JP4908940B2 - ナノ導電性膜のパターニング方法 - Google Patents
ナノ導電性膜のパターニング方法 Download PDFInfo
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- JP4908940B2 JP4908940B2 JP2006167517A JP2006167517A JP4908940B2 JP 4908940 B2 JP4908940 B2 JP 4908940B2 JP 2006167517 A JP2006167517 A JP 2006167517A JP 2006167517 A JP2006167517 A JP 2006167517A JP 4908940 B2 JP4908940 B2 JP 4908940B2
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- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/623—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing five rings, e.g. pentacene
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/788—Of specified organic or carbon-based composition
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
Description
Journal of American Chemical Society 2003,126,1596 Journal of American Chemical Society 2004,126,9486
ITOのナノ粉末(平均粒径10〜12nm)1gと、分散向上剤としてクロロホルム4gとを30分間撹拌して混合した後、ここに化学式3で表されるペンタセン誘導体1gと、混合溶媒としてトルエン4gとを入れて60分間よく撹拌し、均一なナノ導電性有機半導体混合物を製造した。
ポリエチレンテレフタレート(PET)のベースフィルム上に、接着アンカー層として4−クロロフェノールをスピンコーティングして均一に塗布した後、常温で1時間乾燥させた。乾燥させた接着アンカー層上に、スピンコーティング法を利用し、実施例1で製造したナノ伝導性有機半導体混合物を均一に塗布することにより、フィルムを製造した。このように製造したコーティングフィルムを100℃の温度で乾燥ボックス内で1時間乾燥させた。
実施例2のように製造したドナー基材をPET基材に密着させた後、SONY社の熱転写プリンタ(モデル名:SVM−75LS)を利用し所望のパターンに熱転写し、ペンタセン誘導体と、ITOのナノ粉末とが混合されたナノ導電性膜をPET基材に選択的に転写させた。この上に、正孔輸送層としてPEDOT/PSSを50nm厚さにコーティングした後、100℃で30分間乾燥した後、前記正孔輸送層の上部に青色発光物質であるスピロフロオレン系の発光高分子で100nm厚の発光層を形成した後、前記発光層の上部にLiFを3nm厚さに蒸着し、前記電子注入層の上部に第2電極としてAlを200nm厚にコーティングし、柔軟性のある有機発光ディスプレイを製作した。
200 ベース基材、
500 接着アンカー層、
510 プライマー層、
520 光熱変換層、
530 中間層、
540 離型層、
600 緩衝層、
700 耐熱潤滑層。
Claims (23)
- ベース基材と、ナノ導電性粒子及び下記化学式3〜化学式6:
- 前記ナノ導電性粒子が金属酸化物粒子、金属粒子、半導体粒子、またはそれらの混合物であることを特徴とする請求項1に記載のドナー基材。
- 前記金属酸化物粒子がITO、IZO、インジウム酸化物、スズ酸化物、亜鉛酸化物、チタン酸化物、セシウム酸化物、アンチモン酸化物、カドミウム酸化物またはそれらの混合物の粒子であることを特徴とする請求項2に記載のドナー基材。
- 前記金属粒子がAu、Ag、Cu、Pd、Pt、およびそれらの合金から選ばれる1種以上の粒子であることを特徴とする請求項2に記載のドナー基材。
- 前記半導体粒子が二族元素−六族元素、三族元素−五族元素、または六族元素からなるナノ結晶粒子であることを特徴とする請求項2に記載のドナー基材。
- 前記半導体粒子がCdS、CdSe、CdTe、ZnS、ZnSe、ZnTe、HgS、HgSe、HgTe、GaN、GaP、GaAs、InP、InAs、及びそれらの混合物からなる群から選択された一種以上の粒子であることを特徴とする請求項5に記載のドナー基材。
