JP2014517524A - ハイブリッド両極性tft - Google Patents
ハイブリッド両極性tft Download PDFInfo
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- JP2014517524A JP2014517524A JP2014513065A JP2014513065A JP2014517524A JP 2014517524 A JP2014517524 A JP 2014517524A JP 2014513065 A JP2014513065 A JP 2014513065A JP 2014513065 A JP2014513065 A JP 2014513065A JP 2014517524 A JP2014517524 A JP 2014517524A
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- 229910052707 ruthenium Inorganic materials 0.000 description 1
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- UWRZIZXBOLBCON-UHFFFAOYSA-N styrylamine group Chemical group C(=CC1=CC=CC=C1)N UWRZIZXBOLBCON-UHFFFAOYSA-N 0.000 description 1
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- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
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- 125000004001 thioalkyl group Chemical group 0.000 description 1
- IBBLKSWSCDAPIF-UHFFFAOYSA-N thiopyran Chemical compound S1C=CC=C=C1 IBBLKSWSCDAPIF-UHFFFAOYSA-N 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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- 150000003751 zinc Chemical class 0.000 description 1
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- SRWMQSFFRFWREA-UHFFFAOYSA-M zinc formate Chemical compound [Zn+2].[O-]C=O SRWMQSFFRFWREA-UHFFFAOYSA-M 0.000 description 1
- UGZADUVQMDAIAO-UHFFFAOYSA-L zinc hydroxide Chemical compound [OH-].[OH-].[Zn+2] UGZADUVQMDAIAO-UHFFFAOYSA-L 0.000 description 1
- 229940007718 zinc hydroxide Drugs 0.000 description 1
- 229910021511 zinc hydroxide Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- NHXVNEDMKGDNPR-UHFFFAOYSA-N zinc;pentane-2,4-dione Chemical compound [Zn+2].CC(=O)[CH-]C(C)=O.CC(=O)[CH-]C(C)=O NHXVNEDMKGDNPR-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
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- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
- H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions
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Abstract
Description
Adachiのグループは、インジウム酸化亜鉛/ペンタセンに基づく同様のハイブリッド両極性TFTを開示した。
(a)n型層(1、2)およびp型層(1、2)を含む半導体本体、ここで層(1)または(2)の一方はn型であり、他方のものはp型層であり、かつここで前記p型層は、少なくとも1種の有機正孔輸送材料(HTM)を含む;
(b)第1の電極(4);
(d)半導体本体と接触している第2の電極(3);および
(e)半導体本体と接触しているが第2の電極から分離されている、第3の電極(7)。
第1および第2の態様を特徴づける特徴が本発明の1つの電子デバイスにおいて組み合わせることも、本発明のさらなる態様である。
さらに、本発明のすべての好ましい態様は、他に述べない限り、第1および第2の態様またはそれらの組み合わせを指す。
好ましい態様において、ポリマー有機p型材料は、HTMを含む少なくとも1つの繰り返し単位および/または上に記載したHIM単位を含むが、またそれらの2つ、3つまたは4つ以上を含んでもよい。
A、BおよびB’は、互いに独立して、および複合回の出現の場合においては互いに独立して、好ましくは−CR1R2−、−NR1−、−PR1−、−O−、−S−、−SO−、−SO2−、−CO−、−CS−、−CSe−、−P(=O)R1−、−P(=S)R1−および−SiR1R2−から選択された2価の基であり、
