-19 |
KR20100105344A (ko) | 2010-09-29 |
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