JP4912604B2 - 窒化物半導体hemtおよびその製造方法。 - Google Patents
窒化物半導体hemtおよびその製造方法。 Download PDFInfo
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- JP4912604B2 JP4912604B2 JP2005096902A JP2005096902A JP4912604B2 JP 4912604 B2 JP4912604 B2 JP 4912604B2 JP 2005096902 A JP2005096902 A JP 2005096902A JP 2005096902 A JP2005096902 A JP 2005096902A JP 4912604 B2 JP4912604 B2 JP 4912604B2
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- 239000004065 semiconductor Substances 0.000 title claims description 115
- 150000004767 nitrides Chemical class 0.000 title claims description 34
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 62
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 53
- 229910052710 silicon Inorganic materials 0.000 claims description 53
- 239000010703 silicon Substances 0.000 claims description 53
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 39
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 39
- 229910052757 nitrogen Inorganic materials 0.000 claims description 31
- 229910002704 AlGaN Inorganic materials 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 22
- 239000007789 gas Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 14
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 7
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 121
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 50
- 229910002601 GaN Inorganic materials 0.000 description 48
- 239000002344 surface layer Substances 0.000 description 44
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 28
- 229910052760 oxygen Inorganic materials 0.000 description 28
- 239000001301 oxygen Substances 0.000 description 28
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 15
- 229910052782 aluminium Inorganic materials 0.000 description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 13
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 5
- 229910001195 gallium oxide Inorganic materials 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000010893 electron trap Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Formation Of Insulating Films (AREA)
- Electrodes Of Semiconductors (AREA)
Description
好ましい。
、2.0以下が好ましい。さらに、1.5〜2.0がより好ましい。
11 基板
12 半導体表面層
13 GaN系半導体層
14 ソース電極
16 ドレイン電極
18 ゲート電極
25 絶縁膜層
Claims (6)
- 基板上に順に形成されたGaN電子走行層、AlGaN電子供給層およびGaNキャップ層と、
前記GaNキャップ層上に形成されたゲート電極と、該ゲート電極を挟んで形成されたソース電極およびドレイン電極と、
前記ソース電極と前記ゲート電極との間および前記ゲート電極と前記ドレイン電極との間の前記GaNキャップ層の表面の全体に形成され、珪素の組成比が窒素に対し0.85〜1.12の窒化珪素からなる絶縁膜と、
を具備することを特徴とする窒化物半導体HEMT。 - 前記基板は、SiC、Si、サファイアおよびGaN系半導体のいずれかからなることを特徴とする請求項1載の窒化物半導体HEMT。
- 基板上にGaN電子走行層、AlGaN電子供給層およびGaNキャップ層を順に形成する工程と、
前記GaNキャップ層の表面にプラズマCVD法によって、珪素の組成比が窒素に対し0.85〜1.12の窒化珪素からなる絶縁膜を形成する工程と、
前記GaNキャップ層上にゲート電極を形成する工程と、
前記ゲート電極を挟んでソース電極およびドレイン電極を形成する工程と、を具備し、
前記絶縁膜は、前記ソース電極と前記ゲート電極との間および前記ゲート電極と前記ドレイン電極との間の前記GaNキャップ層の表面の全体に形成されることを特徴とする窒化物半導体HEMTの製造方法。 - 前記窒化珪素からなる絶縁膜は、SiH4ガスの流量が4〜15sccm、NH3ガスの流量が0〜8sccm、N2ガスの流量が20〜200sccmにより形成されることを特徴とする請求項3記載の窒化物半導体HEMTの製造方法。
- 前記絶縁膜は10nm以上で形成されることを特徴とする請求項3記載の窒化物半導体HEMTの製造方法。
- 前記GaN電子走行層、前記AlGaN電子供給層および前記GaNキャップ層は、MOCVD法で形成されることを特徴とする請求項3記載の窒化物半導体HEMTの製造方法。
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JP2005096902A JP4912604B2 (ja) | 2005-03-30 | 2005-03-30 | 窒化物半導体hemtおよびその製造方法。 |
US11/392,785 US8178900B2 (en) | 2005-03-30 | 2006-03-30 | Semiconductor device having GaN-based semiconductor layer and select composition ratio insulating film |
EP06251792.5A EP1708259B8 (en) | 2005-03-30 | 2006-03-30 | Semiconductor device having GaN-based semiconductor layer |
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JP2005096902A JP4912604B2 (ja) | 2005-03-30 | 2005-03-30 | 窒化物半導体hemtおよびその製造方法。 |
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JP2006278812A JP2006278812A (ja) | 2006-10-12 |
JP2006278812A5 JP2006278812A5 (ja) | 2008-04-24 |
JP4912604B2 true JP4912604B2 (ja) | 2012-04-11 |
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US (1) | US8178900B2 (ja) |
EP (1) | EP1708259B8 (ja) |
JP (1) | JP4912604B2 (ja) |
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JP4117535B2 (ja) | 2001-11-30 | 2008-07-16 | 信越半導体株式会社 | 化合物半導体素子 |
JP4385205B2 (ja) * | 2002-12-16 | 2009-12-16 | 日本電気株式会社 | 電界効果トランジスタ |
JP4385206B2 (ja) * | 2003-01-07 | 2009-12-16 | 日本電気株式会社 | 電界効果トランジスタ |
JP4179539B2 (ja) * | 2003-01-15 | 2008-11-12 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
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JP2005286135A (ja) * | 2004-03-30 | 2005-10-13 | Eudyna Devices Inc | 半導体装置および半導体装置の製造方法 |
-
2005
- 2005-03-30 JP JP2005096902A patent/JP4912604B2/ja active Active
-
2006
- 2006-03-30 EP EP06251792.5A patent/EP1708259B8/en active Active
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9893210B2 (en) | 2015-09-24 | 2018-02-13 | Mitsubishi Electric Corporation | Semiconductor device and method of manufacturing the same |
DE102016217862B4 (de) | 2015-09-24 | 2022-09-01 | Mitsubishi Electric Corporation | Halbleiteranordnung und Verfahren zum Herstellen einer Halbleiteranordnung |
JP7301465B2 (ja) | 2019-03-10 | 2023-07-03 | ジヤトコ株式会社 | 動力伝達装置 |
Also Published As
Publication number | Publication date |
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EP1708259B1 (en) | 2014-10-22 |
US8178900B2 (en) | 2012-05-15 |
US20060220063A1 (en) | 2006-10-05 |
EP1708259A2 (en) | 2006-10-04 |
EP1708259B8 (en) | 2015-01-07 |
EP1708259A3 (en) | 2008-05-28 |
JP2006278812A (ja) | 2006-10-12 |
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