JP6757594B2 - 圧電薄膜共振器、フィルタおよびマルチプレクサ - Google Patents
圧電薄膜共振器、フィルタおよびマルチプレクサ Download PDFInfo
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- 238000004544 sputter deposition Methods 0.000 description 9
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 7
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- 238000007740 vapor deposition Methods 0.000 description 7
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- 238000010586 diagram Methods 0.000 description 6
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- 229910052581 Si3N4 Inorganic materials 0.000 description 4
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910052703 rhodium Inorganic materials 0.000 description 3
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- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
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- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
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- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
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- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
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- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
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- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
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- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
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- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/131—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/564—Monolithic crystal filters implemented with thin-film techniques
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/566—Electric coupling means therefor
- H03H9/568—Electric coupling means therefor consisting of a ladder configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
12 下部電極
14 圧電膜
16 上部電極
18 積層膜
25 厚膜部
26 薄膜部
27a、27b 金属膜
28 追加膜
29 挿入膜
30 空隙
42 送信フィルタ
44 受信フィルタ
50 共振領域
52 外周領域
54 中央領域
60 中心
60a 短軸
60b 長軸
61、63 引き出し領域
64a、64b 辺
65a、65b 中点
66a、66b、67a、67b 直線
74 亀裂
Claims (12)
- 基板と、
前記基板上に設けられた圧電膜と、
前記基板上に空隙を介し設けられ、前記圧電膜と接し、前記空隙から前記圧電膜と接する面までの距離が一定である薄膜部と、前記空隙から前記圧電膜と接する面までの距離が一定でありかつ前記薄膜部の前記空隙から前記圧電膜と接する面までの距離より大きい厚膜部とを有する下部電極と、
前記圧電膜の前記下部電極が接する面とは反対の面に設けられた上部電極と、
を具備し、
前記圧電膜の少なくとも一部を挟み前記下部電極と前記上部電極とが対向しかつ前記空隙と重なる領域で定義される共振領域内に前記薄膜部および前記厚膜部が設けられ、前記厚膜部は少なくとも前記共振領域の重心を含み、
前記圧電膜の少なくとも一部を挟み前記薄膜部と対向する上部電極と、前記圧電膜の少なくとも一部を挟み前記厚膜部と対向する上部電極と、は単一の上部電極であり互いに電気的に接続されている圧電薄膜共振器。 - 前記厚膜部は、前記共振領域の重心と、前記下部電極および前記上部電極が前記共振領域から引き出される引き出し領域と、を結ぶ線分を含む帯状に設けられ、
前記薄膜部は、前記帯状の幅方向の前記厚膜部の両側の前記共振領域内に少なくとも設けられている請求項1記載の圧電薄膜共振器。 - 前記厚膜部は、前記共振領域の重心と、前記下部電極が前記共振領域から引き出される引き出し領域と、を結ぶ線分を含む帯状に設けられ、
前記薄膜部は、前記帯状の幅方向の前記厚膜部の両側の前記共振領域内に少なくとも設けられている請求項1記載の圧電薄膜共振器。 - 前記共振領域は楕円形状であり、前記厚膜部は前記楕円形状の短軸を含む帯状に設けられ、
前記薄膜部は、前記帯状の幅方向の前記厚膜部の両側の前記共振領域内に少なくとも設けられている請求項1から3のいずれか一項記載の圧電薄膜共振器。 - 前記共振領域は多角形状であり、前記厚膜部は、前記共振領域の重心と、前記下部電極および前記上部電極が前記共振領域から引き出される引き出し領域が設けられた前記多角形状の辺の中心と、を結ぶ線分を含む帯状に設けられ、