R0およびR00は、互いに独立して、Hまたは、任意に1個もしくは2個以上のヘテロ原子を含む任意に置換されているカルビルもしくはヒドロカルビル基であり、
各々のgは、独立して0または1であり、同一の従属単位中の各々の対応するhは、0または1の他方であり、
Ar11およびAr12は、互いに独立して、任意に置換されており、任意にインデノフルオレン基の7,8位または8,9位に融合した単核または多核アリールまたはヘテロアリールであり、
aおよびbは、互いに独立して0または1である。
式(16)で表される単位において、基R1およびR2が、それらが付着したフルオレン基と共にスピロ基を形成する場合には、それは、好ましくはスピロビフルオレンである。
Lは、H、ハロゲン、または1〜12個のC原子を有する任意にフッ素化された直鎖状もしくは分枝状アルキルもしくはアルコキシから選択され、ならびに好ましくはH、F、メチル、i−プロピル、t−ブチル、n−ペントキシまたはトリフルオロメチルであり、ならびに
L’は、1〜12個のC原子を有する任意にフッ素化された直鎖状または分枝状アルキルまたはアルコキシル基であり、好ましくはn−オクチルまたはn−オクチルオキシである。
さらなる好ましい骨格単位は、例えばWO2003/099901A1に開示されているものである。
Yは、N、P、P=O、PF2、P=S、As、As=O、As=S、Sb、Sb=OまたはSb=S、好ましくはNであり、
Ar1、それは同一であっても異なっていてもよく、独立して異なる繰り返し単位における場合には、単結合または任意に置換された単核もしくは多核アリール基を示し、
Ar3、それは同一であっても異なっていてもよく、独立して異なる繰り返し単位における場合には、任意に置換された単核または多核アリール基を示し、
mは、1、2または3である。
各出現において同一であっても異なっていてもよいRは、H、置換または非置換の芳香族または複素芳香族基、アルキル、シクロアルキル、アルコキシ、アラルキル、アリールオキシ、アリールチオ、アルコキシカルボニル、シリル、カルボキシ基、ハロゲン原子、シアノ基、ニトロ基またはヒドロキシ基から選択され、
rは、0、1、2、3または4であり、ならびに
sは、0、1、2、3、4または5である。
−(T1)c−(Ar4)d−(T2)e−(Ar5)f−
式(20)
式中、
T1およびT2は、互いに独立して、チオフェン、セレノフェン、チエノ[2,3b]チオフェン、チエノ[3,2b]チオフェン、ジチエノチオフェン、ピロール、アニリンから選択され、それらのすべては、任意にR5で置き換えられており、
cおよびeは、互いに独立して0、1、2、3または4であり、1<c+e≦6であり、
dおよびfは、互いに独立して0、1、2、3または4である。
本発明のコポリマーは、統計、ランダム、交互、レジオレギュラーもしくはブロックコポリマーまたはそれらのあらゆる組み合わせであってもよい。それは、2個、3個または4個以上の別個のモノマー単位を含んでもよい。
好ましい態様において、例えば式(16)による骨格繰り返し単位のコポリマー中の含量は、好ましくは、5mol%より大きく100mol%より小さく、特に好ましくは20〜80mol%の範囲内であり、極めて特に好ましくは40〜60mol%である。
Aは、例えば式(16)で表される上に定義した骨格単位であり、
Bは、例えば上に定義した式(19)または(20)で表されるHTM単位であり、
xは、0.05より大きく1より小さく、
yは、0より大きく0.95より小さく、
x+yは、1であり、
nは、1より大きい整数である。
p型層の厚さは、好ましくは1〜1000nmの範囲内、より好ましくは2〜500nmの範囲内、最も好ましくは10〜200nmの範囲内である。
本発明の電子デバイスにおいて、n型層は、無機または有機n型材料を含んでもよい。
WO2010/078907には、様々な金属酸化物のための前駆体が開示されており、ここで金属は、Zn、Ag、Pd、Rh、Cu、Pt、Ni、Fe、Ru、Os、Mn、Cr、Mo、Au、W、Co、IrおよびCdを含む。
数種の前駆体化合物、例えばZn(C2H3O2)2(Aldrich)およびTiO2についての前駆体(Dupont tyzol BTP)は、商業的に入手できる。
好ましいEIMは、8 ヒドロキシキノリンの金属錯体、例えばAlQ3およびGaQ3である。
一般的に、プロセスは、以下のステップを順に含む、
1)n型層((1)または(2))の堆積。
2)任意に絶縁層B(8)のn型層((1)、(2))上への堆積
3)有機p型層((2)または(1))の絶縁層B(8)上への堆積。
1−1)溶液を基板にコーティングすること。ここで溶液は、n型無機半導体材料の前駆体化合物を含んで、前駆体層を形成する。
1−2)前駆体層を無機n型層に、加熱することにより、および/またはUV光を適用することにより変換すること。
本発明は、したがってさらに、本発明の電子デバイスを含む電子設備に関する。
本発明の他の特徴は、本発明の例示のために示し、それについて限定することを意図しない、例示的な態様および図面の以下の記載の途上で明らかになるであろう。
例1
材料およびそれらの合成
以下のp型ポリマーを、鈴木カップリングを使用することにより合成する。当該反応を、当業者に周知の合成方法に従って行うことができる。当該方法は、例えばWO2003/048225に記載されている。
SHT−263は、Merck KGaAによる小分子p型材料であり、共通の有機溶媒、例えばトルエン、クロロベンゼンに可溶である。
量子化学計算
光電子デバイスにおいて使用するための材料を設計するために、エネルギー準位、特に最高被占分子軌道(HOMO)および最低空分子軌道(LUMO)準位の予測は、不可欠である。
HOMO(eV)=((HEh*27.212)−0.9899)/1.1206
LUMO(eV)=((LEh*27.212)−2.0041)/1.385
表1に示したように、これらの材料のすべては高いLUMOを有し、したがって本発明のデバイスにおいて使用することができる。