- 前記ナノ導電性粒子の平均粒径が2〜20nmであることを特徴とする請求項1〜6のいずれか1項に記載のドナー基材。
- 光熱変換層、接着アンカー層、プライマー層、耐熱潤滑層、中間層、離型層及び緩衝層のうち、少なくとも一層以上の層をさらに含むことを特徴とする請求項1〜7のいずれか1項に記載のドナー基材。
- (a)ナノ導電性粒子と有機半導体とを溶媒に添加し、有機半導体混合物を製造するステップと、
(b)前記有機半導体混合物をベース基材に塗布及び乾燥させて転写層を形成することにより、ドナー基材を得るステップと、
(c)前記ドナー基材をレセプタ基材上に密着するように配置し、前記ドナー基材にエネルギー源を照射し、前記レセプタ基材上に転写層を転写してパターニングされたナノ導電性膜を得るステップと、
を含むナノ導電性膜のパターニング方法。 - 前記ナノ導電性粒子が金属酸化物粒子、金属粒子、半導体粒子、またはそれらの混合物であることを特徴とする請求項9に記載のパターニング方法。
- 前記金属酸化物粒子がITO、IZO、インジウム酸化物、スズ酸化物、亜鉛酸化物、チタン酸化物、セシウム酸化物、アンチモン酸化物、カドミウム酸化物またはそれらの混合物の粒子であることを特徴とする請求項10に記載のパターニング方法。
- 前記金属粒子がAu、Ag、Cu、Pd、Pt、またはそれらの合金の粒子であることを特徴とする請求項10に記載のパターニング方法。
- 前記金属粒子の表面の金属元素が下記化学式1のような置換基で置換されたことを特徴とする請求項12に記載のパターニング方法:
- 前記半導体粒子が二族元素−六族元素、三族元素−五族元素、または六族元素からなるナノ結晶粒子であることを特徴とする請求項10に記載のパターニング方法。
- 前記半導体粒子がCdS、CdSe、CdTe、ZnS、ZnSe、ZnTe、HgS、HgSe、HgTe、GaN、GaP、GaAs、InP、InAs、及びそれらの混合物からなる群から選択された一種以上の粒子であることを特徴とする請求項14に記載のパターニング方法。
- 前記(b)ステップの前に、前記ベース基材上に光熱変換層を形成するステップ、接着アンカー層を形成するステップ、プライマー層を形成するステップ、耐熱潤滑層を形成するステップ、中間層を形成するステップ、離型層を形成するステップ、及び緩衝層を形成するステップのうち、一つ以上をさらに含むことを特徴とする請求項9〜15のいずれか1項に記載のパターニング方法。
- 前記ナノ導電性粒子の平均粒径が2〜20nmであることを特徴とする請求項9〜16のいずれか1項に記載のパターニング方法。
- 前記有機半導体がペンタセン誘導体;テトラセン誘導体;アントラセン誘導体;ナフタレン誘導体;オリゴチオフェン及びその誘導体;チエノフェン及びその誘導体;オリゴフェニレン及びその誘導体;チオフェニレンビニレン及びその誘導体;ペリレン及びその誘導体;ジオキシポリン及びその誘導体;ルブレン及びその誘導体;コロネン及びその誘導体;ペリレンテトラカルボン酸ジイミド及びその誘導体;ペリレンテトラカルボン酸二無水物及びその誘導体;金属含有もしくは非含有のフタロシアニン及びその誘導体;キノジメタン及びその誘導体;ピロメリット酸二無水物及びその誘導体;またはピロメリット酸ジイミド及びその誘導体;であることを特徴とする請求項9〜17のいずれか1項に記載のナノ導電性膜のパターニング方法。
- 前記有機半導体が下記化学式3〜化学式7の化合物から選択される一種以上であることを特徴とする請求項9〜18のいずれか1項に記載のパターニング方法:
- 前記溶媒が水、アセトン、メチルアルコール、エチルアルコール、イソプロピルアルコール、n−プロピルアルコール、ブチルアルコール、ジメチルアセトアミド、ジメチルイミダゾリン、ジメチルホルムアミド、テトラクロロエタン、ジメチルスルホキシド、N−メチル−2−ピロリドン、テトラヒドロフラン、テトラブチルアセテート、n−ブチルアセテート、m−クレゾール、トルエン、キシレン、エチレングリコール、γ−ブチロラクトンまたはヘキサフルオロイソプロパノールであることを特徴とする請求項9〜19のいずれか1項に記載のパターニング方法。
- ナノ導電性粒子と下記化学式3〜化学式6:
- 請求項21に記載のナノ導電性膜を有する平板表示装置。
- 有機発光表示素子であることを特徴とする請求項22に記載の平板表示装置。
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