前記薄膜部は、前記帯状の幅方向の前記厚膜部の両側の前記共振領域内に少なくとも設けられている請求項1記載の圧電薄膜共振器。 - 前記厚膜部は前記共振領域の重心を含む帯状に設けられ、
前記薄膜部は、前記帯状の幅方向の前記厚膜部の両側の前記共振領域内に少なくとも設けられている請求項1記載の圧電薄膜共振器。 - 前記厚膜部において前記空隙と前記下部電極との間に設けられ、前記薄膜部において設けられていない追加膜を具備する請求項1から6のいずれか一項記載の圧電薄膜共振器。
- 前記厚膜部における前記下部電極は前記薄膜部における前記下部電極より厚い請求項1から6のいずれか一項記載の圧電薄膜共振器。
- 前記下部電極と前記上部電極との間において、前記共振領域内の外周領域の少なくとも一部に設けられ、前記共振領域の中央領域には設けられていない挿入膜を具備する請求項1から8のいずれか一項記載の圧電薄膜共振器。
- 請求項1から9のいずれか一項記載の圧電薄膜共振器を含むフィルタ。
- 複数の前記圧電薄膜共振器を具備し、
前記複数の圧電薄膜共振器のうち隣接する圧電薄膜共振器において前記下部電極および前記厚膜部が連続する請求項10記載のフィルタ。 - 請求項10または11記載のフィルタを含むマルチプレクサ。
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JP2016099943A JP6757594B2 (ja) | 2016-05-18 | 2016-05-18 | 圧電薄膜共振器、フィルタおよびマルチプレクサ |
US15/434,975 US10270422B2 (en) | 2016-05-18 | 2017-02-16 | Piezoelectric thin film resonator, filter, and multiplexer |
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JP2016099943A JP6757594B2 (ja) | 2016-05-18 | 2016-05-18 | 圧電薄膜共振器、フィルタおよびマルチプレクサ |
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JP2017208711A JP2017208711A (ja) | 2017-11-24 |
JP2017208711A5 JP2017208711A5 (ja) | 2018-03-22 |
JP6757594B2 true JP6757594B2 (ja) | 2020-09-23 |
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JP7290941B2 (ja) * | 2018-12-27 | 2023-06-14 | 太陽誘電株式会社 | 弾性波デバイス、フィルタおよびマルチプレクサ |
US11387808B2 (en) * | 2018-12-28 | 2022-07-12 | Skyworks Global Pte. Ltd. | Bulk acoustic wave resonator with ceramic substrate |
WO2022080406A1 (ja) * | 2020-10-14 | 2022-04-21 | 株式会社村田製作所 | 弾性波装置 |
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---|---|---|---|---|
JP2000332573A (ja) * | 1999-05-25 | 2000-11-30 | Toyo Commun Equip Co Ltd | 圧電振動子 |
JP4128836B2 (ja) * | 2002-09-27 | 2008-07-30 | Tdk株式会社 | 薄膜圧電共振子、それを用いたフィルタ及びデュプレクサ |
JP2005151353A (ja) * | 2003-11-18 | 2005-06-09 | Matsushita Electric Ind Co Ltd | 薄膜弾性波共振器装置の製造方法、薄膜弾性波共振器装置、薄膜弾性波フィルタ、薄膜弾性波デバイスおよび共用器 |
JP4149416B2 (ja) | 2004-05-31 | 2008-09-10 | 富士通メディアデバイス株式会社 | 圧電薄膜共振子およびフィルタならびにそれらの製造方法 |
JP2007028594A (ja) * | 2005-06-17 | 2007-02-01 | Matsushita Electric Ind Co Ltd | 多重モード薄膜弾性波共振器フィルタ、並びにそれを備える、ラダー型フィルタ、共用器、及び通信機器 |
JP4838093B2 (ja) | 2006-10-25 | 2011-12-14 | 太陽誘電株式会社 | 圧電薄膜共振器およびフィルタ |
JP5279068B2 (ja) * | 2008-02-15 | 2013-09-04 | 太陽誘電株式会社 | 圧電薄膜共振子、フィルタ、通信モジュール、および通信装置 |
WO2009110062A1 (ja) * | 2008-03-04 | 2009-09-11 | 富士通株式会社 | 圧電薄膜共振器、フィルタ、通信モジュール、および通信装置 |
JP4944145B2 (ja) * | 2009-03-19 | 2012-05-30 | 太陽誘電株式会社 | 圧電薄膜共振子、フィルタ、通信モジュール、通信装置 |
JP5319491B2 (ja) * | 2009-10-22 | 2013-10-16 | 太陽誘電株式会社 | 圧電薄膜共振子 |
JP2012244616A (ja) * | 2011-05-24 | 2012-12-10 | Taiyo Yuden Co Ltd | 圧電薄膜共振子、フィルタおよびモジュール |
JP6336712B2 (ja) * | 2013-01-28 | 2018-06-06 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタおよびデュプレクサ |
-
2016
- 2016-05-18 JP JP2016099943A patent/JP6757594B2/ja active Active
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US10270422B2 (en) | 2019-04-23 |
JP2017208711A (ja) | 2017-11-24 |
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