ZnOは、Adv.Funct.Mater. 2008, 18, 1832-1839に報告されているように、−4.4eVのLUMOおよび−7.7eVのHOMOを有する。
デバイス調製および特徴づけ
両極性TFTを、2段階において調製することができる:
最初に、ZnO TFTを、以下のように調製する:0.06gの2−(メトキシイミノ)プロパノアト]亜鉛二水和物および1.94gの2−メトキシエタノールからの3wt%溶液75μlを、Si/SiO2/Au基板にてスピンコートし(2000rpm、30秒)、続いて空気中での5分間のHoenle FeでドープしたUVランプ(500mW/cm2)照射および325℃でのアルゴングローブボックス(H2O<0.5ppm、O2<0.5ppm)中での1分間のホットプレート処理を施す。ZnOフィルムの厚さは、典型的には20〜50nmである。
二重層ZnO/P1およびZnO/SHT263を共に有する両極性FETは、明瞭な両極性挙動を示す。ZnO/P1の二重層からなる両極性電界効果トランジスタの典型的な出力特性を、図5に示す。
Claims (16)
- 基板(5)上に配置された以下のもの:
(a)n型またはp型層のいずれかである層(1)およびn型またはp型層のいずれかである層(2)を含み、ここで層(1)および(2)の両方の一方がn型であり、他方のものがp型層であり、ここでp型層((1)または(2))が少なくとも1種の有機正孔輸送材料(HTM)を含む、半導体本体;ならびに
(b)第1の電極(4);ならびに
(c)半導体本体と第1の電極との間に配置された絶縁層A(6);
(d)半導体本体と接触している第2の電極(3);ならびに
(e)半導体本体と接触しているが、第2の電極から分離された、第3の電極(7);
を含む電子デバイスであって、
(1)n型層が無機n型半導体材料を含み、前記少なくとも1種の有機正孔輸送材料が、−2.7eVより高いエネルギー準位で最低空分子軌道(LUMO)を有し;かつ/または
(2)半導体本体が、n型層とp型層との間に配置された絶縁層B(8)をさらに含む
ことを特徴とする、前記電子デバイス。 - 有機p型層および/または有機n型層が溶液からコーティングされることを特徴とする、請求項1に記載の電子デバイス。
- n型層が無機n型半導体材料を含むことを特徴とする、請求項1または2に記載の電子デバイス。
- 無機n型半導体材料が金属酸化物、IV族、III−V族、IV−VI族およびII−VI族半導体から選択されることを特徴とする、請求項3に記載の電子デバイス。
- 無機n型半導体材料が金属酸化物であり、それがZnO、In2O3、SnO2、TiO2、Ga2O3、MoO3および合金、またはそれらの混合物から選択されることを特徴とする、請求項3または4に記載の電子デバイス。
- 無機n型層が、金属酸化物の前駆体化合物を基板上にコーティングし、前駆体を加熱して、金属酸化物のフィルムを基板上に得ることにより形成されることを特徴とする、請求項3〜5のいずれか一項に記載の電子デバイス。
- n型層の厚さが1〜200nmの範囲内にあることを特徴とする、請求項1〜6のいずれか一項に記載の電子デバイス。
- 有機p型材料がアミン、トリアリールアミン、チオフェン、カルバゾール、インデノカルバゾール、インドロカルバゾール、フタロシアニン、ポルフィリンおよびそれらの誘導体から選択された基を含むことを特徴とする、請求項1〜7のいずれか一項に記載の電子デバイス。
- 絶縁層B(8)が1.0〜5.0の範囲内の誘電定数を有する材料を含むことを特徴とする、請求項1〜8のいずれか一項に記載の電子デバイス。
- 絶縁層B(8)がフルオロポリマー、パーフルオロポリマーおよび/または金属酸化物を含むことを特徴とする、請求項1〜9のいずれか一項に記載の電子デバイス。
- 金属酸化物がSiOx、SiNx、AlOx、ZrOx、HfOx、TiOxからなる群から選択され、ここでxが1〜4の整数であることを特徴とする、請求項10に記載の電子デバイス。
- 絶縁層B(8)の厚さが1nm〜1μmの範囲内にあることを特徴とする、請求項1〜11のいずれか一項に記載の電子デバイス。
- 請求項1〜12のいずれか一項に記載の電子デバイスの製造方法であって、有機p型材料を溶液からコーティングして有機p型層を形成することを特徴とする、前記方法。
- 請求項1〜12のいずれか一項に記載の電子デバイスの製造方法であって、無機n型層を溶液からコーティングすることを特徴としし、それが以下のステップ:
1)前駆体層を形成するためのn型無機半導体材料の前駆体化合物を含む溶液を、基板にコーティングすること;
2)前駆体層を無機n型層に、加熱により、および/またはUV光を適用することにより移行させること
を所与の順序において含むことを特徴とする、前記方法。 - 請求項1〜12のいずれか一項に記載の電子デバイスの、RFIDおよびディスプレイのためのバックプレーンから選択された電子設備における使用。
- 請求項1〜12のいずれか一項に記載の電子デバイスを含む、電子設備。
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Also Published As
Publication number | Publication date |
---|---|
CN103563113A (zh) | 2014-02-05 |
WO2012163464A1 (en) | 2012-12-06 |
EP2715821A1 (en) | 2014-04-09 |
US20140091300A1 (en) | 2014-04-03 |
TW201304137A (zh) | 2013-01-16 |
US9190622B2 (en) | 2015-11-17 |
KR20140036279A (ko) | 2014-03-25 |
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